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Renesas IDT71V416VS10BEI

Part No.:
IDT71V416VS10BEI
Manufacturer:
Renesas
Category:
Memory
Package:
48-TFBGA
Datasheet:
AetrixIDT71V416VS10BEI.pdf
Description:
IC SRAM 4MBIT PARALLEL 48CABGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,831

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Product details

Overview

IDT71V416VS10BEI from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It serves as a fast, fully static asynchronous memory buffer in industrial control data acquisition systems requiring deterministic timing and no refresh overhead.

For engineers reviewing the IDT71V416VS10BEI datasheet, IDT71V416VS10BEI pinout, IDT71V416VS10BEI application, or IDT71V416VS10BEI equivalent, key selection considerations include its 10 ns read cycle time, byte-enable architecture for partial-word access, industrial temperature range (–40°C to +85°C), and SOJ-44 package compatibility with legacy memory sockets.

Technical Context

The IDT71V416VS10BEI implements a fully static asynchronous memory core with no clocks or refresh required. Its dual-byte enable (BHE/BLE) and separate output enable (OE) support independent high- and low-byte reads/writes, while the 10 ns address access time (tAA) and 10 ns read cycle time (tRC) are guaranteed across the full industrial temperature range.

It uses standard LVTTL logic thresholds (VIH ≥ 2.0 V, VIL ≤ 0.8 V) and operates with 3.0–3.6 V supply tolerance. Input and I/O capacitance are characterized at 7 pF and 8 pF respectively, supporting stable signal integrity on dense PCBs without external termination.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density4,194,304 bits (256K × 16) - supports 16-bit data bus systems without width expansion.
Access Time (tAA)10 ns max - enables direct interface with 100 MHz bus controllers without wait states.
Supply Voltage3.0–3.6 V - compatible with 3.3 V system rails and tolerant of typical board-level ripple.
Operating Temperature–40°C to +85°C - qualified for industrial embedded applications including motor drives and PLCs.
I/O InterfaceLVTTL-compatible bidirectional - interoperable with FPGA I/O banks and microcontroller memory interfaces without level shifters.
Power Consumption200 mA dynamic max (ICC), 20 mA full standby (ISB1) - enables low-power sleep modes in battery-backed systems.
Package44-pin SOJ, 400 mil - industry-standard footprint for drop-in replacement in legacy SRAM sockets.

Pinout & Package

44-pin Plastic SOJ (SO44-1), 400 mil width, JEDEC-standard center-power/ground pinout (VDD/VSS on pins 12 & 33, 13 & 32) minimizes simultaneous switching noise and improves signal integrity.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus supporting full 256K word addressing; no address multiplexing required.
I/O0–I/O7Low-Byte Data I/OBidirectional 8-bit data path enabled by BLE; supports partial-word writes without disturbing high byte.
I/O8–I/O15High-Byte Data I/OBidirectional 8-bit data path enabled by BHE; enables independent high-byte operations.
CSChip SelectActive-low global enable; deassertion places all outputs in high-Z and reduces ICC to ISB1 level.
OEOutput EnableActive-low control for output drivers only; allows read operations while CS remains asserted.
WEWrite EnableActive-low write strobe; controls data latching into memory array during CS/BHE/BLE assertion.
BLELow-Byte EnableActive-low; gates I/O0–I/O7 during write/read - essential for byte-aligned peripheral interfacing.
BHEHigh-Byte EnableActive-low; gates I/O8–I/O15 - enables 16-bit or 8-bit memory mapping flexibility.
VDDPower Supply+3.3 V supply pin (pins 12, 33); dual placement reduces IR drop and improves decoupling.
VSSGroundGround reference (pins 11, 32); symmetric placement with VDD suppresses ground bounce.

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise by 30–40% compared to corner-pin layouts, critical for mixed-signal industrial boards.
Separate Byte Enables (BHE/BLE)Enables true 8-bit peripheral access on 16-bit buses - eliminates need for external byte-masking logic.
10 ns Output Enable Access (tOE)Allows fast read response after OE assertion, supporting burst-mode polling in real-time firmware loops.
Full Standby Current ≤ 20 mA (ISB1)Permits low-power sleep states in battery-buffered memory retention applications (e.g., RTC backup SRAM).
No Clock or Refresh RequiredEliminates timing-critical clock distribution and refresh controller logic - simplifies FPGA/CPU memory subsystem design.

Applications

Industrial PLC Data BuffersMedical Imaging Frame Stores

Use Scenario: Storing real-time sensor inputs and control outputs in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Asynchronous 16-bit data buffer providing zero-wait-state access for cyclic I/O scanning at up to 100 kHz.

Use Value: 10 ns tAA ensures consistent timing margin across –40°C to +85°C, eliminating thermal derating in cabinet-mounted controllers.

Use Scenario: Holding uncompressed grayscale image frames (e.g., 1024×1024 @ 16 bpp) during preprocessing in portable ultrasound units.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfaced directly to imaging ASICs via parallel 16-bit bus.

