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Renesas IDT71V416VL15BEG

Part No.:
IDT71V416VL15BEG
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixIDT71V416VL15BEG.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,776

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Product details

Overview

IDT71V416VL15BEG from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, and LVTTL-compatible bidirectional I/O. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory mapping in embedded controllers and industrial data acquisition systems.

For engineers reviewing the IDT71V416VL15BEG datasheet, IDT71V416VL15BEG pinout, IDT71V416VL15BEG application, or IDT71V416VL15BEG equivalent, this device supports fast asynchronous read/write cycles, low-power standby modes, JEDEC-compliant noise-reduced pinout, and dual-byte write control - critical for real-time buffer memory in FPGA co-processor interfaces and legacy bus-based instrumentation.

Technical Context

The IDT71V416VL15BEG implements fully static asynchronous circuitry with no clocks or refresh required. Its address decoding uses row/column architecture across A0–A17 inputs, supporting 256K-word addressing with 16-bit parallel data paths via I/O0–I/O15.

It employs separate high- and low-byte write enables (BHE/BLE), independent output enable (OE), and chip select (CS) to support partial-word writes and multi-bus timing isolation. All inputs and outputs are LVTTL-compatible with VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.3 V.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16 organization) - supports full 16-bit data bus interfacing without external multiplexing
Access Time (tAA)15 ns max - defines minimum address-to-valid-data delay for synchronous system timing budgeting
Supply Voltage3.0 V to 3.6 V - compatible with standard 3.3 V logic rails and tolerant of ±10% regulation variation
Operating Temperature–40°C to +85°C (Industrial grade) - qualified for use in uncontrolled ambient environments like factory automation PLCs
Standby Current (ISB1)10 mA max - enables low-power sleep states in battery-backed or energy-constrained edge nodes
I/O Capacitance7 pF max (CI/O) - limits signal integrity degradation on high-speed traces up to ~100 MHz bus frequencies
Byte Enable SetuptAS = 0 ns - allows immediate assertion of BHE/BLE relative to address stability, simplifying glue logic design

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1) - surface-mount, gull-wing lead form suitable for reflow assembly and legacy PCB footprints.

Pin/Terminal Circuit Role Design Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K-word decode; A17 is MSB for 4-Mbit addressing
I/O0–I/O7Low-Byte Data I/OBidirectional 8-bit path controlled by BLE; driven to high-Z when BLE = HIGH or CS = HIGH
I/O8–I/O15High-Byte Data I/OBidirectional 8-bit path controlled by BHE; isolated from low byte during partial writes
CSChip SelectActive-low global enable; device enters standby (high-Z I/O, low ISB) when HIGH
OEOutput EnableActive-low control for output drivers only; does not affect write functionality or internal state
WEWrite EnableActive-low signal initiating write cycle; latches data on rising edge when CS and byte enables are active
BLELow-Byte EnableActive-low control enabling I/O0–I/O7 during write or read; decouples low-byte timing from high byte
BHEHigh-Byte EnableActive-low control enabling I/O8–I/O15; permits independent 8-bit accesses in 16-bit systems
VDDPower Supply3.3 V primary supply; must be decoupled locally per JEDEC guidelines to meet noise immunity specs
VSSGroundSignal and power ground reference; JEDEC center-pin placement reduces simultaneous switching noise

Key Features

Feature Design Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise by interleaving VDD/VSS near signal pins - improves signal integrity on dense PCBs
Separate Byte Enables (BHE/BLE)Enables true 8-bit sub-word writes without external logic, reducing bus contention in mixed-width peripheral interfaces
5 ns Output Enable Propagation (tOE)Supports tight timing margins in burst-mode reads where OE is strobed independently of address changes
Full Standby Current ≤ 10 mAPermits low-power retention mode during CPU idle cycles without external power gating circuitry
LVTTL-Compatible I/ODirect interface to 3.3 V microcontrollers, FPGAs, and ASICs without level-shifting components

Applications

Industrial Data Logger FPGA Co-Processor Buffer

Use Scenario: Continuous analog sensor sampling at 10 kSPS with timestamped storage into circular buffer memory before Ethernet upload.

IC Role / Device Role / Timing Role: Asynchronous 16-bit SRAM providing zero-wait-state buffering between ADC controller and packetization engine.

Use Value: 15 ns tAA and tRC enable deterministic write latency under burst sampling; ISB1 ≤ 10 mA extends battery life during offline logging.

Use Scenario: Real-time image preprocessing pipeline where FPGA fabric streams pixel blocks to external memory for histogram calculation and edge detection.

IC Role / Device Role / Timing Role: Off-chip frame buffer with independent byte enables allowing partial line updates without full 16-bit bus arbitration.

Use Value: BHE/BLE control eliminates need for external byte-mask logic; LVTTL compatibility ensures direct connection to Xilinx Spartan I/O banks.

Legacy Bus-Based Instrumentation Telecom Line Card Control Memory

Use Scenario: Retrofit of aging test equipment using ISA or VME bus, requiring drop-in replacement of obsolete 256K×16 SRAMs with identical timing and pinout.

