Renesas IDT71P73804S250BQ
- Part No.:
- IDT71P73804S250BQ
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
IDT71P73804S250BQ.pdf
- Description:
- IC SRAM 18MBIT PAR 165CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71P73804 from Integrated Device Technology is a 18Mb (1M × 18-bit) pipelined DDR II SRAM with double-data-rate burst-of-4 operation, HSTL-compatible 1.5V I/O interface, and 1.8V core supply. It delivers 250MHz clock frequency, scalable 35–70Ω output impedance via ZQ calibration, and supports linear burst addressing via SA0/SA1 pins for word-level access in x18 configuration. Used in high-bandwidth packet buffering and network switch data planes.
For engineers reviewing the IDT71P73804 datasheet, IDT71P73804 pinout, IDT71P73804 application, or IDT71P73804 equivalent, key selection criteria include its 1M×18 organization, 165-ball fBGA package, DLL-aligned echo clocks (CQ/CQ), JTAG support, and programmable drive strength for impedance-matched DDR bus design.
Technical Context
The IDT71P73804 implements a synchronous DDR architecture with dual clock domains: K/K for address/control/data capture and C/C for read data/echo clock generation. Its internal DLL tightly aligns DQ outputs to C/C edges, achieving ≤0.5ns output valid/hold windows at 250MHz.
It features multiplexed address inputs, burst-ordered linear addressing (configurable via SA0/SA1), and independent byte-write control (BW0/BW1) enabling selective 9-bit writes per burst word. The device uses separate VDD (1.8V) and VDDQ (1.4–1.9V) supplies, with VREF referenced to VDDQ/2 for HSTL signal integrity.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Density & Width | 18Mb total memory, organized as 1,048,576 × 18 bits - supports high-throughput data buffering with 18-bit parallel interface. |
| Clock Frequency | 250MHz maximum K/K and C/C input clock rate - enables 500MT/s effective data rate on DQ bus using DDR. |
| Supply Voltages | VDD = 1.7–1.9V (core), VDDQ = 1.4–1.9V (I/O), VREF = VDDQ/2 ±0.1V - allows interoperability with 1.5V HSTL and scaled 1.8V systems. |
| Output Impedance | Programmable 35–70Ω via external ZQ resistor (175–350Ω to VSS) - enables precise PCB trace termination matching for signal integrity. |
| Burst Mode | Fixed 4-word burst on every access - reduces address overhead and guarantees predictable latency for streaming applications. |
| Package | 165-ball fine-pitch BGA (13mm × 15mm, 1.0mm pitch) - provides high I/O count in compact footprint suitable for dense networking PCBs. |
| JTAG Support | IEEE 1149.1-compliant TDI/TDO/TCK/TMS pins - enables boundary-scan testing and in-system debug of memory subsystems. |
Pinout & Package
Package: 165-ball fBGA (13mm × 15mm, 1.0mm pitch), RoHS-compliant, commercial temperature range (0°C to +70°C).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| DQ[17:0] | Data I/O (bidirectional) | Synchronous DDR data bus; samples input on K/K rising edges during write, drives aligned to C/C or K/K depending on mode. |
| BW0, BW1 | Byte Write Enable (active low) | Controls writing of DQ[8:0] (BW0) and DQ[17:9] (BW1); enables partial-word updates without read-modify-write cycles. |
| SA0, SA1 | Burst Address Select | Configures linear burst sequence start point (00–11) for x18 devices - allows alignment to word boundaries in burst reads/writes. |
| K, K | Primary Input Clock Pair | Latches address, R/W, LD, BWx, and first/third/fourth burst words; used for all control and timing when C/C disabled. |
| C, C | Output Clock Pair | Drives read data and generates echo clocks (CQ/CQ); DLL-aligned to minimize skew between data and clock at receiver. |
| CQ, CQ | Echo Clock Outputs | Free-running, always-enabled clocks tightly correlated to DQ outputs - serve as data-valid strobes for source-synchronous capture. |
| ZQ | Impedance Calibration Input | Connects to external 250Ω resistor to VSS to set nominal 50Ω output drive; tying to VDDQ forces minimum impedance mode. |
