Renesas IDT71V256SA12PZI8
- Part No.:
- IDT71V256SA12PZI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 28-TSSOP (0.465", 11.80mm Width)
- Datasheet:
-
IDT71V256SA12PZI8.pdf
- Description:
- IC SRAM 256KBIT PARALLEL 28TSOP
- Quantity:
- Payment:

- Shipping:

Inventory:4,547
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDT71V256SA12PZI8 from Renesas Electronics is a 256K (32K × 8-bit) high-speed CMOS static RAM with 12 ns access time, single 3.3 V ±0.3 V supply, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It serves as secondary cache memory in 3.3 V desktop and embedded systems requiring low-power standby and fast read/write cycles.
For engineers reviewing the IDT71V256SA12PZI8 datasheet, IDT71V256SA12PZI8 pinout, IDT71V256SA12PZI8 application, or IDT71V256SA12PZI8 equivalent, key selection criteria include guaranteed 12 ns tAA/tRC timing, 2 mA full-standby current (ISB1), TSOP Type I (PZG28) package compatibility, and industrial-grade reliability for space-constrained industrial control and networking hardware.
Technical Context
This SRAM implements asynchronous, byte-wide random-access storage with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its architecture supports both CS-controlled and WE-controlled read/write timing modes, with guaranteed tCLZ ≤5 ns and tOHZ ≤8 ns for clean bus turnaround.
It operates exclusively on a single 3.3 V supply with LVTTL-compatible voltage thresholds (VIH ≥2.0 V, VIL ≤0.8 V), and achieves sub-6.6 mW full-standby power (VCC = 3.6 V, f = 0) via CMOS-level CS deactivation - critical for battery-backed or thermally constrained applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 32K × 8-bit (262,144 bits), byte-oriented I/O interface |
| Access Time (tAA) | 12 ns maximum - enables direct interfacing with 83 MHz CPU buses without wait states |
| Supply Voltage | 3.3 V ±0.3 V - compatible with standard 3.3 V logic rails and eliminates need for dual-supply design |
| Standby Current (ISB1) | 2 mA maximum at VCC = 3.6 V, f = 0 - extends system battery life during idle periods |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including factory automation and telecom infrastructure |
| I/O Compatibility | LVTTL - ensures seamless integration with 3.3 V microcontrollers, FPGAs, and ASICs without level-shifting |
| Package | 28-pin TSOP Type I (PZG28), 300 mil width - supports high-density PCB layouts with JEDEC-standard footprint |
Pinout & Package
Package: 28-pin TSOP Type I (PZG28), 300 mil body width, surface-mount, RoHS-compliant green variant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | 15-bit address bus accepting 0–32,767 row/column decode for full 32K access |
| I/O0–I/O7 | Bi-directional Data Lines | 8-bit parallel data path supporting simultaneous read or write of one byte per cycle |
| CS | Chip Select | Active-low enable; drives device into low-power standby when HIGH (CMOS-level), enabling system-wide power gating |
| WE | Write Enable | Active-low control determining write vs. read mode; must be LOW concurrently with CS LOW to initiate write |
| OE | Output Enable | Active-low control enabling output drivers; allows shared bus operation by placing outputs in high-Z when disabled |
| VCC | Power Supply | 3.3 V ±0.3 V input; powers core logic and I/O buffers; decoupling required within 10 mm of pin |
| GND | Ground Reference | Signal and power return; requires low-inductance connection to minimize noise coupling during fast transitions |
Key Features
| Feature | Design Value |
|---|---|
| 12 ns Access Speed | Meets timing requirements of high-performance 3.3 V processors without external wait-state generation |
| 2 mA Full Standby Current | Enables >10-year battery backup in non-volatile SRAM configurations with minimal leakage impact |
| Industrial Temperature Range | Validated operation across –40°C to +85°C ambient, eliminating derating concerns in uncontrolled enclosures |
| TSOP Type I Packaging | Reduces board area by ~40% versus SOJ while maintaining JEDEC-compliant solder reflow profile |
| LVTTL Interface Compatibility | Eliminates need for external level translators when interfacing with Xilinx Artix-7, NXP i.MX6, or Renesas RZ/A series SoCs |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Secondary cache for FPGA-based control logic, holding configuration tables and process variables with sub-15 ns latency. Use Value: 12 ns tAA ensures zero-cycle penalty during rapid state-machine transitions, while ISB1 ≤2 mA reduces thermal load in sealed DIN-rail enclosures. |
Use Scenario: Temporary frame storage in Layer 2 Ethernet switches handling 10/100 Mbps traffic. IC Role / Device Role / Timing Role: Asynchronous packet buffer between MAC and PHY layers, absorbing bursty ingress/egress traffic. Use Value: TSOP packaging enables dual-SRAM placement adjacent to switch ASICs; LVTTL compatibility avoids signal integrity degradation on 3.3 V backplanes. |
| Medical Imaging Control Board | Ruggedized Handheld Terminal |
Use Scenario: Storing calibration coefficients and real-time sensor fusion results in portable ultrasound units. IC Role / Device Role / Timing Role: Non-volatile shadow RAM backed by supercapacitor, retaining critical settings during AC power loss. Use Value: Industrial temperature rating ensures stable operation during extended field use; 3.3 V-only supply simplifies power tree design with single buck converter. |
Use Scenario: Barcode scanner firmware execution and temporary scan-result caching in warehouse handhelds. IC Role / Device Role / Timing Role: Code/data RAM for ARM Cortex-M4 MCU, supporting fast boot and responsive UI rendering. Use Value: 28-pin TSOP footprint fits narrow PCBs; 2 mA ISB1 extends battery runtime between charges without compromising responsiveness. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62128EV30LL-45ZSXI | 45 ns access time, 5 V tolerant I/O, 32K × 8 organization | Designed for legacy 5 V systems; lacks 3.3 V native operation and industrial-grade ISB1 spec | Select only if migrating from 5 V designs where voltage translation is already present |
| AS6C4008-12ZIN | 12 ns access, 3.3 V supply, but 256K × 8 (not 32K × 8); higher density, same TSOP-28 package | Offers 8× more capacity; requires address bus extension and software remapping | Choose when future-proofing for larger data buffers without changing PCB layout |
Compared with IDT71V256SA12PZI8, CY62128EV30LL-45ZSXI trades speed and modern voltage compliance for legacy compatibility, while AS6C4008-12ZIN provides identical timing and package but doubles memory depth - making it suitable for capacity upgrades without physical redesign.
