My Inquiry
My Account
Renesas IDT71P73604S200BQ
- Part No.:
- IDT71P73604S200BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
IDT71P73604S200BQ.pdf
- Description:
- IC SRAM 18MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,140
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDT71P73604S200BQ from Integrated Device Technology is a 18Mb (512K × 36-bit) pipelined DDR-II SRAM with double-data-rate burst-of-4 operation, HSTL-compatible 1.5V I/O interface (scalable to 1.4–1.9V), and 200MHz clock frequency support. It features dual echo clocks (CQ/CQ), programmable output impedance (35–70Ω), and JTAG boundary-scan capability. Designed for high-bandwidth packet buffering in network switching fabric.
For engineers reviewing the IDT71P73604S200BQ datasheet, IDT71P73604S200BQ pinout, IDT71P73604S200BQ application, or IDT71P73604S200BQ equivalent, key selection considerations include its 512K×36 organization, 165-ball fBGA package, burst-of-4 DDR timing, ZQ-based impedance calibration, and SA0/SA1-controlled linear burst sequencing.
Technical Context
This device implements a synchronous, pipelined DDR-II architecture where each read/write access delivers four data words over two K/K clock cycles - achieving effective 400MT/s on the 36-bit DQ[35:0] bus. The internal DLL tightly aligns CQ/CQ echo clocks with output data edges, enabling precise source-synchronous timing at 200MHz.
It uses separate VDD (1.8V core) and VDDQ (1.5V I/O) supplies, with independent VREF for HSTL input threshold setting. Burst addressing is controlled by SA0/SA1 pins, allowing linear sequence selection (00→01→10→11) within the 4-word burst - a feature exclusive to x18/x36 variants like IDT71P73604S200BQ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Organization | 18Mb / 512K × 36-bit - supports wide-data-path buffering without external depth expansion |
| Clock Frequency | 200MHz K/K - defines maximum sustained burst throughput of 4 × 36 bits per 2 clock cycles |
| I/O Interface | HSTL Class I (1.5V) - compatible with 1.4–1.9V systems; requires VREF = VDDQ/2 for proper threshold alignment |
| Output Impedance | Programmable 35–70Ω via ZQ pin - enables dynamic bus termination matching using external 175–350Ω resistor to VSS |
| Burst Mode | Fixed burst-of-4 with SA0/SA1 selectable linear sequence - allows deterministic burst start point within 4-word window |
| Package | 165-ball fine-pitch BGA (13mm × 15mm, 1.0mm pitch) - requires controlled-impedance PCB layout for 36-bit DQ and dual echo clock routing |
| Power Supplies | VDD = 1.7–1.9V (core), VDDQ = 1.4–1.9V (I/O), VREF = VDDQ/2 ± 0.1V - decoupling critical for signal integrity at 200MHz |
Pinout & Package
165-ball fBGA (13mm × 15mm, 1.0mm pitch) with perimeter I/O and internal power/ground balls. Pin functions validated per IDT DSC-6431/00 Rev 00, Table 12c.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[35:0] | Data I/O bus | 36-bit bidirectional DDR data path; sampled on both K and K rising edges during write; driven aligned to C/C or K/K rising edges during read |
| BW0–BW3 | Byte write enables | Four active-low signals controlling DQ[8:0], [17:9], [26:18], [35:27]; sampled on K and K edges to mask individual bytes during burst write |
| SA0, SA1 | Burst address bits | Select linear burst order (00→01→10→11); only present on x18/x36 devices; enable word-level burst start control |
| C, C | Positive/negative output clocks | Primary read clock pair; used with DLL to deskew data-to-clock alignment; can be disabled (tied high) to use K/K instead |
| CQ, CQ | Echo clock outputs | Source-synchronous timing references; rising edges tightly correlated to DQ valid windows; always active, never tri-stated |
| ZQ | Impedance calibration input | Connect external 250Ω resistor to VSS for nominal 50Ω drive strength; ties to VDDQ for minimum impedance mode |
| TCK/TMS/TDI/TDO | JTAG boundary-scan interface | IEEE 1149.1-compliant test access port; enables production testing and interconnect verification |
Key Features
| Feature | Design Value |
|---|---|
| DDR-II burst-of-4 architecture | Delivers 4 words per 2 clock cycles - doubles effective bandwidth versus single-data-rate SRAMs at same clock rate |
| Programmable output impedance (ZQ) | Enables system-level bus termination tuning without external resistors; supports 35–70Ω range with ±10% tolerance |
| Dual echo clocks (CQ/CQ) | Provides deterministic, low-jitter timing reference for receiving controller - eliminates need for external delay compensation |
| Separate VDD/VDDQ supplies | Decouples core logic (1.8V) from I/O circuitry (1.5V) - reduces noise coupling and improves signal integrity on high-speed bus |
| SA0/SA1 burst sequencing control | Allows burst initiation at any of four aligned word positions - essential for packet-aligned buffer management in networking applications |
Applications
| Network Switching Fabric Buffer | High-Speed Test Equipment Memory |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switches with strict latency requirements. IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly to switch fabric ASIC via 36-bit DDR bus; synchronized by C/C clocks and validated by CQ/CQ echo clocks. Use Value: 200MHz burst operation enables 400MT/s throughput on 36-bit bus - sufficient for 14.4 Gbps line-rate buffering with minimal latency jitter. | Use Scenario: Capturing high-speed digital waveforms in automated test equipment requiring deterministic burst read/write timing. IC Role / Device Role / Timing Role: High-bandwidth acquisition memory with JTAG-accessible boundary scan for board-level interconnect validation. Use Value: Programmable ZQ impedance and SA0/SA1 burst control allow precise timing alignment across multiple parallel channels - critical for channel-to-channel skew minimization. |
| Telecom Line Card Packet Buffer | Avionics Data Concentrator Cache |
