Renesas IDT71V416VL12BE8
- Part No.:
- IDT71V416VL12BE8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 48-TFBGA
- Datasheet:
-
IDT71V416VL12BE8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 48CABGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
IDT71V416VL12BE8 from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 12 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in industrial temperature range (–40°C to +85°C) and is used in real-time data buffering for network packet processors and FPGA-based control systems.
For engineers reviewing the IDT71V416VL12BE8 datasheet, IDT71V416VL12BE8 pinout, IDT71V416VL12BE8 application, or IDT71V416VL12BE8 equivalent, key selection criteria include 12 ns read cycle time, industrial-grade reliability, SOJ-44 package compatibility, and support for independent high/low byte enables in embedded memory subsystems.
Technical Context
The IDT71V416VL12BE8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses dual byte enable (BHE/BLE) logic to gate 8-bit segments of the 16-bit bidirectional data bus independently. Its address decoding supports 18-bit addressing (A0–A17) for full 256K-word access.
Operation relies on three active-low control signals: Chip Select (CS), Output Enable (OE), and Write Enable (WE), with timing validated under AC test loads (30 pF, 50 Ω). The device guarantees tAA ≤ 12 ns, tRC ≤ 12 ns, and tOE ≤ 6 ns across –40°C to +85°C at VDD = 3.0–3.6 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16 organization) |
| Access Time (tAA) | 12 ns maximum - determines minimum address hold before valid data output |
| Read Cycle Time (tRC) | 12 ns maximum - defines shortest interval between successive reads |
| Supply Voltage | 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails without level shifting |
| Operating Temperature | –40°C to +85°C - qualified for industrial environments including base station control cards |
| I/O Interface | LVTTL-compatible - ensures direct interfacing with FPGA I/O banks and microcontroller data buses |
| Power Dissipation | ISB1 ≤ 10 mA in full standby - enables low-power sleep modes in battery-backed systems |
Pinout & Package
Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center power/ground layout (VDD/VSS on pins 12 & 33, respectively).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K-word decode; A0 is LSB |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path enabled by BLE; LVTTL-compatible |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path enabled by BHE; independent of low-byte control |
| CS | Chip Select | Active-low global enable; deassertion places all outputs in high-Z |
| OE | Output Enable | Active-low read control; allows output gating without disabling chip |
| WE | Write Enable | Active-low write strobe; controls direction of I/O buffers during write cycles |
| BLE | Low-Byte Enable | Active-low; enables I/O0–I/O7 during byte writes or reads |
| BHE | High-Byte Enable | Active-low; enables I/O8–I/O15 during byte writes or reads |
| VDD | Power Supply | +3.3 V supply (pins 12 and 33); decoupling required per JEDEC noise guidelines |
| VSS | Ground | Reference ground (pins 11 and 34); center placement reduces switching noise |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise (SSN) by symmetrically distributing VDD/VSS around the perimeter |
| Dual Independent Byte Enables (BHE/BLE) | Enables partial-word writes without external logic, reducing bus contention in multiprocessor systems |
| 5 ns Output Enable Propagation | Supports fast burst reads in pipelined architectures where OE is toggled per word |
| Full Standby Current ≤ 10 mA | Permits integration into power-constrained industrial controllers with extended sleep intervals |
| Single 3.3 V Supply Operation | Eliminates need for dual-voltage regulators, simplifying PCB power delivery design |
Applications
| Industrial PLC Memory Buffer | FPGA Configuration Data Cache |
|---|---|
Use Scenario: Real-time I/O scanning in programmable logic controllers requiring deterministic memory access latency. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer storing process variable snapshots between scan cycles. Use Value: 12 ns tAA ensures sub-microsecond response to fieldbus interrupt requests, meeting IEC 61131-3 cycle-time requirements. | Use Scenario: Storing configuration bitstreams and runtime lookup tables for Xilinx Spartan or Intel Cyclone FPGAs. IC Role / Device Role / Timing Role: Off-chip fast-access memory mapped to FPGA's parallel slave select interface. Use Value: LVTTL-compatible I/O and 12 ns access enable direct connection to FPGA data bus without glue logic or level translators. |
| Telecom Line Card Packet Buffer | Medical Imaging Frame Store |
Use Scenario: Temporary storage of Ethernet or TDM packets in carrier-grade line cards prior to switching or processing. IC Role / Device Role / Timing Role: Dual-port-capable SRAM used in ping-pong buffer configuration for zero-drop packet handling. Use Value: Independent BHE/BLE control allows concurrent high/low byte writes from separate DMA channels, doubling effective throughput. | Use Scenario: Intermediate frame storage in ultrasound or digital radiography systems during image acquisition and preprocessing. IC Role / Device Role / Timing Role: High-reliability memory holding uncompressed 16-bit pixel data before compression or display rendering. Use Value: Industrial temperature rating (–40°C to +85°C) and 10 mA ISB1 ensure stable operation in fanless medical enclosures with thermal cycling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-45ZSXI | 4 Mbit (256K × 16), 45 ns access, 3.3 V, SOJ-44, but higher power (ISB = 25 mA) | Targeted at cost-sensitive industrial designs where speed >12 ns is acceptable | Select when lower cost outweighs need for 12 ns timing and ultra-low standby current |
| AS6C4008-12PIN | 4 Mbit (256K × 16), 12 ns access, 3.3 V, SOJ-44, but commercial temp only (0°C to +70°C) | Suitable for non-ruggedized consumer or lab equipment with controlled ambient | Select only if industrial temperature range is not required and board-level thermal management is assured |
Compared with CY62167EV30LL-45ZSXI and AS6C4008-12PIN, the IDT71V416VL12BE8 uniquely delivers 12 ns performance *plus* industrial temperature rating *plus* ≤10 mA full-standby current in the same SOJ-44 footprint-making it optimal for thermally constrained, mission-critical embedded systems.
