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Renesas IDT71V416VL10PH

Part No.:
IDT71V416VL10PH
Manufacturer:
Renesas
Category:
Memory
Package:
44-TSOP (0.400", 10.16mm Width)
Datasheet:
AetrixIDT71V416VL10PH.pdf
Description:
IC SRAM 4MBIT PARALLEL 44TSOP II
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,776

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Product details

Overview

IDT71V416VL10PH from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, and LVTTL-compatible bidirectional I/O. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory interfacing in embedded controllers and industrial data acquisition systems.

For engineers reviewing the IDT71V416VL10PH datasheet, IDT71V416VL10PH pinout, IDT71V416VL10PH application, or IDT71V416VL10PH equivalent, key selection criteria include its 10 ns read cycle time, SOJ-44 package with JEDEC-compliant power/ground pinout, low-power standby current (10 mA max), and industrial temperature range (–40°C to +85°C).

Technical Context

The IDT71V416VL10PH implements fully static asynchronous circuitry-no clocks or refresh required-and uses IDT's high-reliability CMOS process. Its address decoding supports A0–A17 (18-bit addressing), enabling direct mapping into 32-bit microprocessor data buses with byte-level granularity via BHE/BLE control.

Timing is governed by three independent control paths: CS-driven, OE-driven, and byte-enable-driven read/write cycles. The device guarantees tAA = 10 ns, tCLZ = 4 ns, and tOE = 5 ns under industrial conditions, with all I/O pins meeting LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16), supporting 16-bit parallel data bus interfaces without external multiplexing.
Access Time (tAA)10 ns maximum - enables direct interface with 80 MHz bus systems requiring sub-100 ns total read latency.
Supply Voltage3.0 V to 3.6 V - compatible with standard 3.3 V logic rails and tolerant of typical PCB voltage droop.
Standby Current (ISB1)10 mA maximum - ensures low power consumption during processor idle states in battery-backed or energy-sensitive systems.
Operating Temperature–40°C to +85°C - qualified for industrial automation, motor control, and transportation electronics environments.
I/O InterfaceLVTTL-compatible inputs/outputs - eliminates need for level-shifting when interfacing with FPGA I/O banks or microcontroller GPIOs rated for 3.3 V.
Package44-pin, 400-mil plastic SOJ (SO44-1) - surface-mountable with JEDEC-standard pinout reducing simultaneous switching noise (SSN).

Pinout & Package

44-pin, 400-mil plastic SOJ (SO44-1) package with JEDEC center power/ground pinout for reduced noise coupling. Pin 28 is NC or optionally connected to VSS.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus accepting full 256K-word space; no internal address latching required.
CSChip SelectActive-low enable controlling overall device activation; used for memory bank selection in multi-SRAM systems.
OEOutput EnableActive-low control for tri-state output drivers; allows shared data bus arbitration with other peripherals.
WEWrite EnableActive-low signal initiating write cycles; timing-critical for meeting tWP ≥ 8 ns minimum pulse width.
BHE / BLEByte EnableIndependent high/low byte controls enabling 8-bit writes without disturbing adjacent byte - essential for mixed-width data transfers.
I/O0–I/O15Bidirectional Data16-bit LVTTL I/O bus with internal direction control; no external transceivers needed for 16-bit microprocessor interfaces.
VDD / VSSPower / GroundDual VDD/VSS pairs (pins 12/13 and 33/34) placed centrally per JEDEC spec to minimize IR drop and ground bounce.

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise by symmetrically distributing VDD/VSS across the SOJ package body.
Separate Byte Enables (BHE/BLE)Enables atomic 8-bit writes to upper or lower byte without read-modify-write overhead in real-time firmware.
5 ns Output Enable PropagationSupports fast burst reads in microcontroller-based systems where OE is toggled per word access.
Full Static OperationEliminates refresh circuitry and associated timing constraints - simplifies PCB layout and firmware design.
Industrial Temperature RangeValidated operation from –40°C to +85°C ensures reliability in uncontrolled ambient environments like factory floors.

Applications

Industrial PLC Memory BufferMedical Imaging Data Cache

Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers operating in harsh electrical environments.

IC Role / Device Role / Timing Role: Asynchronous SRAM providing deterministic 10 ns read/write response to dual-port microcontroller cores without clock domain crossing.

Use Value: JEDEC-compliant SOJ package minimizes EMI-induced bit errors; industrial temp rating ensures uptime in non-climate-controlled cabinets.

Use Scenario: Temporary storage of digitized X-ray or ultrasound frames prior to compression and transmission in portable diagnostic equipment.

IC Role / Device Role / Timing Role: High-bandwidth 16-bit data buffer interfacing directly with ADC output and FPGA image processing pipeline.

Use Value: 10 ns access time enables >80 MB/s sustained throughput; low standby current extends battery life between imaging sessions.

