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Renesas IDT71P71604S167BQ

Part No.:
IDT71P71604S167BQ
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
AetrixIDT71P71604S167BQ.pdf
Description:
IC SRAM 18MBIT PAR 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

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Product details

Overview

IDT71P71604S167BQ from Integrated Device Technology is a 18 Mb (512K × 36-bit) pipelined DDR II SRAM with burst-of-2 operation, 1.8 V core voltage (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible 165-ball fBGA package. It delivers double-data-rate throughput via dual-edge-aligned echo clocks (CQ/CQ), supports scalable output impedance (35–70 Ω), and targets high-bandwidth memory buffering in network packet processors and telecom line cards.

For engineers reviewing the IDT71P71604S167BQ datasheet, IDT71P71604S167BQ pinout, IDT71P71604S167BQ application, or IDT71P71604S167BQ equivalent, this page provides verified pin functions, burst timing behavior, ZQ-controlled impedance calibration, echo clock alignment specs, and validated alternatives for DDR II SRAM migration paths.

Technical Context

The IDT71P71604S167BQ implements a synchronous, pipelined architecture with separate K/K input clocks for address/control/data capture and C/C clocks for DDR data output timing. Its DLL aligns DQ outputs to C/C edges with sub-0.5 ns jitter tolerance, enabling precise data valid windows at 167 MHz (6 ns cycle time).

It features multiplexed address inputs, four independent byte write enables (BW0–BW3), SA0 for burst-order control, and JTAG support (TCK/TMS/TDI/TDO). The device uses HSTL Class I inputs with VREF reference and supports programmable output drive strength via external ZQ resistor (175–350 Ω) tied to VSS.

Key Specifications

Parameter Value and Actual Design Meaning
Density & Organization 18 Mb / 512K × 36-bit - provides wide data path for burst-oriented packet buffering without external width expansion.
Core Voltage (VDD) 1.8 V ± 100 mV - defines low-power logic core operation; must be stable before DLL lock (1024 cycles).
I/O Supply (VDDQ) 1.4–1.9 V - sets HSTL interface level; independent of VDD, enabling mixed-voltage system interfacing.
Max Clock Frequency 167 MHz (tKHKH = 6.0 ns) - determines maximum sustained burst throughput of 1.2 Gbps on 36-bit bus.
Output Impedance Range 35–70 Ω - adjustable via ZQ pin and external resistor; ensures signal integrity across varied PCB trace impedances.
Burst Mode Burst-of-2 only - fixed linear sequence per access; SA0 controls word order within burst for x18/x36 variants.
Timing Reference C/C clocks drive output timing; DLL aligns DQ to C/C rising edges with tCHQV ≤ 0.50 ns - critical for setup/hold margin in high-speed systems.

Pinout & Package

165-ball fine-pitch BGA (fBGA), 13 mm × 15 mm, 1.0 mm pitch, commercial temperature range (0 °C to +70 °C). Ball grid follows JEDEC MO-245 standard.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Data I/O (bidirectional) 36-bit DDR data bus; sampled on K/K rising edges during writes; driven aligned to C/C rising edges during reads; high-Z when deselected.
BW0–BW3 Byte Write Enable (active low) Four independent controls for 36-bit bus: BW0→DQ[8:0], BW1→DQ[17:9], BW2→DQ[26:18], BW3→DQ[35:27]; sampled on both K and K edges.
SA[17:0], SA0 Address Inputs 18-bit address bus (SA[17:1] + SA0); SA0 selects burst order (0→0,1; 1→1,0) and enables word-level addressing in x36 mode.
K, K Primary Input Clock Pair Latches address, R/W, LD, and first/second burst words; drives internal logic and output register when C/C disabled.
C, C Output Clock Pair Drives DQ and CQ/CQ timing; DLL aligns DQ to C/C edges; can be disabled (tied high) to use K/K for output timing.
CQ, CQ Echo Clock Outputs Free-running, non-gated clocks tightly correlated to DQ; rising edge of C → rising/falling edge of CQ; used as data-valid strobes.
ZQ Impedance Calibration Input Connected to 250 Ω resistor to VSS for nominal 50 Ω output drive; ties to VDDQ for minimum impedance (~35 Ω).
VDD, VDDQ, VSS, VREF Power & Reference VDD = 1.8 V core; VDDQ = 1.5 V I/O; VREF = VDDQ/2 reference for HSTL thresholds; all require local decoupling.
TCK, TMS, TDI, TDO JTAG Interface IEEE 1149.1 boundary-scan support; TDI/TMS pulled up internally; enables testability and configuration verification.

