Renesas IDT71P71604S250BQ
- Part No.:
- IDT71P71604S250BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
IDT71P71604S250BQ.pdf
- Description:
- IC SRAM 18MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71P71604S250BQ from Integrated Device Technology is a 18 Mb (512K × 36-bit) pipelined DDR-II SRAM with double-data-rate burst-of-2 operation, 1.8 V core voltage (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible interfaces. It delivers 333 MHz clock frequency support, dual echo clocks (CQ/CQ), and programmable output impedance (35–70 Ω) for high-speed memory subsystems in network packet buffers and telecom line cards.
For engineers reviewing the IDT71P71604S250BQ datasheet, IDT71P71604S250BQ pinout, IDT71P71604S250BQ application, or IDT71P71604S250BQ equivalent, key selection considerations include burst-of-2 DDR timing alignment, ZQ-controlled output drive strength, SA0-based burst-order control for x36 mode, and 165-ball fBGA package compatibility with high-density PCB layouts.
Technical Context
The IDT71P71604S250BQ implements a synchronous, pipelined architecture with independent K/K and C/C clock domains: K/K latches address/control/data on rising edges, while C/C (or echo clocks CQ/CQ) govern read data output timing via an internal DLL. Its DDR interface transfers two words per clock cycle on a 36-bit bidirectional DQ[35:0] bus, enabling 2.4 Gbps peak bandwidth at 333 MHz.
It supports scalable I/O voltage (1.4–1.9 V VDDQ), HSTL-compliant inputs with VREF reference, and dynamic output impedance tuning via external ZQ resistor (175–350 Ω). The device includes JTAG (TCK/TMS/TDI/TDO), DLL disable (Doff), and burst-order control via SA0 - all confirmed for the 512K × 36 configuration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 18 Mb / 512K × 36-bit - provides wide-data-path buffering for packet header processing and frame assembly. |
| Core Voltage (VDD) | 1.8 V ± 100 mV - enables low-power operation while maintaining timing margins for high-speed logic. |
| I/O Supply (VDDQ) | 1.4–1.9 V - allows direct interfacing with 1.5 V HSTL, 1.8 V TTL, or custom voltage systems. |
| Max Clock Frequency | 333 MHz - defines maximum sustained burst throughput of 2.4 Gbps (333 MHz × 2 × 36 bits). |
| Burst Mode | Burst-of-2 DDR - guarantees two consecutive words per access, eliminating single-word latency penalties in streaming applications. |
| Output Impedance Range | 35–70 Ω - adjustable via ZQ pin to match PCB trace impedance and minimize signal reflections. |
| Package | 165-ball fine-pitch BGA (13 mm × 15 mm, 1.0 mm pitch) - supports high I/O count in space-constrained telecom modules. |
Pinout & Package
Package: 165-ball fBGA (13 mm × 15 mm, 1.0 mm pitch), RoHS-compliant, commercial temperature range (0°C to +70°C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Bi-directional data I/O | 36-bit DDR data bus; samples input on K/K rising edges, drives aligned to C/C or CQ/CQ rising edges. |
| K, K | Primary input clocks | Latch address, control (R/W, LD, BWx), and write data; also drive outputs if C/C disabled. |
| C, C | Secondary output clocks | Control read data timing and generate echo clocks; enable DLL-based deskew for multi-device synchronization. |
| CQ, CQ | Output echo clocks | Tightly aligned with DQ outputs; provide data-valid strobes independent of device enable state. |
| SA0 | Burst-order address bit | Reverses linear burst sequence (a,b → b,a) for x36 devices; enables word-level addressing within burst. |
| ZQ | Impedance calibration input | Connects to external resistor (175–350 Ω) to set output drive strength; ties to VDDQ for minimum 35 Ω mode. |
| Doff | DLL disable control | Disables internal delay-locked loop; increases C/K-to-DQ propagation delay but simplifies timing closure in non-critical paths. |
| VREF | HSTL reference voltage | Static input setting threshold for all HSTL inputs/outputs; must be stable at VDDQ/2 ± 0.12 V. |
Key Features
| Feature | Design Value |
|---|---|
| DDR burst-of-2 data transfer | Delivers two words per clock cycle on 36-bit bus, doubling effective bandwidth versus SDR without increasing clock rate. |
| Programmable output impedance | Adjusts drive strength (35–70 Ω) via ZQ pin to match system trace impedance and suppress ringing on long stubs. |
| Dual echo clock generation (CQ/CQ) | Provides deterministic, low-jitter data-valid strobes tightly correlated to DQ outputs for reliable capture by controllers. |
| SA0-controlled burst order reversal | Enables flexible burst sequencing (0→1 or 1→0) for x36 mode, supporting optimized data packing in protocol engines. |
| JTAG boundary-scan support | Includes TCK/TMS/TDI/TDO pins for IEEE 1149.1-compliant testing and debug of high-speed memory interconnects. |
Applications
| Network Packet Buffer | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches with strict latency requirements. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer providing burst-of-2 DDR reads/writes synchronized to switch fabric clocks. Use Value: 333 MHz operation and 36-bit width enable full-line-rate buffering for 10 Gbps interfaces without external multiplexing. | Use Scenario: Holding ATM cell headers, SONET/SDH overhead bytes, and signaling data in carrier-grade optical line cards. IC Role / Device Role / Timing Role: Pipelined SRAM acting as descriptor cache and frame assembly buffer with deterministic burst timing. Use Value: Dual echo clocks (CQ/CQ) allow precise deskew across multiple SRAMs, ensuring coherent timing across distributed line card memory banks. |
| High-Speed Test Equipment Memory | Radar Signal Processing Buffer |
