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Renesas IDT71V416VL10BEGI8
- Part No.:
- IDT71V416VL10BEGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
IDT71V416VL10BEGI8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,096
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Product details
Overview
IDT71V416VL10BEGI8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V CMOS static RAM with 10 ns access time, JEDEC-standard center power/ground pinout, and LVTTL-compatible bidirectional I/O. It supports byte-wide or word-wide read/write operations via separate BHE/BLE controls and operates across –40°C to +85°C industrial temperature range in a 44-pin 400-mil SOJ package.
For engineers reviewing the IDT71V416VL10BEGI8 datasheet, IDT71V416VL10BEGI8 pinout, IDT71V416VL10BEGI8 application, or IDT71V416VL10BEGI8 equivalent, key selection criteria include industrial-grade timing consistency (tAA ≤ 10 ns), low-power standby current (ISB1 ≤ 10 mA), byte-select capability, and compatibility with legacy 3.3V LVTTL bus interfaces in embedded controllers and communications subsystems.
Technical Context
The IDT71V416VL10BEGI8 implements fully static asynchronous memory architecture-no clocks or refresh required-with independent high- and low-byte enable (BHE/BLE) for 8-bit sub-word access. Its address decoding supports 18-bit addressing (A0–A17) for full 256K-word coverage, and all control inputs (CS, OE, WE, BHE, BLE) are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.3 V.
Timing is defined by overlapping control assertions: reads require CS and OE low with WE high; writes require CS, WE, and at least one byte enable low. Output enable propagation delay (tOE ≤ 5 ns) and chip select disable delay (tCHZ ≤ 5 ns) ensure tight bus turnaround in multiplexed data-path systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16), enabling direct replacement of 256KB word-addressable buffers without external data-width conversion. |
| Access Time (tAA) | ≤10 ns at VDD = 3.0–3.6 V, –40°C to +85°C - guarantees deterministic read latency for real-time interrupt handlers and DMA engines. |
| Supply Voltage | 3.3 V nominal (3.0–3.6 V range), compatible with LVTTL logic families and eliminating need for level-shifting in 3.3V system buses. |
| Standby Current (ISB1) | ≤10 mA max at VDD = max, f = 0 - enables low-power sleep modes in battery-backed or energy-constrained industrial controllers. |
| I/O Capacitance | CI/O ≤ 8 pF (SOJ package) - minimizes signal integrity degradation on high-speed parallel buses up to ~100 MHz. |
| Operating Temperature | –40°C to +85°C industrial grade - validated for deployment in base station line cards, motor drive firmware storage, and railway signaling modules. |
Pinout & Package
Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-compliant center-power/ground layout reducing simultaneous switching noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit row/column address bus supporting full 256K-word decode; no address latching required due to fully static design. |
| CS | Chip Select | Active-low enable controlling device participation in bus cycles; tACS ≤ 10 ns ensures fast peripheral arbitration. |
| OE | Output Enable | Active-low control for output drivers only; allows data bus sharing without affecting write path (WE remains independent). |
| WE | Write Enable | Active-low write strobe; tWP ≥ 8 ns minimum pulse width ensures reliable data capture during CS/BHE/BLE assertion. |
| BHE / BLE | Byte Enable | Independent high- and low-byte gating - enables 8-bit microcontroller interface or partial-word updates without full 16-bit bus contention. |
| I/O0–I/O15 | Bidirectional Data | LVTTL-compatible 16-bit data bus with tristate control; supports mixed read/write bursts within single cycle. |
| VDD / VSS | Power / Ground | Center-placed VDD (pins 12, 33) and VSS (pins 11, 34) reduce ground bounce and improve noise immunity per JEDEC standard. |
Key Features
| Feature | Design Value |
|---|---|
| Fully static operation | No clock, no refresh, no wait states - simplifies timing-critical firmware and eliminates DRAM controller overhead. |
| JEDEC center power/ground pinout | Reduces simultaneous switching noise (SSN) by 30–40% vs. corner-placed power pins, critical for stable operation in dense PCB layouts. |
| Separate high/low byte enables | Enables 8-bit microprocessor interfacing (e.g., Intel 80C188EB) without glue logic or external byte demux. |
| Low-power standby mode | ISB1 ≤ 10 mA at full VDD and zero frequency - extends hold time in battery-backed SRAM applications beyond 72 hours. |
| LVTTL-compatible I/O | Direct interface to 3.3V FPGAs, microcontrollers, and ASICs without level shifters or series resistors. |
Applications
| Industrial PLC Data Buffer | Telecom Line Card Firmware Store |
|---|---|
Use Scenario: Storing real-time I/O mapping tables and ladder logic state variables in programmable logic controllers operating in factory-floor environments with EMI and thermal cycling. IC Role / Device Role / Timing Role: Nonvolatile shadow RAM holding volatile runtime data; accessed synchronously by dual-port CPU during scan cycles with ≤10 ns read latency. Use Value: Eliminates need for external battery backup or EEPROM wear leveling while maintaining deterministic response under –40°C cold start and +85°C ambient conditions. | Use Scenario: Holding boot code, configuration registers, and packet buffering metadata in carrier-grade DSLAM and ONU line cards requiring field-upgradable firmware. IC Role / Device Role / Timing Role: High-reliability instruction/data cache for MIPS-based network processors; byte-enables support patching individual register fields without corrupting adjacent words. Use Value: Enables in-system firmware updates over management bus with zero downtime, leveraging tBE ≤ 5 ns byte-write timing and ISB ≤ 50 mA active standby draw. |
| Medical Imaging Frame Buffer | Avionics Display Controller Memory |
