Renesas IDT71T75602S200PFG

Overview

IDT71T75602S200PFG from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz clock speed, 3.2 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and pipelined burst read/write capability. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and no dead cycles between consecutive read/write operations.

For engineers reviewing the IDT71T75602S200PFG datasheet, IDT71T75602S200PFG pinout, IDT71T75602S200PFG application, or IDT71T75602S200PFG equivalent, key selection considerations include its 100-pin TQFP package, 2.5V core/I/O supply, JTAG IEEE 1149.1 compliance, industrial temperature support (–40°C to +85°C), and synchronous burst control via ADV/LD and LBO pins.

Technical Context

The IDT71T75602S200PFG implements a fully synchronous, pipelined interface with positive-edge-triggered address/control/data registers and an on-chip 4-word burst counter. Its ZBT architecture eliminates bus turnaround delay by allowing immediate read-after-write or write-after-read transitions without tri-state gaps.

It supports linear or interleaved burst sequences selected by the static LBO pin, uses three chip enables (CE1/CE2/CE2) for depth expansion, and integrates boundary-scan JTAG (TMS/TDI/TCK/TDO/TRST) for testability. Sleep mode is controlled synchronously via the ZZ input, and output enable (OE) remains asynchronous but can be tied low for simplified operation.

Key Specifications

Pinout & Package

Packaged in a JEDEC-standard 14 mm × 20 mm 100-pin thin quad flatpack (TQFP), the IDT71T75602S200PFG features 36 bidirectional data I/Os (I/O0–I/O31, I/OP1–I/OP4), 19 address inputs (A0–A18), four byte write enables (BW1–BW4), and dedicated JTAG test pins (TMS/TDI/TCK/TDO/TRST).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1315KV18 and AS7C331024B, the IDT71T75602S200PFG uniquely delivers 512K × 36-bit ZBT operation with integrated JTAG, sleep mode, and programmable burst order - making it optimal for new industrial and telecom designs demanding deterministic latency and production testability.

Availability

IDT71T75602S200PFG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and radar signal processing applications requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for IDT71T75602S200PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT71T75602S200PFG belongs to Renesas' legacy IDT synchronous SRAM product line, engineered specifically for high-performance networking and real-time embedded systems requiring zero-bus-turnaround memory access and robust test infrastructure.

FAQ

What memory configuration does the IDT71T75602S200PFG support?

The IDT71T75602S200PFG is configured as 512K × 36-bit (18,874,368 bits). It does not support the 1M × 18-bit variant - that is implemented in the pin-compatible IDT71T75802. The IDT71T75602S200PFG's address bus uses A0–A18 (19 bits) and data bus uses I/O0–I/O31 plus I/OP1–I/OP4 (36 bits), confirming its fixed 512K × 36 organization.

Does the IDT71T75602S200PFG support both linear and interleaved burst modes?

Yes, the IDT71T75602S200PFG supports both burst orders via the LBO (Linear Burst Order) pin. When LBO is low, it executes linear bursts (A0, A1, A2, A3); when high, it performs interleaved bursts (A0, A1, A2, A3 per IEEE standard). This selection is static and must remain stable during operation - changing LBO mid-burst is undefined.

Is JTAG functionality available in the TQFP package of the IDT71T75602S200PFG?

Yes, JTAG is fully supported in the 100-pin TQFP package of the IDT71T75602S200PFG. Pins 38 (TMS), 39 (TDI), 43 (TCK), and 42 (TDO) are assigned to JTAG signals, and TRST (pin 41) is included as an optional reset. All JTAG pins have internal pull-ups except ZZ, which has an internal pulldown - enabling functional boundary-scan without external biasing.

What is the role of the ADV/LD pin in the IDT71T75602S200PFG?

The ADV/LD pin in the IDT71T75602S200PFG controls burst sequencing: sampled low at the rising CLK edge, it loads a new external address; sampled high, it advances the internal 4-word burst counter. This dual function enables seamless transition between random and sequential access - critical for packet buffering where header reads (random) alternate with payload writes (burst).

How does the IDT71T75602S200PFG handle power-down and data retention?

The IDT71T75602S200PFG enters low-power sleep mode when ZZ is driven high synchronously. In this state, the internal clock is gated, dynamic power drops significantly, and data retention is guaranteed across the full industrial temperature range (–40°C to +85°C). Core and I/O supplies (VDD/VDDQ) must remain active; retention current is characterized but not production-tested per datasheet note.