Renesas IDT71T75602S200PF8

Overview

IDT71T75602S200PF8 from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), supporting 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround (ZBT) architecture, and pipelined burst reads/writes. It serves as high-speed buffer memory in network packet processors, telecom line cards, and FPGA-based data path acceleration.

For engineers reviewing the IDT71T75602S200PF8 datasheet, IDT71T75602S200PF8 pinout, IDT71T75602S200PF8 application, or IDT71T75602S200PF8 equivalent, key selection criteria include ZBT timing compliance, 4-word burst capability (linear/interleaved), JTAG IEEE 1149.1 test support, 100-pin TQFP package, and industrial temperature range (–40°C to +85°C).

Technical Context

The IDT71T75602S200PF8 implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its ZBT feature eliminates dead cycles between consecutive read/write operations by overlapping bus turnaround with internal memory access.

Burst sequencing is controlled via ADV/LD and LBO pins: ADV/LD = LOW loads external address; ADV/LD = HIGH advances the on-chip counter; LBO selects linear or interleaved 4-word burst order. Output enable (OE) remains asynchronous for flexible bus control.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin plastic thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1372KV18 and AS7C33128PFS, the IDT71T75602S200PF8 delivers higher bandwidth via 36-bit width and ZBT, supports industrial temperature with JTAG, and provides independent VDDQ for I/O signal integrity-making it optimal for next-generation packet-processing subsystems.

Availability

IDT71T75602S200PF8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and FPGA-based acceleration requiring stable component supply across commercial and industrial temperature grades.

Supply support for IDT71T75602S200PF8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT71T75602S200PF8 belongs to Renesas' high-speed ZBT SRAM product line, engineered specifically for deterministic, low-latency memory buffering in packet-switched networks and real-time embedded systems.

FAQ

What is the memory organization and total capacity of the IDT71T75602S200PF8?

The IDT71T75602S200PF8 is configured as 512K × 36-bit, yielding a total capacity of 18,874,368 bits (18 Mbit). This organization supports 36-bit parallel data transfers and is optimized for high-bandwidth applications such as network packet buffering. The device also supports 1M × 18-bit configuration via pin strapping, but the IDT71T75602S200PF8 variant is fixed to 512K × 36.

Does the IDT71T75602S200PF8 support burst read and write operations?

Yes, the IDT71T75602S200PF8 supports 4-word burst operations in both linear and interleaved sequences, selected by the LBO pin. Burst mode is initiated using the ADV/LD signal: ADV/LD = LOW loads an external address, and ADV/LD = HIGH advances the internal counter. Each burst cycle delivers or accepts four consecutive words with a single address setup, reducing bus overhead in streaming applications.

What is the role of the ZZ pin on the IDT71T75602S200PF8?

The ZZ pin on the IDT71T75602S200PF8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device into a low-power retention state while maintaining data integrity. This feature reduces dynamic power consumption significantly during idle periods-critical for energy-constrained telecom and industrial systems. ZZ has an internal pulldown resistor, so it defaults to inactive (normal operation) when left unconnected.

How does the ZBTTM (Zero Bus Turnaround) feature improve system performance in the IDT71T75602S200PF8?

The ZBTTM feature in the IDT71T75602S200PF8 eliminates dead cycles between consecutive read and write operations by overlapping bus direction changes with internal memory access. Unlike conventional SRAMs that require explicit turnaround cycles, the IDT71T75602S200PF8 permits immediate back-to-back read-after-write or write-after-read transactions-reducing latency and increasing effective throughput in high-speed data pipelines like network switches and baseband processors.

Is the IDT71T75602S200PF8 compatible with JTAG boundary-scan testing?

Yes, the IDT71T75602S200PF8 integrates a full IEEE 1149.1-compliant JTAG boundary-scan interface with TMS, TDI, TCK, TDO, and optional TRST pins. This enables automated PCB test, in-system programming verification, and interconnect diagnostics without requiring additional test fixtures. The JTAG circuit is disabled by default unless explicitly enabled via pin configuration, ensuring no interference with normal operation.