Availability
IDT71V416VL12BE8 is available at Aetrix Electronics and suitable for industrial PLCs, telecom line cards, FPGA-based accelerators, and medical imaging subsystems requiring stable component supply across extended product lifecycles.
Supply support for IDT71V416VL12BE8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and sensor signal conditioning ICs.
The IDT71V416VL12BE8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for low-latency, no-refresh memory expansion in industrial and communications infrastructure equipment.
FAQ
What is the operating temperature range specified for the IDT71V416VL12BE8?
The IDT71V416VL12BE8 is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including access time (tAA ≤ 12 ns), cycle time (tRC ≤ 12 ns), and standby current (ISB1 ≤ 10 mA), making it suitable for deployment in uncontrolled environmental conditions such as outdoor telecom cabinets or factory-floor controllers.
Does the IDT71V416VL12BE8 require a refresh circuit or clock signal?
No, the IDT71V416VL12BE8 is a fully static RAM and requires no refresh circuitry or clock input. Its internal design uses static latches for memory cell storage, enabling indefinite data retention as long as power is applied and CS remains asserted. This eliminates timing-critical refresh overhead in microcontroller or FPGA-based systems, simplifying firmware and HDL design for the IDT71V416VL12BE8.
Can the IDT71V416VL12BE8 be used with 5 V logic interfaces?
No, the IDT71V416VL12BE8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH(min) is 2.0 V at VDD = 3.0 V. Direct connection to 5 V logic will exceed voltage ratings and risk damage. Level translation (e.g., TXB0108 or discrete resistor dividers) is required for interoperability with 5 V systems using the IDT71V416VL12BE8.
What is the function of pins BHE and BLE on the IDT71V416VL12BE8?
BHE (Bus High Enable) and BLE (Bus Low Enable) are active-low byte-select controls on the IDT71V416VL12BE8. BHE gates I/O8–I/O15 (high byte), while BLE gates I/O0–I/O7 (low byte). When used independently, they allow 8-bit partial-word writes or reads without affecting the opposite byte-critical for efficient data movement in 8-bit peripheral interfaces or byte-aligned DMA transfers involving the IDT71V416VL12BE8.
Is the IDT71V416VL12BE8 pin-compatible with other speed grades in the same family?
Yes, the IDT71V416VL12BE8 shares identical pinout and package (44-pin SOJ) with other members of the IDT71V416VL family-including VL10 and VL15 variants-as confirmed by the manufacturer's ordering diagram and pin configuration drawings. Signal assignments, power/ground locations, and control pin functions are invariant across speed grades, enabling drop-in replacement during design validation or yield optimization without PCB revision for the IDT71V416VL12BE8.
IDT71V416VL12BE8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 48-TFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 12ns
- Access Time:
- 12 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 48-CABGA (9x9)
IDT71V416VL12BE8 FAQ
1.How can I place an order for IDT71V416VL12BE8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416VL12BE8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416VL12BE8 reliable?
The price and inventory of IDT71V416VL12BE8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VL12BE8 is usually 5 days.
3.What payment methods are accepted for IDT71V416VL12BE8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VL12BE8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V416VL12BE8?
IDT71V416VL12BE8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416VL12BE8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416VL12BE8?
For technical support, including IDT71V416VL12BE8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VL12BE8 requirements.
6.How does Aetrix verify that IDT71V416VL12BE8 is sourced from the original manufacturer or authorized distributors?
All IDT71V416VL12BE8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VL12BE8 meets industry standards.
7.What is the process for return or replacement of IDT71V416VL12BE8?
All IDT71V416VL12BE8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VL12BE8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416VL12BE8 part is unused and in its original packaging.
Return procedure for IDT71V416VL12BE8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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