Key Features

Feature Design Value
DDR Burst-of-2 Data Bus Delivers two 36-bit words per clock cycle - doubles effective bandwidth vs. single-data-rate SRAMs at same clock frequency.
Programmable Output Impedance 35–70 Ω adjustment via ZQ pin and external resistor - eliminates need for series termination resistors and reduces board area.
DLL-Based Clock Alignment Sub-0.5 ns DQ-to-CQ skew at 167 MHz - enables tight timing margins in multi-device parallel memory interfaces.
HSTL Class I Interface 1.5 V operation with VREF-referenced inputs - compatible with FPGA and ASIC memory controllers requiring low-noise, high-speed signaling.
Scalable I/O Voltage (VDDQ) 1.4–1.9 V range - allows direct interfacing to 1.8 V systems without level shifters while maintaining HSTL compatibility.

Applications

Network Packet Buffering Telecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with deep buffering requirements.

IC Role / Device Role / Timing Role: High-throughput, low-latency SRAM acting as ingress/egress packet buffer; burst-of-2 transfers match typical packet header + payload segmentation.

Use Value: 36-bit width and DDR interface deliver 1.2 Gbps sustained bandwidth at 167 MHz - sufficient for 10 GbE line-rate buffering without interleaving.

Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards where deterministic latency and burst efficiency are critical.

IC Role / Device Role / Timing Role: Synchronous memory co-located with framer ASIC; K/K clocks synchronized to system reference; CQ/CQ used as data-valid strobes for FIFO handshaking.

Use Value: Echo clock alignment (tCQHQV ≤ 0.40 ns) ensures reliable capture by downstream logic, reducing timing closure effort in 10+ Gbps systems.

High-Speed Test Equipment Memory Radar Signal Processing Buffer

Use Scenario: Capturing high-sample-rate digital waveforms in automated test equipment (ATE) with real-time pattern generation.

IC Role / Device Role / Timing Role: Dual-port-like operation via common read/write DQ bus; burst-of-2 matches test vector pair structure; SA0 enables flexible burst ordering.

Use Value: Programmable output impedance (ZQ) allows dynamic tuning to match probe/load variations - improves signal fidelity across multiple DUT interfaces.

Use Scenario: Intermediate storage for digitized RF samples in pulsed radar receivers prior to FFT processing.

IC Role / Device Role / Timing Role: Low-jitter DDR memory interfaced to ADC output and DSP input; DLL lock stability ensures consistent sample timing across temperature.

Use Value: 1.8 V core + 1.5 V I/O reduces power vs. 3.3 V QDR SRAMs while maintaining >1 Gbps throughput - extends thermal headroom in compact radar modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress CY7C2665KV18 Same 512K × 36 organization, 167 MHz speed grade, and 165-ball fBGA; differs in JTAG pinout (TDO on A1 vs. R1) and VREF handling (internal vs. external). Requires PCB layout revision for TDO relocation and VREF bypass; identical burst timing and impedance control behavior. Select when Cypress design ecosystem or legacy board reuse is prioritized over IDT toolchain compatibility.
Micron MT46V32M36P-5B 512K × 36 DDR II SRAM, but rated for 200 MHz (5 ns cycle); uses different DLL calibration method and lacks SA0 burst-order control. Higher max frequency enables tighter timing margins, but absence of SA0 limits burst flexibility in x36 mode. Choose for new designs needing higher speed headroom where burst-order inversion is not required.

