Renesas IDT71V416L10BEI8
- Part No.:
- IDT71V416L10BEI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
IDT71V416L10BEI8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:

- Shipping:

Inventory:1,768
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
IDT71V416L10BEI8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), low-power, 3.3V CMOS static RAM with 10 ns access time, JEDEC-compliant pinout, and industrial temperature range (–40°C to +85°C). It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and operates asynchronously without clocks or refresh.
For engineers reviewing the IDT71V416L10BEI8 datasheet, IDT71V416L10BEI8 pinout, IDT71V416L10BEI8 application, or IDT71V416L10BEI8 equivalent, key selection considerations include its LVTTL-compatible I/O, dual-byte enable architecture, SOJ-44 package, 10 ns read cycle time, and industrial-grade reliability for embedded control and communications systems.
Technical Context
The IDT71V416L10BEI8 implements fully static asynchronous memory architecture with no clock or refresh required. Its address decoding supports A0–A17 (18-bit addressing), and bidirectional I/O lines (I/O0–I/O15) are LVTTL-compatible with VIL ≤ 0.8 V and VOH ≥ 2.4 V at VDD = 3.0 V.
Control logic includes independent Chip Select (CS), Output Enable (OE), Write Enable (WE), Upper Byte Enable (BHE), and Lower Byte Enable (BLE), enabling flexible byte-selective access. Timing is characterized for industrial temperature range with tAA = 10 ns, tRC = 10 ns, and tOE = 5 ns under standard AC test loads.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) |
| Access Time (tAA) | 10 ns - determines minimum address-to-data valid delay in read cycles |
| Supply Voltage | 3.0 V to 3.6 V - single 3.3V nominal rail compatible with LVTTL logic domains |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments without derating |
| Power Dissipation (Active) | 180 mA ICC (max) - low-power variant reduces dynamic current vs. standard S10 grade |
| I/O Interface | LVTTL-compatible - ensures interoperability with 3.3V microcontrollers and FPGAs |
| Package | 44-pin, 400-mil plastic SOJ (SO44-1) - JEDEC-standard footprint with center power/ground pinout |
Pinout & Package
Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center power/ground pinout optimized for noise reduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no external address latching required |
| CS | Chip Select | Active-low global enable; places device in standby when high, reducing ICC to 10 mA |
| OE | Output Enable | Active-low control for output drivers; enables fast 5 ns data access independent of CS timing |
| WE | Write Enable | Active-low signal initiating write cycles; coordinates with BHE/BLE for byte-select writes |
| BHE, BLE | Byte Enable Controls | Independent high/low byte gating - allows 8-bit access without bus contention or glue logic |
| I/O0–I/O15 | Bidirectional Data Bus | 16-bit LVTTL I/O; tristated during deselect or high-impedance states per OE/CS/BHE/BLE |
| VDD, VSS | Power/Ground | Dual VDD/VSS pairs (pins 12/25, 33/4) reduce switching noise and improve signal integrity |
Key Features
| Feature | Design Value |
|---|---|
| Low-power operation | 10 mA full standby current (ISB1) - enables always-on memory retention in battery-backed systems |
| JEDEC center power/ground pinout | Reduced simultaneous switching noise (SSN) - improves signal integrity in dense PCB layouts |
| Independent byte enable (BHE/BLE) | Eliminates need for external byte-lane multiplexing or bus transceivers in 8-bit subsystems |
| 10 ns access time at industrial temp | Guaranteed performance across –40°C to +85°C without speed binning or derating |
| Fully static design | No clocks, no refresh, no wait states - simplifies system timing and reduces FPGA/MCU resource usage |
Applications
| Industrial PLC Memory Buffer | Telecom Line Card Data Cache |
|---|---|
Use Scenario: Storing real-time I/O mapping and configuration tables in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer interfacing directly with ARM9 or ColdFire MCU local bus, providing zero-wait-state access. Use Value: 10 ns tAA and industrial temperature rating ensure deterministic response under thermal cycling and EMI stress without refresh overhead. |
Use Scenario: Holding packet header metadata and temporary frame buffers in TDM-over-IP gateway line cards. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as shared memory between DSP and network processor, accessed via byte-enable for header/body separation. Use Value: Independent BHE/BLE pins allow concurrent 8-bit header updates and 16-bit payload transfers without bus arbitration logic. |
| Medical Imaging Control Module | Avionics Display Processor Buffer |
Use Scenario: Storing calibration lookup tables and real-time sensor fusion coefficients in portable ultrasound units with strict power budgets. IC Role / Device Role / Timing Role: Low-power SRAM (10 mA ISB1) retaining critical firmware data during sleep modes while maintaining instant wake-up latency. Use Value: 3.3V LVTTL compatibility eliminates level-shifting components, reducing BOM count and board area in space-constrained enclosures. |