Use Scenario: Capturing high-sample-rate digital waveforms in automated test equipment (ATE) with real-time pattern matching. IC Role / Device Role / Timing Role: Burst-access memory staging raw ADC data for on-the-fly comparison against golden patterns. Use Value: Programmable output impedance (via ZQ) maintains signal integrity on 100+ mm traces between SRAM and FPGA logic, reducing bit errors. | Use Scenario: Buffering chirp sequences and FFT intermediate results in phased-array radar front-ends requiring deterministic latency. IC Role / Device Role / Timing Role: Low-jitter DDR-II SRAM delivering time-aligned sample bursts to DSP cores for pulse compression. Use Value: SA0-controlled burst reversal enables optimal mapping of radar pulse segments into contiguous 36-bit words, minimizing address translation overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR-II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1415V25 | Same 512K × 36 organization, 333 MHz, 1.8 V core, but uses SSTL-2 I/O (not HSTL) and lacks ZQ impedance tuning. | Requires different termination scheme and reference voltage design; no echo clock deskew capability. | Select when SSTL-2 ecosystem is already established and impedance tuning is not required. |
| Micron MT46V32M36 | DDR2 SDRAM (not SRAM), 32M × 36, 200 MHz, 1.8 V, requires refresh and command decoding logic. | Higher density but introduces latency variability and controller complexity; unsuitable for deterministic real-time buffering. | Select only for cost-sensitive, non-real-time bulk storage where refresh tolerance is acceptable. |
Compared with CY7C1415V25 and MT46V32M36, the IDT71P71604S250BQ uniquely combines HSTL interface compatibility, ZQ-calibrated drive strength, and echo-clock deskew-critical for jitter-sensitive telecom and test equipment designs requiring guaranteed sub-nanosecond timing alignment.
Availability
IDT71P71604S250BQ is available at Aetrix Electronics and suitable for network packet buffers, telecom line cards, high-speed test equipment, and radar signal processing systems requiring stable component supply and long-term obsolescence management.
Supply support for IDT71P71604S250BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.
The IDT71P71604S250BQ belongs to IDT's DDR-II SRAM product line, engineered specifically for deterministic, low-latency, high-bandwidth memory buffering in carrier-grade networking and high-performance instrumentation.
FAQ
What is the maximum supported clock frequency for IDT71P71604S250BQ?
IDT71P71604S250BQ supports up to 333 MHz average clock cycle time (tKHKH = 3.00 ns min), verified across commercial temperature range (0°C to +70°C) with VDD = 1.8 V ± 100 mV and VDDQ = 1.4–1.9 V. This enables 2.4 Gbps peak data throughput using its burst-of-2 DDR architecture on the 36-bit DQ bus.
How does the ZQ pin function in IDT71P71604S250BQ?
The ZQ pin on IDT71P71604S250BQ connects to an external resistor (175–350 Ω) tied to VSS to calibrate output driver impedance. The device sets DQ output impedance to 0.2 × RQ, yielding 35–70 Ω range. Tying ZQ directly to VDDQ forces minimum 35 Ω mode. Calibration occurs every 1024 clock cycles to compensate for voltage/temperature drift.
Does IDT71P71604S250BQ support burst order reversal, and how is it controlled?
Yes, IDT71P71604S250BQ supports burst order reversal exclusively in x36 mode via the SA0 pin. When SA0 = 0, burst sequence is (a,b); when SA0 = 1, it reverses to (b,a). This feature is documented in the Linear Burst Sequence Table and applies only to x18/x36 variants-not x8/x9-enabling optimized data layout for protocol-specific word ordering.
What are the voltage requirements for VDD, VDDQ, and VREF on IDT71P71604S250BQ?
IDT71P71604S250BQ requires VDD = 1.7–1.9 V (core), VDDQ = 1.4–1.9 V (I/O), and VREF = 0.68–0.95 V (set to VDDQ/2 ± 0.12 V). VDDQ must not exceed VDD during operation. These ranges ensure HSTL compliance, support scalable interface voltages, and maintain valid input thresholds across process/voltage/temperature corners.
Can IDT71P71604S250BQ operate with only one clock pair, and what is the impact?
Yes, IDT71P71604S250BQ supports single-clock mode: tie C and C high to disable them, causing K/K to control both input latching and output timing. In this mode, DQ outputs align to K/K rising edges instead of C/C, and echo clocks CQ/CQ derive from K/K. DLL remains active unless Doff is asserted, preserving timing predictability.
IDT71P71604S250BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.3 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
IDT71P71604S250BQ FAQ
1.How can I place an order for IDT71P71604S250BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71P71604S250BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71P71604S250BQ reliable?
The price and inventory of IDT71P71604S250BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P71604S250BQ is usually 5 days.
3.What payment methods are accepted for IDT71P71604S250BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P71604S250BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71P71604S250BQ?
IDT71P71604S250BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71P71604S250BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71P71604S250BQ?
For technical support, including IDT71P71604S250BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P71604S250BQ requirements.
6.How does Aetrix verify that IDT71P71604S250BQ is sourced from the original manufacturer or authorized distributors?
All IDT71P71604S250BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P71604S250BQ meets industry standards.
7.What is the process for return or replacement of IDT71P71604S250BQ?
All IDT71P71604S250BQ units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P71604S250BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71P71604S250BQ part is unused and in its original packaging.
Return procedure for IDT71P71604S250BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71P71604S250BQ Tags

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