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Renesas IDT71T75602S200PFGI8

Part No.:
IDT71T75602S200PFGI8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
AetrixIDT71T75602S200PFGI8.pdf
Description:
IC SRAM 18MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
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Inventory:1,869

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Product details

Overview

IDT71T75602S200PFGI8 from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz clock speed (3.2 ns clock-to-data access), zero bus turnaround architecture, and pipelined burst read/write capability. It serves as high-speed buffer memory in network packet processors and telecom line cards requiring deterministic latency and seamless read-write transitions.

For engineers reviewing the IDT71T75602S200PFGI8 datasheet, IDT71T75602S200PFGI8 pinout, IDT71T75602S200PFGI8 application, or IDT71T75602S200PFGI8 equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, industrial temperature support (–40°C to +85°C), JTAG IEEE 1149.1 test interface, and 2.5V core/I/O supply requirements.

Technical Context

The IDT71T75602S200PFGI8 implements a fully synchronous, clock-edge-triggered architecture with registered address, data, and control inputs. Its ZBT™ operation eliminates dead cycles between consecutive reads and writes by overlapping bus turnaround with internal memory access.

Burst sequencing is controlled via LBO pin (linear/interleaved), ADV/LD (load/advance), and a 4-word burst counter. Output enable (OE) is asynchronous, while all other signals-including CE1/CE2/CE2, R/W, CEN, BW1–BW4, and ZZ-are synchronous to the rising CLK edge.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization512K × 36-bit (18,874,368 bits); supports depth expansion via three chip enables
Clock Frequency200 MHz maximum; enables 3.2 ns clock-to-data access for real-time packet buffering
Supply VoltagesVDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); separate power domains reduce noise coupling
Burst Capability4-word interleaved or linear burst; initiated by ADV/LD high and controlled by LBO static input
Operating Temperature–40°C to +85°C (industrial grade); validated for telecom infrastructure deployment
JTAG InterfaceIEEE 1149.1 compliant; includes TMS, TDI, TCK, TDO, and optional TRST on BGA only (not applicable to TQFP)
Power ManagementZZ pin enables synchronous sleep mode with guaranteed data retention and lowest power consumption

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead-free and RoHS-compliant (PFGI8 suffix denotes industrial-grade TQFP).

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address Inputs19-bit synchronous address bus; latched on rising CLK when ADV/LD = LOW and chip enabled
CLKSystem Clock InputRising-edge-triggered master timing reference; all synchronous operations referenced to this edge
R/WRead/Write ControlSynchronous signal defining cycle type; determines data direction two clocks after load
ADV/LDBurst Counter ControlLOW loads new external address; HIGH advances internal burst counter for sequential access
LBOBurst Order SelectStatic input selecting linear (LOW) or interleaved (HIGH) 4-word burst sequence
CE1, CE2, CE2Chip EnablesThree independent enables (CE1/CE2 active-low, CE2 active-high) for flexible depth expansion
BW1–BW4Byte Write EnablesFour active-low signals controlling 9-bit byte writes; supports partial-word updates without masking
OEOutput EnableAsynchronous control; drives I/O pins to high-impedance when HIGH, eliminating need for timing-critical gating
ZZSleep Mode InputActive-HIGH synchronous entry into low-power retention mode; internal clock gating preserves data
I/O0–I/O31, I/OP1–I/OP4Data I/O Bus36-bit bidirectional synchronous bus; registered inputs/outputs ensure clean setup/hold timing at 200 MHz

Key Features

FeatureDesign Value
ZBTTM ArchitectureEliminates bus turnaround dead cycles between read and write operations, enabling continuous 200 MHz throughput
Pipelined OutputsInternally synchronized output buffer enable removes external OE timing constraints and simplifies system-level timing closure
4-Word Burst CounterReduces address bus traffic by generating four sequential addresses per ADV/LD assertion-critical for cache-line-aligned access
Individual Byte WriteEnables precise 9-bit sub-word updates via BW1–BW4, avoiding full-word read-modify-write overhead in protocol processing
JTAG Boundary ScanIEEE 1149.1-compliant test interface supports production testing and board-level diagnostics without additional test fixtures

Applications

Network Packet BufferingTelecom Line Card Memory

Use Scenario: Storing and forwarding variable-length Ethernet/IP packets in high-throughput switches and routers.

IC Role / Device Role / Timing Role: High-speed dual-port buffer providing zero-latency read-after-write for header parsing and payload reassembly.

Use Value: ZBT™ architecture sustains 200 MHz sustained bandwidth during mixed read/write bursts, reducing packet jitter and queue overflow.

Use Scenario: Frame buffering in SONET/SDH add-drop multiplexers and optical transport platforms.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as elastic store for rate-adaptation between OC-192 line interfaces and backplane buses.

Use Value: 3.2 ns clock-to-data access and industrial temperature rating ensure deterministic latency under thermal stress in chassis-mounted line cards.

Baseband Processing CacheIndustrial Real-Time Controller

Use Scenario: Temporary storage of FFT coefficients and channel estimation data in LTE/5G baseband FPGAs.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory interfaced directly to FPGA fabric via dedicated 36-bit bus.

Use Value: Pipelined outputs and registered I/O eliminate external timing buffers, simplifying PCB layout and signal integrity design at 200 MHz.

Use Scenario: Deterministic data logging and motion control loop buffering in CNC machines and PLCs.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing reliable, non-volatile-retained buffer memory during voltage transients.

