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Renesas IDT71T75602S200PF
- Part No.:
- IDT71T75602S200PF
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
IDT71T75602S200PF.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,004
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Product details
Overview
IDT71T75602S200PF from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz clock speed, 3.2 ns clock-to-data access, zero bus turnaround architecture, and pipelined burst read/write capability. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.
For engineers reviewing the IDT71T75602S200PF datasheet, IDT71T75602S200PF pinout, IDT71T75602S200PF application, or IDT71T75602S200PF equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) support, industrial temperature range (–40°C to +85°C), and IEEE 1149.1 JTAG boundary scan integration.
Technical Context
The IDT71T75602S200PF implements a fully synchronous, rising-edge-triggered architecture with registered address, data, and control inputs. Its internal burst counter supports 4-word linear or interleaved sequences controlled by the LBO pin, and ADV/LD governs external address load versus internal counter increment.
ZBTTM operation eliminates dead cycles between consecutive reads and writes via synchronized output buffer enable and pipelined output registers. The device integrates three chip enables (CE1, CE2, CE2) for depth expansion, individual byte write controls (BW1–BW4), and a synchronous ZZ sleep mode that gates CLK while retaining data.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18,874,368 bits); supports high-bandwidth parallel data paths in telecom buffers |
| Max Clock Frequency | 200 MHz; enables 5 ns cycle time for real-time packet buffering in 10G+ systems |
| Clock-to-Data Access | 3.2 ns; guarantees deterministic read latency critical for pipeline-synchronized interfaces |
| Supply Voltages | VDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); decoupled power domains reduce noise coupling |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded networking equipment |
| Burst Capability | 4-word linear/interleaved burst; reduces address bus traffic and improves throughput in sequential access |
| JTAG Interface | IEEE 1149.1 compliant; enables in-system test and debug without additional test logic |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Rising-edge-triggered master timing reference for all synchronous registers |
| A0–A18 | Address inputs | 19-bit address bus supporting 512K-depth addressing; latched on rising CLK edge with ADV/LD low |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data path; registered input/output with 2-cycle latency |
| R/W | Read/Write control | Synchronous signal defining load-cycle operation type; sampled with ADV/LD low to initiate access |
| ADV/LD | Address advance/load | Controls burst counter increment (HIGH) or external address load (LOW); determines burst sequence flow |
| LBO | Burst order select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence per IEEE Std 1149.1 |
| CE1, CE2, CE2 | Chip enables | Three independent enables (CE1/CE2 active-low, CE2 active-high) for multi-chip depth expansion |
| BW1–BW4 | Byte write enables | Four active-low signals enabling independent 9-bit byte writes; supports partial-word updates without masking |
| ZZ | Sleep mode | Synchronous HIGH input gating internal clock to minimize power while retaining memory contents |
| TMS, TDI, TCK, TDO | JTAG interface | Boundary scan test pins compliant with IEEE 1149.1; support production test and system-level diagnostics |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates dead cycles between read and write bursts, enabling continuous 200 MHz bus utilization without turnaround overhead |
| Internally synchronized OE | Removes need for external OE timing control; outputs automatically tri-state when not selected or during deselect cycles |
| 4-word burst counter | Reduces address bus activity by 75% for sequential accesses; LBO pin selects linear or interleaved addressing order |
| Individual byte write (BW1–BW4) | Enables precise 9-bit sub-word writes without disturbing adjacent bytes-critical for protocol header manipulation |
| Three chip enables | Supports seamless depth expansion across multiple devices using mixed polarity enables (CE1/CE2 low, CE2 high) |
| IEEE 1149.1 JTAG | Provides standardized boundary scan for PCB testability, interconnect verification, and in-system programming support |
Applications
| Packet Buffering in Switch ASICs | Line Card Memory in Telecom Routers |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switch fabric ASICs. IC Role / Device Role / Timing Role: High-speed synchronous SRAM acting as dual-port-accessible buffer memory with deterministic 3.2 ns read latency and zero-turnaround burst writes. Use Value: Enables full-line-rate packet processing at 10 Gbps+ by eliminating bus idle cycles between header inspection and payload forwarding operations. | Use Scenario: Serving as frame buffer and lookup table memory in carrier-grade optical line cards (e.g., OTN, SONET). IC Role / Device Role / Timing Role: ZBT™ SRAM providing pipelined burst reads/writes synchronized to system clock for real-time OAM packet generation and error correction. Use Value: Guarantees sub-5 ns timing margins under industrial temperature stress (–40°C to +85°C), ensuring reliability in uncontrolled telco cabinet environments. |
| Baseband Processing in Wireless BTS | Real-Time Protocol Acceleration Engine |
Use Scenario: Buffering IQ samples and control data between FPGA-based digital front-end and DSP cores in 4G/5G base transceiver stations. IC Role / Device Role / Timing Role: 2.5V I/O-compatible SRAM interfacing directly with FPGA I/O banks, leveraging BW1–BW4 for partial-symbol updates. Use Value: Reduces FPGA logic resource usage by offloading burst address generation and byte-select logic to on-chip counter and decode circuitry. | Use Scenario: Accelerating TCP/IP checksum calculation and TLS record encryption in hardware offload engines. IC Role / Device Role / Timing Role: Low-latency memory staging area for cryptographic engine input/output, synchronized via CEN pin for clock gating during idle intervals. Use Value: Achieves 200 MHz sustained throughput with ZZ sleep mode reducing dynamic power by >60% during packet gaps-extending thermal headroom. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Cypress CY7C1315KV18 | 1M × 18 organization, same 200 MHz speed, but no ZBTTM; requires external OE control and has no burst counter | Requires additional timing logic for burst sequencing and OE management; less suitable for zero-overhead bus turnaround | Select only if 1M×18 density suffices and ZBT™ timing is not required |
| ISSI IS61WV102432BLL | 1M × 32 organization, 166 MHz max, asynchronous OE, no JTAG, no ZZ sleep mode | Lacks pipelined outputs and burst capability; higher latency (10 ns) limits use in real-time packet pipelines | Consider only for cost-sensitive non-real-time buffering where industrial temp range is not mandatory |
Compared with CY7C1315KV18 and IS61WV102432BLL, the IDT71T75602S200PF delivers unique ZBTTM timing, integrated burst counter, and IEEE 1149.1 JTAG-making it the sole choice for deterministic, low-latency, high-throughput telecom and networking buffer applications.
