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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas IDT71P71604S200BQ

Name: IDT71P71604S200BQ
Brand: Renesas
SKU: IDT71P71604S200BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDT71P71604S200BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: IDT71P71604S200BQ.pdf

Description:: IC SRAM 18MBIT PAR 165CABGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IDT71P71604S200BQ from Integrated Device Technology is a 18 Mb (512K × 36-bit) pipelined DDR-II SRAM with double-data-rate burst-of-2 operation, 1.8 V core voltage (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible 165-ball fBGA package. It delivers 2-word bursts per clock cycle on a bidirectional data bus, supports scalable output impedance (35–70 Ω), and targets high-bandwidth networking and packet buffering applications.

For engineers reviewing the IDT71P71604S200BQ datasheet, IDT71P71604S200BQ pinout, IDT71P71604S200BQ application, or IDT71P71604S200BQ equivalent, key selection criteria include DDR-II timing compliance at 200 MHz, dual echo clock (CQ/CQ) alignment, programmable ZQ impedance control, and burst-order reversal via SA0 for x36 configuration.

Technical Context

The IDT71P71604S200BQ implements a synchronous DDR architecture with two independent clock domains: K/K for address/control/data capture and C/C for read data output and echo clock generation. Its internal DLL tightly aligns CQ/CQ edges to DQ output transitions, achieving ±0.25 ns output valid/hold windows at 200 MHz.

It features multiplexed address inputs, common read/write data port (DQ[35:0]), four byte write enables (BW0–BW3), JTAG boundary-scan support (TCK/TMS/TDI/TDO), and dynamic output impedance tuning via external ZQ resistor (175–350 Ω). The device operates in commercial temperature range (0°C to +70°C) with VDD = 1.7–1.9 V and VDDQ = 1.4–1.9 V.

Key Specifications

Parameter	Value and Actual Design Meaning
Density & Organization	18 Mb / 512K × 36-bit - provides wide data path for packet header+payload storage in switch fabric buffers
Max Clock Frequency	200 MHz (tKHKH = 5.00 ns) - defines maximum sustained burst throughput of 1.6 Gbps on DQ bus
Data Bus Interface	DDR bidirectional DQ[35:0] with HSTL Class I - enables noise-immune, high-speed signaling compatible with FPGA memory controllers
Core & I/O Voltages	VDD = 1.8 V ±100 mV; VDDQ = 1.5 V (scalable 1.4–1.9 V) - allows interface voltage matching to 1.5 V or 1.8 V system logic
Output Impedance Range	35 Ω to 70 Ω (via ZQ pin and external 175–350 Ω resistor) - enables precise transmission line termination for signal integrity across PCB traces
Timing Reference	DLL-synchronized CQ/CQ echo clocks - eliminates board-level skew between data and strobe, simplifying timing closure in multi-device systems
Package	165-ball fine-pitch BGA (13 mm × 15 mm, 1.0 mm pitch) - supports high-density routing while maintaining thermal performance in telecom modules

Pinout & Package

165-ball fBGA (13 mm × 15 mm, 1.0 mm pitch), RoHS-compliant, commercial temperature grade (0°C to +70°C).

Pin/Terminal	Circuit Role	Design Meaning
DQ[35:0]	Data I/O (bidirectional)	Synchronous DDR data bus; sampled on K/K rising edges during writes, driven aligned to C/C rising edges during reads
BW0–BW3	Byte Write Enable (active low)	Selects 8-bit bytes within 36-bit word; BW0 controls DQ[8:0], BW1 → DQ[17:9], BW2 → DQ[26:18], BW3 → DQ[35:27]
SA[17:0], SA0	Address Inputs + Burst Order Bit	18-bit address bus; SA0 reverses linear burst order (0→a,b; 1→b,a) for x36 devices only
K, K	Primary Input Clock Pair	Latches address, R/W, LD, BWx, and first/second burst words; used for all control and write data capture
C, C	Output Clock Pair	Drives read data from output register; generates echo clocks CQ/CQ; may be disabled (tied high) to use K/K for output timing
CQ, CQ	Echo Clock Outputs	Rising/falling edges tightly correlated to DQ transitions; free-running, never tri-stated - serves as data-valid strobe for controller sampling
ZQ	Impedance Calibration Input	Connects to external resistor (175–350 Ω) to ground; sets DQ/CQ output drive strength; tying to VDDQ forces minimum 35 Ω mode
VDD, VSS	Core Power/Ground	1.8 V core supply; requires local decoupling; VSS pins distributed across package for low-inductance return paths
VDDQ, VREF	I/O Supply & Reference	1.5 V (or scaled) I/O rail; VREF = VDDQ/2 sets HSTL switching threshold - must be stable and low-noise
TCK, TMS, TDI, TDO	JTAG Boundary-Scan Interface	IEEE 1149.1 compliant; enables production test and interconnect verification without physical probe access

