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Renesas IDT71P72804S250BQG
- Part No.:
- IDT71P72804S250BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
IDT71P72804S250BQG.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,475
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Product details
Overview
IDT71P72804S250BQG from Integrated Device Technology is a 18Mb (1M × 18-bit) QDR™II SRAM with burst-of-2 architecture, 250MHz clock frequency, 1.8V core voltage (VDD), and 1.5V I/O supply (VDDQ). It features independent DDR read/write ports, dual echo clocks (CQ/CQ), and HSTL-15-compatible interfaces. This device enables full-bandwidth concurrent read/write in high-speed networking buffers and packet memory applications.
For engineers reviewing the IDT71P72804S250BQG datasheet, IDT71P72804S250BQG pinout, IDT71P72804S250BQG application, or IDT71P72804S250BQG equivalent, key selection criteria include its 250MHz K/K clock timing (tKHKH = 4.0 ns), scalable 35–70Ω output impedance via ZQ pin, JTAG 1149.1 compliance, and 165-ball 1.0mm-pitch fBGA package - all critical for deterministic latency in telecom switching fabric designs.
Technical Context
The IDT71P72804S250BQG implements a true pipelined QDR II architecture with separate DDR address bus (multiplexed read/write addresses latched on K and K rising edges) and unidirectional DDR data buses. Its DLL aligns CQ/CQ echo clocks to output data with ±0.30 ns skew at 250MHz, enabling precise downstream capture without external deskew circuitry.
It supports simultaneous read and write operations per clock cycle via independent R/W control logic, byte-write masking (BW0/BW1), and automatic output enable/disable based on read port activity. The device uses HSTL Class I inputs (VIH = VDDQ/2 + 0.5V, VIL = VDDQ/2 − 0.5V) and programmable output drive strength calibrated via external 250Ω ZQ resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 18Mb / 1M × 18-bit - provides 18-bit wide data path optimized for 16-bit+ bus systems with parity or ECC extension |
| Clock Frequency | 250MHz (tKHKH = 4.0 ns) - enables 1 Gbps per data line throughput with quad-data-rate operation |
| Core Supply | VDD = 1.7–1.9V - low-voltage core reduces dynamic power in high-frequency operation |
| I/O Supply | VDDQ = 1.4–1.9V - supports HSTL-15 (1.5V) or scaled 1.8V TTL interface compatibility |
| Output Impedance | 35–70Ω adjustable via ZQ pin - matches PCB trace impedance to minimize reflections at >400 Mbps DDR rates |
| Timing Reference | CQ/CQ echo clocks aligned to Q outputs within ±0.30 ns - eliminates need for external clock forwarding or phase alignment |
| JTAG Support | IEEE 1149.1 compliant TAP with EXTEST, IDCODE, SAMPLE-Z - enables boundary-scan testability in dense BGA layouts |
Pinout & Package
165-ball fine-pitch Ball Grid Array (fBGA), 13 mm × 15 mm body, 1.0 mm ball pitch, RoHS-compliant. Package supports high-density routing with dedicated power/ground balls distributed across array for signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D[17:0] | Data Input Bus | 18-bit synchronous input sampled on K (first word) and K (second word) rising edges during write bursts |
| Q[17:0] | Data Output Bus | 18-bit synchronous output driven on C/C rising edges; automatically tri-stated when R is deasserted |
| K, K | Primary Input Clocks | Rising edges latch R/W controls, SA addresses, and D inputs; also drive outputs if C/C disabled (single-clock mode) |
| C, C | Read Output Clocks | Control Q output timing and generate CQ/CQ echo clocks; DLL-aligned to Q data for tight skew control |
| CQ, CQ | Echo Clock Outputs | Phase-matched to Q data outputs; used directly by memory controller for reliable data capture without additional clock routing |
| SA[17:0] | Multiplexed Address Bus | 18-bit bus: read addresses latched on K↑, write addresses latched on K↑ - enables same-cycle R/W arbitration |
| BW0, BW1 | Byte Write Enables | Active-low signals controlling D[8:0] (BW0) and D[17:9] (BW1); sampled on both K↑ and K↑ for burst-word granularity |
| ZQ | Impedance Calibration Input | Connect to 250Ω resistor to VSS to set nominal 50Ω output drive; tie to VDDQ for minimum impedance mode |
