Renesas IDT71P71804S250BQG
- Part No.:
- IDT71P71804S250BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
IDT71P71804S250BQG.pdf
- Description:
- IC SRAM 18MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71P71804 from Integrated Device Technology is a 18 Mb (1M × 18-bit) DDR II synchronous SRAM with double-data-rate burst-of-2 operation, 1.8 V core voltage (VDD), 1.5 V I/O supply (VDDQ), and HSTL-compatible 165-ball fBGA package. It delivers two data words per clock cycle via a bidirectional DDR data bus, supports scalable output impedance (35–70 Ω), and integrates dual echo clocks (CQ/CQ) for precise data capture in high-speed networking and packet buffering applications.
For engineers reviewing the IDT71P71804 datasheet, IDT71P71804 pinout, IDT71P71804 application, or IDT71P71804 equivalent, key selection considerations include its 1M×18 organization, burst-of-2 DDR timing, programmable ZQ impedance calibration, DLL-enabled tight CQ–DQ alignment, and compatibility with 1.4–1.9 V I/O voltage scaling for interfacing with 1.8 V systems.
Technical Context
The IDT71P71804 implements a pipelined DDR architecture with separate K/K input clocks for address/control/data capture and C/C clocks for DDR read data output and echo clock generation. Its internal DLL aligns DQ outputs to C/C edges with sub-0.5 ns jitter tolerance, enabling reliable 333 MHz operation (3.0 ns tKHKH).
It features multiplexed address inputs, SA0-controlled burst order reversal for x18 mode, byte-write capability (BW0/BW1), and JTAG support (TCK/TMS/TDI/TDO). The device uses HSTL I/O with independent VREF and VDDQ, allowing interface voltage tuning while maintaining 1.8 V core logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 18 Mb total, configured as 1,048,576 × 18 bits - provides compact wide-data storage for packet buffers and frame caches without depth expansion logic. |
| Core Voltage (VDD) | 1.8 V ±100 mV - enables low-power, high-speed CMOS core operation compatible with standard 1.8 V power rails. |
| I/O Supply (VDDQ) | 1.4 V to 1.9 V - supports HSTL-15 (1.5 V) operation and voltage scaling for interoperability with 1.8 V system interfaces. |
| Max Clock Frequency | 333 MHz (tKHKH = 3.0 ns) - sustains 666 MT/s effective data rate on DQ bus using DDR burst-of-2 transfers. |
| Output Impedance Range | 35 Ω to 70 Ω - adjustable via external ZQ resistor (175–350 Ω to VSS) for controlled-impedance PCB trace matching and signal integrity optimization. |
| Package | 165-ball fine-pitch BGA (13 mm × 15 mm, 1.0 mm pitch) - supports high-density routing and thermal performance required in telecom line cards and switch fabric modules. |
| Temperature Range | Commercial grade: 0 °C to +70 °C ambient - validated for use in enterprise networking equipment and industrial control backplanes. |
Pinout & Package
Package: 165-ball fBGA (13 mm × 15 mm, 1.0 mm pitch), RoHS-compliant, moisture sensitivity level (MSL) 3.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Data I/O (bidirectional) | Synchronous DDR data bus; samples input on K/K rising edges during writes, drives aligned to C/C rising edges during reads; supports 2-word burst per access. |
| BW0, BW1 | Byte Write Enable (active low) | Selects which 9-bit byte (DQ[8:0] or DQ[17:9]) is written during each half of the burst; enables partial-word updates without read-modify-write overhead. |
| SA[18:0], SA0 | Address / Burst Control | SA[18:0] latches row/column address on K rising edge; SA0 controls linear vs. reversed burst order (a,b → 0,1 or 1,0) in x18 mode. |
| K, K | Primary Input Clock Pair | Edge-triggered clocks for latching address, R/W, LD, BW, and first/second burst data; also drive outputs when C/C are disabled (single-clock mode). |
| C, C | Output Clock Pair | Used to clock read data out of output register; generate tightly aligned echo clocks (CQ/CQ); may be disabled by tying high to revert to K/K timing. |
| CQ, CQ | Output Echo Clocks | Rising/falling edges precisely track DQ valid windows; provide board-level deskew reference for memory controller sampling; always active, never tri-stated. |
| ZQ | Impedance Calibration Input | Connects to external resistor (175–350 Ω) to ground to set DQ/CQ output drive strength; auto-calibrates every 1024 clocks for PVT drift compensation. |