IC Role / Device Role / Timing Role: Drop-in memory component matching JEDEC SOJ-44 footprint and 15 ns speed grade for backward-compatible board reuse.

Use Value: Identical SO44-1 package and pin-for-pin compatibility with prior-generation IDT71V416 variants avoids PCB redesign.

Use Scenario: Embedded control plane memory in carrier-grade DSLAM line cards handling multiple concurrent ADSL2+ sessions with dynamic configuration tables.

IC Role / Device Role / Timing Role: Non-volatile-configurable working memory for real-time session parameter lookup and statistics aggregation.

Use Value: Industrial temperature range (–40°C to +85°C) and 3.3 V operation ensure reliability in sealed, fanless telecom chassis with thermal cycling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
CY62167EV30LL-45ZAXI4-Mbit (256K×16), 45 ns access, 3.3 V, TSOP II package - slower but higher noise margin and wider voltage tolerance (2.2–3.6 V)Suitable for cost-sensitive industrial controls where timing margin >10 ns is acceptableSelect when system clock domain operates below 20 MHz and extended voltage range is needed for brown-out resilience
AS6C4008-55ZIN4-Mbit (256K×16), 55 ns access, 3.3 V, SOJ-44 - lower power (ISB = 3 µA), but significantly slower and non-JEDEC pinoutApplicable in ultra-low-power remote monitoring nodes where memory access is infrequent and timing is non-criticalChoose only if standby current <10 µA is mandatory and 55 ns access satisfies system throughput requirements

Compared with CY62167EV30LL-45ZAXI and AS6C4008-55ZIN, the IDT71V416VL15BEG delivers the fastest access (15 ns), JEDEC-standardized noise-reducing pinout, and industrial-grade thermal qualification - making it optimal for timing-critical, high-reliability embedded memory subsystems.

Availability

IDT71V416VL15BEG is available at Aetrix Electronics and suitable for industrial data loggers, FPGA co-processor buffers, and legacy bus-based instrumentation requiring stable component supply and long-term obsolescence management.

Supply support for IDT71V416VL15BEG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.

The IDT71V416VL15BEG belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for demanding embedded systems requiring fast, reliable, asynchronous memory with industrial temperature support and LVTTL compatibility.

FAQ

What is the operating temperature range for IDT71V416VL15BEG?

IDT71V416VL15BEG is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including access time (tAA ≤ 15 ns), standby current (ISB1 ≤ 10 mA), and input/output voltage thresholds. The device uses IDT's high-reliability CMOS process to maintain timing and leakage performance across this full range.

Does IDT71V416VL15BEG require a refresh circuit or clock signal?

No, IDT71V416VL15BEG is a fully static RAM and requires no refresh circuitry or clock signal. Its internal circuitry is entirely asynchronous and retains data indefinitely as long as VDD is applied and CS remains HIGH or the device is deselected. This eliminates timing overhead and simplifies integration with microcontrollers, FPGAs, and legacy bus architectures that lack dedicated memory controllers.

What package type is used for IDT71V416VL15BEG?

IDT71V416VL15BEG is packaged in a 44-pin, 400-mil plastic SOJ (SO44-1) - a surface-mount gull-wing package with 0.050-inch lead pitch. This matches JEDEC MO-087AB and is pin-compatible with other IDT71V416 speed/package variants. The "BEG" suffix explicitly denotes this SOJ configuration per IDT's ordering nomenclature.

How does the byte enable functionality work on IDT71V416VL15BEG?

IDT71V416VL15BEG provides two independent byte enables: BHE (high-byte enable) controls I/O8–I/O15, and BLE (low-byte enable) controls I/O0–I/O7. During write cycles, asserting only one enable allows 8-bit data to be written to the corresponding byte lane without affecting the other. During reads, both enables must be LOW for full 16-bit output; otherwise, the disabled byte presents high-Z.

Is IDT71V416VL15BEG compatible with 5 V TTL systems?

No, IDT71V416VL15BEG is strictly a 3.3 V LVTTL device and is not 5 V tolerant. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH is specified as ≥ 2.0 V - insufficient for reliable recognition of 5 V TTL logic highs. Interfacing with 5 V systems requires level translation, such as TI SN74AVC4T245 or similar bidirectional translators.

IDT71V416VL15BEG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
15ns
Access Time:
15 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

IDT71V416VL15BEG FAQ

1.How can I place an order for IDT71V416VL15BEG through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VL15BEG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VL15BEG reliable?

The price and inventory of IDT71V416VL15BEG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VL15BEG is usually 5 days.

3.What payment methods are accepted for IDT71V416VL15BEG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VL15BEG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VL15BEG?

IDT71V416VL15BEG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VL15BEG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VL15BEG?

For technical support, including IDT71V416VL15BEG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VL15BEG requirements.

6.How does Aetrix verify that IDT71V416VL15BEG is sourced from the original manufacturer or authorized distributors?

All IDT71V416VL15BEG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VL15BEG meets industry standards.

7.What is the process for return or replacement of IDT71V416VL15BEG?

All IDT71V416VL15BEG units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VL15BEG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VL15BEG part is unused and in its original packaging.

Return procedure for IDT71V416VL15BEG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71V416VL15BEG Tags

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