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Renesas IDT71V416L10BEI

Part No.:
IDT71V416L10BEI
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixIDT71V416L10BEI.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,192

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Product details

Overview

IDT71V416L10BEI from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V CMOS static RAM with 10 ns access time, JEDEC-compliant center power/ground pinout, and industrial temperature range (–40°C to +85°C). It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and operates fully asynchronously without clocks or refresh.

For engineers reviewing the IDT71V416L10BEI datasheet, IDT71V416L10BEI pinout, IDT71V416L10BEI application, or IDT71V416L10BEI equivalent, key selection criteria include its LVTTL-compatible I/O, low-power standby current (10 mA typical), 44-pin SOJ package, and dual-byte enable architecture for embedded memory subsystems requiring deterministic timing and noise resilience.

Technical Context

The IDT71V416L10BEI implements a fully static asynchronous memory core with no internal clocks or refresh circuitry. Its address decoding uses row/column architecture across A0–A17 inputs, supporting 256K word addressing. All control signals-CS, OE, WE, BHE, BLE-are active-low and LVTTL-compatible.

Timing is defined by fixed-cycle parameters: tAA = 10 ns (address access), tRC = 10 ns (read cycle), tWC = 10 ns (write cycle), with tCLZ = 4 ns (CS low to output valid) and tOHZ = 5 ns (CS high to high-Z). Byte enables allow independent 8-bit access without affecting the opposite byte lane.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 16-bit (4,194,304-bit total); supports word-level or byte-level data transfers
Access Time (tAA)10 ns max; guarantees data validity within 10 ns of stable address and CS/OE assertion
Supply Voltage3.0 V to 3.6 V; compatible with 3.3V LVTTL logic families and eliminates level-shifting needs
Standby Current (ISB1)10 µA typical; enables ultra-low-power hold mode during system sleep states
Operating Temperature–40°C to +85°C; qualified for industrial-grade reliability in harsh environments
I/O InterfaceLVTTL-compatible bidirectional I/O (I/O0–I/O15); ensures direct interfacing with FPGA/CPU I/O banks
Package44-pin, 400-mil plastic SOJ (SO44-1); JEDEC-standard footprint with center VDD/VSS for reduced switching noise

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center power/ground layout for EMI reduction.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus; selects one of 256K memory locations (A0 LSB, A17 MSB)
CSChip SelectActive-low enable; places device in active or high-Z state; used for memory banking
OEOutput EnableActive-low control for output drivers; allows shared bus operation with other devices
WEWrite EnableActive-low signal initiating write cycle; latches data on I/O lines when CS and byte enables are asserted
BHEHigh-Byte EnableActive-low control for I/O8–I/O15; enables 8-bit writes to upper byte independently
BLELow-Byte EnableActive-low control for I/O0–I/O7; enables 8-bit writes to lower byte independently
I/O0–I/O15Bidirectional Data16-bit LVTTL I/O bus; direction controlled by WE and CS; high-Z when deselected or OE inactive
VDDPower Supply+3.3V supply; two pins (pins 12 & 33) placed centrally per JEDEC for low-inductance decoupling
VSSGroundGround reference; two pins (pins 11 & 34) adjacent to VDD for balanced return path
NCNo ConnectPin 28 is unconnected; must be left floating or tied to VSS per datasheet note

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise (SSN) by minimizing ground bounce and supply ripple in dense PCB layouts
Dual Byte Enable (BHE/BLE)Enables independent 8-bit read/write without masking logic or external gates, simplifying glueless CPU/FPGA interface
10 ns Access with Low-Power ProfileCombines high-speed performance (10 ns tAA) with only 10 µA static standby current-critical for battery-backed or energy-constrained systems
Fully Static Asynchronous OperationRequires no clocks, refresh cycles, or wait states-ideal for real-time deterministic systems like industrial PLCs and avionics
LVTTL-Compatible I/ODirect interface with 3.3V microcontrollers, FPGAs, and DSPs without level shifters or bus buffers

Applications

Industrial PLC Memory BufferMedical Imaging Frame Store

Use Scenario: Real-time I/O data buffering in programmable logic controllers with deterministic scan cycles and strict EMI limits.

IC Role / Device Role / Timing Role: High-reliability, low-noise SRAM serving as scratchpad memory for ladder logic execution and sensor register staging.

Use Value: JEDEC center VDD/VSS layout minimizes ground bounce during rapid I/O toggling; 10 ns access ensures sub-microsecond response to interrupt-driven I/O updates.

Use Scenario: Temporary frame storage in portable ultrasound or digital X-ray units where power efficiency and thermal stability are critical.

IC Role / Device Role / Timing Role: Non-refreshing frame buffer holding digitized image data between acquisition and compression stages.

Use Value: 10 µA ISB1 enables multi-hour battery operation in standby; –40°C to +85°C rating supports operation in uncontrolled clinical environments.

Avionics Data LoggerTest & Measurement Equipment Cache

Use Scenario: Recording flight telemetry in commercial aircraft black box recorders subject to wide thermal swings and vibration.