Avionics Sensor Fusion ModuleRailway Signaling Controller

Use Scenario: Aggregating inertial measurement unit (IMU), GPS, and barometric sensor streams in flight control units requiring deterministic latency.

IC Role / Device Role / Timing Role: Non-refreshing memory holding timestamped sensor samples for Kalman filter execution on safety-critical DSPs.

Use Value: Full static operation removes timing jitter from refresh cycles; –40°C to +85°C rating meets DO-160E environmental test requirements.

Use Scenario: Storing interlocking logic tables and train position history in wayside signaling controllers deployed along rail corridors.

IC Role / Device Role / Timing Role: Reliable, long-life memory element retaining critical safety state during power interruptions and electromagnetic interference events.

Use Value: Low ISB1 (10 mA) supports extended backup battery runtime; SOJ package resists vibration-induced solder fatigue.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-10ZSXI4-Mbit (256K × 16), 10 ns, 3.3 V, SOJ-44 - identical speed and voltage but Cypress uses different byte enable polarity (active-high vs. IDT's active-low).Requires inverting logic on BHE/BLE lines or firmware adaptation for byte write control.Select only if existing board layout already accommodates active-high byte enables or logic inversion is feasible.
AS6C4008-10BIN4-Mbit (256K × 16), 10 ns, 3.3 V, SOJ-44 - same timing and package, but lacks dedicated OE pin (output enable integrated into CS function).Cannot support shared data bus arbitration without external gating; limits multi-peripheral bus designs.Prefer for simple point-to-point interfaces where OE functionality is unnecessary and cost is primary driver.

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10BIN, the IDT71V416VL10PH provides explicit OE control and active-low byte enables - critical for deterministic bus sharing and legacy microprocessor compatibility in industrial control systems.

Availability

IDT71V416VL10PH is available at Aetrix Electronics and suitable for industrial PLC memory buffers, medical imaging data caches, and avionics sensor fusion modules requiring stable component supply across extended product lifecycles.

Supply support for IDT71V416VL10PH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory, and interface solutions for communications, computing, and industrial markets.

The IDT71V416VL10PH belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in real-time embedded systems where refresh-free operation and industrial-grade reliability are mandatory.

FAQ

What is the operating temperature range for the IDT71V416VL10PH?

The IDT71V416VL10PH is rated for industrial operation from –40°C to +85°C. This specification is validated per the manufacturer's recommended DC operating conditions and AC timing parameters across the full range, making it suitable for deployment in factory automation, transportation, and outdoor infrastructure applications where ambient temperatures exceed commercial limits.

Does the IDT71V416VL10PH require a refresh circuit?

No, the IDT71V416VL10PH is a fully static RAM and requires no refresh cycles. Its asynchronous architecture uses only address, control, and data signals - eliminating clock dependencies and refresh timing constraints. This simplifies system design and guarantees deterministic access latency, a key advantage over DRAM in real-time control applications.

What package type does the IDT71V416VL10PH use?

The IDT71V416VL10PH uses a 44-pin, 400-mil plastic SOJ (SO44-1) package with JEDEC-standard center power/ground pinout. Pin 28 is designated NC but may be tied to VSS for improved grounding. This package supports reflow soldering and is compatible with standard SOJ footprint layouts.

How does the byte enable functionality work on the IDT71V416VL10PH?

The IDT71V416VL10PH features two independent byte enable inputs: BHE (high byte enable) and BLE (low byte enable), both active-low. When BHE is low and BLE is high, only I/O8–I/O15 are written; when BLE is low and BHE is high, only I/O0–I/O7 are written. Both low enables full 16-bit word access - enabling precise byte-level memory updates without read-modify-write sequences.

What is the maximum dynamic operating current for the IDT71V416VL10PH?

The maximum dynamic operating current (ICC) for the IDT71V416VL10PH is 200 mA under industrial conditions (–40°C to +85°C) at VDD = 3.6 V and maximum frequency operation. This value reflects worst-case current draw during continuous read/write cycling and informs power supply sizing and thermal design for dense memory subsystems.

IDT71V416VL10PH Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-TSOP (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-TSOP II

IDT71V416VL10PH FAQ

1.How can I place an order for IDT71V416VL10PH through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VL10PH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VL10PH reliable?

The price and inventory of IDT71V416VL10PH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VL10PH is usually 5 days.

3.What payment methods are accepted for IDT71V416VL10PH?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VL10PH transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VL10PH?

IDT71V416VL10PH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VL10PH order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VL10PH?

For technical support, including IDT71V416VL10PH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VL10PH requirements.

6.How does Aetrix verify that IDT71V416VL10PH is sourced from the original manufacturer or authorized distributors?

All IDT71V416VL10PH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VL10PH meets industry standards.

7.What is the process for return or replacement of IDT71V416VL10PH?

All IDT71V416VL10PH units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VL10PH, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VL10PH part is unused and in its original packaging.

Return procedure for IDT71V416VL10PH:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71V416VL10PH Tags

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