Use Value: ZZ sleep mode reduces active power to minimum while preserving contents-enabling fail-safe state retention during brownouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1305KV18-200BZI1M × 18 organization (same density), 2.5V core/I/O, but no ZBT™ architecture-requires external bus turnaround managementLacks zero-bus-turnaround; introduces 1–2 cycle penalty between read/write transitionsSelect when ZBT™ is not required and 1M × 18 addressing fits system architecture
AS7C3256A-20JCAsynchronous 32K × 8 SRAM; no clock, no burst, no JTAG; 5V tolerant; slower access (20 ns)No pipelining, no burst, no synchronous control-unsuitable for high-speed deterministic systemsOnly consider for legacy 5V designs where timing margin allows asynchronous operation

Compared with CY7C1305KV18-200BZI and AS7C3256A-20JC, the IDT71T75602S200PFGI8 delivers deterministic 200 MHz throughput via ZBT™ and burst pipelining-critical for packet processing and telecom buffering-while the alternatives trade performance for simplicity or legacy compatibility.

Availability

IDT71T75602S200PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card memory, and industrial real-time controller applications requiring stable component supply, long-term lifecycle support, and industrial temperature qualification.

Supply support for IDT71T75602S200PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and communications markets.

The IDT71T75602S200PFGI8 belongs to Renesas' legacy IDT synchronous SRAM product line, engineered specifically for high-bandwidth, low-latency buffering in networking and telecom infrastructure where deterministic timing and bus efficiency are critical.

FAQ

What is the memory configuration supported by the IDT71T75602S200PFGI8?

The IDT71T75602S200PFGI8 is configured as 512K × 36-bit (18,874,368 bits), delivering 36-bit wide data access. It does not support the 1M × 18 configuration - that is exclusive to the pin-compatible IDT71T75802 variant. The IDT71T75602S200PFGI8 uses address pins A0–A18 and provides 36 I/O lines (I/O0–I/O31 plus I/OP1–I/OP4) to realize this organization.

Does the IDT71T75602S200PFGI8 support burst read and write operations?

Yes, the IDT71T75602S200PFGI8 supports 4-word synchronous burst operations in both linear and interleaved sequences. Burst mode is enabled via the ADV/LD pin (HIGH to advance counter) and selected via the LBO pin (LOW = linear, HIGH = interleaved). Each burst cycle delivers four consecutive words starting from the loaded address, with data valid two clocks after initiation - a core feature of its ZBT™ architecture.

What is the function of the ZZ pin on the IDT71T75602S200PFGI8?

On the IDT71T75602S200PFGI8, the ZZ pin is a synchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device into its lowest power-consumption state while guaranteeing data retention. The part resumes normal operation synchronously on the next rising CLK edge after ZZ returns LOW. This feature is essential for power-aware telecom and industrial systems requiring rapid wake-up with state preservation.

Is JTAG boundary scan available on the IDT71T75602S200PFGI8 in TQFP packaging?

Yes, the IDT71T75602S200PFGI8 includes full IEEE 1149.1 JTAG boundary scan functionality in its TQFP-100 package (PFGI8). Pins TMS, TDI, TCK, and TDO are assigned to pins 38, 39, 43, and 42 respectively (labeled NC/TMS, NC/TDI, NC/TCK, NC/TDO in the pinout diagram). TRST is not implemented in TQFP; it is BGA-only. JTAG operates independently of memory functions and supports production test and debug.

How does the IDT71T75602S200PFGI8 handle byte-level writes?

The IDT71T75602S200PFGI8 supports individual 9-bit byte writes using four dedicated active-low inputs: BW1 (I/O0–I/O7, I/OP1), BW2 (I/O8–I/O15, I/OP2), BW3 (I/O16–I/O23, I/OP3), and BW4 (I/O24–I/O31, I/OP4). During a write cycle, only bytes with their corresponding BWx asserted LOW are updated; others retain prior content. This eliminates read-modify-write overhead and is especially valuable in protocol header manipulation and partial-word updates.

IDT71T75602S200PFGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR (ZBT)
Memory Size:
18Mbit
Memory Organization:
512K x 36
Memory Interface:
Parallel
Clock Frequency:
200 MHz
Write Cycle Time - Word, Page:
-
Access Time:
3.2 ns
Voltage - Supply:
2.375V ~ 2.625V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

IDT71T75602S200PFGI8 FAQ

1.How can I place an order for IDT71T75602S200PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71T75602S200PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71T75602S200PFGI8 reliable?

The price and inventory of IDT71T75602S200PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71T75602S200PFGI8 is usually 5 days.

3.What payment methods are accepted for IDT71T75602S200PFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71T75602S200PFGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71T75602S200PFGI8?

IDT71T75602S200PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71T75602S200PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71T75602S200PFGI8?

For technical support, including IDT71T75602S200PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71T75602S200PFGI8 requirements.

6.How does Aetrix verify that IDT71T75602S200PFGI8 is sourced from the original manufacturer or authorized distributors?

All IDT71T75602S200PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71T75602S200PFGI8 meets industry standards.

7.What is the process for return or replacement of IDT71T75602S200PFGI8?

All IDT71T75602S200PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71T75602S200PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71T75602S200PFGI8 part is unused and in its original packaging.

Return procedure for IDT71T75602S200PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71T75602S200PFGI8 Tags

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