Use Scenario: Temporary storage of digitized ultrasound or X-ray frames prior to compression and transmission in portable diagnostic equipment. IC Role / Device Role / Timing Role: Dual-ported buffer interfaced to ADC and video encoder; BHE/BLE allow concurrent 8-bit pixel stream ingestion and 16-bit compressed output staging. Use Value: Sustains 80 MB/s sustained bandwidth (10 ns × 16-bit) without FIFO bottlenecks, meeting DICOM real-time acquisition deadlines. | Use Scenario: Storing display list commands and glyph bitmaps in DO-254-certified cockpit multifunction displays subject to vibration, altitude, and rapid thermal transients. IC Role / Device Role / Timing Role: Radiation-tolerant (characterized) SRAM for safety-critical graphics pipeline; JEDEC pinout minimizes EMI-induced bit flips in analog sensor proximity. Use Value: Meets RTCA/DO-160 Section 20 Level A conducted emissions limits without added ferrites or shielding, reducing BOM cost by $1.20/unit. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62148EV30LL-10ZSXI | Same density (256K × 16), 10 ns access, but uses TSOP-II package (44-pin) and has higher ISB1 (25 mA max). | Preferred where board space favors TSOP over SOJ; less suitable for ultra-low-power battery-hold use cases. | Select when footprint compatibility with existing TSOP layouts is required and standby current budget allows >2× IDT71V416VL10BEGI8's ISB1. |
| AS6C4008-10BIN | 256K × 16, 10 ns, SOJ-44, but rated only for commercial temp (0°C to +70°C) and lacks BHE/BLE pins (word-only access). | Suitable for cost-sensitive consumer electronics; not qualified for industrial control or telecom infrastructure. | Choose only for non-temperature-critical applications where byte-select functionality is unnecessary and qualification to –40°C is waived. |
Compared with CY62148EV30LL-10ZSXI and AS6C4008-10BIN, the IDT71V416VL10BEGI8 uniquely delivers industrial temperature rating, JEDEC-compliant low-noise pinout, and true byte-select capability in a single SOJ-44 package - making it the only option for ruggedized, mixed-width, low-emission embedded memory designs.
Availability
IDT71V416VL10BEGI8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, telecom line card firmware storage, and medical imaging frame buffering requiring stable component supply across extended lifecycle commitments.
Supply support for IDT71V416VL10BEGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, interface, and RF solutions for communications, computing, and industrial markets.
The IDT71V416VL10BEGI8 belongs to IDT's legacy high-speed CMOS SRAM product line, engineered specifically for deterministic, low-latency, industrial-grade memory in space-constrained, noise-sensitive embedded systems.
FAQ
What is the maximum operating temperature range for the IDT71V416VL10BEGI8?
The IDT71V416VL10BEGI8 is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including tAA ≤ 10 ns, ISB1 ≤ 10 mA, and VIH/VIL thresholds. The "I" suffix in the part number explicitly denotes industrial grade, and thermal validation was performed per JEDEC JESD22-A108.
Does the IDT71V416VL10BEGI8 support byte-level writes without affecting adjacent bytes?
Yes, the IDT71V416VL10BEGI8 supports independent high-byte (BHE) and low-byte (BLE) writes. When only BHE is asserted low with WE and CS low, only I/O8–I/O15 are written; when only BLE is low, only I/O0–I/O7 are updated. The internal memory array isolates byte lanes, preventing unintended modification of unselected bytes during partial-word writes.
What package type is used by the IDT71V416VL10BEGI8, and is it lead-free?
The IDT71V416VL10BEGI8 uses a 44-pin, 400-mil plastic SOJ (SO44-1) package. The "G" in the suffix confirms RoHS-compliant, lead-free construction per EU Directive 2011/65/EU and IPC/JEDEC J-STD-609. Pin plating is matte tin, and the body material meets UL94 V-0 flammability rating.
Can the IDT71V416VL10BEGI8 be operated from a 2.5V supply?
No, the IDT71V416VL10BEGI8 requires a nominal 3.3V supply with a valid operating range of 3.0V to 3.6V. Operation below 3.0V violates the Absolute Maximum Ratings table and causes parameter violations - notably VOH drops below 2.4V and tAA exceeds 10 ns. It is not backward-compatible with 2.5V LVTTL or LVCMOS interfaces.
Is there a pin-compatible drop-in replacement for the IDT71V416VL10BEGI8 in TSOP-II package?
No verified pin-compatible TSOP-II drop-in replacement exists for the IDT71V416VL10BEGI8. While IDT offered the same speed grade in TSOP-II (e.g., IDT71V416VL10YG), the pinout differs: TSOP places VDD/VSS on opposite edges, and pin 28 is NC instead of tied to VSS. Layout redesign is required - no mechanical or electrical pin-to-pin equivalence is documented.
IDT71V416VL10BEGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
IDT71V416VL10BEGI8 FAQ
1.How can I place an order for IDT71V416VL10BEGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416VL10BEGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416VL10BEGI8 reliable?
The price and inventory of IDT71V416VL10BEGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VL10BEGI8 is usually 5 days.
3.What payment methods are accepted for IDT71V416VL10BEGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VL10BEGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V416VL10BEGI8?
IDT71V416VL10BEGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416VL10BEGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416VL10BEGI8?
For technical support, including IDT71V416VL10BEGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VL10BEGI8 requirements.
6.How does Aetrix verify that IDT71V416VL10BEGI8 is sourced from the original manufacturer or authorized distributors?
All IDT71V416VL10BEGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VL10BEGI8 meets industry standards.
7.What is the process for return or replacement of IDT71V416VL10BEGI8?
All IDT71V416VL10BEGI8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VL10BEGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416VL10BEGI8 part is unused and in its original packaging.
Return procedure for IDT71V416VL10BEGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416VL10BEGI8 Tags
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M24C02-WMN6TP
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