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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas IDT71P73604S250BQ

Name: IDT71P73604S250BQ
Brand: Renesas
SKU: IDT71P73604S250BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IDT71P73604S250BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: IDT71P73604S250BQ.pdf

Description:: IC SRAM 18MBIT PAR 165CABGA

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Product details

Overview

IDT71P73604S250BQ from Integrated Device Technology is a 18Mb (512K × 36-bit) pipelined DDR II SRAM with double-data-rate burst-of-4 operation, 250MHz clock frequency, HSTL I/O interface, and 1.8V core / 1.5V I/O supply. It delivers 1.8 Gbps peak data bandwidth via bidirectional DQ[35:0] bus synchronized to K/K and C/C clocks, targeting high-speed packet buffering in network switches and routers.

For engineers reviewing the IDT71P73604S250BQ datasheet, IDT71P73604S250BQ pinout, IDT71P73604S250BQ application, or IDT71P73604S250BQ equivalent, key selection criteria include its 165-ball fBGA package, programmable 35–70Ω output impedance via ZQ pin, JTAG support, and SA0/SA1-controlled linear burst addressing for x36 configuration.

Technical Context

The IDT71P73604S250BQ implements a synchronous DDR architecture with two independent clock domains: K/K for address/control/data capture and C/C for read data echo timing. Its internal DLL aligns DQ outputs to C/C edges with ≤0.5 ns skew, enabling tight setup/hold margins at 250MHz.

It supports burst-of-4 linear addressing with SA0/SA1 pins selecting one of four 36-bit word sequences, and features scalable HSTL I/O (1.4–1.9V VDDQ), separate VDD (1.8V) and VDDQ supplies, and impedance-controlled outputs calibrated via external 250Ω RQ resistor on ZQ pin.

Key Specifications

Parameter	Value and Actual Design Meaning
Density & Organization	18Mb total; 512K words × 36 bits - supports wide-data-path buffering without external depth expansion
Clock Frequency	250MHz (t_KHKH = 4.0 ns) - enables 1.8 Gbps peak throughput on DQ bus using DDR transfers
I/O Interface	HSTL Class I (1.5V VDDQ nominal) - compatible with 1.8V system logic while maintaining signal integrity at high speed
Core / I/O Voltage	VDD = 1.8V ±100mV; VDDQ = 1.4–1.9V - decoupled power domains allow independent noise management
Output Impedance	Programmable 35–70Ω via ZQ pin and external RQ - matches 50Ω PCB traces without external termination resistors
Burst Mode	Fixed burst-of-4, linear sequence controlled by SA0/SA1 - ensures deterministic latency and simplifies controller design
Package	165-ball fine-pitch BGA (13mm × 15mm, 1.0mm pitch) - industry-standard footprint for high-density routing

Pinout & Package

Package: 165-ball fBGA (13mm × 15mm, 1.0mm pitch), RoHS-compliant, commercial temperature range (0°C to +70°C).

Pin/Terminal	Circuit Role	Design Meaning
DQ[35:0]	Data I/O bus	36-bit bidirectional DDR data path; sampled on rising edges of K/K during writes, driven aligned to C/C or K/K during reads
BW0–BW3	Byte write enables	Four active-low signals controlling individual 9-bit bytes within 36-bit word; sampled on both K and K rising edges
SA0, SA1	Burst address select	Define linear burst order (a→b→c→d) per table; only present on x18/x36 devices like IDT71P73604
K, K	Primary input clocks	Edge-triggered clocks for address, control, and first/third (K) or second/fourth (K) burst data capture
C, C	Output clock inputs	Reference clocks for DLL-aligned read data timing; may be disabled to use K/K for echo clock generation
CQ, CQ	Echo clock outputs	Synchronous to DQ outputs; used as data-valid strobes with <0.5 ns skew - eliminates need for board-level deskew
ZQ	Impedance calibration input	Connected to 250Ω resistor to VSS; sets nominal 50Ω output drive strength; tied to VDDQ for minimum impedance mode
VDD, VDDQ, VSS, VREF	Power & reference	VDD = 1.8V core; VDDQ = 1.5V I/O; VREF = VDDQ/2 reference for HSTL thresholds; all require local decoupling
TCK, TMS, TDI, TDO	JTAG boundary-scan	IEEE 1149.1-compliant test interface; supports device programming, diagnostics, and interconnect testing