| Doff | DLL Disable Control | Pulling low disables internal DLL - increases DQ propagation delay but simplifies timing analysis in non-critical paths. |
| VDD, VDDQ, VSS, VREF | Power & Reference | VDD powers core logic (1.8V); VDDQ powers I/O (1.5V typical); VREF sets HSTL threshold at VDDQ/2 for noise margin. |
Key Features
| Feature | Design Value |
|---|---|
| DDR Burst-of-4 Architecture | Delivers four data words per two clock cycles - doubles effective bandwidth over single-data-rate SRAMs without increasing clock frequency. |
| HSTL-15 I/O Interface | Supports 1.5V HSTL signaling with DC input thresholds centered at VDDQ/2 - ensures compatibility with FPGA and ASIC memory controllers using JEDEC HSTL standards. |
| Programmable Output Impedance | Adjusts drive strength via ZQ resistor to match PCB trace impedance - eliminates need for external series termination resistors and reduces board area/cost. |
| DLL-Based Output Timing | Internal delay-locked loop aligns DQ output edges to C/C clock edges within ±0.5ns - enables reliable source-synchronous capture at 500MT/s without complex PCB length matching. |
| SA0/SA1 Burst Addressing | Allows selection of burst start offset (00–11) in x18 mode - supports flexible data alignment for packet header/tail processing in telecom buffers. |
Applications
| Network Packet Buffering | High-Speed Switch Fabric Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet or SONET packets in line cards before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer providing 500MT/s burst throughput with deterministic 4-cycle access timing. Use Value: Enables full-line-rate buffering for 10Gbps+ interfaces without backpressure, leveraging burst-of-4 efficiency and DLL-aligned echo clocks for clean data capture. | Use Scenario: Serving as shared memory for crossbar switch arbitration logic in enterprise/core routers. IC Role / Device Role / Timing Role: Dual-port-capable DDR SRAM acting as temporary storage for cell/packet descriptors and forwarding tables. Use Value: 1M×18 organization matches common descriptor widths; SA0/SA1 burst control allows aligned descriptor fetches, reducing controller overhead. |
| Telecom Baseband Processing | Test Equipment Data Capture |
Use Scenario: Buffering IQ samples between ADC/DAC and DSP in 4G/LTE baseband units. IC Role / Device Role / Timing Role: Synchronous burst memory interfacing directly to FPGA-based digital front-end logic. Use Value: HSTL I/O and 1.5V VDDQ ensure compatibility with Xilinx/Intel FPGA memory PHYs; ZQ calibration maintains signal integrity across temperature. | Use Scenario: Capturing high-speed serial data streams from DUTs in automated test systems. IC Role / Device Role / Timing Role: High-speed acquisition buffer synchronized to system clock and echo clocks for precise timestamping. Use Value: CQ/CQ echo clocks provide hardware-accurate data-valid strobes, eliminating software-based sampling uncertainty in real-time capture. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C2665KV18 | Same 1M×18 DDR II architecture, 250MHz, 165-ball fBGA, but uses different pinout (e.g., no dedicated SA0/SA1; burst order fixed) | Lacks SA0/SA1 burst address control - limits flexibility in descriptor-aligned memory access patterns. | Select when pin compatibility with legacy Cypress designs is required and burst-start alignment is not needed. |
| Micron MT46V16M18DT-5B | 16M×18 DDR SDRAM (not SRAM), 200MHz, 1.8V VDD/VDDQ, different command protocol (CAS/RAS), no ZQ or DLL | Requires refresh, longer latency, and controller-side burst management - unsuitable for zero-wait-state deterministic access. | Select only if system already uses DDR SDRAM infrastructure and can tolerate higher latency and refresh overhead. |
Compared with CY7C2665KV18, IDT71P73804 offers configurable burst start via SA0/SA1 for optimized descriptor handling; compared with MT46V16M18DT-5B, it delivers true SRAM simplicity-no refresh, fixed 4-cycle latency, and DLL-aligned timing for deterministic high-speed capture.