Key Features

Feature	Design Value
DDR-II Burst-of-2 Architecture	Delivers two data words per clock cycle on shared DQ bus - doubles effective bandwidth versus single-data-rate SRAMs at same clock rate
Programmable Output Impedance	Adjusts DQ/CQ drive strength via ZQ pin and external resistor - matches PCB trace impedance to minimize reflections and overshoot
DLL-Synchronized Echo Clocks	CQ/CQ edges aligned to DQ transitions within ±0.25 ns - eliminates setup/hold uncertainty for high-speed controller sampling
HSTL-Compatible I/O	Meets JEDEC HSTL Class I specifications at 1.5 V - ensures interoperability with Xilinx Virtex-4/5, Altera Stratix II/III, and ASIC memory interfaces
SA0-Controlled Burst Reversal	Enables burst order inversion (a,b ↔ b,a) on x36 parts - supports flexible packet reordering without software overhead
JTAG Boundary-Scan Support	Full IEEE 1149.1 implementation with TAP controller - enables automated test of solder joints and interconnects in dense BGA layouts

Applications

Packet Buffering in Layer 2 Switches	High-Speed Network Processor Cache
Use Scenario: Storing ingress/egress packet headers and payload fragments in cut-through switching pipelines. IC Role / Device Role / Timing Role: As a 36-bit-wide DDR-II SRAM, IDT71P71604S200BQ serves as the primary packet buffer with burst-of-2 reads/writes synchronized to network controller clocks. Use Value: 200 MHz DDR operation delivers 1.44 GB/s peak bandwidth - sufficient for 10-Gbps Ethernet line-rate buffering with sub-100 ns latency.	Use Scenario: Acting as instruction/data cache for multi-threaded network processors handling deep packet inspection. IC Role / Device Role / Timing Role: IDT71P71604S200BQ provides low-latency, deterministic access to cached flow tables and signature patterns using HSTL I/O and DLL-aligned echo clocks. Use Value: Programmable ZQ impedance and tight CQ-to-DQ timing (±0.25 ns) enable reliable operation at 200 MHz across varying PVT conditions.
Telecom Line Card Memory Subsystem	Backplane Interconnect Buffering
Use Scenario: Buffering ATM or SONET cell payloads in modular optical line cards with hot-swap capability. IC Role / Device Role / Timing Role: IDT71P71604S200BQ functions as a burst-access FIFO with SA0-controlled burst ordering to match cell alignment requirements. Use Value: 165-ball fBGA footprint and 1.8 V core reduce power density and thermal stress in conduction-cooled line card designs.	Use Scenario: Decoupling timing skew between parallel backplane lanes carrying aggregated 40G/100G traffic. IC Role / Device Role / Timing Role: IDT71P71604S200BQ uses dual echo clocks (CQ/CQ) to deskew data across multiple devices, enabling synchronous readout from distributed buffers. Use Value: C/C clock deskew capability and DLL lock retention (≥1024 cycles) maintain phase alignment across temperature drift and supply variation.

Packet Buffering in Layer 2 Switches

High-Speed Network Processor Cache

Use Scenario: Storing ingress/egress packet headers and payload fragments in cut-through switching pipelines.

IC Role / Device Role / Timing Role: As a 36-bit-wide DDR-II SRAM, IDT71P71604S200BQ serves as the primary packet buffer with burst-of-2 reads/writes synchronized to network controller clocks.

Use Value: 200 MHz DDR operation delivers 1.44 GB/s peak bandwidth - sufficient for 10-Gbps Ethernet line-rate buffering with sub-100 ns latency.

Use Scenario: Acting as instruction/data cache for multi-threaded network processors handling deep packet inspection.

IC Role / Device Role / Timing Role: IDT71P71604S200BQ provides low-latency, deterministic access to cached flow tables and signature patterns using HSTL I/O and DLL-aligned echo clocks.

Use Value: Programmable ZQ impedance and tight CQ-to-DQ timing (±0.25 ns) enable reliable operation at 200 MHz across varying PVT conditions.

Telecom Line Card Memory Subsystem

Backplane Interconnect Buffering

Use Scenario: Buffering ATM or SONET cell payloads in modular optical line cards with hot-swap capability.

IC Role / Device Role / Timing Role: IDT71P71604S200BQ functions as a burst-access FIFO with SA0-controlled burst ordering to match cell alignment requirements.

Use Value: 165-ball fBGA footprint and 1.8 V core reduce power density and thermal stress in conduction-cooled line card designs.

Use Scenario: Decoupling timing skew between parallel backplane lanes carrying aggregated 40G/100G traffic.

IC Role / Device Role / Timing Role: IDT71P71604S200BQ uses dual echo clocks (CQ/CQ) to deskew data across multiple devices, enabling synchronous readout from distributed buffers.

