Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Renesas IDT71P71604S250BQG

Part No.:
IDT71P71604S250BQG
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
AetrixIDT71P71604S250BQG.pdf
Description:
IC SRAM 18MBIT PAR 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,661

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IDT71P71604S250BQG from Integrated Device Technology is a 18 Mb (512K × 36-bit) pipelined DDR-II SRAM with double-data-rate burst-of-2 operation, 1.8 V core voltage (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible 165-ball fBGA package. It delivers 333 MHz clock rate support, dual echo clocks (CQ/CQ), and programmable output impedance for high-speed memory subsystems in networking switches and packet buffers.

For engineers reviewing the IDT71P71604S250BQG datasheet, IDT71P71604S250BQG pinout, IDT71P71604S250BQG application, or IDT71P71604S250BQG equivalent, key selection criteria include burst-of-2 DDR timing compliance, scalable 35–70 Ω output drive, JTAG boundary-scan capability, and 165-ball 13 mm × 15 mm fBGA mechanical compatibility with high-density PCB layouts.

Technical Context

The IDT71P71604S250BQG implements a synchronous DDR architecture with separate K/K (control/address/data capture) and C/C (data output/echo clock generation) clock domains. Its DLL aligns output data to C/C edges with sub-0.5 ns timing tolerance, enabling precise source-synchronous read capture at 333 MHz.

It supports byte write (BW0–BW3) and SA0-controlled burst ordering for x36 configuration, features automatic DQ tri-state control during idle reads, and uses ZQ-pin-based impedance calibration referenced to an external 250 Ω resistor for ±10% output drive matching across voltage/temperature.

Key Specifications

ParameterValue and Actual Design Meaning
Density & Organization18 Mb / 512K × 36-bit - provides wide data path for burst-oriented packet buffering without external width expansion
Max Clock Frequency333 MHz - enables 666 MT/s effective data rate on DQ bus using DDR burst-of-2 protocol
Core Supply VoltageVDD = 1.7–1.9 V - low-power 1.8 V nominal core compatible with advanced SoC power domains
I/O Supply VoltageVDDQ = 1.4–1.9 V - supports HSTL-15, 1.8 V TTL, or custom interface levels via scalable output drivers
Output Impedance Range35–70 Ω - adjustable via ZQ pin and external RQ resistor (175–350 Ω) to match PCB trace impedance
Package165-ball fBGA, 1.0 mm pitch, 13 mm × 15 mm - industry-standard footprint for high-pin-count memory placement
JTAG SupportIEEE 1149.1 compliant - enables boundary-scan testing and system-level debug without additional test access hardware

Pinout & Package

Package: 165-ball fine-pitch Ball Grid Array (fBGA), 1.0 mm pitch, 13 mm × 15 mm body size, RoHS-compliant.

Pin/TerminalCircuit RoleDesign Meaning
DQ[35:0]Data I/O (bidirectional)36-bit DDR data bus sampled on K/K rising edges (write) and aligned to C/C rising edges (read); auto-tri-stated when no valid read is active
BW0–BW3Byte Write Enable (active-low)Independent control of four 9-bit bytes per burst; sampled on both K and K edges to latch first/second word writes
SA0Burst Address BitSelects linear (0) or reversed (1) burst order for x36 mode; enables word-level addressing within burst window
K, KPrimary Input Clock PairEdge-triggered control/address/data capture clock; used for all input sampling and single-clock-mode output timing
C, COutput Clock PairSource-synchronous read clocks driving DQ and CQ outputs; deskew-capable for multi-device timing alignment
CQ, CQEcho Clock OutputsTightly correlated with DQ output edges (±0.25 ns hold/valid); free-running and always enabled for data-valid indication
ZQImpedance Calibration InputConnects to external 250 Ω resistor to ground to set nominal 50 Ω output drive; tied to VDDQ for minimum impedance mode
DoffDLL Disable InputActive-low signal disabling internal delay-locked loop; increases C→DQ propagation delay but simplifies timing closure in non-critical paths
TCK/TMS/TDI/TDOJTAG Test InterfaceFull IEEE 1149.1 boundary-scan chain supporting device-level interconnect test and debug