Availability
IDT71V256SA12PZI8 is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, medical imaging control boards, and ruggedized handheld terminals requiring stable component supply across extended product lifecycles.
Supply support for IDT71V256SA12PZI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and enterprise applications.
IDT71V256SA12PZI8 belongs to Renesas' legacy high-speed SRAM product line, engineered specifically for low-latency, low-power 3.3 V cache and buffer applications in space- and thermal-constrained industrial systems.
FAQ
What is the maximum operating frequency supported by IDT71V256SA12PZI8?
IDT71V256SA12PZI8 does not operate on a clock signal - it is an asynchronous SRAM. Its maximum effective throughput is determined by its 12 ns read cycle time (tRC), enabling up to 83.3 MHz sustained random access when interfaced with appropriate address/data setup/hold margins. This makes IDT71V256SA12PZI8 suitable for high-bandwidth CPU cache interfaces without synchronous clocking constraints.
Does IDT71V256SA12PZI8 require external pull-up resistors on its control pins?
No, IDT71V256SA12PZI8 has internally biased inputs meeting LVTTL specifications; CS, WE, and OE do not require external pull-ups for proper logic-level recognition. However, floating inputs must be avoided - unused control lines should be tied to VCC or GND per system reset requirements. This behavior is confirmed in the DC Electrical Characteristics table of the Renesas datasheet for IDT71V256SA12PZI8.
Can IDT71V256SA12PZI8 be used in battery-powered applications with long idle periods?
Yes - IDT71V256SA12PZI8 draws only 2 mA maximum in full standby mode (ISB1) when CS is held at CMOS-high and no signals toggle. Combined with its 3.3 V single-supply operation and industrial temperature stability, this makes IDT71V256SA12PZI8 ideal for battery-backed data loggers, portable test equipment, and remote sensors requiring multi-year operational life between charges or replacements.
Is the TSOP package of IDT71V256SA12PZI8 compatible with standard reflow profiles?
Yes - the PZG28 TSOP Type I package of IDT71V256SA12PZI8 complies with IPC/JEDEC J-STD-020 moisture sensitivity level 3 and supports standard lead-free reflow profiles (peak 260°C, 60-second duration above 217°C). Renesas specifies no special pre-bake requirements for IDT71V256SA12PZI8 under normal factory handling conditions.
How does IDT71V256SA12PZI8 handle bus contention during write operations?
IDT71V256SA12PZI8 prevents bus contention through three-stage control: I/O pins enter high-impedance state when CS is HIGH or OE is HIGH; during writes, WE and CS must both be LOW while OE remains HIGH to avoid driver conflict. The tWHZ parameter (≤10 ns) guarantees safe output disable before new data is driven - a behavior explicitly defined in the Truth Table and AC Characteristics of IDT71V256SA12PZI8.
IDT71V256SA12PZI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 28-TSSOP (0.465", 11.80mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 256Kbit
- Memory Organization:
- 32K x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 28-TSOP
IDT71V256SA12PZI8 FAQ
1.How can I place an order for IDT71V256SA12PZI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V256SA12PZI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V256SA12PZI8 reliable?
The price and inventory of IDT71V256SA12PZI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V256SA12PZI8 is usually 5 days.
3.What payment methods are accepted for IDT71V256SA12PZI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V256SA12PZI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V256SA12PZI8?
IDT71V256SA12PZI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V256SA12PZI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V256SA12PZI8?
For technical support, including IDT71V256SA12PZI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V256SA12PZI8 requirements.
6.How does Aetrix verify that IDT71V256SA12PZI8 is sourced from the original manufacturer or authorized distributors?
All IDT71V256SA12PZI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V256SA12PZI8 meets industry standards.
7.What is the process for return or replacement of IDT71V256SA12PZI8?
All IDT71V256SA12PZI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V256SA12PZI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V256SA12PZI8 part is unused and in its original packaging.
Return procedure for IDT71V256SA12PZI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V256SA12PZI8 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
