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Renesas IDT71V416L10BEGI8

Part No.:
IDT71V416L10BEGI8
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixIDT71V416L10BEGI8.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,045

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Product details

Overview

IDT71V416L10BEGI8 from Renesas Electronics is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and industrial temperature range (–40°C to +85°C). It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and real-time data buffering systems.

For engineers reviewing the IDT71V416L10BEGI8 datasheet, IDT71V416L10BEGI8 pinout, IDT71V416L10BEGI8 application, or IDT71V416L10BEGI8 equivalent, key selection considerations include its 10 ns read cycle time, 44-pin TSOP Type II package with JEDEC center power/GND pinout, low-power standby current (10 mA max), and support for word/byte-level read/write operations without refresh or clocks.

Technical Context

The IDT71V416L10BEGI8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS technology optimized for deterministic timing. Its dual-byte enable architecture allows independent access to upper and lower 8-bit data lanes, while the OE pin enables fast 5 ns output enable timing independent of CS transitions.

Address decoding is handled by internal row/column decoders driving a 4,194,304-bit memory array. All control inputs (CS, WE, OE, BHE, BLE) and bidirectional I/Os are LVTTL-compatible, ensuring seamless integration with 3.3 V logic families. The device supports three distinct write control modes: WE-controlled, CS-controlled, and byte-enable-controlled timing.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16), enabling 32 KB of directly addressable SRAM space
Access Time (tAA)10 ns maximum - guarantees sub-100 MHz bus interface compatibility
Supply Voltage3.0 V to 3.6 V - compatible with standard 3.3 V system rails and tolerant of typical board-level ripple
Standby Current (ISB1)10 mA maximum - ensures ultra-low power retention during system sleep states
I/O InterfaceLVTTL-compatible - eliminates level-shifting requirements when interfacing with FPGA or microcontroller GPIO
Operating Temperature–40°C to +85°C - qualified for industrial-grade embedded applications including motor control and instrumentation
Package44-pin TSOP Type II (PHG44), 400 mil width - surface-mount compatible with standard reflow profiles and IPC-7351B land patterns

Pinout & Package

Package: 44-pin, 400-mil TSOP Type II (PHG44), RoHS-compliant, industrial temperature grade.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; no external address latching required
CSChip SelectActive-low enable controlling overall device activation; supports multi-chip memory expansion
WEWrite EnableActive-low signal initiating write cycles; used with CS and byte enables for precise data strobing
OEOutput EnableActive-low control for tri-state output drivers; enables bus sharing without external transceivers
BHEHigh Byte EnableActive-low control for I/O8–I/O15; allows selective 8-bit writes to upper data byte
BLELow Byte EnableActive-low control for I/O0–I/O7; enables independent lower-byte write operations
I/O0–I/O15Bidirectional Data Bus16-bit LVTTL I/O lines supporting simultaneous read/write per byte; no direction pins needed
VDDPower Supply3.3 V core supply; JEDEC-center pin placement reduces switching noise coupling into adjacent signals
VSSGroundGround reference; paired with VDD in center positions to minimize ground bounce and improve signal integrity

Key Features

FeatureDesign Value
JEDEC Center Power/GND PinoutReduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS across the package center, improving signal integrity in high-speed parallel buses
Byte-Enable Architecture (BHE/BLE)Enables independent 8-bit read/write operations without masking logic or additional glue logic, reducing FPGA resource usage and PCB routing complexity
5 ns Output Enable Timing (tOE)Allows rapid data sampling in burst-mode or pipelined bus protocols, minimizing dead cycles between successive reads
No Clock or Refresh RequiredEliminates need for clock distribution networks or refresh controllers, simplifying system design and reducing BOM count in battery-powered or safety-critical systems
Industrial Temperature Range (–40°C to +85°C)Validated for continuous operation in harsh environments such as factory automation PLCs and outdoor telecom equipment

Applications

Industrial PLC Data BufferingMedical Imaging Frame Memory

Use Scenario: Real-time acquisition and temporary storage of sensor data streams in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: High-speed parallel SRAM acting as a zero-wait-state buffer between ADC interfaces and ARM Cortex-M7-based control processors.

Use Value: 10 ns access time ensures full utilization of 80 MHz system bus bandwidth, while byte enables allow efficient packing of mixed-precision sensor values without software overhead.

Use Scenario: Storing uncompressed grayscale image frames (e.g., 512×512 @ 16-bit) during real-time ultrasound or X-ray preprocessing.

IC Role / Device Role / Timing Role: Standalone frame buffer providing synchronous read/write access to FPGA-based image pipeline engines.

Use Value: 256K × 16 organization matches common 16-bit pixel depth; 10 ns tAA enables >90 MB/s sustained throughput required for real-time video-rate processing.

Avionics Display Controller CacheTest Equipment Pattern Memory

Use Scenario: Caching display list instructions and glyph bitmaps in DO-254-compliant cockpit display units.

