Renesas IDT71P73804S167BQ

Overview

IDT71P73804 from Integrated Device Technology is a 18Mb (1M × 18-bit) pipelined DDR-II SRAM with double-data-rate burst-of-4 operation, HSTL I/O interface, 1.8V core voltage (VDD), and 1.5V I/O supply (VDDQ). It delivers high-bandwidth memory access for network packet buffering and switching fabric applications requiring deterministic latency and low-jitter echo clock alignment.

For engineers reviewing the IDT71P73804 datasheet, IDT71P73804 pinout, IDT71P73804 application, or IDT71P73804 equivalent, key selection considerations include its 165-ball fBGA package, SA0/SA1 burst-addressing capability, programmable output impedance (35–70 Ω), DLL-controlled CQ/CQ echo clock timing, and support for 167 MHz / 200 MHz / 250 MHz K/K clock frequencies.

Technical Context

The IDT71P73804 implements a synchronous, pipelined DDR architecture with dual input clock pairs (K/K and C/C), enabling four-word bursts per two clock cycles. Its internal DLL tightly aligns DQ outputs to C/C rising edges (±0.45 ns hold/valid window at 167 MHz), while echo clocks CQ/CQ are generated with matched duty cycle and edge correlation.

It supports burst-order control via SA0/SA1 inputs (only on x18/x36 variants), byte-write masking (BW0/BW1), and scalable HSTL I/O with VREF-referenced inputs and independently regulated VDDQ (1.4–1.9 V). The device features JTAG boundary-scan (TCK/TMS/TDI/TDO) and ZQ-based output impedance calibration using an external 250 Ω resistor.

Key Specifications

Pinout & Package

Package: 165-ball fine-pitch BGA (fBGA), 13 mm × 15 mm, 1.0 mm pitch, RoHS-compliant. Ball grid layout optimized for signal integrity in high-speed DDR routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed synchronous SRAM applications.

Compared with CY7C2663KV18 and MT55LSD128H18, the IDT71P73804 uniquely combines SA0/SA1 burst sequencing, ZQ-calibrated output drive, and JTAG test support - making it the only option among the three qualified for designs requiring programmable burst order and production-level interconnect validation.

Availability

IDT71P73804 is available at Aetrix Electronics and suitable for network packet buffering, switch fabric memory, network processor cache, and telecom line card buffer applications requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.

Supply support for IDT71P73804 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance serial switching solutions.

The IDT71P73804 belongs to IDT's DDR-II SRAM product line, engineered specifically for high-bandwidth, low-latency data buffering in networking, telecommunications, and high-end computing systems where deterministic timing and signal integrity are critical.

FAQ

What is the maximum operating frequency of the IDT71P73804?

The IDT71P73804 supports up to 250 MHz K/K clock frequency (tKHKH = 4.0 ns minimum), delivering a peak data rate of 500 MT/s per data line in DDR mode. At this speed, the device achieves 1.8 Gbps per DQ line with full 4-word burst utilization. Electrical specifications for setup/hold times and output valid windows are guaranteed across 167 MHz, 200 MHz, and 250 MHz speed grades per the datasheet.

Does the IDT71P73804 support burst-order control?

Yes, the IDT71P73804 supports burst-order control via SA0 and SA1 pins, which define the starting word in the 4-word linear burst sequence (e.g., 00→01→10→11). This capability is exclusive to x18 and x36 configurations - confirmed in the pin definitions and Linear Burst Sequence Table for IDT71P73804. SA0/SA1 are not present or functional on x8/x9 variants.

How is output impedance calibrated on the IDT71P73804?

Output impedance on the IDT71P73804 is calibrated using the ZQ pin connected to an external resistor (RQ) tied to VSS. With RQ = 250 Ω, the device achieves nominal 50 Ω drive strength (ZQ = RQ / 5). The allowable RQ range is 175–350 Ω to maintain ±10% impedance tolerance. Calibration occurs automatically every 1024 clock cycles to compensate for voltage/temperature drift.

Can the IDT71P73804 operate without the DLL enabled?

Yes, the IDT71P73804 can operate with the DLL disabled by holding the Doff pin low. In this mode, C/C (or K/K if C/C are disabled) directly clock the output register, introducing additional propagation delay (not specified in datasheet but comparable to standard SRAMs). AC timing parameters change significantly - tCHQV increases and DLL-specific specs like lock time no longer apply.

What package type and ball count does the IDT71P73804 use?

The IDT71P73804 uses a 165-ball fine-pitch BGA (fBGA) package measuring 13 mm × 15 mm with 1.0 mm pitch. Pin configuration is documented in Table 12b of the datasheet, confirming dedicated locations for DQ[17:0], BW0/BW1, SA0/SA1, K/K, C/C, CQ/CQ, ZQ, VDDQ, VDD, VSS, VREF, and JTAG signals - all consistent with the 165-ball layout.