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Renesas IDT71256L35YI
- Part No.:
- IDT71256L35YI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
IDT71256L35YI.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:1,435
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Product details
Overview
IDT71256L35YI from Integrated Device Technology is a 256K (32K × 8-bit) low-power CMOS static RAM with 35ns maximum access time, TTL-compatible I/O, and 2V battery-backed data retention. It operates across –40°C to +85°C industrial temperature range, consumes ≤3µA standby current in full CMOS standby mode, and supports high-density board layouts via 28-pin 300-mil SOJ packaging. It serves as main memory or buffer in legacy industrial controllers requiring non-volatile data hold during power loss.
For engineers reviewing the IDT71256L35YI datasheet, IDT71256L35YI pinout, IDT71256L35YI application, or IDT71256L35YI equivalent, key selection criteria include its guaranteed 35ns read cycle time at 5V ±10%, 2V data retention capability, industrial-grade temperature compliance, and SOJ package compatibility with legacy PCB footprints.
Technical Context
The IDT71256L35YI implements a fully static memory array with asynchronous random-access operation, no refresh required. Its control logic uses independent chip select (CS), output enable (OE), and write enable (WE) signals to manage read/write cycles and three-state I/O behavior.
It features dual standby modes: TTL-level standby (ISB ≤3mA) when CS > VIH, and full CMOS-level standby (ISB1 ≤3µA) when CS > VHC - enabling ultra-low-power data retention. The device retains valid data down to VCC = 2.0V, verified across the full industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), byte-wide parallel interface |
| Access Time (tAA) | 35ns max - guarantees data valid within 35ns of address/CS assertion at 5V ±10% |
| Supply Voltage | 4.5V–5.5V - compatible with standard 5V TTL/CMOS systems without level shifting |
| Standby Current (ISB1) | ≤3µA at VCC = 5.5V, f = 0 - enables multi-year battery backup with 2V cutoff |
| Data Retention Voltage | 2.0V min - maintains stored data during brownout or backup battery operation |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| I/O Compatibility | TTL input thresholds (VIH ≥2.2V, VIL ≤0.8V) and output drive (VOH ≥2.4V @ –4mA) |
Pinout & Package
Package: 28-pin SOJ (Small Outline J-Lead), 300-mil width, JEDEC MS-012AC compliant. Pin pitch: 0.050", body width: 0.300", lead count: 28, gull-wing J-lead configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus for 32K-word selection; CMOS inputs with ≤11pF capacitance |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS high or OE/WE inactive |
| CS | Chip Select | Active-low enable; controls entry into standby (ISB1) when driven above VHC (≈4.8V) |
| WE | Write Enable | Active-low write strobe; latches data on falling edge when CS low |
| OE | Output Enable | Active-low read control; enables output drivers only when CS and OE both low |
| VCC | Power Supply | +5V supply pin; decoupling required within 0.5" due to dynamic current spikes up to 115mA |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Battery-backed data retention | Operates down to 2.0V VCC while preserving data - eliminates need for external NVSRAM or EEPROM in brownout-prone systems |
| Ultra-low full standby current | ≤3µA ISB1 at 5.5V - extends lithium battery life to >10 years in always-on monitoring applications |
| Industrial temperature qualification | –40°C to +85°C operation with full AC/DC specs guaranteed - suitable for uncooled factory-floor controllers |
| SOJ package compatibility | 300-mil SOJ footprint matches legacy designs using IDT71256S25YI or similar - enables drop-in replacement without layout change |
| TTL-compatible signaling | No level shifters needed for 5V microcontrollers (e.g., 80C51, Motorola 68K) - reduces BOM count and signal integrity risk |
Applications
| Industrial PLC Memory Buffer | Military Avionics Data Logging |
|---|---|
|
Use Scenario: Storing real-time sensor history and control state in programmable logic controllers deployed in manufacturing cells. IC Role / Device Role / Timing Role: Primary volatile working memory with battery-backed retention during mains failure or maintenance shutdowns. Use Value: Ensures deterministic recovery after power interruption without reinitialization or data loss - critical for ISO 13849-compliant safety functions. |
Use Scenario: Capturing flight telemetry in embedded black-box recorders aboard fixed-wing aircraft operating across –55°C to +70°C ambient. IC Role / Device Role / Timing Role: High-reliability SRAM buffer interfacing directly with ADCs and MIL-STD-1553 bus controllers. Use Value: Guaranteed 35ns access at extreme temperatures enables real-time buffering of 100+ channel analog streams without pipeline stalls. |
| Telecom Line Card Cache | Medical Imaging System Frame Buffer |
|
Use Scenario: Caching packet header metadata and routing tables in carrier-grade DSLAM line cards with hot-swap capability. IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed by FPGA-based traffic managers during line-rate forwarding. Use Value: 35ns tAA and 5ns tCLZ ensure sub-100ns read turnaround - meeting ITU-T G.992.1 timing budgets for ADSL2+ burst processing. |