IC Role / Device Role / Timing Role: Non-volatile-configurable SRAM used as instruction/data cache for dedicated graphics controller ASICs.

Use Value: Industrial temperature rating and 100% static operation eliminate refresh-induced timing jitter critical for certified avionics timing budgets.

Use Scenario: Storing digital stimulus/response patterns in automated test equipment (ATE) for semiconductor wafer probing.

IC Role / Device Role / Timing Role: High-reliability pattern memory accessed by high-speed pattern generators at up to 100 MHz effective rate.

Use Value: Low 10 ns tAA and 10 ns tRC guarantee deterministic pattern delivery with no cycle stretching, essential for sub-nanosecond timing margins in ATE.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-10ZSXI16 Mbit (1M × 16), 10 ns access, 3.3 V, 44-pin TSOP II - larger density but same pinout and timingRequires no PCB change; suitable when >4 Mbit capacity is needed without redesigning memory map or address decodingSelect when future-proofing for higher data throughput or longer buffer depth is required without altering physical layout.
AS6C4008-10TIN4 Mbit (256K × 16), 10 ns, 3.3 V, 44-pin TSOP II - identical density and speed, but lower standby current (3 µA vs. 10 mA)Better suited for ultra-low-power portable instruments where deep-sleep current dominates battery lifeChoose when ISB1 < 5 µA is mandatory and industrial temp range is not required (AS6C4008 rated –20°C to +70°C).

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V416L10BEGI8 offers optimal balance of industrial temperature qualification, proven reliability in long-lifecycle embedded systems, and direct compatibility with legacy 4-Mbit parallel SRAM designs requiring minimal validation effort.

Availability

IDT71V416L10BEGI8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, medical imaging frame memory, avionics display controller cache, and test equipment pattern memory requiring stable component supply across extended production lifecycles.

Supply support for IDT71V416L10BEGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader delivering trusted embedded solutions for automotive, industrial, infrastructure, and IoT applications.

The IDT71V416L10BEGI8 belongs to Renesas' legacy high-speed parallel SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and industrial temperature resilience are mandatory.

FAQ

What is the operating voltage range for the IDT71V416L10BEGI8?

The IDT71V416L10BEGI8 operates over a supply voltage range of 3.0 V to 3.6 V. This 3.3 V nominal specification ensures compatibility with standard LVTTL logic families and accommodates typical power rail tolerances in industrial systems. Operation outside this range may result in undefined behavior or permanent damage, as specified in the absolute maximum ratings table.

Does the IDT71V416L10BEGI8 require a clock or refresh circuit?

No, the IDT71V416L10BEGI8 uses fully static asynchronous circuitry and requires neither a clock nor periodic refresh. This eliminates timing dependencies on external clocks and removes the need for refresh controllers or associated firmware overhead-making it ideal for safety-critical and low-power embedded applications where deterministic latency is essential.

What package type is used for the IDT71V416L10BEGI8?

The IDT71V416L10BEGI8 is packaged in a 44-pin, 400-mil TSOP Type II (PHG44) with industrial temperature grading. This surface-mount package adheres to JEDEC standards, features center-placed VDD/VSS pins for noise reduction, and is compatible with standard reflow soldering processes and IPC-7351B footprint guidelines.

How does the byte enable functionality work on the IDT71V416L10BEGI8?

The IDT71V416L10BEGI8 provides two independent byte enable inputs: BHE (high byte enable) for I/O8–I/O15 and BLE (low byte enable) for I/O0–I/O7. When either is asserted low (with CS and WE active), only the corresponding 8-bit lane is written; both must be low for full 16-bit word writes. This enables efficient partial-word updates without external masking logic.

What is the maximum standby current for the IDT71V416L10BEGI8 at industrial temperature?

The maximum full standby current (ISB1) for the IDT71V416L10BEGI8 at industrial temperature (–40°C to +85°C) is 10 mA. This static current draw occurs when CS is high and no address or control lines are toggling-critical for estimating worst-case power consumption during system sleep modes in battery-backed or energy-constrained applications.

IDT71V416L10BEGI8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

IDT71V416L10BEGI8 FAQ

1.How can I place an order for IDT71V416L10BEGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416L10BEGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416L10BEGI8 reliable?

The price and inventory of IDT71V416L10BEGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416L10BEGI8 is usually 5 days.

3.What payment methods are accepted for IDT71V416L10BEGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416L10BEGI8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416L10BEGI8?

IDT71V416L10BEGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416L10BEGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416L10BEGI8?

For technical support, including IDT71V416L10BEGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416L10BEGI8 requirements.

6.How does Aetrix verify that IDT71V416L10BEGI8 is sourced from the original manufacturer or authorized distributors?

All IDT71V416L10BEGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416L10BEGI8 meets industry standards.

7.What is the process for return or replacement of IDT71V416L10BEGI8?

All IDT71V416L10BEGI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416L10BEGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416L10BEGI8 part is unused and in its original packaging.

Return procedure for IDT71V416L10BEGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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