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Renesas IDT71T75602S200PFG8
- Part No.:
- IDT71T75602S200PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
IDT71T75602S200PFG8.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
IDT71T75602S200PFG8 from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz operation (3.2 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst read/write capability. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless write-read transitions.
For engineers reviewing the IDT71T75602S200PFG8 datasheet, IDT71T75602S200PFG8 pinout, IDT71T75602S200PFG8 application, or IDT71T75602S200PFG8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) support, industrial temperature range (–40°C to +85°C), and IEEE 1149.1 JTAG boundary scan integration.
Technical Context
The IDT71T75602S200PFG8 implements a fully synchronous, clock-edge-triggered architecture with address/control/data registers aligned to the rising CLK edge. Its ZBT™ core eliminates dead cycles between consecutive reads and writes via internal burst counter management and ADV/LD-controlled address loading or incrementing.
Burst sequencing is selectable via static LBO pin (linear or interleaved), and output enable (OE) is asynchronous while all other inputs-including CE1/CE2/CE2, R/W, BW1–BW4, and CEN-are synchronous. The device integrates IEEE 1149.1-compliant JTAG for boundary scan testing and supports sleep mode via ZZ input.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18,874,368-bit capacity); supports only this configuration per datasheet pinout and functional block diagram. |
| Max Clock Frequency | 200 MHz - enables 5 ns cycle time; clock-to-data access is 3.2 ns, critical for pipeline-aligned data transfers. |
| ZBT™ Architecture | Zero Bus Turnaround: no idle cycles between write-read or read-write transitions, enabling continuous burst streaming. |
| Burst Capability | 4-word burst (interleaved or linear); initiated by ADV/LD=HIGH after initial load, reducing address bus overhead. |
| Supply Voltages | VDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); separate supplies allow I/O voltage domain isolation. |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full range per Absolute Maximum Ratings table. |
| JTAG Compliance | IEEE 1149.1 compliant with TMS/TDI/TCK/TDO/TRST pins; TRST optional and internally pulled up in BGA, but present in TQFP pinout. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked via corner notch; top-side marking includes "71T75602" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | 19-bit synchronous address bus; latched on rising CLK when ADV/LD=LOW and chip enabled. |
| CLK | System Clock Input | Rising-edge-triggered master clock; all synchronous timing referenced to this edge (except OE). |
| R/W | Read/Write Control | Synchronous signal defining cycle type; determines whether loaded address initiates read (H) or write (L). |
| ADV/LD | Burst Address Control | LOW loads new external address; HIGH advances internal burst counter - enables 4-word burst without address bus activity. |
| LBO | Burst Order Select | Static input: LOW = linear burst (A0, A1, A2, A3), HIGH = interleaved (A0, A2, A1, A3) per datasheet tables. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Bus | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing predictability at 200 MHz. |
| CE1, CE2, CE2 | Chip Enables | Three independent enables: CE1/CE2 active-low, CE2 active-high; any false enable blocks new operations. |
| BW1–BW4 | Byte Write Enables | Four active-low signals controlling 9-bit byte lanes; allows partial-word writes without masking logic. |
| ZZ | Sleep Mode Input | Active-HIGH synchronous entry into low-power retention mode; CLK gated internally, data retained. |
| TMS/TDI/TCK/TDO/TRST | JTAG Test Interface | IEEE 1149.1 boundary scan; TRST optional reset, internally pulled up; all JTAG pins present in TQFP layout (pins 38–43, 66). |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates bus idle cycles between consecutive read/write operations, enabling sustained 200 MHz throughput in burst pipelines. |
| Internally Synchronized OE | Output buffer enable is synchronized internally - removes need for external OE timing control in high-speed designs. |
| Single R/W Pin | Reduces control bus complexity versus separate RD/WR signals; simplifies FPGA or ASIC interface logic. |
| 4-Word Burst Counter | Hardware burst counter increments on ADV/LD=HIGH, delivering four sequential data words per address load. |
| Three Chip Enables | Supports depth expansion without external decoding logic; CE1/CE2 (active-low) and CE2 (active-high) provide flexible bank selection. |
| 2.5V Core + I/O Supplies | Dual 2.5V domains (VDD/VDDQ) allow independent power management and noise isolation between core logic and I/O drivers. |
Applications
| Packet Buffer in Network Switch ASIC | Line Card Memory in Telecom Equipment |
|---|---|
Use Scenario: Storing ingress/egress packet headers and payloads in multi-gigabit Ethernet switch fabric. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfacing directly to switch fabric controller with pipelined burst reads/writes. Use Value: ZBT™ architecture ensures zero-cycle turnaround between header read and payload write, maximizing fabric utilization at 200 MHz. | Use Scenario: Frame buffering in OC-192/STM-64 SONET/SDH line cards handling 10 Gbps serial streams. IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store between serializer/deserializer and framer ASIC. Use Value: 3.2 ns clock-to-data access and 4-word burst reduce FIFO depth requirements and simplify timing closure. |
| Real-Time Signal Processing Buffer | Industrial PLC Data Exchange Memory |