| VDDQ, VREF | I/O Power & Reference | VDDQ powers output drivers and receivers; VREF sets HSTL threshold at VDDQ/2 - allows independent I/O voltage scaling without affecting core logic. |
Key Features
| Feature | Design Value |
|---|---|
| DDR Burst-of-2 Data Bus | Delivers two 18-bit words per clock cycle (36 bits/cycle), doubling bandwidth over single-data-rate SRAMs without increasing clock frequency or pin count. |
| Programmable Output Impedance | Adjustable 35–70 Ω drive strength via ZQ pin enables optimal signal integrity across varied PCB stackups and trace lengths without redesigning termination networks. |
| DLL-Synchronized Echo Clocks | Internal delay-locked loop aligns CQ/CQ edges to DQ transitions within ±0.25 ns, eliminating setup/hold uncertainty for high-speed controller sampling. |
| HSTL Interface Scalability | Supports 1.4–1.9 V VDDQ and accepts input levels referenced to VREF = VDDQ/2 - simplifies integration into mixed-voltage 1.8 V systems without level shifters. |
| JTAG Boundary Scan Support | Integrated TAP controller (TCK/TMS/TDI/TDO) enables IEEE 1149.1-compliant testing and debug of interconnects in dense BGA layouts. |
Applications
| Packet Buffering | Switch Fabric Interface |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet or SONET frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer providing 666 MT/s DDR throughput to match line-rate traffic without head-of-line blocking. Use Value: 1M×18 organization matches common 16-bit+parity or 18-bit CRC-aligned packet metadata widths, minimizing wasted capacity and reducing external address decoding. |
Use Scenario: Interfacing between network processor and crossbar switch in modular routers requiring deterministic latency and burst coalescing. IC Role / Device Role / Timing Role: Synchronous burst buffer with DLL-aligned CQ clocks ensures precise timing closure between ASIC and memory under 333 MHz operation. Use Value: Programmable ZQ impedance eliminates need for discrete series resistors on 18-bit DQ bus, saving PCB area and improving signal fidelity at >200 MHz. |
| Baseband Processing | Industrial Video Frame Store |
|
Use Scenario: Temporary storage of OFDM symbols or channel estimation data in LTE/5G small-cell baseband units. IC Role / Device Role / Timing Role: Wide-data SRAM supporting parallel 18-bit complex sample access with burst-of-2 efficiency to feed multi-lane FFT engines. Use Value: SA0-controlled burst reversal allows flexible addressing of interleaved I/Q data streams without software overhead or external address manipulation logic. |
Use Scenario: Capturing and buffering uncompressed HD video frames (e.g., 1280×720@60fps) in machine vision controllers before compression or analysis. IC Role / Device Role / Timing Role: Low-latency, high-throughput frame buffer with HSTL I/O tolerating 1.8 V system rails and 70 °C ambient operation. Use Value: 165-ball fBGA package enables compact placement near FPGA video processors, while VDDQ scalability avoids dedicated 1.5 V LDOs in cost-sensitive designs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1551KV18 | Same 1M×18 DDR II architecture, 333 MHz max, 165-ball fBGA, but uses 1.5 V only VDDQ (no 1.4–1.9 V scaling) and lacks ZQ calibration. | Requires fixed 1.5 V I/O rail; less flexible for 1.8 V system integration; no dynamic impedance tuning for varying trace loads. | Choose when strict 1.5 V HSTL-15 compliance is required and board layout has uniform trace impedance. |
| Micron MT46V16M18 | 18 Mb DDR II SRAM (1M×18), 333 MHz, but packaged in 165-ball FBGA with different pinout (non-pin-compatible); supports VDDQ = 1.4–1.9 V but no ZQ pin. | Requires PCB redesign due to incompatible pin mapping; no hardware-based output impedance adjustment - relies on external termination. | Consider only if migrating from legacy Micron design; verify full signal routing and timing margin re-analysis. |
Compared with CY7C1551KV18 and MT46V16M18, the IDT71P71804 uniquely combines VDDQ voltage scalability, on-die ZQ impedance calibration, and SA0 burst-order control - delivering superior signal integrity adaptability and architectural flexibility for next-generation networking and embedded video systems.
