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Renesas IDT71V416VL15BE8

Part No.:
IDT71V416VL15BE8
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixIDT71V416VL15BE8.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,150

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Product details

Overview

IDT71V416VL15BE8 from Integrated Device Technology is a 4,194,304-bit (256K × 16) high-speed CMOS static RAM operating from a single 3.3 V supply, with 15 ns access time, JEDEC-compliant center power/ground pinout, and LVTTL-compatible bidirectional I/O. It serves as a non-refreshing, fully static memory buffer in industrial embedded controllers requiring deterministic timing and byte-level write control.

For engineers reviewing the IDT71V416VL15BE8 datasheet, IDT71V416VL15BE8 pinout, IDT71V416VL15BE8 application, or IDT71V416VL15BE8 equivalent, key selection criteria include its 15 ns read cycle time, dual byte enable (BHE/BLE), SOJ-44 package with 400-mil width, industrial temperature range (–40°C to +85°C), and low-power standby current of 40 mA max.

Technical Context

The IDT71V416VL15BE8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS fabrication for stable operation across industrial thermal conditions. Its architecture supports independent high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) writes via dedicated BHE and BLE inputs, enabling efficient 8-bit data transfers within 16-bit bus systems.

Timing is controlled by three independent enables: Chip Select (CS), Output Enable (OE), and Write Enable (WE), with guaranteed tCLZ ≤ 4 ns and tOHZ ≤ 7 ns. The device features JEDEC-standard pinout with VDD/VSS pairs centered on pins 12/13 and 33/34 to minimize simultaneous switching noise in dense PCB layouts.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16), supporting full-word or byte-aligned data storage without external logic
Access Time (tAA)15 ns max at VDD = 3.0–3.6 V, –40°C to +85°C - defines minimum address-to-data valid delay in read cycles
Supply Voltage3.3 V ±10% (3.0–3.6 V), compatible with LVTTL logic families and eliminating level-shifting requirements
Standby Current (ISB)40 mA max (industrial grade), enabling low-power hold mode during processor sleep or bus arbitration gaps
Byte EnablesBHE and BLE inputs allow independent 8-bit write operations to upper or lower data byte lanes
Output DriveLVTTL-compatible I/O (VOH ≥ 2.4 V @ IOH = –4 mA; VOL ≤ 0.4 V @ IOL = 8 mA) ensures direct interface with FPGA/CPLD I/O banks
Package44-pin plastic SOJ (SO44-1), 400-mil width, JEDEC MO-118 compliant - validated for wave-solder and reflow assembly

Pinout & Package

44-pin plastic SOJ (SO44-1), 400-mil body width, JEDEC MO-118 compliant, with center-aligned VDD/VSS pairs for noise reduction.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word addressing; no internal latching - requires stable address during CS low
CSChip SelectActive-low enable; device enters standby (high-Z I/O, ISB ≤ 40 mA) when high
OEOutput EnableActive-low control for output drivers; tOE ≤ 7 ns ensures fast read turnaround in burst-access systems
WEWrite EnableActive-low write strobe; combined with BHE/BLE determines byte write direction and data capture window
BHE, BLEByte Enable InputsIndependent active-low controls for high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) write operations
I/O0–I/O15Bidirectional Data BusLVTTL-compatible 16-bit I/O; high-impedance state when CS high or OE high - enables bus sharing
VDDPower Supply3.3 V main supply; pins 12 and 33 provide distributed power delivery per JEDEC center-pin standard
VSSGroundReference ground; pins 11 and 34 provide symmetric return path to reduce ground bounce

Key Features

FeatureDesign Value
Fully static operationNo clock, no refresh, no wait states - simplifies timing-critical controller designs and eliminates dynamic power overhead
JEDEC center power/ground pinoutVDD/VSS pairs at pins 11–12 and 33–34 suppress simultaneous switching noise in multi-SRAM systems
Dual byte write controlIndependent BHE/BLE inputs enable precise 8-bit updates without masking logic or extra glue components
Industrial temperature rangeSpecified operation from –40°C to +85°C - qualified for use in motor drives, PLCs, and outdoor telecom equipment
Low-power standby modeISB ≤ 40 mA (max) at VDD = 3.6 V enables energy-efficient idle states in battery-backed or fanless systems

Applications

Industrial PLC Data BufferMedical Imaging Frame Store

Use Scenario: Real-time I/O scanning and register mapping in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Static RAM buffer holding input/output image tables and intermediate calculation results between CPU fetches.

Use Value: 15 ns tAA and tRC guarantee sub-20 ns memory access, meeting hard real-time deadlines in 100 µs scan intervals.

Use Scenario: Temporary storage of digitized X-ray or ultrasound frames before compression and transmission.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly to ADC/DAC controllers via 16-bit parallel bus.

Use Value: Dual byte enables (BHE/BLE) allow partial-frame writes during live acquisition, reducing bus contention with display subsystems.

Avionics Sensor Interface ModuleTest Equipment Pattern Memory

Use Scenario: Storing calibrated sensor coefficients and real-time telemetry buffers in flight control units.