Key Features

FeatureDesign Value
DDR Burst-of-2 Data TransferDelivers two words per clock cycle on 36-bit bus - doubles effective bandwidth vs. SDR SRAMs at same clock frequency
Scalable Output Drive StrengthAdjustable 35–70 Ω output impedance via ZQ pin - eliminates need for external series termination resistors on matched-impedance traces
Dual Echo Clock ArchitectureCQ/CQ outputs phase-aligned to DQ transitions - enables reliable source-synchronous capture by memory controller without complex deskew logic
HSTL-15 Compatible Interface1.5 V VDDQ operation with VIH/VIL thresholds referenced to VREF = VDDQ/2 - ensures noise-immune signaling in high-speed backplane and switch fabric environments
Integrated DLL Timing AlignmentSub-0.5 ns C→DQ output skew correction - guarantees tight setup/hold windows for 333 MHz read operations without board-level tuning
Byte-Write Select GranularityFour independent BWx signals controlling 9-bit bytes - allows partial-word updates without read-modify-write cycles in packet header manipulation

Applications

Networking Switch BufferHigh-Speed Test Equipment Memory

Use Scenario: Storing ingress/egress packet descriptors and metadata in Layer 2/3 switching ASICs with real-time forwarding decisions.

IC Role / Device Role / Timing Role: Primary burst-access buffer interfacing directly to switch fabric controller via DDR source-synchronous interface.

Use Value: 512K × 36-bit organization matches typical packet descriptor width; burst-of-2 minimizes latency per lookup while sustaining >600 MB/s throughput.

Use Scenario: Capturing high-frequency digital waveform samples in automated test equipment with deterministic trigger-to-store timing.

IC Role / Device Role / Timing Role: High-bandwidth acquisition memory synchronized to precision clock generator and pattern generator.

Use Value: DLL-aligned CQ/DQ timing ensures sub-nanosecond sample timestamp accuracy; JTAG enables in-system verification of memory integrity.

Optical Transport Line CardRadar Signal Processing Buffer

Use Scenario: Holding forward error correction (FEC) encoded frames in OTN line cards before serialization onto 10G/40G optical links.

IC Role / Device Role / Timing Role: Frame-level buffering stage between FEC engine and SerDes PHY, operating under strict jitter tolerance requirements.

Use Value: HSTL-15 interface meets SONET/SDH jitter specs; scalable VDDQ supports 1.5 V or 1.8 V PHY voltage domains without level shifters.

Use Scenario: Temporary storage of digitized IF samples in phased-array radar receivers prior to FFT processing.

IC Role / Device Role / Timing Role: Low-latency circular buffer feeding DSP cores with continuous streaming data at >500 MB/s sustained rate.

Use Value: 333 MHz clock rate supports real-time sampling at 16-bit × 200 MSPS; burst-of-2 reduces controller arbitration overhead per sample block.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR-II SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress CY7C2663KV18Same 512K × 36 DDR-II architecture, identical 165-ball fBGA, but rated for industrial temperature (–40°C to +85°C) vs. commercial (0°C to +70°C)Required for extended-temperature base station or avionics deployments where ambient exceeds +70°CSelect CY7C2663KV18 when operating temperature range exceeds IDT71P71604S250BQG's 0°C to +70°C specification
Micron MT46V32M36P-5BDDR-II SDRAM (not SRAM), 32M × 36-bit, 2.5 V VDD, 133 MHz clock - asynchronous refresh, higher density but higher latency and lower bandwidth per MHzSuitable for cost-sensitive systems where deterministic latency is less critical than capacity, e.g., video frame bufferingChoose MT46V32M36P-5B only if application tolerates refresh overhead and longer access times; not drop-in compatible

Compared with CY7C2663KV18, IDT71P71604S250BQG offers tighter AC timing at 333 MHz but lacks extended temperature support; versus MT46V32M36P-5B, it delivers zero-refresh, deterministic sub-10 ns read latency essential for real-time packet processing.

