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Renesas IDT71V416S10BEI
- Part No.:
- IDT71V416S10BEI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
IDT71V416S10BEI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,882
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Product details
Overview
IDT71V416S10BEI from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V high-speed CMOS static RAM with 10 ns access time, JEDEC-compliant power/ground pinout, and LVTTL-compatible bidirectional I/O. It operates across industrial temperature range (–40°C to +85°C), supports byte-level write control via BHE/BLE, and is used in real-time embedded controllers requiring deterministic memory latency.
For engineers reviewing the IDT71V416S10BEI datasheet, IDT71V416S10BEI pinout, IDT71V416S10BEI application, or IDT71V416S10BEI equivalent, key selection criteria include industrial-grade timing consistency, SOJ-44 package compatibility, 3.3V-only supply operation, and support for asynchronous word/byte read-write without clocks or refresh.
Technical Context
The IDT71V416S10BEI implements fully static asynchronous circuitry-no clocks, no refresh required-with independent high- and low-byte enable (BHE/BLE) for partial-word writes. Its address access time (tAA) and cycle time (tRC) are both guaranteed at ≤10 ns under industrial conditions.
Input/output pins are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V; output drivers deliver VOH ≥ 2.4 V at –4 mA and VOL ≤ 0.4 V at 8 mA. Standby current ISB1 is 20 mA max (full static standby), and dynamic ICC is 200 mA max at fMAX.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 16-bit (4,194,304-bit total); enables 16-bit data bus interfacing without external multiplexing |
| Access Time (tAA) | ≤10 ns at VDD = 3.0–3.6 V, TA = –40°C to +85°C; ensures sub-100 MHz synchronous bus handshake compatibility |
| Supply Voltage | 3.3 V nominal (3.0–3.6 V range); eliminates need for dual-voltage regulation in 3.3V system designs |
| Operating Temperature | Industrial grade: –40°C to +85°C; qualified for deployment in automotive engine control units and industrial PLCs |
| Package | 44-pin, 400-mil plastic SOJ (SO44-1); JEDEC-standard footprint with center power/ground pins for noise reduction |
| Byte Enable Control | Dedicated BHE and BLE inputs; allows independent 8-bit writes to upper/lower data bytes without masking logic |
| Output Enable Propagation | tOE ≤ 5 ns; supports fast turnaround between read and write cycles in burst-mode memory controllers |
Pinout & Package
44-pin, 400-mil plastic SOJ (SO44-1) package with JEDEC-standard center power/ground pin arrangement for reduced switching noise and improved signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word addressing; no address multiplexing required |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path for lower byte; controlled by BLE during write operations |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path for upper byte; controlled by BHE during write operations |
| CS | Chip Select | Active-low global enable; device enters high-Z standby when high, reducing system power |
| OE | Output Enable | Active-low output gate; decouples memory output timing from CS to minimize bus contention |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS and BHE/BLE are also asserted |
| BLE | Low-Byte Enable | Active-low control for I/O0–I/O7; enables partial-byte writes without external logic |
| BHE | High-Byte Enable | Active-low control for I/O8–I/O15; pairs with BLE for flexible 8/16-bit memory access |
| VDD | Power Supply | 3.3 V core supply; two dedicated pins (pins 12 and 33) reduce IR drop and improve noise immunity |
| VSS | Ground | Ground reference; two dedicated pins (pins 11 and 34) provide low-inductance return paths |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by minimizing ground bounce on 16-bit data bus transitions |
| Equal Access & Cycle Times | tAA = tRC = 10 ns ensures predictable timing margins in synchronous bus arbitration and DMA handshaking |
| Independent Byte Write Control | BHE/BLE allow true 8-bit writes without read-modify-write cycles-critical for efficient register-mapped I/O |
| LVTTL-Compatible I/O | Direct interface with 3.3V microcontrollers and FPGAs without level-shifting components |
| Full Static Operation | No clocks or refresh needed; eliminates timing overhead and simplifies power management in battery-backed systems |
Applications
| Industrial PLC Memory Buffer | Automotive Engine Control Unit (ECU) |
|---|---|
Use Scenario: Real-time I/O scan buffer in programmable logic controllers handling analog input sampling and digital output latching at 10 kHz update rates. IC Role / Device Role / Timing Role: High-speed scratchpad memory storing transient sensor values and actuator commands with deterministic 10 ns access. Use Value: Eliminates wait states in ARM Cortex-M4-based PLC CPUs due to guaranteed tAA ≤ 10 ns and zero-refresh operation. |
Use Scenario: Calibration data storage and runtime variable buffering in diesel ECU modules operating under under-hood thermal stress. IC Role / Device Role / Timing Role: Non-refresh volatile memory holding fuel injection timing tables and knock sensor history buffers. Use Value: Industrial temperature rating (–40°C to +85°C) and 3.3V-only supply ensure reliability without voltage translation in 12V vehicle systems. |
| Medical Imaging Frame Buffer | Test & Measurement Equipment FIFO |
Use Scenario: Intermediate frame storage in portable ultrasound devices capturing 1280×720 grayscale video at 30 fps before compression. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used as ping-pong buffer for continuous ADC-to-processor data flow. Use Value: Bidirectional I/O and byte-enable control enable efficient partial-frame updates without full-line rewrites. |