Key Features

Feature	Design Value
DDR Burst-of-4 Architecture	Delivers four 36-bit words per two K-clock cycles - doubles effective bandwidth versus single-data-rate SRAMs
Programmable Output Impedance	35–70Ω range calibrated via ZQ pin and external RQ resistor - eliminates discrete termination and adapts to varying trace impedances
DLL-Based Clock Alignment	Internal delay-locked loop aligns DQ outputs to C/C edges within ±0.5 ns - enables reliable sampling at 250MHz without board-level timing closure challenges
HSTL I/O with Scalable VDDQ	Supports 1.4–1.9V VDDQ - interoperates with 1.8V systems while maintaining HSTL noise margin and edge rate control
SA0/SA1 Burst Control	Selects among four linear burst sequences (e.g., 00→01→10→11) - allows optimized memory access patterns for packet header vs. payload handling
JTAG Boundary-Scan Support	Full IEEE 1149.1 compliance - enables in-system testability, fault isolation, and production verification without physical probe access

Applications

Network Packet Buffering	Telecom Line Card Memory
Use Scenario: Storing ingress/egress Ethernet or SONET frames in multi-gigabit switch fabric ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared buffer providing 1.8 Gbps sustained read/write throughput with deterministic 4-cycle burst latency. Use Value: Eliminates external bus arbitration and enables full utilization of 250MHz DDR interface - reduces packet loss under bursty traffic loads.	Use Scenario: Acting as frame buffer in OC-192/STM-64 line cards requiring jitter-tolerant, high-reliability memory. IC Role / Device Role / Timing Role: Synchronous DDR II SRAM with DLL-aligned echo clocks ensures precise data capture across temperature and voltage variations. Use Value: Maintains <±0.5 ns CQ-to-DQ skew over 0–70°C - avoids timing guardbands and increases system margin.
High-Speed Test Equipment Memory	Avionics Data Acquisition Buffer
Use Scenario: Capturing real-time digital waveform samples at >500 MS/s in automated test systems. IC Role / Device Role / Timing Role: Pipelined burst SRAM with SA0/SA1-controlled linear addressing provides contiguous 512K-word capture space. Use Value: Supports seamless circular buffer operation with no gaps between bursts - preserves sample continuity during long acquisitions.	Use Scenario: Buffering sensor telemetry streams from multiple ADC channels in flight control computers. IC Role / Device Role / Timing Role: Radiation-tolerant (qualified per MIL-PRF-38535) 165-ball fBGA SRAM with JTAG for in-flight diagnostics. Use Value: Enables built-in self-test and field-upgradable firmware storage without adding external nonvolatile memory.

Network Packet Buffering

Telecom Line Card Memory

Use Scenario: Storing ingress/egress Ethernet or SONET frames in multi-gigabit switch fabric ASICs.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency shared buffer providing 1.8 Gbps sustained read/write throughput with deterministic 4-cycle burst latency.

Use Value: Eliminates external bus arbitration and enables full utilization of 250MHz DDR interface - reduces packet loss under bursty traffic loads.

Use Scenario: Acting as frame buffer in OC-192/STM-64 line cards requiring jitter-tolerant, high-reliability memory.

IC Role / Device Role / Timing Role: Synchronous DDR II SRAM with DLL-aligned echo clocks ensures precise data capture across temperature and voltage variations.

Use Value: Maintains <±0.5 ns CQ-to-DQ skew over 0–70°C - avoids timing guardbands and increases system margin.

High-Speed Test Equipment Memory

Avionics Data Acquisition Buffer

Use Scenario: Capturing real-time digital waveform samples at >500 MS/s in automated test systems.

IC Role / Device Role / Timing Role: Pipelined burst SRAM with SA0/SA1-controlled linear addressing provides contiguous 512K-word capture space.

Use Value: Supports seamless circular buffer operation with no gaps between bursts - preserves sample continuity during long acquisitions.

Use Scenario: Buffering sensor telemetry streams from multiple ADC channels in flight control computers.

IC Role / Device Role / Timing Role: Radiation-tolerant (qualified per MIL-PRF-38535) 165-ball fBGA SRAM with JTAG for in-flight diagnostics.

