Renesas IDT71T75602S200PFGI
- Part No.:
- IDT71T75602S200PFGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
IDT71T75602S200PFGI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71T75602S200PFGI from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz clock speed, 3.2 ns clock-to-data access, zero bus turnaround (ZBT) architecture, and pipelined burst outputs. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless read/write transitions.
For engineers reviewing the IDT71T75602S200PFGI datasheet, IDT71T75602S200PFGI pinout, IDT71T75602S200PFGI application, or IDT71T75602S200PFGI equivalent, key selection criteria include ZBT timing compliance, 4-word interleaved/linear burst capability, JTAG IEEE 1149.1 support, industrial temperature range (–40°C to +85°C), and TQFP-100 packaging with 2.5V I/O supply (VDDQ).
Technical Context
The IDT71T75602S200PFGI implements a fully synchronous, clock-edge-triggered architecture with input/output registers aligned to the rising edge of CLK. Its internal burst counter supports 4-word sequences controlled by ADV/LD and LBO, enabling linear or interleaved addressing without external logic.
ZBT operation eliminates dead cycles between consecutive reads and writes via internally synchronized output enable and pipelined data paths. The device uses three chip enables (CE1, CE2, CE2) for depth expansion and includes a dedicated ZZ sleep mode pin for low-power retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18,874,368-bit capacity); supports 1M × 18-bit configuration via pin strapping |
| Max Clock Frequency | 200 MHz - enables 5 ns cycle time for high-throughput buffering in packet-switching applications |
| Access Time | 3.2 ns clock-to-data - guarantees deterministic read latency for real-time traffic shaping |
| Burst Capability | 4-word burst (interleaved or linear) - reduces address bus overhead and improves bandwidth efficiency |
| Supply Voltages | VDD = 2.5 V ±5% (core); VDDQ = 2.5 V ±5% (I/O) - ensures signal integrity and compatibility with 2.5V logic families |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade deployment in base stations and edge routers |
| JTAG Interface | IEEE 1149.1 compliant - enables boundary-scan testing and system-level debug without additional test fixtures |
Pinout & Package
Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pinout validated per IDT document 5313 drw 02r (PKG100, 512K×36 configuration).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock Input | Rising-edge-triggered master timing reference for all synchronous operations |
| A0–A18 | Address Inputs | 19-bit address bus for 512K-word addressing; latched on rising CLK with ADV/LD low |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data path with registered inputs/outputs; supports byte-write via BW1–BW4 |
| R/W | Read/Write Control | Synchronous command determining load-cycle direction; sampled at rising CLK with ADV/LD low |
| ADV/LD | Burst Counter Control | Loads new external address (LOW) or advances internal burst counter (HIGH) |
| LBO | Burst Order Select | Static input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence |
| CE1, CE2, CE2 | Chip Enables | Three independent enables (CE1/CE2 active-low, CE2 active-high) for multi-chip depth expansion |
| ZZ | Sleep Mode | Active-high synchronous entry into low-power retention mode; preserves data with gated clock |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Architecture | Eliminates bus turnaround dead cycles between read/write transitions, enabling continuous data streaming |
| Pipelined Outputs | Internally synchronized OE eliminates need for external OE timing control; outputs tri-state on clock edge |
| Individual Byte Write | BW1–BW4 allow selective 9-bit byte writes without disturbing other bytes - critical for partial packet updates |
| On-Chip Burst Counter | Generates 4-word burst addresses autonomously; reduces CPU address bus activity and controller overhead |
| JTAG Boundary Scan | IEEE 1149.1-compliant test interface enables PCB-level interconnect verification and in-system debugging |
Applications
| Network Packet Buffering | Telecom Line Card Memory |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in Layer 2/3 switches. IC Role / Device Role / Timing Role: High-speed dual-port buffer with zero-turnaround read/write for back-to-back packet processing. Use Value: 200 MHz operation and 3.2 ns access enable line-rate throughput at 10 Gbps with deterministic latency. | Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers and optical transport equipment. IC Role / Device Role / Timing Role: Synchronous SRAM providing jitter-free data staging between framer and processor subsystems. Use Value: Industrial temperature rating and ZBT timing ensure reliable operation in uncooled chassis environments. |
| Base Station Baseband Processing | Industrial Real-Time Controller Cache |
Use Scenario: Temporary storage of OFDMA symbols and channel estimation data in LTE/5G remote radio units. IC Role / Device Role / Timing Role: Burst-capable memory interfacing with DSP cores requiring low-latency, high-bandwidth access. Use Value: 4-word interleaved burst mode matches FFT/IFFT data stride patterns, improving DMA efficiency. | Use Scenario: Deterministic instruction/data caching in motion-control PLCs and CNC systems. IC Role / Device Role / Timing Role: Low-jitter, fully synchronous SRAM supporting hard real-time task scheduling. Use Value: Clock enable (CEN) and sleep mode (ZZ) allow precise power gating during idle intervals without data loss. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-200BZXI | 1M × 18-bit organization; no ZBT architecture; 200 MHz max but requires external OE control | Lacks zero-bus-turnaround; higher latency in mixed read/write workloads | Choose when 1M×18 density suffices and ZBT is not required for system timing budget |
| AS7C33128P-20JCIN | 32M-bit async SRAM; no burst counter, no JTAG, no pipelined outputs; 20 ns access | Asynchronous interface increases controller complexity; unsuitable for deterministic timing-critical systems | Consider only for cost-sensitive, non-real-time buffering where latency variability is acceptable |
Compared with CY7C1315KV18-200BZXI and AS7C33128P-20JCIN, the IDT71T75602S200PFGI delivers guaranteed ZBT timing, integrated burst control, and JTAG testability - essential for telecom infrastructure and high-reliability embedded systems where bus efficiency and debug visibility are design requirements.