Compared with CY7C2665KV18 and MT46V32M36P-5B, the IDT71P71604S167BQ offers unique SA0-controlled burst reversal and standardized ZQ calibration-critical for deterministic latency in telecom buffers-while maintaining pin-compatible footprint with Cypress but requiring minor signal routing adjustments.

Availability

IDT71P71604S167BQ is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, high-speed test equipment memory, and radar signal processing buffer applications requiring stable component supply, long-term lifecycle support, and guaranteed HSTL timing compliance.

Supply support for IDT71P71604S167BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF power solutions for communications and computing infrastructure.

The IDT71P71604S167BQ belongs to IDT's DDR II SRAM product line, designed specifically for high-bandwidth, low-latency memory buffering in networking, telecom, and test equipment where precise echo clock alignment and programmable impedance are essential.

FAQ

What is the function of the SA0 pin on the IDT71P71604S167BQ?

The SA0 pin on the IDT71P71604S167BQ controls burst order in read and write operations for x36 configurations. When SA0 = 0, the burst sequence is word 0 → word 1; when SA0 = 1, it reverses to word 1 → word 0. This enables flexible data alignment without software reordering. SA0 is sampled synchronously with the K clock and is only active on x18 and x36 variants like the IDT71P71604S167BQ.

How does the ZQ pin calibrate output impedance on the IDT71P71604S167BQ?

The ZQ pin on the IDT71P71604S167BQ connects to an external resistor (RQ) tied to VSS; output impedance is set to 0.2 × RQ. For nominal 50 Ω drive, RQ = 250 Ω. The device auto-calibrates every 1024 clock cycles to compensate for voltage/temperature drift. Tying ZQ directly to VDDQ forces minimum impedance (~35 Ω), while open or grounded ZQ disables calibration and risks timing violations.

Can the IDT71P71604S167BQ operate without the DLL enabled?

Yes, the IDT71P71604S167BQ can operate with the DLL disabled by holding the Doff pin low. In this mode, C/C or K/K clocks directly drive the output register, introducing additional propagation delay (not specified in datasheet) and relaxing timing margins. DLL-off operation is valid but requires recalculation of tCHQV/tCHQX parameters and is typically used only for debug or low-speed initialization sequences.

What is the role of the CQ and CQ echo clocks on the IDT71P71604S167BQ?

The CQ and CQ echo clocks on the IDT71P71604S167BQ are free-running, non-gated outputs tightly aligned to DQ data transitions. Rising edge of C generates both edges of CQ; rising edge of C generates both edges of CQ. They serve as hardware data-valid strobes for downstream capture logic, eliminating need for external delay-matched clock distribution and improving timing robustness in multi-SRAM systems.

Does the IDT71P71604S167BQ support JTAG boundary scan, and how is it implemented?

Yes, the IDT71P71604S167BQ supports IEEE 1149.1 JTAG boundary scan via dedicated TCK, TMS, TDI, and TDO pins. TDI and TMS have internal pull-up resistors, allowing safe unconnected states. JTAG enables production testing, interconnect verification, and in-system configuration checks - critical for high-reliability telecom and test equipment using the IDT71P71604S167BQ.

IDT71P71604S167BQ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8.4 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

IDT71P71604S167BQ FAQ

1.How can I place an order for IDT71P71604S167BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71P71604S167BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71P71604S167BQ reliable?

The price and inventory of IDT71P71604S167BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P71604S167BQ is usually 5 days.

3.What payment methods are accepted for IDT71P71604S167BQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P71604S167BQ transactions.

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IDT71P71604S167BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71P71604S167BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71P71604S167BQ?

For technical support, including IDT71P71604S167BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P71604S167BQ requirements.

6.How does Aetrix verify that IDT71P71604S167BQ is sourced from the original manufacturer or authorized distributors?

All IDT71P71604S167BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P71604S167BQ meets industry standards.

7.What is the process for return or replacement of IDT71P71604S167BQ?

All IDT71P71604S167BQ units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P71604S167BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71P71604S167BQ part is unused and in its original packaging.

Return procedure for IDT71P71604S167BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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