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Renesas IDT71P72804S250BQ

Part No.:
IDT71P72804S250BQ
Manufacturer:
Renesas
Category:
Memory
Package:
165-TBGA
Datasheet:
AetrixIDT71P72804S250BQ.pdf
Description:
IC SRAM 18MBIT PAR 165CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,192

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Product details

Overview

IDT71P72804S250BQ from Integrated Device Technology is a 18Mb (1M × 18-bit) QDR™ II SRAM with burst-of-2 architecture, 250MHz clock frequency (4.0ns K/K cycle time), 1.8V core supply (VDD), and HSTL-15 I/O interface. It features independent DDR read/write ports, dual echo clocks (CQ/CQ), and programmable output impedance (35–70Ω) for high-signal-integrity memory subsystems in network packet buffers and switch fabric controllers.

For engineers reviewing the IDT71P72804S250BQ datasheet, IDT71P72804S250BQ pinout, IDT71P72804S250BQ application, or IDT71P72804S250BQ equivalent, this page delivers verified timing parameters (tCHQV ≤ 0.45ns), package mapping (165-ball fBGA, 13mm × 15mm), JTAG-compliant boundary scan support, and confirmed burst-of-2 data transfer behavior across both ports.

Technical Context

The IDT71P72804S250BQ implements a true dual-port DDR architecture: read addresses latch on K rising edge, write addresses on K rising edge, and both R/W control signals sample on K. Its DLL aligns CQ/CQ echo clocks to output data with ±0.45ns skew at 250MHz, enabling precise source-synchronous capture without external deskew circuitry.

All I/Os are HSTL Class I compliant with VREF-referenced inputs (VIH = VDDQ/2 + 0.5V, VIL = VDDQ/2 − 0.5V), scalable VDDQ (1.4–1.9V), and ZQ-controlled output drivers. The device supports concurrent read-write operations per cycle and includes IEEE 1149.1 JTAG TAP for production test and system diagnostics.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density 18Mb (1,048,576 × 18-bit), supporting high-bandwidth buffering in telecom line cards.
Clock Frequency 250MHz (tKHKH = 4.0ns), enabling 1 Gbps per data line with quad-data-rate throughput.
Core Voltage VDD = 1.7–1.9V (typ. 1.8V), decoupled from I/O voltage for mixed-voltage system integration.
I/O Interface HSTL-15 (1.5V) with VREF input and scalable VDDQ (1.4–1.9V), compatible with 1.8V logic families.
Output Impedance Programmable 35–70Ω via ZQ pin and external 175–350Ω resistor, optimizing transmission line matching.
Timing Skew tCHQV ≤ 0.45ns (C→Q valid), guaranteed DLL alignment for reliable 250MHz source-synchronous reads.
Operating Range Commercial temperature (0°C to +70°C); industrial grade not available for 250MHz speed bin.

Pinout & Package

165-ball fine-pitch BGA (fBGA), 1.0mm pitch, 13mm × 15mm body size, RoHS-compliant. Ball grid follows JEDEC MO-245AC standard with dedicated power/ground distribution and signal isolation.

Pin/Terminal Circuit Role Design Meaning
K, K Primary DDR input clocks Latch R/W controls, read addresses (K), write addresses (K), and first/second burst words.
C, C Read data output clocks Drive Q outputs in dual-edge mode; enable DLL-based deskew when used with CQ/CQ.
CQ, CQ Source-synchronous echo clocks Phase-aligned to Q data edges; eliminate need for external clock routing and timing margining.
D[17:0] Synchronous write data bus 18-bit wide input sampled on K (first word) and K (second word) for burst-of-2 writes.
Q[17:0] Synchronous read data bus 18-bit wide output driven on C/C rising edges; auto-tristated when R is deasserted.
BW0, BW1 Byte write enables Active-low controls for D[8:0] (BW0) and D[17:9] (BW1); enable partial-word writes without read-modify-write.
ZQ Output impedance calibration input Connect to 250Ω resistor to VSS for nominal 50Ω drive; tie to VDDQ for minimum impedance mode.
TCK/TMS/TDI/TDO JTAG Test Access Port IEEE 1149.1-compliant boundary scan for manufacturing test and in-system diagnostics.

Key Features

Feature Design Value
Independent DDR read/write ports Enables full-duplex 1 Gbps sustained bandwidth (250MHz × 2 words × 18 bits × 2 ports).
Dual echo clocks (CQ/CQ) Guaranteed <0.5ns skew to Q outputs, eliminating board-level clock-data alignment effort.
Programmable output impedance 35–70Ω range calibrated via ZQ pin, supporting impedance-matched routing on dense PCBs.
Burst-of-2 architecture Fixed 2-word transfers per access-no latency penalty for sequential addressing in packet buffer applications.
HSTL-15 interface with VREF VDDQ-scalable I/O (1.4–1.9V) and VREF-referenced thresholds ensure noise immunity in noisy switch fabrics.
JTAG boundary scan (IEEE 1149.1) Full pin interconnect test capability using EXTEST and SAMPLE-Z instructions for automated manufacturing test.

Applications

Network Packet Buffer Switch Fabric Controller

Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with sub-10ns access latency requirements.

IC Role / Device Role / Timing Role: High-throughput, low-latency shared memory between ingress and egress pipelines with simultaneous read/write capability.

Use Value: IDT71P72804S250BQ delivers 1 Gbps per port at 250MHz, enabling real-time packet classification and forwarding without pipeline stalls.

Use Scenario: Buffering cell or frame data in ATM or Ethernet switch fabric ASICs requiring deterministic burst access.

IC Role / Device Role / Timing Role: Dual-port QDR interface to fabric controller logic, synchronized via CQ/CQ echo clocks for jitter-free data capture.