Use Value: Enables built-in self-test and field-upgradable firmware storage without adding external nonvolatile memory.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Cypress CY7C2663KV18	Same 512K×36 DDR II architecture, 250MHz, but uses QDR-II+ protocol with separate read/write ports and no SA0/SA1 burst control	Requires dual-port controller logic; lacks linear burst sequencing - less suitable for simple burst-buffer applications	Choose when system demands true simultaneous read/write or higher density scaling beyond 18Mb
Micron MT46V32M16	DDR2 SDRAM (not SRAM); 32M×16 organization; requires refresh, command decoding, and longer latency	Lower cost per bit but introduces refresh overhead and non-deterministic access timing - unsuitable for hard-real-time buffering	Choose only for cost-sensitive, non-real-time applications where latency variability is acceptable

Compared with CY7C2663KV18 and MT46V32M16, the IDT71P73604S250BQ offers deterministic burst latency, no refresh requirement, and SA0/SA1-configurable burst ordering - making it optimal for time-critical packet buffering where controller simplicity and timing predictability are essential.

Availability

IDT71P73604S250BQ is available at Aetrix Electronics and suitable for network switching, telecom infrastructure, high-speed test equipment, and avionics data acquisition requiring stable component supply and long-term lifecycle support.

Supply support for IDT71P73604S250BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF solutions for communications, computing, and industrial markets.

The IDT71P73604S250BQ belongs to the QDR™ II SRAM family developed jointly by IDT, Cypress, and Micron to address bandwidth bottlenecks in networking ASICs - emphasizing low-latency, DDR burst efficiency, and HSTL signal integrity.

FAQ

What is the maximum operating frequency of the IDT71P73604S250BQ?

The IDT71P73604S250BQ is rated for 250MHz operation, corresponding to a minimum average clock cycle time (t_KHKH) of 4.0 ns. This frequency applies to both K/K and C/C input clocks under commercial temperature conditions (0°C to +70°C) with VDD = 1.8V ±100mV and VDDQ = 1.5V. The device maintains full DDR burst-of-4 functionality and guaranteed AC timing parameters at this speed.

Does the IDT71P73604S250BQ require an external termination resistor?

No, the IDT71P73604S250BQ does not require external series or parallel termination resistors. Its output drivers feature programmable impedance (35–70Ω) calibrated via the ZQ pin and an external 250Ω resistor to VSS. When configured correctly, this achieves nominal 50Ω drive strength matched to standard PCB traces, eliminating the need for discrete terminations and reducing BOM count.

How is burst addressing controlled on the IDT71P73604S250BQ?

Burst addressing on the IDT71P73604S250BQ is controlled by SA0 and SA1 pins, which select one of four linear burst sequences (e.g., 00→01→10→11) per the Linear Burst Sequence Table. These pins are sampled at the start of each burst and determine the order in which the four 36-bit words are accessed - enabling optimization for specific data flow patterns such as packet header-first or payload-first access.

Can the IDT71P73604S250BQ operate with only the K/K clocks?

Yes, the IDT71P73604S250BQ supports single-clock mode: tying C and C high disables the DLL and causes K/K to control both data output timing and echo clock (CQ/CQ) generation. In this mode, DQ outputs align to K/K edges instead of C/C, and timing parameters shift accordingly (e.g., t_CHQV becomes t_KHQV). This simplifies clock distribution in systems lacking dedicated echo clock routing.

What is the purpose of the Doff pin on the IDT71P73604S250BQ?

The Doff pin disables the internal delay-locked loop (DLL) when held low. With DLL off, C/C (or K/K in single-clock mode) directly clocks the output register, introducing additional propagation delay (not specified but comparable to legacy SRAMs). This mode is used for debug, power reduction, or compatibility with controllers unable to manage DLL lock timing - though AC specifications differ from DLL-enabled operation.

IDT71P73604S250BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - DDR2

Memory Size:: 18Mbit

Memory Organization:: 512K x 36

Memory Interface:: Parallel

Clock Frequency:: 250 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 6.3 ns

Voltage - Supply:: 1.7V ~ 1.9V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

IDT71P73604S250BQ FAQ

1.How can I place an order for IDT71P73604S250BQ through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71P73604S250BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71P73604S250BQ reliable?

The price and inventory of IDT71P73604S250BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P73604S250BQ is usually 5 days.

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IDT71P73604S250BQ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71P73604S250BQ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71P73604S250BQ?

For technical support, including IDT71P73604S250BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P73604S250BQ requirements.

6.How does Aetrix verify that IDT71P73604S250BQ is sourced from the original manufacturer or authorized distributors?

All IDT71P73604S250BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P73604S250BQ meets industry standards.

7.What is the process for return or replacement of IDT71P73604S250BQ?

All IDT71P73604S250BQ units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P73604S250BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71P73604S250BQ part is unused and in its original packaging.

Return procedure for IDT71P73604S250BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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