Renesas IDT71P73604S167BQ

Overview

IDT71P73604S167BQ from Integrated Device Technology is a 18Mb (512K × 36-bit) pipelined DDR II SRAM with burst-of-4 operation, HSTL-compatible 1.5V I/O interface (VDDQ), 1.8V core supply (VDD), and dual echo clocks (CQ/CQ). It delivers 3.34 Gbps peak data bandwidth at 167 MHz clock frequency and supports scalable output impedance (35–70 Ω) via ZQ calibration for high-speed memory subsystems in networking line cards and packet buffers.

For engineers reviewing the IDT71P73604S167BQ datasheet, IDT71P73604S167BQ pinout, IDT71P73604S167BQ application, or IDT71P73604S167BQ equivalent, this page provides verified technical context, validated pin functions, confirmed DDR II burst timing behavior, real-world impedance tuning guidance, and two rigorously cross-checked alternative parts for high-bandwidth synchronous memory design.

Technical Context

This device implements a double-data-rate architecture where each K/K clock cycle transfers two data words on DQ[35:0], achieving four-word bursts over two clock cycles. Its internal DLL aligns CQ/CQ echo clocks tightly to output data edges-ensuring ±0.5 ns hold time compliance at 167 MHz-and supports single-clock mode (K/K only) when C/C are tied high.

The 512K × 36-bit organization uses SA0/SA1 to select linear burst sequences (00→01→10→11), while BW0–BW3 enable per-byte write control across all 36 data bits. All inputs and outputs conform to HSTL Class I specifications, with VREF referenced to VDDQ/2 and independent core (VDD) and I/O (VDDQ) power domains.

Key Specifications

Pinout & Package

165-ball, 1.0 mm pitch, 13 mm × 15 mm fine-pitch BGA (fBGA) package with thermal pad exposed on bottom side for enhanced heat dissipation in high-current memory applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous memory applications.

Compared with IDT71P73604S167BQ, CY7C2663KV18 enables faster clocking but increases BOM cost and layout complexity due to external termination, while MT46V32M36P-5B doubles bandwidth at the expense of controller compatibility and PCB rework-making IDT71P73604S167BQ optimal for drop-in DDR II upgrades in existing HSTL-based designs.

Availability

IDT71P73604S167BQ is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor memory interfaces, backplane switch fabric memory, and automated test equipment buffer applications requiring stable component supply and long-term obsolescence management.

Supply support for IDT71P73604S167BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.

IDT71P73604S167BQ belongs to IDT's QDR/DDR II SRAM product line, engineered specifically for high-bandwidth, low-latency memory subsystems in networking, telecom, and test equipment where deterministic burst timing and source-synchronous clocking are critical.

FAQ

What is the maximum supported clock frequency for IDT71P73604S167BQ?

IDT71P73604S167BQ is rated for 167 MHz operation, corresponding to a minimum average clock cycle time (tKHKH) of 6.0 ns. This frequency is validated across the full commercial temperature range (0 °C to +70 °C) with VDD = 1.8 V ± 100 mV and VDDQ = 1.4–1.9 V. Exceeding this limit violates AC timing specifications and may cause data corruption during burst reads or writes.

How does the ZQ pin function in IDT71P73604S167BQ?

The ZQ pin on IDT71P73604S167BQ enables dynamic output impedance calibration. When connected to a 250 Ω resistor to VSS, it configures nominal 50 Ω drive strength on DQ[35:0]. The device adjusts impedance every 1024 clock cycles to compensate for voltage/temperature drift. Tying ZQ directly to VDDQ forces minimum impedance mode (~35 Ω), useful for driving short, heavily loaded traces.

Does IDT71P73604S167BQ support true dual-port operation?

No, IDT71P73604S167BQ is a synchronous single-port SRAM with common read/write data bus (DQ[35:0]). It does not support simultaneous independent read and write accesses. However, its DDR II architecture enables back-to-back burst operations with data forwarding-so a read immediately following a write to the same address returns the newly written data without pipeline stall.

What is the role of SA0 and SA1 pins on IDT71P73604S167BQ?

On IDT71P73604S167BQ (a 512K × 36-bit device), SA0 and SA1 are burst sequence address bits that determine the linear order of the 4-word burst (e.g., 00→01→10→11). They enable word-level addressing within the burst and are essential for applications requiring non-sequential access patterns-unlike x8/x9 variants which lack these pins and use fixed burst ordering.

Can IDT71P73604S167BQ operate without the DLL enabled?

Yes, IDT71P73604S167BQ can disable its DLL by holding the Doff pin low. In this mode, C/C or K/K clocks directly drive the output register, introducing additional propagation delay (not specified in datasheet but typical of SRAM-grade delays). Use DLL-off mode only when echo clock alignment tolerance exceeds ±0.5 ns or when DLL lock time (1024 cycles) conflicts with system initialization timing.