Use Scenario: Temporary storage of sensor samples and control outputs in radar DSP subsystems with strict jitter constraints. IC Role / Device Role / Timing Role: Deterministic-latency memory for ping-pong buffering between ADC/DAC interfaces and processing cores. Use Value: Fully registered inputs/outputs and 200 MHz clocking guarantee sub-5 ns timing repeatability across temperature. | Use Scenario: Shared memory between motion controller CPU and fieldbus communication coprocessor in modular PLC backplanes. IC Role / Device Role / Timing Role: Dual-ported buffer supporting concurrent read (CPU) and write (coprocessor) via CE partitioning. Use Value: Three chip enables (CE1/CE2/CE2) allow hardware-based bank arbitration without software intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1305KV18-200BZI | 1M × 18-bit organization (same density), 200 MHz, 2.5V, QDR-II+ architecture with separate read/write ports. | QDR-II+ supports concurrent read/write; IDT71T75602S200PFG8 uses single-port ZBT™ with burst pipelining. | Select CY7C1305KV18-200BZI if true simultaneous access is required; IDT71T75602S200PFG8 suits cost-sensitive ZBT™-compatible legacy systems. |
| AS7C33128PFS-20BIN | 1M × 32-bit, 200 MHz, 2.5V, standard sync SRAM (no ZBT™ or burst counter); asynchronous OE. | Lacks ZBT™ zero-turnaround and burst addressing - requires full address bus activity per word transfer. | Choose AS7C33128PFS-20BIN only if ZBT™ timing is unnecessary and pin count permits wider 32-bit bus; IDT71T75602S200PFG8 delivers higher effective bandwidth per address cycle. |
Compared with CY7C1305KV18-200BZI and AS7C33128PFS-20BIN, the IDT71T75602S200PFG8 provides deterministic ZBT™ burst timing and integrated JTAG testability in a proven 512K×36 configuration, making it optimal for upgrade paths in telecom and networking equipment where bus turnaround latency must be eliminated.
Availability
IDT71T75602S200PFG8 is available at Aetrix Electronics and suitable for network packet processors, telecom line cards, real-time signal processing buffers, and industrial PLC data exchange requiring stable component supply and long-term industrial temperature support.
Supply support for IDT71T75602S200PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The IDT71T75602S200PFG8 belongs to Renesas' legacy IDT synchronous SRAM product line, designed specifically for high-throughput, low-latency buffering in communications infrastructure where ZBT™ timing determinism is critical.
FAQ
What memory organization does the IDT71T75602S200PFG8 support?
The IDT71T75602S200PFG8 supports only the 512K × 36-bit configuration (18,874,368 bits total). Unlike the related 71T75802, it does not support 1M × 18-bit mode - this is confirmed by its dedicated pinout (A0–A18, 36 I/O lines), functional block diagram, and datasheet labeling. Attempting 1M × 18 operation would violate address decoding and I/O mapping.
Does the IDT71T75602S200PFG8 support both linear and interleaved burst modes?
Yes, the IDT71T75602S200PFG8 supports both burst sequences via the LBO pin: LBO = LOW selects linear order (A0, A1, A2, A3), and LBO = HIGH selects interleaved order (A0, A2, A1, A3). This behavior is defined in the Interleaved and Linear Burst Sequence Tables and is static - LBO must remain stable during burst execution.
How does the IDT71T75602S200PFG8 handle chip deselection and bus turnaround?
The IDT71T75602S200PFG8 implements a two-cycle deselect: when any chip enable becomes inactive (CE1 or CE2 HIGH, or CE2 LOW) while ADV/LD is LOW, the data bus enters high-impedance state two clocks later. This ensures clean bus release without contention, and ZBT™ eliminates dead cycles between successive valid operations - only deselect events introduce latency.
Is JTAG boundary scan available on the IDT71T75602S200PFG8 in TQFP package?
Yes, the IDT71T75602S200PFG8 includes full IEEE 1149.1 JTAG support in the TQFP-100 package. Pins 38 (TMS), 39 (TDI), 42 (TCK), 43 (TDO), and 66 (TRST) are assigned to JTAG functions per the PKG100 pin configuration diagram and Pin Description Summary table.
What is the role of the ZZ pin on the IDT71T75602S200PFG8?
The ZZ pin on the IDT71T75602S200PFG8 is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces power consumption to the minimum retention level while preserving memory contents. ZZ has an internal pulldown resistor, so it defaults to inactive (normal operation) when left unconnected.
IDT71T75602S200PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
IDT71T75602S200PFG8 FAQ
1.How can I place an order for IDT71T75602S200PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71T75602S200PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71T75602S200PFG8 reliable?
The price and inventory of IDT71T75602S200PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71T75602S200PFG8 is usually 5 days.
3.What payment methods are accepted for IDT71T75602S200PFG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71T75602S200PFG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71T75602S200PFG8?
IDT71T75602S200PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71T75602S200PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71T75602S200PFG8?
For technical support, including IDT71T75602S200PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71T75602S200PFG8 requirements.
6.How does Aetrix verify that IDT71T75602S200PFG8 is sourced from the original manufacturer or authorized distributors?
All IDT71T75602S200PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71T75602S200PFG8 meets industry standards.
7.What is the process for return or replacement of IDT71T75602S200PFG8?
All IDT71T75602S200PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71T75602S200PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71T75602S200PFG8 part is unused and in its original packaging.
Return procedure for IDT71T75602S200PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71T75602S200PFG8 Tags
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