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Renesas IDT71P71604S167BQG

Part No.:
IDT71P71604S167BQG
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
AetrixIDT71P71604S167BQG.pdf
Description:
IC SRAM 18MBIT PAR 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,490

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Product details

Overview

IDT71P71604S167BQG from Integrated Device Technology is a 18 Mb (512K × 36-bit) pipelined DDR II SRAM with double-data-rate burst-of-2 operation, 1.8 V core supply (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible interfaces. It delivers 333 MHz clock capability, dual echo clocks (CQ/CQ), and programmable output impedance (35–70 Ω) for high-speed memory subsystems in network packet buffers and telecom line cards.

For engineers reviewing the IDT71P71604S167BQG datasheet, IDT71P71604S167BQG pinout, IDT71P71604S167BQG application, or IDT71P71604S167BQG equivalent, key selection considerations include its 165-ball fBGA package, 1.0 mm pitch, burst-of-2 DDR timing, scalable HSTL I/O voltage range (1.4–1.9 V), and JTAG support for system-level debug and configuration.

Technical Context

The IDT71P71604S167BQG implements a synchronous, pipelined architecture with independent K/K and C/C clock domains: K/K latches address/control/data inputs, while C/C (or echo clocks CQ/CQ) align read data outputs with sub-0.5 ns timing margins. Its DLL ensures tight data-to-clock alignment, and SA0 enables burst-order reversal on x36 devices.

It features multiplexed address bus, common read/write data port (DQ[35:0]), four byte write enables (BW0–BW3), and ZQ-based output impedance calibration. The device supports single-clock mode (C/C tied high), JTAG boundary scan (TDO/TCK/TDI/TMS), and operates across 0°C to +70°C commercial temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
Density / Organization 18 Mb total; 512K × 36-bit configuration - supports wide-data-path buffering in switch fabric and packet classification engines
Clock Frequency Up to 333 MHz (tKHKH = 3.00 ns min) - enables 666 MT/s effective data rate per DQ line in DDR mode
Supply Voltages VDD = 1.7–1.9 V (core); VDDQ = 1.4–1.9 V (I/O) - allows interoperability with 1.5 V HSTL, 1.8 V TTL, or scaled logic interfaces
Output Impedance Programmable 35–70 Ω via external ZQ resistor (175–350 Ω to VSS) - enables precise transmission-line termination for low-noise 167+ MHz bus operation
Timing Reference CQ/CQ echo clocks aligned to DQ outputs within ±0.25 ns (tCQHQV/tCQHQX) - eliminates need for external deskew circuitry in multi-device systems
Package 165-ball fine-pitch BGA (13 mm × 15 mm, 1.0 mm pitch) - matches standard PCB routing density for high-pin-count memory modules
Temperature Range Commercial: 0°C to +70°C ambient - validated for use in non-extended-temperature networking and industrial control applications

Pinout & Package

Package: 165-ball fBGA (13 mm × 15 mm, 1.0 mm pitch), RoHS-compliant, ball map per IDT Advance Information DSC-6112/00.

Pin/Terminal Circuit Role Design Meaning
DQ[35:0] Data I/O (bidirectional) 36-bit DDR data bus; sampled on K/K rising edges during writes; driven aligned to C/C or K/K rising edges during reads
BW0–BW3 Byte Write Enable (active low) Independent control of four 9-bit bytes; sampled on both K and K rising edges to latch each word of burst
K, K Primary input clocks Edge-triggered capture of address, R/W, LD, BWx, and first/second burst data words; define all setup/hold timing windows
C, C Secondary output clocks Deskew-capable clocks used to sample read data; when disabled, K/K assume output timing role
CQ, CQ Echo clock outputs Synchronous, free-running clocks tightly aligned to DQ outputs (±0.25 ns); used as data-valid strobes by controller
ZQ Impedance calibration reference Connect to 250 Ω resistor to VSS for nominal 50 Ω output drive; ties to VDDQ for minimum impedance mode
VDD, VSS, VDDQ, VREF Power and reference rails VDD = 1.8 V core; VDDQ = 1.5 V I/O; VREF = VDDQ/2 static reference for HSTL threshold setting
TDO, TCK, TDI, TMS JTAG boundary-scan interface IEEE 1149.1-compliant test access port for production testing and in-system verification

Key Features

Feature Design Value
Burst-of-2 DDR data transfer Two 36-bit words per clock cycle on DQ[35:0], doubling effective bandwidth without increasing clock frequency
Dual echo clock generation (CQ/CQ) Hardware-generated, phase-aligned strobes eliminate controller-side delay compensation and simplify timing closure
Programmable output impedance (35–70 Ω) On-die calibration via ZQ pin enables dynamic adaptation to PCB trace impedance variations across voltage/temperature
HSTL I/O with scalable voltage (1.4–1.9 V) Interoperates with 1.5 V HSTL, 1.8 V TTL, and mixed-voltage memory controllers without level shifters
SA0-controlled burst order reversal Enables linear or wrapped burst addressing at word granularity - critical for efficient cache line fills in x36 configurations
JTAG boundary-scan support Full IEEE 1149.1 compliance enables automated test pattern generation and interconnect validation in dense layouts

Applications

Network Packet Buffer Telecom Line Card Memory

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with real-time forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer providing 666 MT/s DDR throughput and deterministic burst-of-2 latency.

Use Value: Enables full-line-rate processing at 10 Gbps+ by eliminating memory bottlenecks during concurrent read-modify-write operations.

Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers requiring synchronized, jitter-tolerant memory access.