Use Scenario: Serving as display list memory for MIL-STD-1553B interface processors in cockpit multifunction displays. IC Role / Device Role / Timing Role: High-reliability SRAM with center VDD/VSS pinout minimizing ground bounce in safety-critical ARINC-661 graphics pipelines. Use Value: SOJ-44 package provides proven long-term solder joint reliability under vibration and thermal shock per DO-160E Section 22. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXI | 4 Mbit (256K × 16), 10 ns, 3.3V, SOJ-44, but uses different byte enable polarity (active-high BHE/BLE) | Requires inverted control logic or external inverters; not drop-in compatible | Select only if redesigning control logic to match active-high enable convention |
| AS6C4008-10TIN | 4 Mbit (256K × 16), 10 ns, 3.3V, TSOP-II-44 - same speed/temp but different package and pinout (no center VDD/VSS) | PCB layout change required; lacks JEDEC noise-reduction pinout | Choose only when TSOP-II footprint is mandated and SSN mitigation is handled elsewhere |
Compared with CY62148EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V416L10BEI8 offers guaranteed industrial-temp 10 ns access with JEDEC-optimized SOJ-44 pinout and native active-low byte enables - reducing design risk in noise-sensitive, legacy-bus-based systems.
Availability
IDT71V416L10BEI8 is available at Aetrix Electronics and suitable for industrial automation, telecom infrastructure, medical imaging, and avionics applications requiring stable component supply, long-term lifecycle support, and verified industrial-temperature performance.
Supply support for IDT71V416L10BEI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing markets.
The IDT71V416L10BEI8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for industrial and telecom systems demanding reliable, low-latency, asynchronous memory with LVTTL compatibility and robust thermal performance.
FAQ
What is the operating temperature range for IDT71V416L10BEI8?
IDT71V416L10BEI8 is rated for industrial temperature operation from –40°C to +85°C. This range is fully specified in the datasheet for all AC and DC parameters including tAA = 10 ns, ICC = 180 mA max, and ISB1 = 10 mA. The "I" suffix in the part number explicitly denotes industrial qualification, and no derating is required within this range.
Does IDT71V416L10BEI8 require external refresh circuitry?
No, IDT71V416L10BEI8 is a fully static RAM and requires no refresh cycles or clocks. Its internal circuitry maintains data indefinitely as long as VDD is applied and CS remains asserted during active use. This eliminates timing constraints on host processors and simplifies integration with microcontrollers lacking dedicated DRAM controllers.
What is the meaning of the "L10" in IDT71V416L10BEI8?
The "L10" in IDT71V416L10BEI8 indicates low-power operation with 10 ns access time. "L" designates low-power (vs. "S" for standard power), and "10" specifies the 10 ns speed grade. This combination yields reduced dynamic current (ICC = 180 mA max) and lower standby current (ISB1 = 10 mA) compared to the S10 variant, while maintaining identical timing and pinout.
Can IDT71V416L10BEI8 be used with 5V logic systems?
No, IDT71V416L10BEI8 is strictly a 3.3V LVTTL device. Its absolute maximum VDD is +4.6 V, but DC operating conditions specify VDD = 3.0–3.6 V, and input thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) are incompatible with 5V TTL logic levels. Interfacing with 5V systems requires level translation - direct connection may damage the device or cause unreliable operation.
Is the SOJ-44 package of IDT71V416L10BEI8 lead-free and RoHS compliant?
Yes, IDT71V416L10BEI8 in the SOJ-44 package (suffix "BE") is RoHS-compliant and lead-free per IDT's 2006 transition program. The "E" in "BEI8" confirms lead-free finish, and the industrial temperature grade ("I") and tape-and-reel packaging ("8") are consistent with IDT's standard RoHS-compliant ordering nomenclature documented in the August 2000 datasheet revision.
IDT71V416L10BEI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
IDT71V416L10BEI8 FAQ
1.How can I place an order for IDT71V416L10BEI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416L10BEI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416L10BEI8 reliable?
The price and inventory of IDT71V416L10BEI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416L10BEI8 is usually 5 days.
3.What payment methods are accepted for IDT71V416L10BEI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416L10BEI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V416L10BEI8?
IDT71V416L10BEI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416L10BEI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416L10BEI8?
For technical support, including IDT71V416L10BEI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416L10BEI8 requirements.
6.How does Aetrix verify that IDT71V416L10BEI8 is sourced from the original manufacturer or authorized distributors?
All IDT71V416L10BEI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416L10BEI8 meets industry standards.
7.What is the process for return or replacement of IDT71V416L10BEI8?
All IDT71V416L10BEI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416L10BEI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416L10BEI8 part is unused and in its original packaging.
Return procedure for IDT71V416L10BEI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416L10BEI8 Tags

-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology

-
AT21CS01-STUM10-T
Microchip Technology

-
AT24C02C-SSHM-T
Microchip Technology

-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics

-
AT24CS02-SSHM-T
Microchip Technology

-
93LC46BT-I/OT
Microchip Technology

-
AT24C04C-SSHM-T
Microchip Technology

-
24LC01BT-I/SN
Microchip Technology

-
24AA02UIDT-I/OT
Microchip Technology

-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…