| VDD, VDDQ, VSS, VREF | Power & Reference | VDD = 1.8V core; VDDQ = 1.5V I/O; VREF = VDDQ/2 reference for HSTL thresholds; multiple VSS/VDDQ balls reduce noise |
| TCK, TMS, TDI, TDO | JTAG Test Interface | IEEE 1149.1 boundary-scan support; internal pull-ups on TMS/TDI eliminate need for external resistors |
Key Features
| Feature | Design Value |
|---|---|
| Independent DDR Read/Write Ports | Enables full-duplex memory access - no bus turnaround delay or direction control logic required in controller design |
| Dual Echo Clocks (CQ/CQ) | Guarantees <0.5 ns data-to-clock alignment at 250MHz, eliminating setup/hold uncertainty in high-speed capture |
| Programmable Output Impedance | 35–70Ω range calibrated via single ZQ resistor - adapts drive strength to varying PCB trace lengths and loads |
| Burst-of-2 Data Transfer | Two sequential words per access on each port - delivers four total words per clock cycle (quad-data-rate) without interleaving overhead |
| HSTL-15 Compatible Interface | 1.5V VDDQ operation with VIH/VIL centered at VDDQ/2 ±0.5V - ensures noise margin >350 mV at 250MHz |
| JTAG 1149.1 Boundary Scan | Full interconnect test coverage for 165-ball fBGA - validates solder joints and routing integrity in production test |
Applications
| High-Speed Network Switching Fabric | Telecom Line Card Packet Buffer |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in multi-gigabit switch ASICs with strict latency budgets. IC Role / Device Role / Timing Role: Primary packet memory buffer interfacing directly to switch fabric controller via 18-bit QDR II bus; provides deterministic 4-cycle read/write latency. Use Value: Concurrent R/W eliminates arbitration stalls, enabling 100% utilization of 250MHz clock for 1.8 Gbps sustained bandwidth per port. |
Use Scenario: Temporary storage of ATM cells or VoIP voice frames in carrier-grade DSLAM or OLT line cards operating at -40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-temperature QDR II SRAM serving as ingress/egress FIFO for traffic shaping engines; synchronized to controller's K/K clocks. Use Value: Scalable output impedance maintains signal integrity across temperature extremes, reducing bit error rate in long backplane traces. |
| Baseband Processing Memory in 4G/LTE Radio Units | Test Equipment High-Speed Pattern Memory |
Use Scenario: Holding channel estimation coefficients and FFT intermediate results in LTE eNodeB baseband processors requiring low-latency random access. IC Role / Device Role / Timing Role: Burst-of-2 SRAM providing parallel coefficient read and updated write paths to dual-DSP subsystems. Use Value: Independent R/W ports allow real-time coefficient updates without interrupting ongoing demodulation reads - critical for sub-100ns timing closure. |
Use Scenario: Storing stimulus/response vectors in automated test equipment (ATE) pattern generators running at 500 MT/s effective data rate. IC Role / Device Role / Timing Role: Deterministic-latency memory delivering synchronized 250MHz bursts to high-speed DAC/ADC interfaces. Use Value: DLL-aligned CQ/CQ echo clocks enable direct sampling of Q outputs by ATE timing subsystem - removes jitter-induced timing margin loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar QDR II SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C2663KV18-250BZI | Same 1M×18 organization, 250MHz speed, 165-ball fBGA; identical tKHKH=4.0ns but higher IDD (950mA vs 850mA at 250MHz) | Industrial temp range only (−40°C to +85°C); lacks JTAG boundary scan | Select when JTAG testability is not required and industrial temp operation is mandatory |
| IDT71P72802S250BQG | Same family, lower density (9Mb/512K×18); identical pinout, timing, and electrical specs except reduced capacity | Lower cost and power (IDD = 650mA at 250MHz); suitable where 9Mb suffices | Select for cost-sensitive designs with ≤9Mb memory requirement and identical timing constraints |
Compared with CY7C2663KV18-250BZI, IDT71P72804S250BQG offers integrated JTAG testability and lower active current; compared with IDT71P72802S250BQG, it doubles memory depth while maintaining identical timing, layout, and thermal profile - enabling seamless scalability without redesign.
