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Renesas IDT71T75602S200PFI
- Part No.:
- IDT71T75602S200PFI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
IDT71T75602S200PFI.pdf
- Description:
- IC SRAM 18MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:1,186
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Product details
Overview
IDT71T75602S200PFI from Renesas Electronics is a 2.5V synchronous ZBT™ SRAM with 512K × 36-bit organization (18 Mbit), 200 MHz clock speed, 3.2 ns clock-to-data access, zero bus turnaround architecture, and industrial temperature support (–40°C to +85°C). It serves as a high-bandwidth data buffer in network packet processors and telecom line cards requiring burst pipelined reads/writes.
For engineers reviewing the IDT71T75602S200PFI datasheet, IDT71T75602S200PFI pinout, IDT71T75602S200PFI application, or IDT71T75602S200PFI equivalent, key selection criteria include ZBT™ burst timing compliance, TQFP-100 package compatibility, 2.5V I/O supply (VDDQ) requirements, and JTAG IEEE 1149.1 test interface support for system-level validation.
Technical Context
The IDT71T75602S200PFI implements a fully synchronous, pipelined architecture with positive-edge-triggered address/control/data registers and an on-chip 4-word burst counter. Its ZBT™ operation eliminates dead cycles between read/write transitions by overlapping bus control and data transfer phases.
It supports linear or interleaved burst sequences via static LBO pin control, uses ADV/LD to load external addresses or increment the internal counter, and features three chip enables (CE1, CE2, CE2) with two-cycle deselect timing. The device integrates IEEE 1149.1 JTAG boundary scan and synchronous sleep mode (ZZ input).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 512K × 36-bit (18,874,368 bits); supports high-density data buffering without external width expansion |
| Clock Frequency | 200 MHz maximum; enables 5 ns cycle time for high-throughput packet processing pipelines |
| Access Time | 3.2 ns clock-to-data (tCD); guarantees deterministic read latency for real-time traffic scheduling |
| Supply Voltages | VDD = 2.5 V ±5% (core), VDDQ = 2.5 V ±5% (I/O); decoupled power domains reduce noise coupling |
| Operating Temperature | –40°C to +85°C; qualified for industrial-grade embedded networking equipment |
| Burst Capability | 4-word burst (linear/interleaved); reduces address bus overhead and improves effective bandwidth by 4× |
| JTAG Support | IEEE 1149.1 compliant; enables in-system testability and board-level diagnostics without additional hardware |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pinout validated per IDT71T75602 PKG100 drawing (Rev. 6.42).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CLK | Clock input | Positive-edge-triggered master timing reference for all synchronous operations; defines tCYC = 5 ns at 200 MHz |
| A0–A18 | Address inputs | 19-bit address bus supporting 512K depth; sampled synchronously with CLK, ADV/LD low, and valid chip enables |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data path; registered input/output with 2-cycle pipeline delay |
| R/W | Read/Write control | Synchronous signal determining cycle type; latched at rising CLK edge with ADV/LD low to initiate load operation |
| ADV/LD | Address advance/load | Controls burst counter (HIGH) or loads new external address (LOW); determines burst sequence initiation point |
| LBO | Burst order select | Static input selecting linear (LOW) or interleaved (HIGH) burst addressing; must remain stable during operation |
| CE1, CE2, CE2 | Chip enables | Three independent enables (CE1/CE2 active-low, CE2 active-high); enable depth expansion with two-cycle tri-state delay |
| ZZ | Sleep mode | Synchronous entry to lowest-power state; gates internal clock while retaining memory contents |
| TMS, TDI, TCK, TDO | JTAG interface | Boundary-scan test pins compliant with IEEE 1149.1; support production testing and debug without dedicated test pads |
Key Features
| Feature | Design Value |
|---|---|
| ZBTTM Zero Bus Turnaround | Eliminates idle cycles between consecutive read/write operations, enabling continuous 200 MHz bus utilization |
| Internally synchronized OE | Output enable is internally gated-no external timing control needed; simplifies PCB layout and timing closure |
| Individual byte write (BW1–BW4) | Four independent 9-bit write masks allow partial-word updates without read-modify-write overhead |
| 4-word burst counter | Reduces address bus activity by 75% during sequential accesses; supports both linear and interleaved memory mapping |
| Power-down via ZZ input | Reduces active current to minimum retention level while preserving data integrity across power-loss events |
Applications
| High-Speed Network Switching | Telecom Line Card Buffering |
|---|---|
Use Scenario: Storing and forwarding variable-length Ethernet frames in Layer 2 switching ASICs. IC Role / Device Role / Timing Role: High-bandwidth, low-latency frame buffer with ZBT™ pipelining to sustain wire-speed throughput at 10 Gbps+. Use Value: 3.2 ns tCD and 200 MHz clock enable sub-5 ns per-word access, eliminating backpressure in cut-through forwarding paths. | Use Scenario: Temporary storage of voice-over-IP (VoIP) packets in DSP-based media gateways. IC Role / Device Role / Timing Role: Synchronous burst-capable SRAM interfacing directly with TI C6000 DSP EMIF bus. Use Value: 4-word burst mode matches DSP's native burst length, reducing bus arbitration overhead by 60% vs. discrete word accesses. |
| Industrial PLC Data Logging | Radar Signal Processing Buffer |