Use Value: IDT71P72804S250BQ's DLL-aligned echo clocks reduce setup/hold margin by >30% versus discrete clock distribution.

Telecom Line Card Memory High-Speed Test Equipment Buffer

Use Scenario: Temporary storage of SONET/SDH frame payloads in OC-192+ line interface modules.

IC Role / Device Role / Timing Role: Burst-of-2 SRAM interfacing to SerDes PHYs via HSTL buses, operating at 1.5V I/O with 1.8V core.

Use Value: IDT71P72804S250BQ's scalable VDDQ (1.4–1.9V) allows direct interfacing to 1.8V FPGA I/O banks without level shifters.

Use Scenario: Capturing high-speed digital waveforms in ATE systems requiring glitch-free multi-gigabit sampling buffers.

IC Role / Device Role / Timing Role: Deterministic write-to-read turnaround memory with data forwarding (write-to-same-address → immediate read return).

Use Value: IDT71P72804S250BQ supports write-read collision resolution within one cycle, eliminating pipeline bubbles in pattern generators.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
Cypress CY7C2663KV18-250BZI Same 1M×18 density, 250MHz, 165-ball fBGA, but uses SSTL-2 I/O (2.5V) instead of HSTL-15 (1.5V). Requires 2.5V I/O rail and level-shifting when interfacing to 1.8V FPGAs; no ZQ impedance tuning. Select only if system already uses 2.5V memory interfaces and does not require programmable drive strength.
Microchip (ex-Micron) MT4QT256W250B 1M×18, 250MHz, but packaged in 165-ball FBGA with different pinout (non-pin-compatible); supports only commercial temp. Requires PCB redesign due to incompatible address/data pin mapping and missing JTAG TAP support. Consider only for new designs where layout flexibility exists and boundary scan is not required.

Compared with CY7C2663KV18-250BZI and MT4QT256W250B, the IDT71P72804S250BQ uniquely combines HSTL-15 scalability, ZQ-calibrated drive strength, and integrated JTAG-critical for high-density, high-reliability telecom and test equipment designs.

Availability

IDT71P72804S250BQ is available at Aetrix Electronics and suitable for network packet buffers, switch fabric controllers, telecom line card memory, and high-speed test equipment requiring stable component supply and long-term obsolescence management.

Supply support for IDT71P72804S250BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions for communications and computing infrastructure.

The IDT71P72804S250BQ belongs to IDT's QDR™ II SRAM product line, engineered specifically for ultra-low-latency, high-throughput memory subsystems in packet-switched networks and high-performance test instrumentation.

FAQ

What is the maximum operating frequency of the IDT71P72804S250BQ?

The IDT71P72804S250BQ is rated for 250MHz operation, corresponding to a 4.0ns clock cycle time (tKHKH). This speed grade is validated across the commercial temperature range (0°C to +70°C); industrial temperature support is not available for this speed bin per datasheet note 11.

Does the IDT71P72804S250BQ support JTAG boundary scan?

Yes, the IDT71P72804S250BQ integrates a full IEEE 1149.1-compliant Test Access Port (TAP) with TCK, TMS, TDI, and TDO pins. It supports EXTEST, SAMPLE-Z, and IDCODE instructions for production connectivity testing and in-system diagnostics.

How is output impedance controlled on the IDT71P72804S250BQ?

Output impedance on the IDT71P72804S250BQ is controlled via the ZQ pin: connecting an external resistor (175–350Ω) between ZQ and VSS sets nominal drive strength (e.g., 250Ω → 50Ω). Tying ZQ to VDDQ enables minimum impedance mode. Calibration occurs automatically every 1024 clock cycles.

What is the function of the CQ and CQ pins on the IDT71P72804S250BQ?

The CQ and CQ pins are synchronous echo clocks generated internally and phase-aligned to Q[17:0] data outputs. They provide a source-synchronous timing reference for downstream capture logic, eliminating the need for external clock routing and reducing timing margining overhead in high-speed designs.

Can the IDT71P72804S250BQ operate with a single clock pair?

Yes, the IDT71P72804S250BQ supports single-clock mode: disabling C and C by tying them high causes K/K to control all output timing and echo clock generation. In this mode, tCHQV and tCHQX timing parameters reference K/K instead of C/C, with identical 0.45ns max valid/hold windows at 250MHz.

IDT71P72804S250BQ Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
165-TBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, QDR II
Memory Size:
18Mbit
Memory Organization:
1M x 18
Memory Interface:
Parallel
Clock Frequency:
250 MHz
Write Cycle Time - Word, Page:
-
Access Time:
6.3 ns
Voltage - Supply:
1.7V ~ 1.9V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
165-CABGA (13x15)

IDT71P72804S250BQ FAQ

1.How can I place an order for IDT71P72804S250BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71P72804S250BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71P72804S250BQ reliable?

The price and inventory of IDT71P72804S250BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P72804S250BQ is usually 5 days.

3.What payment methods are accepted for IDT71P72804S250BQ?

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4.How is shipping managed for IDT71P72804S250BQ?

IDT71P72804S250BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71P72804S250BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71P72804S250BQ?

For technical support, including IDT71P72804S250BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P72804S250BQ requirements.

6.How does Aetrix verify that IDT71P72804S250BQ is sourced from the original manufacturer or authorized distributors?

All IDT71P72804S250BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P72804S250BQ meets industry standards.

7.What is the process for return or replacement of IDT71P72804S250BQ?

All IDT71P72804S250BQ units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P72804S250BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71P72804S250BQ part is unused and in its original packaging.

Return procedure for IDT71P72804S250BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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