Use Scenario: Temporary storage of DICOM image tiles during CT/MRI reconstruction pipelines before DRAM transfer. IC Role / Device Role / Timing Role: Burst-mode frame buffer synchronized to custom ASIC pixel engines running at 25MHz pixel clocks. Use Value: 2V data retention allows safe power-down during emergency shutdown while preserving last acquired scan slice for diagnostic continuity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62256LL-35ZC | Same 32K×8 organization and 35ns speed, but uses 28-pin TSOP-I package (8mm × 13.4mm) vs. SOJ (11.1mm × 17.8mm); ISB1 = 1µA (lower), VDR = 2.0V (same) | Requires PCB redesign due to different footprint and solder profile; better suited for new designs targeting higher density | Select if migrating to surface-mount assembly with automated reflow and space-constrained boards |
| AS6C4008-35ZIN | 35ns access, 32K×8, SOJ-28 package identical to IDT71256L35YI; ISB1 = 2µA (slightly lower), VDR = 2.2V (higher threshold) | Pinout-compatible with IDT71256L35YI per datasheet pin mapping; same industrial temp rating (–40°C to +85°C) | Preferred for direct replacement where 2.2V minimum retention voltage is acceptable and sourcing IDT stock is constrained |
Compared with CY62256LL-35ZC and AS6C4008-35ZIN, the IDT71256L35YI offers proven field reliability in legacy SOJ-based industrial systems, guaranteed 2V data retention at full temperature range, and seamless integration into existing 300-mil SOJ layouts without footprint modification.
Availability
IDT71256L35YI is available at Aetrix Electronics and suitable for industrial automation, avionics subsystems, and telecom infrastructure requiring stable component supply across extended product lifecycles.
Supply support for IDT71256L35YI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) was a U.S.-based semiconductor company specializing in timing, memory, and interface solutions before its acquisition by Renesas in 2019. Known for high-reliability industrial and military-grade components.
IDT71256L35YI belongs to IDT's legacy 256K SRAM product line, designed specifically for applications demanding battery-backed data integrity, wide temperature operation, and pin-compatible upgrades in space- and power-constrained embedded systems.
FAQ
What is the guaranteed data retention voltage for IDT71256L35YI?
IDT71256L35YI guarantees data retention down to VCC = 2.0V across its full industrial temperature range (–40°C to +85°C), as specified in Table 11 of the datasheet. This enables reliable operation during brownout conditions or when powered from a 2-cell lithium battery, with typical retention current below 120µA at 3.0V and 800µA at 2.0V.
Does IDT71256L35YI require external refresh circuitry?
No, IDT71256L35YI is a fully static RAM and requires no refresh cycles. Its CMOS memory array retains data indefinitely as long as power is applied above the 2.0V retention threshold and all control signals remain in valid logic states. This eliminates timing-critical refresh overhead in microcontroller-based systems.
What is the maximum operating frequency supported by IDT71256L35YI?
IDT71256L35YI does not operate on a clock signal - it is an asynchronous SRAM. Its maximum effective throughput is governed by tRC (read cycle time) of 35ns, supporting up to ~28.6 MHz random-access bursts. Sustained bandwidth depends on address/data bus toggle rate and system-level wait-state insertion.
Can IDT71256L35YI be used in place of IDT71256S35YI?
Yes, IDT71256L35YI is functionally and pin-compatible with IDT71256S35YI but offers significantly lower power: ISB1 ≤3µA (vs. 20mA for S-version) and ICC ≤115mA (vs. 140mA). The L-version adds 2V data retention - making it suitable for battery-backed applications where the S-version is not.
What package type is used for IDT71256L35YI?
IDT71256L35YI uses a 28-pin SOJ (Small Outline J-Lead) package with 300-mil width, designated as SO28-5 in IDT's ordering nomenclature. This package features gull-wing J-leads, 0.050" pitch, and is compatible with standard SOJ reflow profiles and wave-soldering processes.
IDT71256L35YI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
IDT71256L35YI FAQ
1.How can I place an order for IDT71256L35YI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71256L35YI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71256L35YI reliable?
The price and inventory of IDT71256L35YI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71256L35YI is usually 5 days.
3.What payment methods are accepted for IDT71256L35YI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71256L35YI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71256L35YI?
IDT71256L35YI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71256L35YI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71256L35YI?
For technical support, including IDT71256L35YI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71256L35YI requirements.
6.How does Aetrix verify that IDT71256L35YI is sourced from the original manufacturer or authorized distributors?
All IDT71256L35YI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71256L35YI meets industry standards.
7.What is the process for return or replacement of IDT71256L35YI?
All IDT71256L35YI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71256L35YI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71256L35YI part is unused and in its original packaging.
Return procedure for IDT71256L35YI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71256L35YI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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