IC Role / Device Role / Timing Role: Non-volatile-configurable memory mapped into microcontroller address space for fast coefficient lookup.

Use Value: Industrial-grade temperature rating (–40°C to +85°C) and SOJ package ensure reliability under thermal cycling and vibration stress.

Use Scenario: Holding stimulus/response patterns in automated test equipment for semiconductor wafer probing.

IC Role / Device Role / Timing Role: High-speed pattern store accessed synchronously by test sequencer logic with minimal latency jitter.

Use Value: tCLZ ≤ 4 ns and tOH = 4 ns enable tight setup/hold margins for 66 MHz pattern clocks without added timing margin.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-45ZAXI512K × 16 organization, 45 ns access, 3.3 V, TSOP-44 packageHigher density but slower speed; suitable where capacity > speedSelect if system requires >256K words and can tolerate longer read cycles
AS6C4008-15ZIN256K × 16, 15 ns, 3.3 V, SOJ-44, but no BHE/BLE - byte write requires external logicLacks native byte enable; increases board complexity for partial writesChoose only if BHE/BLE functionality is unused and cost is primary constraint

Compared with CY62167EV30LL-45ZAXI and AS6C4008-15ZIN, the IDT71V416VL15BE8 uniquely delivers 15 ns access with integrated BHE/BLE in an industrial-rated SOJ-44 package - critical for deterministic real-time buffering where byte-granular writes and thermal robustness are mandatory.

Availability

IDT71V416VL15BE8 is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, avionics sensor interfaces, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for IDT71V416VL15BE8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology, Inc. (IDT) was a fabless semiconductor company specializing in timing, memory, interface, and RF solutions before its acquisition by Renesas Electronics in 2019.

The IDT71V416VL15BE8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for industrial and communications systems demanding reliable, low-latency, asynchronous memory with robust thermal performance.

FAQ

What is the operating temperature range for the IDT71V416VL15BE8?

The IDT71V416VL15BE8 is rated for industrial operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including access time (tAA ≤ 15 ns), standby current (ISB ≤ 40 mA), and output drive strength. The "L" suffix in the part number explicitly denotes the industrial temperature grade, distinguishing it from commercial-grade variants.

Does the IDT71V416VL15BE8 require a refresh circuit or clock signal?

No, the IDT71V416VL15BE8 is a fully static RAM and requires neither a refresh circuit nor a clock signal. Its internal design uses static CMOS latches for each memory cell, enabling indefinite data retention as long as power is applied and CS remains asserted. This eliminates timing-critical refresh overhead in microcontroller or FPGA-based systems.

What does the "BE8" suffix indicate in IDT71V416VL15BE8?

The "BE8" suffix in IDT71V416VL15BE8 specifies the packaging configuration: "BE" denotes the 44-pin plastic SOJ (SO44-1) package per JEDEC MO-118, and "8" indicates lead finish - matte tin over nickel, RoHS-compliant, suitable for both wave soldering and Pb-free reflow processes.

Can the IDT71V416VL15BE8 be used with 5 V logic interfaces?

No, the IDT71V416VL15BE8 is strictly a 3.3 V device with absolute maximum input voltage of VDD + 0.5 V (≤ 4.1 V). Its inputs are LVTTL-compatible (VIH ≥ 2.0 V, VIL ≤ 0.8 V), not TTL- or 5 V CMOS-compatible. Direct connection to 5 V logic risks damage and violates the Absolute Maximum Ratings table; level translation is mandatory for mixed-voltage systems.

How does byte enable functionality work on the IDT71V416VL15BE8?

The IDT71V416VL15BE8 uses two dedicated inputs - BHE (pin 37) and BLE (pin 36) - to control byte-level writes. When BHE is low and BLE is high, only I/O8–I/O15 (high byte) are written; when BLE is low and BHE is high, only I/O0–I/O7 (low byte) are written; both low enables full 16-bit word write. This eliminates need for external byte-mask logic in 8-bit peripheral interfacing.

IDT71V416VL15BE8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

IDT71V416VL15BE8 FAQ

1.How can I place an order for IDT71V416VL15BE8 through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VL15BE8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VL15BE8 reliable?

The price and inventory of IDT71V416VL15BE8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VL15BE8 is usually 5 days.

3.What payment methods are accepted for IDT71V416VL15BE8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VL15BE8 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VL15BE8?

IDT71V416VL15BE8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VL15BE8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VL15BE8?

For technical support, including IDT71V416VL15BE8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VL15BE8 requirements.

6.How does Aetrix verify that IDT71V416VL15BE8 is sourced from the original manufacturer or authorized distributors?

All IDT71V416VL15BE8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VL15BE8 meets industry standards.

7.What is the process for return or replacement of IDT71V416VL15BE8?

All IDT71V416VL15BE8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VL15BE8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VL15BE8 part is unused and in its original packaging.

Return procedure for IDT71V416VL15BE8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71V416VL15BE8 Tags

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