Availability
IDT71T75602S200PF is available at Aetrix Electronics and suitable for packet buffering in switch ASICs, line card memory in telecom routers, and baseband processing in wireless BTS requiring stable component supply and long-term industrial-grade availability.
Supply support for IDT71T75602S200PF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.
The IDT71T75602S200PF belongs to Renesas' high-speed ZBT™ SRAM product line, engineered specifically for zero-latency, burst-capable memory subsystems in next-generation networking and telecom infrastructure.
FAQ
What is the memory configuration supported by the IDT71T75602S200PF?
The IDT71T75602S200PF is configured as 512K × 36-bit (18,874,368 bits). It does not support the 1M × 18 configuration - that is reserved for the companion IDT71T75802. This fixed 512K × 36 organization provides optimal bandwidth for 36-bit-wide data paths common in packet processing engines and telecom line cards.
Does the IDT71T75602S200PF support both linear and interleaved burst modes?
Yes, the IDT71T75602S200PF supports both linear and interleaved 4-word burst sequences. The LBO (Linear Burst Order) pin selects the mode: LOW configures linear addressing (A0, A1, A2, A3), HIGH selects interleaved (A0, A1, A2, A3 per IEEE Std 1149.1). This flexibility allows optimization for cache line alignment or DMA engine requirements in the target system.
How does the ZBTTM feature eliminate dead cycles in the IDT71T75602S200PF?
The ZBTTM (Zero Bus Turnaround) feature in the IDT71T75602S200PF removes dead cycles by synchronizing output buffer enable internally and pipelining read/write transitions. When a write burst ends, the next read burst begins immediately on the subsequent clock edge - no bus idle period is required. This is achieved through dedicated burst counter logic and registered OE behavior, delivering true 200 MHz sustained throughput.
What is the role of the ZZ pin on the IDT71T75602S200PF?
The ZZ pin on the IDT71T75602S200PF is a synchronous sleep mode input. When driven HIGH, it gates the internal clock distribution network, reducing dynamic power consumption to minimum while guaranteeing data retention. Unlike standby modes requiring reinitialization, ZZ sleep preserves all register states and memory contents, enabling instant wake-up on next valid clock edge - ideal for bursty traffic patterns in networking gear.
Can the IDT71T75602S200PF operate with separate core and I/O supplies?
Yes, the IDT71T75602S200PF uses separate 2.5 V supplies: VDD (core logic) and VDDQ (I/O drivers). Both tolerate ±5% variation (2.375 V to 2.625 V). This separation isolates switching noise from sensitive core logic, improves signal integrity on high-speed data buses, and allows interoperability with 2.5 V FPGA or ASIC I/O banks without level-shifting components.
IDT71T75602S200PF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
IDT71T75602S200PF FAQ
1.How can I place an order for IDT71T75602S200PF through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71T75602S200PF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71T75602S200PF reliable?
The price and inventory of IDT71T75602S200PF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71T75602S200PF is usually 5 days.
3.What payment methods are accepted for IDT71T75602S200PF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71T75602S200PF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71T75602S200PF?
IDT71T75602S200PF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71T75602S200PF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71T75602S200PF?
For technical support, including IDT71T75602S200PF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71T75602S200PF requirements.
6.How does Aetrix verify that IDT71T75602S200PF is sourced from the original manufacturer or authorized distributors?
All IDT71T75602S200PF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71T75602S200PF meets industry standards.
7.What is the process for return or replacement of IDT71T75602S200PF?
All IDT71T75602S200PF units undergo pre-shipment inspection (PSI). If there is an issue with IDT71T75602S200PF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71T75602S200PF part is unused and in its original packaging.
Return procedure for IDT71T75602S200PF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71T75602S200PF Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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Microchip Technology
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AT24C04C-SSHM-T
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