IC Role / Device Role / Timing Role: Synchronous DDR II SRAM with echo clocks (CQ/CQ) serving as timing-reference source for FPGA-based framer logic.

Use Value: Eliminates external clock deskew ICs and reduces board-level timing uncertainty to ±0.4 ns across 36-bit data path.

High-Speed Test Equipment Memory Radar Signal Processing Buffer

Use Scenario: Capturing high-fidelity digital waveforms in automated test equipment with deep acquisition depth requirements.

IC Role / Device Role / Timing Role: Pipelined burst SRAM acting as front-end acquisition buffer interfaced to high-speed ADCs and FPGA sequencers.

Use Value: Supports continuous streaming at 333 MHz clock rate with no gaps between bursts, enabling >1 Gsample/s sustained capture.

Use Scenario: Real-time FFT windowing and Doppler processing in phased-array radar systems with strict deterministic latency.

IC Role / Device Role / Timing Role: Low-jitter DDR II memory providing time-aligned sample storage for parallel FFT engines.

Use Value: DLL-synchronized CQ/CQ outputs ensure sub-cycle timing correlation between memory reads and DSP pipeline triggers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress CY7C1415KV18 Same 512K × 36 organization, but QDR-II architecture (separate read/write ports); 1.8 V core only; no ZQ calibration Requires separate read/write address buses; better suited for true dual-port workloads like cache tag RAM Select IDT71P71604S167BQG when common-address, burst-of-2 DDR simplicity and impedance tuning are prioritized over dual-port concurrency.
Micron MT55LSD128H36BG DDR2 SDRAM (not SRAM); 128M × 36 organization; requires refresh; higher density but higher latency Used in large-frame buffers where capacity outweighs determinism; not suitable for zero-wait-state control paths IDT71P71604S167BQG is preferred for applications demanding guaranteed sub-10 ns read latency and no refresh overhead.

Compared with CY7C1415KV18 and MT55LSD128H36BG, the IDT71P71604S167BQG offers deterministic burst-of-2 latency, on-die impedance tuning for signal integrity, and simpler control logic-making it optimal for real-time packet buffering and test instrumentation where timing predictability is non-negotiable.

Availability

IDT71P71604S167BQG is available at Aetrix Electronics and suitable for network packet buffers, telecom line card memory, high-speed test equipment memory, and radar signal processing buffers requiring stable component supply and long-term obsolescence management.

Supply support for IDT71P71604S167BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The IDT71P71604S167BQG belongs to IDT's DDR II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in carrier-grade networking and test equipment.

FAQ

What is the maximum operating frequency of the IDT71P71604S167BQG?

The IDT71P71604S167BQG supports up to 333 MHz clock frequency (tKHKH = 3.00 ns minimum), delivering an effective 666 MT/s data rate on its 36-bit DDR bus. This rating is specified under commercial conditions (0°C to +70°C, VDD = 1.7–1.9 V, VDDQ = 1.4–1.9 V) and assumes proper ZQ calibration and signal integrity design per the advance information document DSC-6112/00.

Does the IDT71P71604S167BQG require external termination resistors?

No - the IDT71P71604S167BQG integrates programmable output drivers calibrated via the ZQ pin. Connecting a 250 Ω resistor from ZQ to VSS sets nominal 50 Ω drive strength; values from 175 Ω to 350 Ω adjust impedance between 35 Ω and 70 Ω. External series or parallel termination is unnecessary when ZQ is properly configured.

How does the SA0 pin function on the IDT71P71604S167BQG?

On the IDT71P71604S167BQG (a 512K × 36 device), the SA0 pin controls burst order: when SA0 = 0, the burst proceeds linearly (word 0 → word 1); when SA0 = 1, it reverses (word 1 → word 0). This enables flexible cache-line handling and optimized data alignment without software intervention - a feature exclusive to x18 and x36 variants.

Can the IDT71P71604S167BQG operate with only the K/K clocks enabled?

Yes - the IDT71P71604S167BQG supports single-clock mode. When C and C are tied high, K/K clocks fully manage both input capture and output timing, including echo clock generation. In this mode, DQ outputs align to K/K rising edges, and CQ/CQ remain functional as echo clocks derived from K/K.

What is the purpose of the Doff pin on the IDT71P71604S167BQG?

The Doff pin disables the internal delay-locked loop (DLL) in the IDT71P71604S167BQG. When pulled low, the DLL is turned off, resulting in increased propagation delay from clock to DQ output (not characterized as a production parameter). Use Doff only when DLL-induced jitter reduction is unnecessary and fixed latency is acceptable.

IDT71P71604S167BQG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
167 MHz
Write Cycle Time - Word, Page:
-
Access Time:
8.4 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

IDT71P71604S167BQG FAQ

1.How can I place an order for IDT71P71604S167BQG through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71P71604S167BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71P71604S167BQG reliable?

The price and inventory of IDT71P71604S167BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P71604S167BQG is usually 5 days.

3.What payment methods are accepted for IDT71P71604S167BQG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P71604S167BQG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71P71604S167BQG?

IDT71P71604S167BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71P71604S167BQG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71P71604S167BQG?

For technical support, including IDT71P71604S167BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P71604S167BQG requirements.

6.How does Aetrix verify that IDT71P71604S167BQG is sourced from the original manufacturer or authorized distributors?

All IDT71P71604S167BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P71604S167BQG meets industry standards.

7.What is the process for return or replacement of IDT71P71604S167BQG?

All IDT71P71604S167BQG units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P71604S167BQG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71P71604S167BQG part is unused and in its original packaging.

Return procedure for IDT71P71604S167BQG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71P71604S167BQG Tags

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