Use Value: C/C clock deskew capability and DLL lock retention (≥1024 cycles) maintain phase alignment across temperature drift and supply variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY7C2665KV18	Same 512K×36 organization, 200 MHz speed grade, but uses SSTL-2 I/O (2.5 V) instead of HSTL; no ZQ calibration; fixed 50 Ω output drive	Requires 2.5 V I/O rail and level-shifting for 1.5 V/1.8 V systems; lacks dynamic impedance tuning for trace-length variation	Select when interfacing with legacy 2.5 V FPGAs or where ZQ calibration adds design complexity
Micron MT46V32M36F-5B	DDR SDRAM (not SRAM); 32M×36 organization; 2.5 V SSTL-2 I/O; requires refresh; higher density but higher latency	Not drop-in compatible - needs memory controller with refresh logic, burst-length configuration, and auto-precharge management	Choose for cost-sensitive, high-capacity buffering where deterministic latency is less critical than density

Compared with CY7C2665KV18 and MT46V32M36F-5B, the IDT71P71604S200BQ offers superior timing determinism (no refresh, no command scheduling), native 1.5 V HSTL compatibility, and field-adjustable output impedance - making it optimal for low-latency, high-reliability telecom and networking datapaths.

Availability

IDT71P71604S200BQ is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor caching, and telecom line card memory subsystems requiring stable component supply, long-term lifecycle support, and guaranteed commercial-grade performance.

Supply support for IDT71P71604S200BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance interconnect solutions.

The IDT71P71604S200BQ belongs to IDT's DDR-II SRAM product line, designed specifically for deterministic, low-latency, high-bandwidth memory applications in networking, telecommunications, and high-end computing infrastructure.

FAQ

What is the maximum operating frequency of the IDT71P71604S200BQ?

The IDT71P71604S200BQ is rated for 200 MHz operation, corresponding to a minimum average clock cycle time (tKHKH) of 5.00 ns. At this frequency, it achieves a peak data transfer rate of 1.44 GB/s on its 36-bit DDR bus. The device also supports lower speeds (167 MHz, 250 MHz, 300 MHz, 333 MHz) with corresponding timing adjustments, but 200 MHz is the validated commercial-grade speed grade for the S200 suffix.

How does the ZQ pin function on the IDT71P71604S200BQ?

The ZQ pin on the IDT71P71604S200BQ connects to an external resistor (175–350 Ω) tied to VSS to calibrate output driver impedance. The device sets DQ and CQ output impedance to 0.2 × RQ - e.g., 250 Ω RQ yields 50 Ω nominal drive strength. This calibration occurs every 1024 clock cycles to compensate for voltage and temperature drift. Tying ZQ to VDDQ forces minimum 35 Ω drive.

Does the IDT71P71604S200BQ support burst order reversal, and how is it controlled?

Yes, the IDT71P71604S200BQ supports burst order reversal via the SA0 input pin, which is available only on x18 and x36 configurations like this part. When SA0 = 0, the burst sequence is linear (a,b); when SA0 = 1, it reverses to (b,a). This feature enables flexible data reordering in packet processing without software intervention or additional memory accesses.

What are the voltage requirements for VDD, VDDQ, and VREF on the IDT71P71604S200BQ?

The IDT71P71604S200BQ requires VDD = 1.7–1.9 V (nominal 1.8 V) for core logic, VDDQ = 1.4–1.9 V (typically 1.5 V) for I/O drivers, and VREF = VDDQ/2 (e.g., 0.75 V at 1.5 V VDDQ). VREF must be stable and low-noise, as it sets the HSTL input threshold and AC measurement reference level for all I/O signals.

Is JTAG boundary-scan supported on the IDT71P71604S200BQ, and which pins are used?

Yes, the IDT71P71604S200BQ fully supports IEEE 1149.1 JTAG boundary-scan. Pins TCK (pin R2), TMS (pin R10), TDI (pin R11), and TDO (pin R1) implement the Test Access Port. Internal pull-up resistors on TDI and TMS eliminate need for external biasing. This enables production test of solder joints and interconnects in high-density BGA assemblies.

IDT71P71604S200BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, DDR II

Memory Size:: 18Mbit

Memory Organization:: 512K x 36

Memory Interface:: Parallel

Clock Frequency:: 200 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 7.88 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

IDT71P71604S200BQ FAQ

1.How can I place an order for IDT71P71604S200BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71P71604S200BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71P71604S200BQ reliable?

The price and inventory of IDT71P71604S200BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P71604S200BQ is usually 5 days.

3.What payment methods are accepted for IDT71P71604S200BQ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P71604S200BQ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71P71604S200BQ?

IDT71P71604S200BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71P71604S200BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71P71604S200BQ?

For technical support, including IDT71P71604S200BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P71604S200BQ requirements.

6.How does Aetrix verify that IDT71P71604S200BQ is sourced from the original manufacturer or authorized distributors?

All IDT71P71604S200BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P71604S200BQ meets industry standards.

7.What is the process for return or replacement of IDT71P71604S200BQ?

All IDT71P71604S200BQ units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P71604S200BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71P71604S200BQ part is unused and in its original packaging.

Return procedure for IDT71P71604S200BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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