Renesas IDT71V416VL15PH

Overview

IDT71V416VL15PH from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 15 ns access time, single 3.3 V supply operation, and LVTTL-compatible bidirectional I/O. It features separate byte enable (BHE/BLE), output enable (OE), and chip select (CS) for flexible memory mapping in embedded controllers and industrial data acquisition systems.

For engineers reviewing the IDT71V416VL15PH datasheet, IDT71V416VL15PH pinout, IDT71V416VL15PH application, or IDT71V416VL15PH equivalent, key selection criteria include its 15 ns read cycle time, SOJ-44 package with JEDEC-compliant power/ground pinout, low-power standby current (10 mA max), and support for independent high/low byte writes in real-time control subsystems.

Technical Context

The IDT71V416VL15PH implements fully static asynchronous circuitry-no clocks or refresh required-and uses IDT's high-reliability CMOS process to achieve stable operation across –40°C to +85°C industrial temperature range. Its dual-byte enable architecture enables partial-word writes without external logic.

Timing is controlled via three independent enable paths: CS-driven, OE-driven, and BHE/BLE-driven write cycles, each with defined setup/hold and transition-to-valid delays (e.g., tCLZ = 4 ns, tOE = 7 ns). All inputs and outputs meet LVTTL voltage thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) at 3.3 V supply.

Key Specifications

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center-power/ground pinout for noise reduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar SRAM applications.

Compared with CY62157EV30LL-15ZSXI and AS6C4008-15TIN, the IDT71V416VL15PH offers tighter 3.3 V supply regulation, integrated byte enables eliminating glue logic, and lowest industrial-grade standby current-critical for thermally constrained, long-life embedded deployments.

Availability

IDT71V416VL15PH is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging subsystems, ruggedized communications modules, and DSP-accelerated edge analytics requiring stable component supply over extended product lifecycles.

Supply support for IDT71V416VL15PH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications, computing, and industrial markets.

The IDT71V416VL15PH belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for deterministic, low-latency memory expansion in industrial control, test equipment, and real-time signal processing systems.

FAQ

What is the operating temperature range for the IDT71V416VL15PH?

The IDT71V416VL15PH is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed across all AC and DC parameters in the datasheet, including access time (tAA ≤ 15 ns), standby current (ISB1 ≤ 10 mA), and input/output voltage thresholds. The device uses IDT's qualified industrial-process CMOS technology to maintain timing and leakage stability across this full range.

Does the IDT71V416VL15PH require a refresh circuit or clock signal?

No, the IDT71V416VL15PH does not require any refresh circuit or clock signal. It is a fully static asynchronous SRAM: data retention and access are controlled solely by address, CS, OE, WE, and byte enable signals. Its internal design uses six-transistor memory cells and static latches, eliminating dynamic refresh overhead and simplifying system timing design for microcontrollers and FPGAs.

What package type is used for the IDT71V416VL15PH?

The IDT71V416VL15PH uses a 44-pin, 400-mil plastic SOJ (Small Outline J-lead) package, designated SO44-1 in IDT documentation. This package features JEDEC-standard center power (Pin 12) and ground (Pin 13) pins, plus mirrored VDD/VSS pairs (Pins 33/34) to reduce simultaneous switching noise during high-speed operation.

Can the IDT71V416VL15PH perform byte-wide writes without affecting adjacent data?

Yes, the IDT71V416VL15PH supports independent high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) writes using dedicated BHE and BLE pins. When only one byte enable is asserted low during a write cycle with WE low, only that 8-bit lane is updated; the other byte retains its prior value. This functionality is verified in the truth table and timing waveforms for Write Cycle No. 2 and No. 3.

What is the maximum output drive capability of the IDT71V416VL15PH I/O pins?

The IDT71V416VL15PH I/O pins provide LVTTL-compatible output drive: minimum VOH = 2.4 V at IOH = –4 mA and maximum VOL = 0.4 V at IOL = 8 mA, tested under VDD = 3.0 V minimum. This allows direct interfacing with standard 3.3 V logic families (e.g., 74LVC, XC9500XL) without external buffers, supporting fan-out to up to 10–12 loads depending on trace capacitance.