Use Scenario: Capturing sensor telemetry streams in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-temperature SRAM acting as cyclic buffer for timestamped analog/digital I/O snapshots. Use Value: –40°C to +85°C rating ensures reliable operation in uncontrolled cabinet environments; ZZ sleep mode extends battery backup runtime. | Use Scenario: Intermediate storage of FFT output bins in airborne synthetic aperture radar (SAR) subsystems. IC Role / Device Role / Timing Role: Low-jitter, pipelined memory staging raw IQ samples before FPGA-based beamforming. Use Value: Clock-enable (CEN) pin allows precise synchronization with radar pulse repetition interval; JTAG enables field-upgradable calibration tables. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1315KV18-200BZI | 1M × 18 organization (same density), 200 MHz, but lacks ZBT™ architecture and JTAG | Requires external bus turnaround management; unsuitable for zero-latency burst chaining | Select when cost sensitivity outweighs ZBT™ timing benefits and JTAG is unnecessary |
| AS7C331024B-20JIN | 512K × 36, 200 MHz, no ZBT™, no burst counter, no JTAG, commercial temp only (0°C to +70°C) | Cannot support industrial ambient or burst-optimized protocols; requires full address reassertion per access | Choose only for non-critical commercial systems where extended temperature and testability are not required |
Compared with CY7C1315KV18-200BZI and AS7C331024B-20JIN, the IDT71T75602S200PFI uniquely delivers ZBT™-enabled zero-cycle turnaround, integrated JTAG, and industrial temperature qualification-critical for deterministic real-time buffering in telecom and defense applications.
Availability
IDT71T75602S200PFI is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71T75602S200PFI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.
The IDT71T75602S200PFI belongs to Renesas' legacy IDT synchronous SRAM product line, engineered specifically for high-performance, low-latency data buffering in communications infrastructure and real-time embedded systems.
FAQ
What is the memory configuration and density of the IDT71T75602S200PFI?
The IDT71T75602S200PFI is configured as 512K × 36 bits, delivering 18,874,368 total bits (18 Mbit) of synchronous SRAM. This organization provides a 36-bit data bus width optimized for parallel interfaces in networking and DSP applications. It does not support 1M × 18 mode - that configuration applies to the pin-compatible IDT71T75802 variant.
Does the IDT71T75602S200PFI support ZBTTM (Zero Bus Turnaround) functionality?
Yes, the IDT71T75602S200PFI implements ZBTTM architecture, eliminating dead cycles between read and write operations. This is achieved through internal pipelining and burst counter logic, allowing immediate bus direction reversal without wait states. The feature is intrinsic to the device's design and requires no external logic or configuration.
What package and pin count does the IDT71T75602S200PFI use?
The IDT71T75602S200PFI is supplied in a JEDEC-standard 100-pin thin quad flatpack (TQFP) package, measuring 14 mm × 20 mm with 0.5 mm lead pitch. This package is explicitly designated as PKG100 in Renesas documentation and is distinct from the 119-ball BGA option used by other variants in the same family.
What are the voltage and temperature specifications for the IDT71T75602S200PFI?
The IDT71T75602S200PFI operates with VDD = 2.5 V ±5% (core) and VDDQ = 2.5 V ±5% (I/O), and is rated for industrial temperature range: –40°C to +85°C. These specifications are guaranteed across the full operating range and validated per Renesas datasheet Rev. 6.42.
Does the IDT71T75602S200PFI include JTAG boundary scan capability?
Yes, the IDT71T75602S200PFI integrates a full IEEE 1149.1-compliant JTAG boundary scan interface with TMS, TDI, TCK, and TDO pins. TRST is optional and available only in BGA packages; it is not present in the TQFP version of the IDT71T75602S200PFI.
IDT71T75602S200PFI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR (ZBT)
- Memory Size:
- 18Mbit
- Memory Organization:
- 512K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 200 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.2 ns
- Voltage - Supply:
- 2.375V ~ 2.625V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
IDT71T75602S200PFI FAQ
1.How can I place an order for IDT71T75602S200PFI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71T75602S200PFI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71T75602S200PFI reliable?
The price and inventory of IDT71T75602S200PFI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71T75602S200PFI is usually 5 days.
3.What payment methods are accepted for IDT71T75602S200PFI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71T75602S200PFI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71T75602S200PFI?
IDT71T75602S200PFI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71T75602S200PFI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71T75602S200PFI?
For technical support, including IDT71T75602S200PFI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71T75602S200PFI requirements.
6.How does Aetrix verify that IDT71T75602S200PFI is sourced from the original manufacturer or authorized distributors?
All IDT71T75602S200PFI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71T75602S200PFI meets industry standards.
7.What is the process for return or replacement of IDT71T75602S200PFI?
All IDT71T75602S200PFI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71T75602S200PFI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71T75602S200PFI part is unused and in its original packaging.
Return procedure for IDT71T75602S200PFI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71T75602S200PFI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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