Renesas IDT71V256SA10YG

Overview

IDT71V256SA10YG from Renesas Electronics is a 256K (32K × 8-bit) high-speed CMOS static RAM with 10 ns access time, single 3.3 V ±0.3 V supply, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It serves as secondary cache memory in 3.3 V embedded processor systems requiring low standby power and fast read/write cycles.

For engineers reviewing the IDT71V256SA10YG datasheet, IDT71V256SA10YG pinout, IDT71V256SA10YG application, or IDT71V256SA10YG equivalent, key selection criteria include guaranteed 10 ns tAA/tRC timing, 2 mA full-standby current (ISB1), SOJ-28 package compatibility, and support for CS-controlled write/read modes in space-constrained industrial control and networking hardware.

Technical Context

The IDT71V256SA10YG implements a fully decoded asynchronous SRAM architecture with independent address latch and data I/O bidirectional buffers. Its control logic supports three active-low enable inputs-CS, WE, and OE-with priority-based bus contention management and automatic high-impedance output state transitions during chip deselect or write cycles.

It operates exclusively on a single 3.3 V supply with TTL-level input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and guarantees sub-10 ns address-to-data valid timing under industrial temperature conditions. Standby entry is triggered solely by CS = VIH, with full standby (ISB1 ≤ 2 mA) requiring CMOS-level CS hold and zero input toggling.

Key Specifications

Pinout & Package

Package: 28-pin 300 mil Small Outline J-Lead (SOJ), JEDEC MS-013AC compliant, body width 7.62 mm, lead pitch 1.27 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with CY62128EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V256SA10YG uniquely delivers 256K density in a drop-in SOJ-28 package with industry-leading 2 mA full-standby current - making it optimal for retrofitting industrial controllers where board revision is cost-prohibitive.

Availability

IDT71V256SA10YG is available at Aetrix Electronics and suitable for industrial PLC memory buffers, network switch packet buffers, and medical imaging front-end controllers requiring stable component supply and long-term lifecycle assurance.

Supply support for IDT71V256SA10YG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The IDT71V256SA10YG belongs to Renesas' legacy high-speed parallel SRAM product line, engineered specifically for deterministic, low-power memory expansion in 3.3 V industrial control and communications equipment.

FAQ

What is the guaranteed access time for IDT71V256SA10YG across its full operating temperature range?

IDT71V256SA10YG guarantees a maximum address access time (tAA) of 10 ns and read cycle time (tRC) of 10 ns over the full industrial temperature range of –40°C to +85°C, as validated per AC Electrical Characteristics Table 10 in the Renesas datasheet. This specification applies under VCC = 3.3 V ±0.3 V and load conditions matching Figure 2 (5 pF). The IDT71V256SA10YG maintains this performance without derating, enabling reliable integration into thermally demanding environments.

Does IDT71V256SA10YG support true static operation without refresh cycles?

Yes, IDT71V256SA10YG is a fully static CMOS SRAM and requires no refresh cycles. Its memory array retains data indefinitely as long as VCC remains within 3.0 V to 3.6 V and ambient temperature stays within –40°C to +85°C. The IDT71V256SA10YG achieves this using six-transistor (6T) memory cells and asynchronous control logic - eliminating timing-critical refresh overhead found in DRAMs and simplifying system design for real-time applications.

What is the minimum and maximum supply voltage for stable operation of IDT71V256SA10YG?

IDT71V256SA10YG operates reliably with a supply voltage (VCC) between 3.0 V (minimum) and 3.6 V (maximum), per Recommended DC Operating Conditions Table 6. Operation outside this range - including below 3.0 V or above 3.6 V - risks data corruption, timing violations, or permanent damage. The IDT71V256SA10YG is not rated for 2.5 V or 5 V operation, and its LVTTL I/O thresholds are calibrated specifically for 3.3 V nominal supply.

How does the standby power consumption of IDT71V256SA10YG compare between TTL-level and CMOS-level chip select?

IDT71V256SA10YG specifies two standby modes: ISB (TTL-level CS = VIH) draws up to 20 mA, while ISB1 (CMOS-level CS > VHC with f = 0) draws ≤2 mA. The IDT71V256SA10YG achieves ultra-low standby only when CS is held above VHC (≈3.1 V) and no inputs toggle - a condition easily met in systems using clean GPIO-driven chip select. This distinction is critical for battery-backed applications where the IDT71V256SA10YG's 2 mA ISB1 directly extends operational lifetime.

Is IDT71V256SA10YG pin-compatible with other members of the IDT71V256SA family?

Yes, IDT71V256SA10YG shares identical pinout, package (PJG28 SOJ), and signal definitions with all speed variants (e.g., IDT71V256SA12YG, IDT71V256SA15YG) and temperature grades (C/I) in the same SOJ package. All variants use A0–A14, I/O0–I/O7, CS, WE, OE, VCC, and GND in identical positions per the Pin Descriptions table and SOJ top-view diagram. This allows direct substitution for timing margin tuning or qualification reuse without PCB modification - a key advantage of the IDT71V256SA10YG in production ramp scenarios.