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Renesas IDT71V256SA10YG8
- Part No.:
- IDT71V256SA10YG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-BSOJ (0.300", 7.62mm Width)
- Datasheet:
-
IDT71V256SA10YG8.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28SOJ
- Quantity:
- Payment:
- Shipping:
Inventory:4,820
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Product details
Overview
IDT71V256SA10YG8 from Renesas Electronics is a 256K (32K × 8-bit) high-speed CMOS static RAM with 10 ns access time, designed for secondary cache in 3.3 V processor systems. It operates on a single 3.3 V ±0.3 V supply, supports industrial temperature range (–40°C to +85°C), and delivers 2 mA full-standby current in SOJ-28 package.
For engineers reviewing the IDT71V256SA10YG8 datasheet, IDT71V256SA10YG8 pinout, IDT71V256SA10YG8 application, or IDT71V256SA10YG8 equivalent, key selection criteria include tAA ≤10 ns read access, LVTTL-compatible I/O, CS-controlled standby mode, low-power operation under battery-backed systems, and compatibility with 3.3 V desktop and embedded memory buses.
Technical Context
The IDT71V256SA10YG8 implements a fully decoded 15-bit address interface (A0–A14) driving a 262,144-bit memory array organized as 32K × 8. Its control logic uses asynchronous TTL-compatible inputs (CS, WE, OE) to manage read/write cycles and three power states: active, standby (CS = VIH), and full standby (CS > VHC, f = 0).
It features bidirectional LVTTL-compatible I/O0–I/O7 pins with guaranteed VOH ≥2.4 V at IOH = –4 mA and VOL ≤0.4 V at IOL = 8 mA. Standby current is specified at 2 mA maximum under full-standby conditions, enabling extended battery life in portable applications requiring non-volatile data retention during sleep modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), byte-wide parallel interface |
| Access Time (tAA) | 10 ns max - enables direct integration into 100 MHz CPU bus timing without wait states |
| Supply Voltage | 3.3 V ±0.3 V - compatible with modern 3.3 V logic families and eliminates level-shifting needs |
| Standby Current (ISB1) | 2 mA max - ensures <6.6 mW power consumption in full-standby mode for battery-sensitive designs |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded and networking equipment |
| I/O Compatibility | LVTTL - interoperable with standard 3.3 V microprocessors and FPGAs without interface buffers |
| Package | 28-pin 300 mil SOJ (PJG28) - surface-mount compatible with legacy PCB layouts and automated assembly |
Pinout & Package
Package: 28-pin 300 mil Small Outline J-Lead (SOJ), JEDEC MS-013AC compliant, lead-free and RoHS-compliant (Green part designation "G" in suffix).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit unidirectional address bus supporting 32K word addressing |
| I/O0–I/O7 | Bidirectional Data Bus | 8-bit parallel data path with tristate control via CS/OE/WE |
| CS | Chip Select | Active-low enable; drives device into low-power standby when HIGH |
| WE | Write Enable | Active-low control for write cycles; latches data on falling edge when CS is LOW |
| OE | Output Enable | Active-low control for read output drivers; allows bus sharing with other devices |
| VCC | Power Supply | 3.3 V ±0.3 V main supply; powers core and I/O circuitry |
| GND | Ground Reference | Common return path for all internal and I/O currents |
Key Features
| Feature | Design Value |
|---|---|
| 10 ns access time | Meets tight timing budgets for secondary cache in 3.3 V Pentium-class and RISC processor systems |
| Full-standby current ≤2 mA | Enables multi-hour battery backup in SRAM-based real-time clocks and configuration storage |
| LVTTL-compatible I/O | Eliminates need for external level translators when interfacing with 3.3 V ASICs, FPGAs, or microcontrollers |
| Single 3.3 V supply | Reduces board-level power conversion complexity and improves system efficiency vs. 5 V SRAMs |
| Industrial temperature grade | Validated operation across –40°C to +85°C ambient, suitable for telecom line cards and industrial controllers |
Applications
| Processor Secondary Cache | Real-Time Clock Backup Memory |
|---|---|
Use Scenario: High-speed buffer between CPU and main DRAM in embedded x86 or PowerPC systems. IC Role / Device Role / Timing Role: Asynchronous SRAM providing zero-wait-state instruction/data caching with 10 ns tAA. Use Value: Reduces average memory latency by >40% compared to DRAM-only architectures, improving deterministic execution timing. |
Use Scenario: Non-volatile data retention during main power loss in battery-backed RTC modules. IC Role / Device Role / Timing Role: Low-leakage static RAM holding time/date registers and alarm settings while main system is powered down. Use Value: 2 mA full-standby current extends coin-cell battery life beyond 5 years in continuous backup operation. |
| Network Packet Buffering | Industrial PLC Configuration Storage |
Use Scenario: Temporary frame storage in Ethernet switch ASICs handling bursty traffic loads. IC Role / Device Role / Timing Role: Byte-wide parallel SRAM acting as FIFO buffer for ingress/egress packet headers and metadata. Use Value: LVTTL I/O and 10 ns access support 100 Mbps+ line-rate buffering with minimal glue logic. |
Use Scenario: Storing user-defined ladder logic parameters and I/O mapping tables in programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining configuration data across power cycles and thermal stress. Use Value: –40°C to +85°C qualification ensures reliable parameter retention in factory-floor environments with wide ambient swings. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-10ZSXI | 128K × 8-bit, 10 ns access, 3.3 V, SOJ-28, but rated only to +70°C commercial grade | Lacks industrial temperature support; unsuitable for extended ambient operation | Select only for cost-sensitive commercial designs where thermal margin exceeds 15°C |
| AS6C4008-10TIN | 512K × 8-bit, 10 ns, 3.3 V, TSOP-32, higher density but different pinout and package | Requires PCB redesign due to 32-pin TSOP and incompatible address/data mapping | Choose when memory expansion beyond 256K is required and layout flexibility exists |
Compared with CY62128EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V256SA10YG8 uniquely combines 10 ns speed, industrial temperature rating, SOJ-28 footprint, and sub-2 mA full-standby current-making it optimal for space-constrained, thermally demanding, battery-aware embedded memory subsystems.