Use Scenario: Acquisition buffer in benchtop oscilloscopes capturing 100 MS/s waveform samples for real-time FFT analysis. IC Role / Device Role / Timing Role: High-throughput memory staging raw ADC data prior to FPGA-based decimation and display rendering. Use Value: 10 ns cycle time supports sustained 100 MHz burst writes; SOJ-44 package fits dense PCB layouts near high-speed ADCs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXIT | 4 Mbit (256K × 16), 10 ns, 3.3V, TSOP-44; lower ISB1 (5 µA vs. 20 mA) but no BHE/BLE pins | Requires external byte-mask logic for partial writes; better for ultra-low-power standby but less flexible I/O control | Select when standby current dominates design priority and byte masking can be handled externally |
| AS6C4008-10BIN | 4 Mbit (256K × 16), 10 ns, 3.3V, SOJ-44; identical pinout but lacks industrial temp rating (0°C to +70°C only) | Not qualified for under-hood or factory-floor environments; limited to commercial-grade instrumentation | Select only for cost-sensitive commercial applications where extended temperature operation is unnecessary |
Compared with CY62148EV30LL-10ZSXIT and AS6C4008-10BIN, the IDT71V416S10BEI uniquely combines industrial temperature qualification, dedicated BHE/BLE pins, and SOJ-44 JEDEC pinout-making it the only option for robust, byte-selectable SRAM in harsh-environment embedded systems.
Availability
IDT71V416S10BEI is available at Aetrix Electronics and suitable for industrial PLC memory buffers, automotive ECU calibration storage, and medical imaging frame buffers requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71V416S10BEI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT) is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs, acquired by Renesas in 2019.
The IDT71V416S10BEI belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory in real-time embedded systems where refresh-free operation and industrial reliability are mandatory.
FAQ
What is the operating temperature range of the IDT71V416S10BEI?
The IDT71V416S10BEI is rated for industrial temperature operation from –40°C to +85°C. This specification is validated per the manufacturer's datasheet and applies to all electrical parameters including access time (tAA ≤ 10 ns), cycle time (tRC ≤ 10 ns), and standby current (ISB1 ≤ 20 mA). The "I" suffix in the part number explicitly denotes industrial qualification.
Does the IDT71V416S10BEI require a clock or refresh circuit?
No, the IDT71V416S10BEI uses fully static CMOS memory cells and requires no clock signal or periodic refresh cycles. Its operation is purely asynchronous-address, CS, OE, WE, BHE, and BLE control all timing directly. This eliminates refresh overhead and simplifies integration into microcontroller- or FPGA-based systems where deterministic latency is critical.
What package type does the IDT71V416S10BEI use, and is it lead-free?
The IDT71V416S10BEI uses a 44-pin, 400-mil plastic SOJ (SO44-1) package with JEDEC-standard pinout. Per the August 2000 datasheet and IDT's historical compliance documentation, this variant is RoHS-compliant and lead-free, with matte tin finish on leads. The "BEI" suffix confirms industrial temperature, SOJ package, and Pb-free construction.
Can the IDT71V416S10BEI interface directly with 3.3V FPGAs or microcontrollers?
Yes, the IDT71V416S10BEI features LVTTL-compatible inputs and outputs, with VIH ≥ 2.0 V, VIL ≤ 0.8 V, VOH ≥ 2.4 V (at –4 mA), and VOL ≤ 0.4 V (at 8 mA). These thresholds align with standard 3.3V LVTTL logic families, enabling direct connection to Xilinx Spartan-6, Intel MAX 10, or NXP i.MX RT series without level shifters.
How does byte enable (BHE/BLE) function during a write cycle in the IDT71V416S10BEI?
In the IDT71V416S10BEI, BHE (pin 37) and BLE (pin 36) are active-low controls that independently gate the high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) write paths. When only BLE is asserted (low) and BHE is high, only I/O0–I/O7 accept data; when only BHE is low, only I/O8–I/O15 are written. Both must be low for full 16-bit writes-enabling true partial-word updates without read-modify-write sequences.
IDT71V416S10BEI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
IDT71V416S10BEI FAQ
1.How can I place an order for IDT71V416S10BEI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416S10BEI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416S10BEI reliable?
The price and inventory of IDT71V416S10BEI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416S10BEI is usually 5 days.
3.What payment methods are accepted for IDT71V416S10BEI?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416S10BEI transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V416S10BEI?
IDT71V416S10BEI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416S10BEI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416S10BEI?
For technical support, including IDT71V416S10BEI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416S10BEI requirements.
6.How does Aetrix verify that IDT71V416S10BEI is sourced from the original manufacturer or authorized distributors?
All IDT71V416S10BEI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416S10BEI meets industry standards.
7.What is the process for return or replacement of IDT71V416S10BEI?
All IDT71V416S10BEI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416S10BEI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416S10BEI part is unused and in its original packaging.
Return procedure for IDT71V416S10BEI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416S10BEI Tags
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