Renesas IDT71P73804S200BQ

Overview

IDT71P73804 from Integrated Device Technology is a 18Mb (1M × 18-bit) pipelined DDR II SRAM with double-data-rate burst-of-4 operation, HSTL-compatible 1.5V I/O interface (scalable to 1.4–1.9V), and 1.8V core supply. It features dual echo clocks (CQ/CQ), programmable output impedance (35–70 Ω), and JTAG support. Used in high-bandwidth networking buffers and packet-forwarding engines requiring deterministic latency.

For engineers reviewing the IDT71P73804 datasheet, IDT71P73804 pinout, IDT71P73804 application, or IDT71P73804 equivalent, key selection considerations include its 165-ball fBGA package, SA0/SA1 burst-address control for x18 mode, DLL-enabled tight data-to-clock alignment, and scalable drive strength for impedance-matched DDR bus design.

Technical Context

The IDT71P73804 implements a synchronous DDR architecture with two independent clock domains: K/K for address/control/data capture and C/C for read data output timing. Its internal DLL aligns DQ outputs to C/C edges with sub-500ps jitter tolerance, enabling precise deskew across multi-device memory subsystems.

It supports linear burst sequencing via SA0/SA1 pins for 1M×18 configuration, allowing word-level addressing within the 4-word burst. Write operations use byte-write enables BW0/BW1 to mask DQ[8:0] and DQ[17:9], respectively, while read outputs are automatically three-stated when inactive - no external OE signal required.

Key Specifications

Pinout & Package

165-ball fBGA (13mm × 15mm, 1.0mm pitch), RoHS-compliant, commercial temperature range (0°C to +70°C). Pinout optimized for DDR signal integrity: dedicated VSS/VDDQ planes, distributed power balls, and echo clock pairs placed adjacent to DQ groups.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR II SRAM applications.

Compared with CY7C2665KV18, IDT71P73804 offers burst-order flexibility via SA0/SA1 and broader VDDQ scalability (1.4–1.9V vs. 1.7–1.9V), making it preferable for systems requiring adaptive I/O voltage or cache-line-aligned burst starts; Micron's part belongs to a different memory class entirely and introduces non-deterministic latency.

Availability

IDT71P73804 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom infrastructure hardware, and FPGA-based signal processing platforms requiring stable component supply and long-term obsolescence management.

Supply support for IDT71P73804 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology, Inc. (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance serial switching solutions before its acquisition by Renesas Electronics in 2019.

IDT71P73804 belongs to the QDR™II SRAM product line, designed specifically for bandwidth-intensive applications such as network routers, switches, and baseband processors where deterministic latency and DDR efficiency outweigh cost-per-bit concerns.

FAQ

What is the maximum operating frequency of the IDT71P73804?

The IDT71P73804 supports a maximum clock frequency of 250MHz, corresponding to a minimum average clock cycle time (tKHKH) of 4.00ns. This rating applies under specified conditions: VDD = 1.8V ±100mV, VDDQ = 1.4–1.9V, and ambient temperature 0°C to +70°C. At this speed, the device delivers four 18-bit words per two clock cycles, achieving 1.8 Gbps effective bandwidth on its DQ[17:0] bus.

Does the IDT71P73804 require an external termination resistor on its DQ lines?

No, the IDT71P73804 does not require external series or parallel termination resistors on DQ lines. Its output drivers feature programmable impedance controlled via the ZQ pin and an external RQ resistor (typically 250Ω to ground), setting nominal output resistance to 50Ω. This internal calibration eliminates the need for board-level termination components and adapts to varying trace impedances across production runs.

How does the burst addressing work on the IDT71P73804 given its 1M×18 organization?

The IDT71P73804 uses SA0 and SA1 pins to select burst sequence order in its 1M×18 configuration. These pins determine the linear progression of the four-word burst (e.g., 00→01→10→11), enabling alignment to natural cache-line boundaries. Unlike x8/x9 variants, the x18 device supports true word-level addressing within the burst - allowing software to initiate reads/writes at any 18-bit word offset without forcing full-burst access to the first location.

Can the IDT71P73804 operate with only the K/K clock pair, without using C/C inputs?

Yes, the IDT71P73804 supports single-clock mode: tying C and C high disables their function, causing K/K to control both input sampling and output timing. In this mode, DQ outputs align to K/K rising edges instead of C/C, and echo clocks CQ/CQ are generated from K/K. The DLL remains active unless explicitly disabled via the Doff pin, preserving output alignment accuracy even without external C/C sources.

What is the purpose of the Doff pin on the IDT71P73804?

The Doff pin disables the internal delay-locked loop (DLL) when driven low. With DLL off, C/C (or K/K in single-clock mode) directly clocks the output register, introducing additional propagation delay (not characterized in datasheet) between clock edge and DQ transition. This mode is used only for debug or compatibility with legacy controllers lacking DLL-aware timing models; normal operation requires Doff high to maintain guaranteed tCHQV/tCHQX specifications.