Renesas IDT71P71604S200BQG

Overview

IDT71P71604S200BQG from Integrated Device Technology is a 18 Mb (512K × 36-bit) pipelined DDR II SRAM with double-data-rate burst-of-2 operation, 1.8 V core voltage (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible interfaces. It delivers 333 MHz clock frequency support, scalable 35–70 Ω output impedance via ZQ calibration, and dual echo clocks (CQ/CQ) for precise data capture in high-speed networking and packet buffering applications.

For engineers reviewing the IDT71P71604S200BQG datasheet, IDT71P71604S200BQG pinout, IDT71P71604S200BQG application, or IDT71P71604S200BQG equivalent, this device requires attention to its 165-ball fBGA package, dual-clock (K/K and C/C) timing architecture, burst-order control via SA0, byte-write enable mapping (BW0–BW3), and JTAG debug interface - all critical for DDR memory subsystem validation and signal integrity planning.

Technical Context

The IDT71P71604S200BQG implements a synchronous, pipelined DDR architecture where each K-clock cycle initiates one read or write access, and each access delivers two data words on the 36-bit DQ[35:0] bus using both rising and falling edges of C/C clocks. Its DLL aligns output data to echo clocks within ±0.25 ns, enabling tight setup/hold margins at 333 MHz.

It features separate VDD (1.8 V) and VDDQ (1.4–1.9 V) supplies, programmable output impedance calibrated via external ZQ resistor (175–350 Ω), and HSTL-compliant inputs referenced to VREF = VDDQ/2. The SA0 pin enables burst-order reversal and individual-word addressing in x36 mode, while BW0–BW3 provide per-byte write control across all 36 bits.

Key Specifications

Pinout & Package

Package: 165-ball fBGA (13 mm × 15 mm, 1.0 mm pitch), RoHS-compliant, commercial temperature range (0°C to +70°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed DDR SRAM applications.

Compared with CY7C2663KV18 and MT46V32M36P-5B, the IDT71P71604S200BQG uniquely combines ZQ-calibrated drive strength, SA0-controlled burst sequencing, and true pipelined DDR SRAM behavior - making it the only option among the three that supports both impedance-matched signal integrity and deterministic, refresh-free memory access in high-end telecom infrastructure.

Availability

IDT71P71604S200BQG is available at Aetrix Electronics and suitable for high-speed packet buffering, network switch fabric memory, telecom line card buffering, and ATE pattern memory applications requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for IDT71P71604S200BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The IDT71P71604S200BQG belongs to IDT's QDR™ II SRAM family - engineered specifically for deterministic, low-latency, high-bandwidth memory subsystems in networking and telecom infrastructure where DDR timing predictability and signal integrity are mission-critical.

FAQ

What is the maximum supported clock frequency for IDT71P71604S200BQG?

IDT71P71604S200BQG supports up to 333 MHz for K/K and C/C clocks, corresponding to a minimum average clock cycle time (tKHKH) of 3.00 ns. This enables a 666 MT/s effective data rate on its 36-bit DDR bus. Operation at this speed requires compliance with specified setup/hold times, VDD/VDDQ tolerances, and DLL lock conditions as defined in the advance information document DSC-6112/00.

How does the ZQ pin function in IDT71P71604S200BQG?

The ZQ pin on IDT71P71604S200BQG connects to an external resistor (175–350 Ω) tied to VSS to calibrate output driver impedance. The device sets DQ and CQ output impedance to 0.2 × RQ, yielding 35–70 Ω range. Calibration occurs every 1024 clock cycles to compensate for voltage/temperature drift. Tying ZQ to VDDQ forces minimum impedance mode (≈35 Ω), while leaving it unconnected or grounded violates specification.

Does IDT71P71604S200BQG support burst-order reversal, and how is it controlled?

Yes, IDT71P71604S200BQG supports burst-order reversal via the SA0 pin - a feature exclusive to x18 and x36 configurations. When SA0 = 0, the burst proceeds linearly (word a, then word b); when SA0 = 1, it reverses (word b, then word a). This enables flexible data packing for endian conversion or custom protocol alignment without software intervention.

What are the key differences between K/K and C/C clock inputs in IDT71P71604S200BQG?

K/K clocks latch address, control signals (R/W, LD, BWx), and write data; they initiate all memory operations. C/C clocks drive read data output timing and generate echo clocks (CQ/CQ). When C/C are disabled (tied high), K/K assume both roles. The DLL aligns DQ outputs to C/C edges - not K/K - unless DLL is disabled via Doff pin, in which case propagation delay increases significantly.

Can IDT71P71604S200BQG operate with different VDDQ and VDD voltages, and what are the limits?

Yes, IDT71P71604S200BQG requires independent VDD (core, 1.7–1.9 V) and VDDQ (I/O, 1.4–1.9 V) supplies. VDDQ must never exceed VDD during operation. This separation allows interfacing with 1.5 V HSTL, 1.8 V TTL, or other logic families while maintaining 1.8 V core efficiency. VREF is internally derived as VDDQ/2 and must remain within 0.68–0.95 V per specification.