Renesas IDT71V416L10BEGI

Overview

IDT71V416L10BEGI from Renesas Electronics is a 4,194,304-bit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It features separate byte enable pins (BHE/BLE), output enable (OE), and JEDEC-standard center-power/ground pinout for noise reduction - deployed in embedded controllers, network packet buffers, and real-time data acquisition systems.

For engineers reviewing the IDT71V416L10BEGI datasheet, IDT71V416L10BEGI pinout, IDT71V416L10BEGI application, or IDT71V416L10BEGI equivalent, key selection criteria include 10 ns read cycle time, low-power standby current (10 mA max), 48-ball BGA (BEG48) package compatibility, and byte-selectable write capability for mixed-width bus interfacing.

Technical Context

The IDT71V416L10BEGI implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing across industrial temperatures. Its dual-byte enable architecture enables independent 8-bit writes without affecting adjacent bytes, while the OE-controlled 5 ns output enable path supports fast burst reads in pipelined systems.

Pin-compatible with the IDT71V416S/L family, it shares identical address decoding (A0–A17), bidirectional I/O mapping (I/O0–I/O15), and control logic (CS, WE, OE, BHE, BLE), but distinguishes itself via lower dynamic and standby current: ISB = 50 mA (max) and ISB1 = 10 mA (max) at VDD = 3.6 V and fMAX.

Key Specifications

Pinout & Package

Package: 48-ball fine-pitch BGA (BEG48), 9 mm × 9 mm, 0.8 mm ball pitch, RoHS-compliant green variant.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10BIN, the IDT71V416L10BEGI delivers superior thermal management via BEG48 BGA, lowest standby current (10 mA), and native byte-enable logic - making it optimal for thermally constrained, power-aware industrial systems requiring partial-write efficiency.

Availability

IDT71V416L10BEGI is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, FPGA configuration caches, and digital signal acquisition systems requiring stable component supply across extended lifecycles.

Supply support for IDT71V416L10BEGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a global semiconductor leader delivering microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The IDT71V416L10BEGI belongs to Renesas' legacy high-speed SRAM product line, engineered for deterministic, low-latency memory access in real-time embedded systems where refresh-free operation and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency supported by the IDT71V416L10BEGI?

The IDT71V416L10BEGI does not use a clock; it is an asynchronous SRAM. Its maximum effective throughput is determined by its 10 ns read cycle time (tRC), enabling up to 100 million random accesses per second. Sustained bandwidth depends on bus protocol overhead and address stability - no internal oscillator or PLL is present.

Does the IDT71V416L10BEGI require external refresh circuitry?

No. The IDT71V416L10BEGI is a fully static RAM: it retains data indefinitely as long as VDD is applied and CS remains asserted or deselected properly. No refresh cycles, timers, or external circuitry are needed - unlike DRAM or pseudo-SRAM devices.

Can the IDT71V416L10BEGI be used with a 5 V microcontroller interface?

No. The IDT71V416L10BEGI is strictly a 3.3 V LVTTL device: VIH(max) = VDD + 0.3 V (≤3.9 V), and absolute max VIN = VDD + 0.5 V (≤4.1 V). Direct connection to 5 V logic will exceed ratings and risk damage. Level translation is mandatory for 5 V host interfaces.

What is the function of the NC pins on the BEG48 package of the IDT71V416L10BEGI?

The IDT71V416L10BEGI's BEG48 package has multiple NC (No Connect) balls, including Ball A1, Ball D1, Ball E1, Ball G1, and Ball H1 per Renesas pin map. These are unconnected silicon pads - they must remain unpopulated and unconnected on PCBs to avoid signal integrity issues or unintended coupling.

How does the IDT71V416L10BEGI handle simultaneous read and write operations?

The IDT71V416L10BEGI does not support true simultaneous read/write. It is a single-port SRAM: when WE is LOW (write active), outputs go high-Z regardless of OE state. Reads occur only when WE is HIGH and OE/CS are asserted - enforcing strict read-then-write or write-then-read sequencing.