Renesas IDT71V416VL12BE

Overview

IDT71V416VL12BE from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, and LVTTL-compatible I/O. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory control in embedded systems requiring deterministic timing and low-noise data paths.

For engineers reviewing the IDT71V416VL12BE datasheet, IDT71V416VL12BE pinout, IDT71V416VL12BE application, or IDT71V416VL12BE equivalent, key selection criteria include its 12 ns read cycle time, JEDEC-compliant SOJ/TSOP pinout, industrial temperature range (–40°C to +85°C), and support for word/byte-level writes without external logic.

Technical Context

The IDT71V416VL12BE implements fully static asynchronous circuitry-no clocks or refresh required-and uses IDT's high-reliability CMOS process to achieve stable operation across industrial temperatures. Its dual-byte enable architecture allows independent access to upper and lower 8-bit data lanes, enabling efficient 8-bit peripheral interfacing alongside 16-bit host buses.

Timing is controlled via three independent enable paths: chip-select–driven (tACS = 12 ns), output-enable–driven (tOE = 6 ns), and byte-enable–driven (tBE = 6 ns), all guaranteed under worst-case industrial conditions. All inputs and outputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V ±10%.

Key Specifications

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center power/ground pinout for reduced switching noise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with CY62148EV30LL-12ZSXI and AS6C4008-12ZIN, the IDT71V416VL12BE uniquely combines industrial temperature rating, JEDEC SOJ pinout compatibility, and true independent byte enables-making it the only drop-in replacement for legacy IDT-based industrial memory subsystems.

Availability

IDT71V416VL12BE is available at Aetrix Electronics and suitable for industrial PLCs, network packet buffers, medical imaging frame stores, and avionics display controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IDT71V416VL12BE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs.

The IDT71V416VL12BE belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory expansion in industrial and communications infrastructure where refresh-free operation and noise-immune packaging are critical.

FAQ

What is the maximum operating frequency supported by the IDT71V416VL12BE?

The IDT71V416VL12BE does not use a clock and therefore has no operating frequency specification. Its performance is defined by timing parameters: tRC = 12 ns minimum cycle time corresponds to an effective 83 MHz bus bandwidth. This allows reliable interfacing with microprocessors and FPGAs running at up to 80 MHz without wait states, provided address and control setup/hold times are met.

Does the IDT71V416VL12BE require external refresh circuitry?

No, the IDT71V416VL12BE is a fully static RAM and requires no refresh cycles or external refresh circuitry. Its internal latches retain data indefinitely as long as power is applied and CS remains high during standby. This eliminates timing-critical refresh overhead in real-time systems and simplifies controller firmware design for the IDT71V416VL12BE.

Can the IDT71V416VL12BE be used with 5 V logic interfaces?

No, the IDT71V416VL12BE is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V at VDD = 3.0 V. Direct connection to 5 V logic will exceed voltage ratings and risk damage. Level translation (e.g., TXB0108 or discrete resistive dividers) is required for 5 V system integration with the IDT71V416VL12BE.

What is the function of Pin 28 on the IDT71V416VL12BE SOJ package?

Pin 28 on the IDT71V416VL12BE in the 44-pin SOJ package is designated NC* (No Connect), meaning it is not internally bonded and may be left unconnected or tied to VSS per board layout requirements. The datasheet explicitly states "Pin 28 can either be a NC or connected to Vss", confirming its optional grounding for mechanical stability or noise reduction-but it has no electrical function in the IDT71V416VL12BE operation.

How does the IDT71V416VL12BE handle simultaneous read and write operations on different byte lanes?

The IDT71V416VL12BE does not support true simultaneous read/write. However, its independent BHE and BLE controls allow byte-selective writes while preserving data on the opposite byte lane-e.g., writing to I/O0–I/O7 (low byte) while reading I/O8–I/O15 (high byte) in separate cycles. This avoids full-word overwrite and reduces software overhead, but each access remains atomic per cycle. The IDT71V416VL12BE enforces sequential execution per address location.