Availability
IDT71T75602S200PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial real-time controller cache requiring stable component supply across extended product lifecycles.
Supply support for IDT71T75602S200PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The IDT71T75602S200PFGI belongs to Renesas' legacy IDT synchronous SRAM portfolio, designed specifically for high-performance networking and communications equipment demanding deterministic timing, low latency, and robust testability.
FAQ
What is the memory organization supported by the IDT71T75602S200PFGI?
The IDT71T75602S200PFGI supports a 512K × 36-bit configuration (18 Mbit total), and can be configured as 1M × 18-bit via pin strapping. This dual-mode flexibility allows system designers to optimize data bus width and address space based on controller interface requirements while using the same IDT71T75602S200PFGI footprint.
Does the IDT71T75602S200PFGI support burst read and write operations?
Yes, the IDT71T75602S200PFGI features an on-chip 4-word burst counter controlled by ADV/LD and LBO pins. It supports both linear and interleaved burst sequences, enabling efficient sequential access without repeated address setup - a key advantage for packet payload handling and FFT data movement in the IDT71T75602S200PFGI.
What is the purpose of the ZZ pin on the IDT71T75602S200PFGI?
The ZZ pin on the IDT71T75602S200PFGI is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device in its lowest power-consumption state while retaining memory contents. This feature is essential for power-aware designs such as battery-backed telecom modules where the IDT71T75602S200PFGI must maintain data integrity during standby.
How does the ZBTTM architecture improve system performance in the IDT71T75602S200PFGI?
The ZBTTM (Zero Bus Turnaround) architecture in the IDT71T75602S200PFGI eliminates dead cycles between consecutive read and write operations by synchronizing output enable internally. This allows immediate bus direction reversal - critical for high-efficiency packet buffering where the IDT71T75602S200PFGI sustains full bandwidth during mixed-access workloads without pipeline stalls.
Is JTAG boundary scan supported on the IDT71T75602S200PFGI, and what standard does it follow?
Yes, the IDT71T75602S200PFGI includes a fully compliant IEEE 1149.1 JTAG boundary scan interface with TMS, TDI, TCK, TDO, and optional TRST pins. This enables automated PCB interconnect testing and in-system debug - a verified capability documented in the IDT71T75602S200PFGI datasheet and used in production test flows for telecom hardware.
IDT71T75602S200PFGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
IDT71T75602S200PFGI FAQ
1.How can I place an order for IDT71T75602S200PFGI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71T75602S200PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71T75602S200PFGI reliable?
The price and inventory of IDT71T75602S200PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71T75602S200PFGI is usually 5 days.
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Once your IDT71T75602S200PFGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71T75602S200PFGI?
For technical support, including IDT71T75602S200PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71T75602S200PFGI requirements.
6.How does Aetrix verify that IDT71T75602S200PFGI is sourced from the original manufacturer or authorized distributors?
All IDT71T75602S200PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71T75602S200PFGI meets industry standards.
7.What is the process for return or replacement of IDT71T75602S200PFGI?
All IDT71T75602S200PFGI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71T75602S200PFGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71T75602S200PFGI part is unused and in its original packaging.
Return procedure for IDT71T75602S200PFGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71T75602S200PFGI Tags

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