Renesas IDT71V416VL15BEG8

Overview

IDT71V416VL15BEG8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V CMOS static RAM with 15 ns access time, JEDEC-compliant center power/ground pinout, and LVTTL-compatible bidirectional I/O. It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and operates across industrial temperature range (–40°C to +85°C) in a 44-pin 400-mil TSOP Type II package.

For engineers reviewing the IDT71V416VL15BEG8 datasheet, IDT71V416VL15BEG8 pinout, IDT71V416VL15BEG8 application, or IDT71V416VL15BEG8 equivalent, key selection criteria include its 15 ns read cycle time, low-power standby current (max 50 mA dynamic, 10 mA static), dual-byte enable architecture, and compatibility with 3.3V-only system buses requiring deterministic asynchronous timing.

Technical Context

The IDT71V416VL15BEG8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS process technology optimized for stable operation under industrial thermal stress. Its address decoding, sense amplifiers, and write drivers are co-designed to guarantee tAA ≤ 15 ns and tRC = 15 ns across full VDD (3.0–3.6 V) and temperature range.

Control logic supports three distinct write modes: chip-select–controlled, write-enable–controlled, and byte-enable–controlled, each with defined setup/hold and transition timing (e.g., tAS = 0 ns, tDH = 0 ns). Output enable (OE) enables fast 5 ns output valid timing while maintaining high-impedance isolation during deselection.

Key Specifications

Pinout & Package

Package: 44-pin, 400-mil TSOP Type II (SO44-2), RoHS-compliant, surface-mount plastic package with JEDEC-standard center power/ground pin arrangement (VDD on pins 12 & 33, VSS on pins 11 & 34) to minimize switching noise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed SRAM applications.

Compared with IDT71V416VL15BEG8, CY7C1041DV33-15ZSXI lacks native byte-write capability and requires layout changes, while IS61LV25616AL-15TQLI matches pinout and features but has narrower VDD specification - making IDT71V416VL15BEG8 the only option qualified across full 3.0–3.6 V range with guaranteed 15 ns timing.

Availability

IDT71V416VL15BEG8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging, avionics data logging, and automated test equipment requiring stable component supply, long-term lifecycle support, and guaranteed industrial temperature performance.

Supply support for IDT71V416VL15BEG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

IDT71V416VL15BEG8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory interfacing in industrial and embedded systems where asynchronous operation, wide voltage tolerance, and robust thermal performance are mandatory.

FAQ

What is the maximum operating frequency supported by the IDT71V416VL15BEG8?

The IDT71V416VL15BEG8 is an asynchronous SRAM with no clock input, so it does not have an operating frequency specification. Its performance is defined by timing parameters: tRC = 15 ns minimum cycle time implies a theoretical maximum sustained access rate of 66.7 MHz, but actual throughput depends on system-level bus protocol and controller timing margins. The IDT71V416VL15BEG8 achieves this using fully static circuitry requiring no clocks or refresh cycles.

Does the IDT71V416VL15BEG8 support byte-wide writes without external logic?

Yes, the IDT71V416VL15BEG8 supports true byte-wide writes via dedicated BHE (high-byte enable) and BLE (low-byte enable) inputs. When BHE is low and BLE is high, only I/O8–I/O15 are written; when BLE is low and BHE is high, only I/O0–I/O7 are written. This eliminates the need for external byte-mask gates or data bus gating logic in 8-bit peripheral interfacing - a core design feature confirmed in the functional block diagram and truth table of the IDT71V416VL15BEG8 datasheet.

What is the meaning of the "VL" suffix in IDT71V416VL15BEG8?

In the IDT71V416VL15BEG8 part number, "VL" denotes the low-power speed grade: "V" indicates the die revision (V-step), and "L" specifies low-power operation (vs. "S" for standard power). This is confirmed in the Ordering Information section, where VL corresponds to reduced ICC and ISB values - e.g., ISB1 = 10 mA max versus 20 mA for standard-grade variants - while maintaining identical 15 ns timing specifications.

Can the IDT71V416VL15BEG8 be used in a 2.5V system?

No, the IDT71V416VL15BEG8 is specified exclusively for 3.3V operation, with absolute minimum VDD = 3.0 V and maximum = 3.6 V. Its DC and AC characteristics - including VIH/VIL thresholds, VOL/VOH levels, and timing parameters - are characterized and guaranteed only within that range. Using it at 2.5V violates the Recommended Operating Conditions and risks failure to meet tAA ≤ 15 ns or output drive strength requirements. The IDT71V416VL15BEG8 is not backward-compatible with 2.5V logic families.

Is the IDT71V416VL15BEG8 pin-compatible with the IDT71V416VS15BEG8?

Yes, the IDT71V416VL15BEG8 and IDT71V416VS15BEG8 share identical pinout, package (44-pin TSOP II), and functional interface - differing only in power consumption: "VL" is low-power, "VS" is standard-power. Both specify the same 15 ns speed grade, industrial temperature range, and electrical interface. The IDT71V416VL15BEG8 replaces IDT71V416VS15BEG8 in applications where reduced standby current (ISB1 = 10 mA vs. 20 mA) is critical, with no PCB or firmware changes required.