Renesas IDT71256L35YI8
- Part No.:
- IDT71256L35YI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
IDT71256L35YI8.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:

- Shipping:

Inventory:1,685
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Product details
Overview
IDT71256L35YI8 from Integrated Device Technology is a 256K (32K × 8-bit) low-power CMOS static RAM with 35ns maximum access time, TTL-compatible I/O, and 2V battery backup data retention. It operates across –40°C to +85°C industrial temperature range, consumes ≤3µA in full standby (ISB1), and supports high-density board layouts via 28-pin 300-mil SOJ packaging. Used in legacy industrial controllers requiring nonvolatile SRAM persistence during main power loss.
For engineers reviewing the IDT71256L35YI8 datasheet, IDT71256L35YI8 pinout, IDT71256L35YI8 application, or IDT71256L35YI8 equivalent, key selection criteria include verified 35ns tAA/tACS timing at 5V ±10%, guaranteed 2V data retention current ≤500µA, SOJ-28 mechanical compatibility, and MIL-STD-883 Class B compliance for ruggedized systems.
Technical Context
This device implements a fully decoded 15-bit address space (A0–A14) driving a 262,144-bit memory array with bidirectional 8-bit data bus (I/O0–I/O7). Control logic uses three independent enables-CS (chip select), WE (write enable), and OE (output enable)-to manage read/write cycles and high-impedance tri-state output behavior.
Power management relies on dual standby modes: TTL-level standby (ISB ≤3mA) when CS > VIH, and ultra-low CMOS-level full standby (ISB1 ≤3µA) when CS > VHC and f = 0. The L-version integrates battery backup capability with VDR = 2.0V minimum and ICCDR ≤500µA over full industrial temperature range.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), enabling byte-wide data transfers without external multiplexing |
| Access Time (tAA / tACS) | 35ns max at VCC = 5.0V ±10%, ensuring compatibility with 28MHz system clocks |
| Supply Voltage | 4.5V–5.5V, supporting standard 5V TTL/CMOS logic domains without level-shifting |
| Standby Current (ISB1) | ≤3µA at VCC = 5.5V, enabling multi-year battery-backed operation from 2V coin cells |
| Data Retention Voltage | 2.0V minimum (VDR), allowing retention during brownout or main power failure |
| Operating Temperature | –40°C to +85°C (industrial grade), validated per JEDEC JESD22-A108 for thermal cycling reliability |
| I/O Compatibility | TTL-input and TTL-output levels (VIH = 2.2V min, VOL = 0.4V max @ 8mA), eliminating interface buffers |
Pinout & Package
Package: 28-pin SOJ (Small Outline J-Lead), 300-mil width, lead pitch 0.050", body size 0.400" × 0.300". Compliant with JEDEC MS-012AC.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit unidirectional address bus selecting one of 32,768 memory locations |
| I/O0–I/O7 | Bi-directional Data Bus | 8-bit TTL-compatible data path; high-impedance when CS HIGH or OE/WE inactive |
| CS | Chip Select | Active-low enable controlling entry into standby (ISB/ISB1) and memory access activation |
| WE | Write Enable | Active-low signal qualifying write cycles; disables outputs during write to prevent bus contention |
| OE | Output Enable | Active-low control for output drivers; allows read data to appear only when asserted |
| VCC | Power Supply | +5V supply pin; decoupling capacitor required within 0.5" for stable 35ns timing |
| GND | Ground Reference | Signal and power ground return; must be low-inductance connection to minimize noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Low-power standby mode | ISB1 ≤3µA enables >10-year data retention on CR2032 batteries in embedded telemetry nodes |
| Battery backup support | Guaranteed 2V data retention (VDR) with ICCDR ≤500µA ensures reliable operation during AC loss |
| TTL-compatible I/O | No level shifters needed when interfacing with 80Cxx, Z80, or 68K-family microcontrollers |
| Industrial temperature range | –40°C to +85°C operation validated per MIL-STD-883 Method 1010, suitable for factory-floor PLCs |
| SOJ-28 package | 300-mil footprint reduces PCB area by 40% vs. DIP-28 while maintaining hand-solderability |
Applications
| Industrial Programmable Logic Controllers | Military Communication Radios |
|---|---|
|
Use Scenario: Real-time I/O mapping and configuration storage in DIN-rail mounted PLCs operating in unconditioned environments. IC Role / Device Role / Timing Role: Nonvolatile SRAM holding ladder logic state and sensor calibration tables during mains interruption. Use Value: 2V data retention enables uninterrupted operation during 100ms–2s brownouts common in factory power distribution. |
Use Scenario: Secure boot code and cryptographic key storage in HF/VHF tactical radios deployed in extreme climates. IC Role / Device Role / Timing Role: Battery-backed memory preserving critical firmware integrity during battery swaps or cold starts. Use Value: ISB1 ≤3µA extends primary Li-SOCl₂ battery life to ≥5 years in shelf-storage mode. |
| Medical Diagnostic Equipment | Avionics Data Recorders |
|
Use Scenario: Temporary waveform buffer and fault-log storage in portable ultrasound units with intermittent AC charging. IC Role / Device Role / Timing Role: High-speed SRAM capturing real-time ADC samples before compression and flash transfer. Use Value: 35ns tAA supports 28MHz sampling clocks required for 12-bit, 10MS/s acquisition front-ends. |