Use Scenario: Temporary storage of ATM or MPLS cells in carrier-grade line cards operating under extended temperature conditions. IC Role / Device Role / Timing Role: Burst-of-4 DDR-II SRAM supporting 0°C to +70°C ambient; interfaces to FPGA-based traffic manager using HSTL signaling. Use Value: Separate VDD/VDDQ rails and VREF input ensure stable HSTL thresholds across voltage and temperature - maintaining timing margins in thermally variable chassis environments. | Use Scenario: Real-time buffering of sensor telemetry streams in flight control systems requiring DO-254 compliance and traceable sourcing. IC Role / Device Role / Timing Role: Deterministic-latency memory subsystem with JTAG TAP for design verification and field diagnostics. Use Value: DLL-enabled CQ/CQ echo clocks provide sub-nanosecond data-valid alignment - meeting tight timing budgets for safety-critical avionics data paths. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-bandwidth synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C2663KV18 | Same 512K×36 DDR-II organization, 200MHz, 165-ball fBGA; differs in JTAG pinout (TMS/TDI swapped) and ZQ calibration range (200–400Ω) | Requires PCB layout revision for JTAG routing; identical burst and timing behavior for packet buffering | Preferred when existing Cypress toolchain and boundary-scan scripts are in place |
| Micron MT46V32M36 | 512K×36 QDR-II SRAM (not DDR-II); supports quad-data-rate (two reads + two writes per cycle); different pinout and command protocol | Higher peak bandwidth (800MT/s) but incompatible timing model - not drop-in replaceable | Consider only for new designs targeting higher aggregate throughput and willing to redesign controller logic |
Compared with CY7C2663KV18 and MT46V32M36, IDT71P73604S200BQ offers native DDR-II burst-of-4 timing with SA0/SA1 burst sequencing and tighter DLL-based echo clock alignment - making it optimal for legacy switch fabric controllers requiring deterministic 200MHz burst behavior and JTAG verifiability.
Availability
IDT71P73604S200BQ is available at Aetrix Electronics and suitable for network switching fabric buffers, high-speed test equipment memory, telecom line card packet buffers, and avionics data concentrator caches requiring stable component supply and long-term industrial availability.
Supply support for IDT71P73604S200BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and real-time interconnect solutions for communications and computing infrastructure.
IDT71P73604S200BQ belongs to the QDR™II/DDR-II SRAM product line, engineered specifically for high-throughput, low-latency packet buffering in network switching and routing systems where deterministic burst timing and source-synchronous clocking are critical.
FAQ
What is the maximum supported clock frequency for IDT71P73604S200BQ?
IDT71P73604S200BQ is rated for 200MHz K/K clock operation, corresponding to a minimum tKHKH cycle time of 5.00ns. This enables sustained 400MT/s effective data rate on its 36-bit DQ bus in burst-of-4 DDR mode. Operation above 200MHz is not characterized or guaranteed per the DSC-6431/00 datasheet.
Does IDT71P73604S200BQ support single-ended clocking?
IDT71P73604S200BQ supports single-clock-mode operation: tying C and C inputs high disables the DLL and causes K/K to drive both data output registration and echo clock generation. In this mode, timing parameters shift to reflect K/K propagation delays, and echo clock alignment degrades relative to DLL-enabled operation.
How is output impedance calibrated on IDT71P73604S200BQ?
IDT71P73604S200BQ uses its ZQ pin to calibrate output driver impedance. An external 250Ω resistor must be connected between ZQ and VSS to achieve nominal 50Ω drive strength. The device automatically recalibrates every 1024 clock cycles to compensate for voltage and temperature drift, ensuring consistent bus termination.
What role do SA0 and SA1 play in IDT71P73604S200BQ operation?
SA0 and SA1 are burst address bits unique to x18/x36 DDR-II SRAMs like IDT71P73604S200BQ. They select the linear burst sequence (00→01→10→11) and determine the starting word position within the 4-word burst - enabling precise alignment of burst reads/writes to packet boundaries in networking applications.
Is JTAG boundary-scan supported on IDT71P73604S200BQ?
Yes, IDT71P73604S200BQ includes full IEEE 1149.1 JTAG boundary-scan support via dedicated TCK, TMS, TDI, and TDO pins. This enables production test, interconnect verification, and in-system diagnostics - critical for high-reliability networking and avionics applications where traceability and fault isolation are required.
IDT71P73604S200BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - DDR2
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.88 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
IDT71P73604S200BQ FAQ
1.How can I place an order for IDT71P73604S200BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71P73604S200BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71P73604S200BQ reliable?
The price and inventory of IDT71P73604S200BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P73604S200BQ is usually 5 days.
3.What payment methods are accepted for IDT71P73604S200BQ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71P73604S200BQ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71P73604S200BQ?
IDT71P73604S200BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71P73604S200BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71P73604S200BQ?
For technical support, including IDT71P73604S200BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P73604S200BQ requirements.
6.How does Aetrix verify that IDT71P73604S200BQ is sourced from the original manufacturer or authorized distributors?
All IDT71P73604S200BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P73604S200BQ meets industry standards.
7.What is the process for return or replacement of IDT71P73604S200BQ?
All IDT71P73604S200BQ units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P73604S200BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71P73604S200BQ part is unused and in its original packaging.
Return procedure for IDT71P73604S200BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71P73604S200BQ Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
