Renesas IDT71V2559S75PF

Overview

IDT71V2559S75PF from Integrated Device Technology is a 3.3V synchronous ZBT™ SRAM with 128K × 36-bit (4.5 Mbit) organization, 7.5 ns clock-to-data access time at 100 MHz, flow-through outputs, and zero bus turnaround architecture. It supports interleaved/linear 4-word burst, individual byte write control (BW1–BW4), and operates with 2.5V I/O supply (VDDQ) for compatibility with low-voltage logic in high-speed networking and packet buffering systems.

For engineers reviewing the IDT71V2559S75PF datasheet, IDT71V2559S75PF pinout, IDT71V2559S75PF application, or IDT71V2559S75PF equivalent, key selection criteria include ZBT™ dead-cycle elimination, 100 MHz synchronous timing, TQFP-100 package compatibility, 3.3V core / 2.5V I/O voltage separation, and burst counter behavior under ADV/LD and LBO control.

Technical Context

The IDT71V2559S75PF implements a synchronous pipeline architecture where address/control registration occurs on the rising CLK edge with ADV/LD low, and data transfer occurs one cycle later. Its ZBT™ feature eliminates bus turnaround latency by enabling immediate read-after-write or write-after-read transitions without idle cycles.

It features a synchronous 4-word burst counter controlled by ADV/LD (load vs. increment) and LBO (linear vs. interleaved order), with flow-through output path (no output register) and asynchronous OE for output tri-state control. All inputs except OE are synchronized to CLK, and CEN suspends operation while holding internal state.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm footprint, with 0.5 mm pitch and exposed thermal pad (not electrically connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1355KV18 and IS61WV102432BLL, the IDT71V2559S75PF delivers optimal balance of 36-bit width, ZBT™ efficiency, and industrial temperature support (–40°C to +85°C) in the widely adopted TQFP-100 package - making it preferred for telecom line cards and packet-switching buffers where bus turnaround elimination directly improves throughput.

Availability

IDT71V2559S75PF is available at Aetrix Electronics and suitable for high-speed packet buffering, telecom line card memory, network processor caching, and real-time video frame storage requiring stable component supply across commercial and industrial temperature ranges.

Supply support for IDT71V2559S75PF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and high-performance mixed-signal solutions.

The IDT71V2559S75PF belongs to IDT's ZBT™ synchronous SRAM product line, designed specifically for bandwidth-constrained, low-latency applications in networking infrastructure, telecommunications equipment, and high-end computing systems where zero bus turnaround is essential.

FAQ

What is the maximum operating frequency and corresponding access time for the IDT71V2559S75PF?

The IDT71V2559S75PF is rated for 100 MHz maximum clock frequency with a guaranteed 7.5 ns clock-to-data access time. This specification applies under standard conditions: VDD = 3.3 V ±5%, VDDQ = 2.5 V ±5%, TA = –40°C to +85°C, and proper termination per AC test load. The IDT71V2559S75PF achieves this performance using IDT's high-speed CMOS process and flow-through output architecture.

How does the ZBTTM feature eliminate dead cycles in the IDT71V2559S75PF?

The ZBTTM (Zero Bus Turnaround) feature in the IDT71V2559S75PF removes mandatory idle cycles between consecutive read and write operations. Unlike conventional SRAMs that require bus direction stabilization time, the IDT71V2559S75PF uses internal synchronization and burst counter logic to transition immediately - e.g., a write cycle at n+1 can be followed by a read at n+2 without gap. This is enabled by the ADV/LD and R/W timing relationship defined in the IDT71V2559S75PF datasheet.

What are the voltage requirements for VDD and VDDQ on the IDT71V2559S75PF?

The IDT71V2559S75PF requires VDD = 3.3 V ±5% (3.135 V to 3.465 V) for core logic and memory array operation, and VDDQ = 2.5 V ±5% (2.375 V to 2.625 V) for I/O buffer operation. These supplies must be independently decoupled; mixing VDD and VDDQ violates the IDT71V2559S75PF's absolute maximum ratings and may cause data corruption or latch-up.

Can the IDT71V2559S75PF operate in both 128K × 36 and 256K × 18 configurations?

Yes, the IDT71V2559S75PF supports dual organization modes: 128K × 36 (default) and 256K × 18. Mode selection is determined by address pin usage - A0–A16 for 128K×36, A0–A17 for 256K×18 - and is transparent to control logic. The IDT71V2559S75PF maintains identical timing, ZBT™ behavior, and burst functionality in both configurations, allowing flexible system-level memory mapping.

What is the function of the LBO pin on the IDT71V2559S75PF, and how must it be driven?

The LBO (Linear Burst Order) pin on the IDT71V2559S75PF selects burst sequence: Low = linear (0,1,2,3), High = interleaved (0,2,1,3). It is a static input - must be driven to a valid logic level (VIL ≤ 0.7 V or VIH ≥ 1.7 V) before initialization and held stable during operation. If left floating, the IDT71V2559S75PF internally pulls LBO to VDD, defaulting to interleaved mode per datasheet note.