IC Role / Device Role / Timing Role: Radiation-tolerant (by process) SRAM storing timestamped sensor logs with guaranteed write integrity under voltage transients.

Use Value: Fully static design prevents data corruption during power brownouts; industrial temp grade ensures functionality at cabin altitudes up to 40,000 ft.

Use Scenario: High-speed waveform capture buffer in oscilloscopes and logic analyzers requiring glitch-free memory access.

IC Role / Device Role / Timing Role: Deterministic latency SRAM acting as first-stage acquisition memory before DDR transfer to host processor.

Use Value: 10 ns tAA and tRC guarantee consistent sample-to-memory latency across full bandwidth; SOJ package supports reflow-soldered high-density layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62148EV30LL-10ZSXI4 Mbit (256K × 16), 10 ns, 3.3V, SOJ-44, but uses Cypress's "LL" low-power process yielding 5 µA ISB1 vs. IDT71V416L10BEI's 10 µALower standby current suits battery-critical designs; identical timing and pinout enables drop-in replacement in most layoutsSelect when ultra-low ISB1 is prioritized over legacy IDT qualification history
AS6C4008-10TIN4 Mbit (256K × 16), 10 ns, 3.3V, SOJ-44, but lacks BHE/BLE-requires external byte masking logic for 8-bit accessNot suitable for systems relying on native byte enables; requires PCB redesign if BHE/BLE signals are routedChoose only for cost-sensitive, word-only access applications where byte granularity is unused

Compared with CY62148EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V416L10BEI uniquely delivers industrial-temp-rated dual-byte enable control with JEDEC noise-optimized pinout-making it preferred for deterministic, noise-sensitive embedded systems where layout reuse and signal integrity are non-negotiable.

Availability

IDT71V416L10BEI is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics data loggers, and test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IDT71V416L10BEI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, interface, and RF solutions for communications, computing, and industrial markets.

The IDT71V416L10BEI belongs to IDT's legacy 3.3V high-speed SRAM product line, designed specifically for noise-resilient, low-power, industrial-grade memory subsystems in real-time embedded control and instrumentation.

FAQ

What is the operating temperature range for the IDT71V416L10BEI?

The IDT71V416L10BEI is rated for industrial temperature operation from –40°C to +85°C. This specification is confirmed in the Absolute Maximum Ratings and Recommended Operating Conditions tables of the official datasheet (DSC-3624/04, August 2000). The "I" suffix in the part number explicitly denotes industrial grade, distinguishing it from commercial-grade variants like IDT71V416S10BEI.

Does the IDT71V416L10BEI require a refresh circuit or clock signal?

No, the IDT71V416L10BEI is a fully static RAM and requires neither a clock nor periodic refresh. Its asynchronous design uses only control signals (CS, OE, WE, BHE, BLE) and address/data lines. This eliminates timing constraints associated with dynamic RAM and makes the IDT71V416L10BEI ideal for deterministic real-time systems such as industrial controllers and avionics data loggers.

What does the "L" in IDT71V416L10BEI signify?

The "L" in IDT71V416L10BEI denotes the low-power variant of the IDT71V416 family. It specifies reduced dynamic and standby current versus the standard-power "S" version-for example, ISB1 = 10 µA (vs. 20 µA for S-grade) and ICC = 180 mA (vs. 200 mA for S10) under identical conditions. This "L" designation is defined in the Ordering Information section of the datasheet.

Is pin 28 on the IDT71V416L10BEI required to be connected?

No, pin 28 on the IDT71V416L10BEI is designated NC (No Connect) and may be left floating or tied to VSS per the datasheet note: "Pin 28 can either be a NC or connected to Vss." It carries no internal connection and serves no functional role; grounding it adds no benefit but avoids potential floating-node concerns in high-noise environments.

What package type does the IDT71V416L10BEI use, and is it RoHS-compliant?

The IDT71V416L10BEI uses a 44-pin, 400-mil plastic SOJ (SO44-1) package, as confirmed in the Pin Configurations and Ordering Information sections. Regarding RoHS compliance: this device was released in August 2000-predating the 2006 EU RoHS Directive-and original documentation does not specify lead-free construction. For modern compliance requirements, consult Renesas' current product change notices or contact Aetrix Electronics for traceable lot-level material declarations.

IDT71V416L10BEI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

IDT71V416L10BEI FAQ

1.How can I place an order for IDT71V416L10BEI through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416L10BEI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416L10BEI reliable?

The price and inventory of IDT71V416L10BEI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416L10BEI is usually 5 days.

3.What payment methods are accepted for IDT71V416L10BEI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416L10BEI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416L10BEI?

IDT71V416L10BEI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416L10BEI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416L10BEI?

For technical support, including IDT71V416L10BEI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416L10BEI requirements.

6.How does Aetrix verify that IDT71V416L10BEI is sourced from the original manufacturer or authorized distributors?

All IDT71V416L10BEI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416L10BEI meets industry standards.

7.What is the process for return or replacement of IDT71V416L10BEI?

All IDT71V416L10BEI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416L10BEI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416L10BEI part is unused and in its original packaging.

Return procedure for IDT71V416L10BEI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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