Availability
IDT71P72804S250BQG is available at Aetrix Electronics and suitable for high-speed network switching fabric, telecom line card packet buffering, and baseband processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature grade availability.
Supply support for IDT71P72804S250BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.
IDT71P72804S250BQG belongs to the QDR™II SRAM product line, engineered specifically for deterministic-latency, full-duplex memory access in packet-switched networking equipment and telecom base stations.
FAQ
What is the maximum operating frequency of the IDT71P72804S250BQG?
The IDT71P72804S250BQG is rated for 250MHz operation, with a minimum clock cycle time (tKHKH) of 4.0 ns. This applies to both K/K and C/C clock pairs under commercial temperature conditions (0°C to +70°C); the 250MHz speed grade is not offered in industrial temperature range.
Does the IDT71P72804S250BQG support JTAG boundary-scan testing?
Yes, the IDT71P72804S250BQG integrates a fully compliant IEEE 1149.1 Test Access Port (TAP) with EXTEST, IDCODE, and SAMPLE-Z instructions. Pins TCK, TMS, TDI, and TDO are assigned per standard, and internal pull-ups on TMS/TDI simplify board design.
How is output impedance controlled on the IDT71P72804S250BQG?
Output impedance is calibrated using the ZQ pin: connect an external 250Ω resistor from ZQ to VSS for nominal 50Ω drive, or tie ZQ to VDDQ for minimum impedance mode. The device adjusts drive strength every 1024 clock cycles to compensate for voltage and temperature drift.
What is the function of the CQ and CQ pins on the IDT71P72804S250BQG?
CQ and CQ are synchronous echo clock outputs tightly aligned to Q[17:0] data transitions. Their rising/falling edges correspond precisely to data validity windows, allowing memory controllers to use them directly for capturing Q outputs - eliminating timing uncertainty from clock/data flight-time mismatches.
Can the IDT71P72804S250BQG operate with only the K and K clocks?
Yes, the IDT71P72804S250BQG supports single-clock mode: disable C and C by tying them high, causing K/K to control both input latching and output timing. In this mode, CQ/CQ are generated from K/K, and DLL alignment shifts from C/C to K/K references.
IDT71P72804S250BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, QDR II
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.3 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
IDT71P72804S250BQG FAQ
1.How can I place an order for IDT71P72804S250BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71P72804S250BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71P72804S250BQG reliable?
The price and inventory of IDT71P72804S250BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P72804S250BQG is usually 5 days.
3.What payment methods are accepted for IDT71P72804S250BQG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P72804S250BQG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71P72804S250BQG?
IDT71P72804S250BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71P72804S250BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71P72804S250BQG?
For technical support, including IDT71P72804S250BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P72804S250BQG requirements.
6.How does Aetrix verify that IDT71P72804S250BQG is sourced from the original manufacturer or authorized distributors?
All IDT71P72804S250BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P72804S250BQG meets industry standards.
7.What is the process for return or replacement of IDT71P72804S250BQG?
All IDT71P72804S250BQG units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P72804S250BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71P72804S250BQG part is unused and in its original packaging.
Return procedure for IDT71P72804S250BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71P72804S250BQG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
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Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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