Availability
IDT71P71804 is available at Aetrix Electronics and suitable for packet buffering, switch fabric interface, baseband processing, and industrial video frame store applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for IDT71P71804 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing markets.
The IDT71P71804 belongs to IDT's DDR II SRAM product line, designed specifically for high-bandwidth, low-latency data buffering in networking infrastructure, telecom equipment, and real-time embedded systems demanding deterministic timing and scalable I/O voltage operation.
FAQ
What is the maximum operating frequency of the IDT71P71804?
The IDT71P71804 supports a maximum average clock cycle time (tKHKH) of 3.00 ns, corresponding to 333 MHz operation. This enables a sustained 666 MT/s effective data rate on its DDR data bus. Performance is specified across commercial temperature (0 °C to +70 °C) and VDD/VDDQ voltage ranges, with timing parameters validated at 333 MHz, 300 MHz, 250 MHz, 200 MHz, and 167 MHz.
Does the IDT71P71804 support single-clock mode operation?
Yes, the IDT71P71804 supports single-clock mode. When the C and C input clocks are tied high, the K and K clocks assume full timing responsibility - controlling address/control latching, data input sampling, output registration, and echo clock generation. This simplifies system clock distribution in designs where separate C/C routing is impractical.
How does the ZQ pin function in the IDT71P71804?
The ZQ pin on the IDT71P71804 connects to an external resistor (175–350 Ω) to VSS to calibrate output driver impedance. The device sets DQ and CQ output impedance to 0.2 × RQ (e.g., 50 Ω for RQ = 250 Ω) and auto-recalibrates every 1024 clock cycles to compensate for voltage and temperature drift - ensuring consistent signal integrity without manual tuning.
What is the role of the SA0 pin in the IDT71P71804?
In the IDT71P71804 (1M×18 configuration), the SA0 pin controls burst order during read/write operations. When SA0 = 0, the burst sequence is linear (word 0 → word 1); when SA0 = 1, it reverses (word 1 → word 0). This enables flexible data streaming for applications like interleaved I/Q processing without requiring external address manipulation logic.
Is JTAG support available on the IDT71P71804?
Yes, the IDT71P71804 includes full IEEE 1149.1 JTAG boundary scan support via dedicated TCK, TMS, TDI, and TDO pins. This enables automated test pattern generation, interconnect verification, and in-system debugging - critical for validating high-density BGA routing in telecom and networking PCB assemblies.
IDT71P71804S250BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, DDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.3 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
IDT71P71804S250BQG FAQ
1.How can I place an order for IDT71P71804S250BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71P71804S250BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71P71804S250BQG reliable?
The price and inventory of IDT71P71804S250BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P71804S250BQG is usually 5 days.
3.What payment methods are accepted for IDT71P71804S250BQG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P71804S250BQG transactions.
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4.How is shipping managed for IDT71P71804S250BQG?
IDT71P71804S250BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71P71804S250BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71P71804S250BQG?
For technical support, including IDT71P71804S250BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P71804S250BQG requirements.
6.How does Aetrix verify that IDT71P71804S250BQG is sourced from the original manufacturer or authorized distributors?
All IDT71P71804S250BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P71804S250BQG meets industry standards.
7.What is the process for return or replacement of IDT71P71804S250BQG?
All IDT71P71804S250BQG units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P71804S250BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71P71804S250BQG part is unused and in its original packaging.
Return procedure for IDT71P71804S250BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71P71804S250BQG Tags

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M24C02-WMN6TP
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