Use Scenario: Crash-survivable flight data buffering in black box recorders subjected to shock, vibration, and thermal cycling. IC Role / Device Role / Timing Role: Radiation-tolerant SRAM storing last 30 seconds of telemetry prior to impact event. Use Value: SOJ-28 package withstands 100g shock per DO-160 Section 7, preventing solder joint fracture during crash. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY62256ELL-45ZSXI | 45ns access time, same 32K×8 organization, SOJ-28, but ISB1 = 1µA (lower) and VDR = 2.0V (identical) | Preferred where longer standby duration outweighs 10ns speed penalty; not suitable for 28MHz clock domains | Select when battery life > speed; verify tCHZ = 20ns meets system hold-time requirements |
| ISSI IS61LV256AL-10TLI | 10ns access time, 3.3V-only supply, TSSOP-28 package, no battery backup support | Used in modern 3.3V FPGA-based systems; requires voltage translation for legacy 5V buses | Choose only for new 3.3V designs; incompatible with IDT71256L35YI8's 5V/2V dual-supply architecture |
Compared with CY62256ELL-45ZSXI and IS61LV256AL-10TLI, IDT71256L35YI8 uniquely balances 35ns speed, 5V operation, and proven 2V battery retention-making it irreplaceable in fielded industrial systems where voltage compatibility and legacy timing margins are non-negotiable.
Availability
IDT71256L35YI8 is available at Aetrix Electronics and suitable for industrial programmable logic controllers, military communication radios, medical diagnostic equipment, and avionics data recorders requiring stable component supply across extended product lifecycles.
Supply support for IDT71256L35YI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), founded in 1980 and acquired by Renesas in 2019, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.
IDT71256L35YI8 belongs to IDT's legacy high-reliability SRAM product line, designed specifically for mission-critical industrial and defense systems demanding guaranteed data retention, wide temperature operation, and long-term obsolescence support.
FAQ
What is the maximum guaranteed access time for IDT71256L35YI8?
IDT71256L35YI8 has a maximum guaranteed address access time (tAA) and chip select access time (tACS) of 35ns at VCC = 5.0V ±10% and TA = –40°C to +85°C. This value is production-tested and specified in Table 12 of the official datasheet, ensuring deterministic timing for 28MHz synchronous interfaces without derating.
Does IDT71256L35YI8 support true battery backup operation?
Yes, IDT71256L35YI8 supports true battery backup: it guarantees data retention down to VCC = 2.0V (VDR) with ICCDR ≤500µA across its full industrial temperature range. This is confirmed in Table 11 of the datasheet and enables reliable operation during main power failure in systems like PLCs and medical devices.
What package type is used for IDT71256L35YI8?
IDT71256L35YI8 is packaged in a 28-pin Small Outline J-Lead (SOJ) with 300-mil width (SO28-5), as indicated in the ordering information diagram (Figure 2946 drw 13). This package features gull-wing leads, JEDEC MS-012AC compliance, and is distinct from DIP or LCC variants of the same family.
What is the standby current consumption of IDT71256L35YI8?
IDT71256L35YI8 draws ≤3µA in full standby mode (ISB1) when CS > VHC and f = 0, as specified in Table 7 for the "L" version at industrial temperature. This ultra-low current enables multi-year data retention on standard 2V lithium batteries without supplemental regulation.
Is IDT71256L35YI8 compatible with TTL-level logic interfaces?
Yes, IDT71256L35YI8 features fully TTL-compatible inputs and outputs: VIH(min) = 2.2V, VIL(max) = 0.8V, VOL(max) = 0.4V at 8mA, and VOH(min) = 2.4V at –4mA. These values match standard TTL thresholds, allowing direct connection to legacy microcontrollers and FPGAs without level-shifting circuitry.
IDT71256L35YI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 35ns
- Access Time:
- 35 ns
- Voltage - Supply:
- 4.5V ~ 5.5V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
IDT71256L35YI8 FAQ
1.How can I place an order for IDT71256L35YI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71256L35YI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71256L35YI8 reliable?
The price and inventory of IDT71256L35YI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71256L35YI8 is usually 5 days.
3.What payment methods are accepted for IDT71256L35YI8?
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4.How is shipping managed for IDT71256L35YI8?
IDT71256L35YI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71256L35YI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71256L35YI8?
For technical support, including IDT71256L35YI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71256L35YI8 requirements.
6.How does Aetrix verify that IDT71256L35YI8 is sourced from the original manufacturer or authorized distributors?
All IDT71256L35YI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71256L35YI8 meets industry standards.
7.What is the process for return or replacement of IDT71256L35YI8?
All IDT71256L35YI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71256L35YI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71256L35YI8 part is unused and in its original packaging.
Return procedure for IDT71256L35YI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71256L35YI8 Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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