Availability
IDT71P73804 is available at Aetrix Electronics and suitable for network packet buffering, high-speed switch fabric memory, and telecom baseband processing requiring stable component supply and long-term industrial availability.
Supply support for IDT71P73804 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory interface, and RF products for communications, computing, and industrial markets.
IDT71P73804 belongs to the QDR™II SRAM family developed jointly by IDT, Cypress, and Micron to deliver high-bandwidth, low-latency synchronous memory for networking and packet-processing systems.
FAQ
What is the memory organization and total capacity of the IDT71P73804?
The IDT71P73804 is organized as 1,048,576 words × 18 bits, delivering a total capacity of 18 megabits (18Mb). This 1M×18 configuration is optimized for applications requiring wide data paths such as network packet descriptors and baseband IQ sample buffering. The IDT71P73804 supports burst-of-4 accesses with linear addressing controlled by SA0 and SA1 pins.
Does the IDT71P73804 support programmable output drive strength, and how is it configured?
Yes, the IDT71P73804 supports programmable output impedance from 35Ω to 70Ω via the ZQ pin. An external resistor (RQ = 175–350Ω) must be connected between ZQ and VSS to set nominal 50Ω drive; connecting ZQ directly to VDDQ forces minimum impedance. This feature eliminates external series termination and adapts to varying PCB trace impedances. The IDT71P73804 recalibrates every 1024 clock cycles to compensate for voltage/temperature drift.
How does the DLL in the IDT71P73804 improve timing performance?
The IDT71P73804 integrates a delay-locked loop (DLL) that aligns DQ output edges precisely with C/C clock edges, achieving ≤0.5ns output valid/hold windows at 250MHz. This eliminates flight-time skew between clock and data at the receiver, enabling reliable source-synchronous capture without strict PCB length matching. The IDT71P73804 allows DLL disable via the Doff pin for simplified timing analysis when ultra-low jitter is not required.
What are the power supply requirements for the IDT71P73804, and why are VDD and VDDQ separate?
The IDT71P73804 requires VDD = 1.7–1.9V for the 1.8V core logic and VDDQ = 1.4–1.9V for the HSTL I/O interface, with VREF = VDDQ/2. Separating VDD and VDDQ isolates core switching noise from sensitive I/O drivers, improves signal integrity, and allows interfacing with mixed-voltage systems (e.g., 1.5V HSTL controllers). The IDT71P73804 draws up to 650mA operating current at 250MHz in x18 mode.
Can the IDT71P73804 operate in single-clock mode, and what pins are repurposed?
Yes, the IDT71P73804 supports single-clock mode by tying C and C high, causing K and K to control both data output timing and echo clock generation. In this mode, DQ outputs align to K/K edges instead of C/C, and CQ/CQ remain active but derived from K/K. This simplifies clock routing in space-constrained designs while retaining burst-of-4 functionality and byte-write capability. The IDT71P73804 maintains full feature support including ZQ calibration and JTAG in single-clock mode.
IDT71P73804S250BQ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - DDR2
- Memory Size:
- 18Mbit
- Memory Organization:
- 1M x 18
- Memory Interface:
- Parallel
- Clock Frequency:
- 250 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 6.3 ns
- Voltage - Supply:
- 1.7V ~ 1.9V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
IDT71P73804S250BQ FAQ
1.How can I place an order for IDT71P73804S250BQ through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71P73804S250BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71P73804S250BQ reliable?
The price and inventory of IDT71P73804S250BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71P73804S250BQ is usually 5 days.
3.What payment methods are accepted for IDT71P73804S250BQ?
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Once your IDT71P73804S250BQ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71P73804S250BQ?
For technical support, including IDT71P73804S250BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71P73804S250BQ requirements.
6.How does Aetrix verify that IDT71P73804S250BQ is sourced from the original manufacturer or authorized distributors?
All IDT71P73804S250BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71P73804S250BQ meets industry standards.
7.What is the process for return or replacement of IDT71P73804S250BQ?
All IDT71P73804S250BQ units undergo pre-shipment inspection (PSI). If there is an issue with IDT71P73804S250BQ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71P73804S250BQ part is unused and in its original packaging.
Return procedure for IDT71P73804S250BQ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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