Renesas IDT71V256SA20PZI8

Overview

IDT71V256SA20PZI8 from Renesas Electronics is a 256K (32K × 8-bit) high-speed CMOS static RAM designed for secondary cache in 3.3V processor systems. It operates at 20 ns access time, supports industrial temperature range (–40°C to +85°C), consumes ≤2 mA standby current, and uses LVTTL-compatible I/O on a single 3.3V ±0.3V supply.

For engineers reviewing the IDT71V256SA20PZI8 datasheet, IDT71V256SA20PZI8 pinout, IDT71V256SA20PZI8 application, or IDT71V256SA20PZI8 equivalent, key selection criteria include its 28-pin TSOP Type I package, full standby power <6.6 mW, tAA/tRC = 20 ns timing, and compatibility with 3.3V cache controller interfaces requiring low-leakage, fast-read SRAM.

Technical Context

The IDT71V256SA20PZI8 implements a synchronous, asynchronous SRAM architecture with independent chip select (CS), output enable (OE), and write enable (WE) controls. Its address decoder drives a 262,144-bit memory array organized as 32K words × 8 bits, supporting read cycles with tCLZ ≤5 ns and tOH ≥3 ns, and write cycles with tWP ≥15 ns and tDW ≥8 ns.

It features dual standby modes: TTL-level standby (ISB ≤20 mA) when CS = VIH, and full CMOS-level standby (ISB1 ≤2 mA) when CS > VHC and f = 0. All inputs and outputs meet LVTTL voltage thresholds (VIH ≥2.0 V, VIL ≤0.8 V), ensuring interoperability with 3.3V logic families without level translation.

Key Specifications

Pinout & Package

Package: 28-pin TSOP Type I (PZG28), 300 mil width, surface-mount, JEDEC standard footprint.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with CY62256ELL-20ZXI and AS6C4008-20BIN, the IDT71V256SA20PZI8 offers superior thermal robustness (–40°C to +85°C fully rated), lowest full-standby power (≤2 mA), and native TSOP-28 footprint optimized for space-constrained industrial PCBs.

Availability

IDT71V256SA20PZI8 is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics displays, rugged handheld terminals, and factory automation controllers requiring stable component supply across extended temperature ranges.

Supply support for IDT71V256SA20PZI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and IoT applications.

The IDT71V256SA20PZI8 belongs to Renesas' legacy high-speed CMOS SRAM product line, engineered specifically for low-latency, low-power 3.3V cache and buffer applications in mission-critical industrial systems.

FAQ

What is the maximum operating frequency supported by the IDT71V256SA20PZI8?

The IDT71V256SA20PZI8 does not operate synchronously and has no clock input; its maximum effective throughput is determined by its 20 ns read cycle time (tRC), supporting up to 50 MHz random-access operation. This makes it suitable for asynchronous bus interfaces in processors and FPGAs where deterministic latency matters more than clocked bandwidth.

Does the IDT71V256SA20PZI8 require external refresh circuitry?

No, the IDT71V256SA20PZI8 is a static RAM and requires no refresh cycles. Its CMOS latch-based memory cells retain data indefinitely as long as VCC is applied and CS remains LOW during active use. This eliminates refresh overhead and timing complexity found in DRAM-based designs.

Can the IDT71V256SA20PZI8 be used in a 5V system?

No - the IDT71V256SA20PZI8 is strictly a 3.3V device (VCC = 3.0–3.6 V). Its absolute maximum terminal voltage is VCC + 0.5 V, so applying 5V to any pin will cause permanent damage. Interfacing with 5V logic requires level-shifting circuitry or a compatible 3.3V system architecture.

What is the difference between ISB and ISB1 current ratings for the IDT71V256SA20PZI8?

ISB (≤20 mA) applies when CS = VIH (TTL HIGH), indicating partial standby with internal clocks possibly active. ISB1 (≤2 mA) applies under full CMOS-level standby (CS > VHC, f = 0, VIN at valid logic levels), representing true minimum power state. Designers targeting ultra-low power should assert CS above VHC and halt all toggling to achieve ISB1.

Is the IDT71V256SA20PZI8 pin-compatible with earlier speed grades like IDT71V256SA15PZI8?

Yes - all IDT71V256SA variants (12/15/20 ns) share identical 28-pin TSOP Type I (PZG28) pinout, pin functions, and DC characteristics. The only differences are AC timing parameters; substituting IDT71V256SA20PZI8 for faster grades maintains full hardware compatibility but reduces maximum achievable bus speed.