Availability
IDT71V256SA10YG8 is available at Aetrix Electronics and suitable for industrial controllers, network edge devices, and battery-backed real-time systems requiring stable component supply and long-term lifecycle assurance.
Supply support for IDT71V256SA10YG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
The IDT71V256SA10YG8 belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered specifically for low-latency, low-power memory subsystems in 3.3 V processor-based systems requiring industrial reliability.
FAQ
What is the operating voltage range for IDT71V256SA10YG8?
IDT71V256SA10YG8 operates within a supply voltage range of 3.0 V to 3.6 V, with nominal 3.3 V ±0.3 V. This ensures compatibility with standard 3.3 V logic families and eliminates the need for voltage translation in most embedded designs. The device's DC characteristics-including VOH, VOL, and leakage-are fully specified across this range per Renesas datasheet Table 6.
Does IDT71V256SA10YG8 support industrial temperature operation?
Yes, IDT71V256SA10YG8 is qualified for industrial temperature operation from –40°C to +85°C. The "I" suffix in its ordering code (e.g., YGI8) explicitly denotes industrial grade, and all AC/DC electrical specifications-including tAA ≤10 ns and ISB1 ≤2 mA-are guaranteed across this full range per datasheet Tables 5 and 7.
What package type does IDT71V256SA10YG8 use?
IDT71V256SA10YG8 uses a 28-pin 300 mil Small Outline J-Lead (SOJ) package, identified as PJG28 in Renesas documentation. It is RoHS-compliant and marked with green material content ("G" in suffix), supporting both tube and tape-and-reel delivery formats per ordering information.
How does the standby power management work on IDT71V256SA10YG8?
IDT71V256SA10YG8 enters low-power standby when CS is driven HIGH (VIH). In full standby mode-where CS > VHC, no inputs toggle (f = 0), and outputs are high-impedance-power consumption is guaranteed ≤2 mA (≤6.6 mW). This behavior is verified across temperature and voltage extremes and enables extended battery life in always-on embedded systems.
Is IDT71V256SA10YG8 pin-compatible with other speeds in the same family?
Yes, IDT71V256SA10YG8 shares identical pinout and package (PJG28 SOJ) with all other IDT71V256SA variants including 12 ns, 15 ns, and 20 ns versions. Address, data, control, and power pins are functionally and physically identical-allowing drop-in replacement for timing validation or yield optimization without PCB changes.
IDT71V256SA10YG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-BSOJ (0.300", 7.62mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-SOJ
IDT71V256SA10YG8 FAQ
1.How can I place an order for IDT71V256SA10YG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V256SA10YG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V256SA10YG8 reliable?
The price and inventory of IDT71V256SA10YG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V256SA10YG8 is usually 5 days.
3.What payment methods are accepted for IDT71V256SA10YG8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V256SA10YG8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V256SA10YG8?
IDT71V256SA10YG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V256SA10YG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V256SA10YG8?
For technical support, including IDT71V256SA10YG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V256SA10YG8 requirements.
6.How does Aetrix verify that IDT71V256SA10YG8 is sourced from the original manufacturer or authorized distributors?
All IDT71V256SA10YG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V256SA10YG8 meets industry standards.
7.What is the process for return or replacement of IDT71V256SA10YG8?
All IDT71V256SA10YG8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V256SA10YG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V256SA10YG8 part is unused and in its original packaging.
Return procedure for IDT71V256SA10YG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V256SA10YG8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT21CS01-STUM10-T
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