Availability

IDT71P71604S250BQG is available at Aetrix Electronics and suitable for networking switch buffers, high-speed test equipment memory, optical transport line cards, and radar signal processing buffers requiring stable component supply and long-term production continuity.

Supply support for IDT71P71604S250BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

IDT71P71604S250BQG belongs to the QDR™II/DDR-II SRAM family developed jointly with Cypress and Micron to address bandwidth-constrained memory interfaces in packet-switched infrastructure and real-time signal acquisition systems.

FAQ

What is the maximum supported clock frequency for IDT71P71604S250BQG?

IDT71P71604S250BQG supports up to 333 MHz for K/K and C/C clocks, corresponding to a 666 MT/s effective data rate on its 36-bit DDR bus. This rating is validated under commercial temperature conditions (0°C to +70°C) with VDD = 1.8 V ± 100 mV and VDDQ = 1.5 V. The device maintains full timing compliance including tKHAX, tAVKH, and tCHQV parameters at this speed.

Does IDT71P71604S250BQG require external termination resistors?

IDT71P71604S250BQG does not require external series termination resistors due to its programmable output impedance. By connecting a 250 Ω resistor between ZQ and VSS, the device calibrates its DQ and CQ drivers to ~50 Ω output impedance, matching standard PCB trace impedances. This eliminates discrete termination components and reduces layout complexity.

How is burst ordering controlled in IDT71P71604S250BQG for x36 configuration?

In IDT71P71604S250BQG's 512K × 36-bit mode, burst ordering is controlled by the SA0 pin. When SA0 = 0, the burst proceeds linearly (word 0 → word 1); when SA0 = 1, the order reverses (word 1 → word 0). This allows flexible alignment of packet headers or control fields without software reordering, and is sampled synchronously with the K clock edge.

Can IDT71P71604S250BQG operate with only the K/K clock pair?

Yes, IDT71P71604S250BQG supports single-clock mode: tying C and C high disables their function, causing DQ outputs and CQ echo clocks to be driven solely by K/K timing. In this mode, data valid timing shifts to tKHQV/tKHQX specifications, and DLL alignment is bypassed - useful for simplified timing closure in non-critical paths or legacy controller interfaces.

What JTAG functionality does IDT71P71604S250BQG provide?

IDT71P71604S250BQG implements full IEEE 1149.1 JTAG boundary-scan with TCK, TMS, TDI, and TDO pins. It supports device identification (IDCODE), interconnect testing, and visibility into internal control signals - enabling in-system validation of solder joints and signal integrity on dense high-speed PCBs without physical probe access.

IDT71P71604S250BQG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, DDR II
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.3 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

IDT71P71604S250BQG FAQ

1.How can I place an order for IDT71P71604S250BQG through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71P71604S250BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71P71604S250BQG reliable?

The price and inventory of IDT71P71604S250BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P71604S250BQG is usually 5 days.

3.What payment methods are accepted for IDT71P71604S250BQG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P71604S250BQG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71P71604S250BQG?

IDT71P71604S250BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71P71604S250BQG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71P71604S250BQG?

For technical support, including IDT71P71604S250BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P71604S250BQG requirements.

6.How does Aetrix verify that IDT71P71604S250BQG is sourced from the original manufacturer or authorized distributors?

All IDT71P71604S250BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P71604S250BQG meets industry standards.

7.What is the process for return or replacement of IDT71P71604S250BQG?

All IDT71P71604S250BQG units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P71604S250BQG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71P71604S250BQG part is unused and in its original packaging.

Return procedure for IDT71P71604S250BQG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71P71604S250BQG Tags

  • IDT71P71604S250BQG
  • IDT71P71604S250BQG PDF
  • IDT71P71604S250BQG Datasheet
  • IDT71P71604S250BQG Specifications
  • IDT71P71604S250BQG Images
  • Renesas
  • Renesas IDT71P71604S250BQG
  • Buy IDT71P71604S250BQG
  • IDT71P71604S250BQG Price
  • IDT71P71604S250BQG Distributor
  • IDT71P71604S250BQG Supplier
  • IDT71P71604S250BQG Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER