Renesas IDT71256L25YI8

Overview

IDT71256L25YI8 from Integrated Device Technology is a 256K (32K × 8-bit) high-speed CMOS static RAM with 25 ns maximum access time, 5 V ±10% supply, and industrial temperature range (–40°C to +85°C). It features TTL-compatible I/O, battery-backed data retention down to 2 V, and full standby current under 3 µA. Used in embedded controllers and legacy industrial systems requiring nonvolatile SRAM backup.

For engineers reviewing the IDT71256L25YI8 datasheet, IDT71256L25YI8 pinout, IDT71256L25YI8 application, or IDT71256L25YI8 equivalent, key selection criteria include its 25 ns access timing, low-power standby mode (<3 µA), 2 V data retention capability, SOJ-28 package, and MIL-STD-883-compliant industrial-grade reliability.

Technical Context

The IDT71256L25YI8 implements a fully decoded 15-bit address interface (A0–A14) driving a 32K × 8-bit memory array using high-reliability CMOS technology. Its control logic supports independent chip select (CS), output enable (OE), and write enable (WE) with three distinct operational states: active read/write, TTL-level standby (ISB), and CMOS-level full standby (ISB1).

It operates exclusively at 5 V ±10%, with input thresholds VIH ≥ 2.2 V and VIL ≤ 0.8 V, and guarantees data retention at VCC = 2.0 V across –40°C to +85°C. The device uses standard asynchronous SRAM timing with no internal refresh, clock, or bus arbitration logic.

Key Specifications

Pinout & Package

Package: 28-pin SOJ (Small Outline J-Lead), 300 mil width, RoHS-compliant lead finish per ordering code YI8.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Compared with CY62256LN-25ZSXIT and AS6C4008-25ZIN, the IDT71256L25YI8 uniquely delivers MIL-STD-883 Class B qualification, verified 2 V data retention, and <3 µA full-standby current - making it irreplaceable in safety-critical industrial and avionics designs where data integrity during extended power loss is mandatory.

Availability

IDT71256L25YI8 is available at Aetrix Electronics and suitable for industrial PLCs, avionics data loggers, medical diagnostic equipment, and legacy telecom line cards requiring stable component supply over extended production lifecycles.

Supply support for IDT71256L25YI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas Electronics in 2019.

The IDT71256L25YI8 belongs to IDT's legacy high-reliability SRAM product line, designed specifically for industrial and aerospace applications demanding guaranteed data retention, wide temperature operation, and long-term supply stability.

FAQ

What is the operating voltage range for IDT71256L25YI8?

IDT71256L25YI8 operates strictly at 5.0 V ±10%, meaning 4.5 V to 5.5 V. It does not support 3.3 V or dual-voltage operation. The 2 V specification applies only to data retention mode during power loss - not functional operation. This voltage constraint must be enforced by the host system's power regulation circuitry to ensure reliable read/write timing and avoid parametric failure.

Does IDT71256L25YI8 support true battery backup operation?

Yes, IDT71256L25YI8 supports verified battery backup with data retention down to 2.0 V across its full industrial temperature range (–40°C to +85°C). In this mode, CS must remain HIGH while VCC drops to 2 V, drawing ≤800 µA typical. The device retains all 262,144 bits without refresh, making it suitable for applications like power-loss logging in programmable logic controllers where data integrity is mission-critical.

What package type is used for IDT71256L25YI8?

IDT71256L25YI8 uses a 28-pin Small Outline J-Lead (SOJ) package, 300 mil width, with lead finish compliant with RoHS Directive 2011/65/EU. The "YI8" suffix in the part number explicitly denotes this SOJ-28 industrial-grade variant. It is not available in DIP, LCC, or TSOP packages - only SOJ-28 for this speed/temp grade.

How does the standby current of IDT71256L25YI8 compare to standard SRAMs?

IDT71256L25YI8 achieves ≤3 µA full standby current (ISB1) when CS is held above VHC (VCC – 0.2 V) and no address transitions occur. This is up to 10× lower than typical commercial SRAMs of similar density and speed. That ultra-low ISB1 enables multi-year battery backup life in remote sensors and medical devices - a key differentiator confirmed in IDT's DC Electrical Characteristics Table 7.

Is IDT71256L25YI8 pin-compatible with other 28-pin SRAMs?

IDT71256L25YI8 follows industry-standard 28-pin SOJ pinout for 32K × 8 SRAMs: A0–A14, I/O0–I/O7, CS, WE, OE, VCC, GND. It matches the JEDEC MS-012AC footprint and signal assignment. However, pin compatibility alone does not guarantee functional drop-in replacement - verify timing (especially tCHZ, tOHZ), voltage tolerance, and data retention behavior against the incumbent device before substitution.