Renesas IDT71P73604S200BQ8

Overview

IDT71P73604S200BQ8 from Integrated Device Technology is a 18 Mb (512K × 36-bit) pipelined DDR-II SRAM with double-data-rate burst-of-4 operation, HSTL-compatible 1.5 V I/O interface (VDDQ), and 1.8 V core supply (VDD). It features dual echo clocks (CQ/CQ), programmable output impedance (35–70 Ω), and JTAG support. Designed for high-bandwidth packet buffering in network switches and routers.

For engineers reviewing the IDT71P73604S200BQ8 datasheet, IDT71P73604S200BQ8 pinout, IDT71P73604S200BQ8 application, or IDT71P73604S200BQ8 equivalent, this page delivers verified specifications, validated pin functions, confirmed x36 burst architecture, HSTL timing compliance at 200 MHz, and real-world substitution guidance - all grounded in the official IDT DSC-6431/00 datasheet.

Technical Context

The IDT71P73604S200BQ8 implements a synchronous, pipelined DDR-II architecture with two independent clock domains: K/K for address/control/data capture and C/C for data readout and echo clock generation. Its burst-of-4 operation delivers four 36-bit words per two clock cycles, achieving effective 400 MT/s on the DQ bus at 200 MHz K-clock frequency.

It supports SA0/SA1-controlled linear burst sequencing, scalable output drive via external ZQ resistor (175–350 Ω), and DLL-enabled tight data-to-clock alignment (tCHQV ≤ 0.45 ns). All inputs and outputs comply with HSTL Class I (1.5 V) with voltage scaling up to 1.9 V, and feature separate VDDQ and VREF for interface flexibility.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch Ball Grid Array (fBGA), 1.0 mm pitch, 13 mm × 15 mm body size, RoHS-compliant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed burst SRAM applications.

Compared with CY7C2663KV18 and MT55LSD128H36, the IDT71P73604S200BQ8 offers proven DDR-II burst-of-4 compatibility with legacy network ASICs, while avoiding QDR-II+ protocol complexity and ensuring seamless migration from Cypress's functionally identical part.

Availability

IDT71P73604S200BQ8 is available at Aetrix Electronics and suitable for network infrastructure, test instrumentation, and telecom baseband applications requiring stable component supply, long-lifecycle support, and guaranteed traceable sourcing.

Supply support for IDT71P73604S200BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing markets.

IDT71P73604S200BQ8 belongs to IDT's DDR-II SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in packet-switched networks and high-speed instrumentation where deterministic burst access and HSTL signal integrity are critical.

FAQ

What is the maximum operating frequency of the IDT71P73604S200BQ8?

The IDT71P73604S200BQ8 is rated for 200 MHz K-clock operation, with minimum average clock cycle time (tKHKH) of 5.00 ns. At this frequency, it achieves 400 MT/s effective data rate on its 36-bit DQ bus. The "S200" suffix explicitly denotes this 200 MHz speed grade, validated across commercial temperature range (0°C to +70°C) per DSC-6431/00.

Does the IDT71P73604S200BQ8 support single-ended or differential clocks?

The IDT71P73604S200BQ8 requires true differential clock pairs: K/K and C/C are complementary inputs, not single-ended signals. Both rising edges are used for timing capture - K latches addresses and first/third burst words, while K latches second/fourth words. Driving K and K with identical-phase signals violates timing and will cause functional failure.

How is output impedance calibrated on the IDT71P73604S200BQ8?

Output impedance is calibrated via the ZQ pin connected to an external resistor RQ tied to VSS. RQ = 250 Ω yields nominal 50 Ω drive strength (since ZQ = 0.2 × RQ). The device auto-adjusts every 1024 clock cycles to compensate for voltage/temperature drift. Tying ZQ directly to VDDQ forces minimum impedance (~35 Ω), per Section 6.42, Page 4 of the datasheet.

Can the IDT71P73604S200BQ8 operate without the DLL enabled?

Yes - the DLL can be disabled by holding the Doff pin LOW. When disabled, C/C (or K/K in single-clock mode) directly clock the output register, introducing additional propagation delay (not specified in datasheet). AC timing parameters change significantly; tCHQV increases beyond 0.45 ns, and DLL-related specs like tKC lock no longer apply.

What is the purpose of SA0 and SA1 on the IDT71P73604S200BQ8?

SA0 and SA1 are burst sequence address bits unique to x18 and x36 devices like the IDT71P73604S200BQ8. They select one of four linear burst orders (e.g., 00 → 01 → 10 → 11) per Table 22, enabling flexible addressing within a 4-word burst without incrementing the main address bus - critical for wrapping burst reads across memory boundaries.