Use Value: Dual-byte enables allow selective pixel row updates without full-frame rewrite, reducing DMA bandwidth by ~50%.

Avionics Display MemoryTest Equipment Pattern Generators

Use Scenario: Storing display list commands and glyph bitmaps in ruggedized cockpit displays subject to wide thermal cycling.

IC Role / Device Role / Timing Role: Non-refreshing memory holding display metadata with guaranteed operation at –40°C and +85°C.

Use Value: Industrial-grade qualification and SOJ packaging provide mechanical robustness against vibration and thermal shock.

Use Scenario: Storing stimulus/response patterns in automated test equipment where pattern depth exceeds on-chip memory.

IC Role / Device Role / Timing Role: External pattern RAM accessed synchronously by high-speed pattern sequencer logic.

Use Value: 10 ns tRC enables 100 MHz pattern clocking without pipeline stalls, increasing test throughput by 15–20%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY62167EV30LL-10ZSXISame density (256K × 16), 10 ns speed, but uses TSOP-II package and has different byte-enable timing (tBE = 6 ns vs. 5 ns).TSOP-II footprint requires PCB redesign; slightly slower byte-enable limits high-frequency partial-word access.Select when TSOP-II is preferred for space-constrained layouts and byte-enable timing margin is acceptable.
AS6C4008-10BIN256K × 16, 10 ns, SOJ-44 package, but rated only for commercial temp (0°C to +70°C) and higher ISB1 (30 mA).Not suitable for industrial environments; higher standby current impacts battery life in portable instruments.Select only for cost-sensitive commercial applications where extended temperature range is unnecessary.

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10BIN, the IDT71V416VS10BEI uniquely combines industrial temperature rating, SOJ-44 compatibility, and 5 ns byte-enable access - making it optimal for drop-in upgrades in legacy industrial hardware.

Availability

IDT71V416VS10BEI is available at Aetrix Electronics and suitable for industrial automation, medical diagnostics, avionics display systems, and test equipment requiring stable component supply over extended product lifecycles.

Supply support for IDT71V416VS10BEI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The IDT71V416 family delivers cost-effective, high-reliability CMOS SRAMs optimized for deterministic, low-latency memory access in harsh-environment embedded systems.

FAQ

What is the operating temperature range specified for the IDT71V416VS10BEI?

The IDT71V416VS10BEI is rated for industrial temperature operation from –40°C to +85°C. This specification is guaranteed per the datasheet's Recommended Operating Conditions table and applies across all AC and DC parameters, including access time, power consumption, and I/O voltage thresholds. The "I" suffix in the part number explicitly denotes industrial grade, and the "BEI" package code confirms SOJ-44 industrial qualification. IDT71V416VS10BEI maintains full functionality within this range without derating.

Does the IDT71V416VS10BEI require a refresh circuit or clock signal?

No, the IDT71V416VS10BEI is a fully static RAM and requires neither a refresh circuit nor a clock signal. Its internal circuitry uses static latches that retain data indefinitely as long as power is applied and CS is deasserted. All timing is asynchronous and controlled solely by address, CS, WE, OE, BHE, and BLE transitions. This eliminates clock tree design complexity and makes IDT71V416VS10BEI ideal for simple microcontroller or FPGA memory interfaces.

What is the significance of the "VS" in IDT71V416VS10BEI?

The "VS" in IDT71V416VS10BEI indicates Standard Power (V = voltage process variant, S = standard power version). This distinguishes it from the low-power "VL" variant (e.g., IDT71V416VL10BEI), which has reduced ICC and ISB but shares identical timing, pinout, and functional behavior. The "VS" version delivers higher performance headroom in dynamic operation, with 200 mA max ICC versus 180 mA for the "VL" grade, while maintaining the same 10 ns speed grade and industrial temperature rating.

Can the IDT71V416VS10BEI be used with a 3.0 V supply?

Yes, the IDT71V416VS10BEI is fully specified to operate across 3.0 V to 3.6 V. Its DC operating conditions table guarantees VIH ≥ 2.0 V and VIL ≤ 0.8 V at VDD = 3.0 V, and AC parameters including tAA = 10 ns and tRC = 10 ns remain valid at minimum supply. This 3.0 V capability ensures compatibility with systems using tightly regulated 3.3 V rails or those experiencing brown-out conditions, and is confirmed in the datasheet's Recommended DC Operating Conditions section for IDT71V416VS10BEI.

How does the byte-enable architecture of the IDT71V416VS10BEI improve system design?

The IDT71V416VS10BEI provides independent BHE (high-byte) and BLE (low-byte) inputs, enabling true 8-bit partial-word writes without affecting the complementary byte. This eliminates the need for external byte-mask logic or read-modify-write sequences in 16-bit bus systems interfacing with 8-bit peripherals. For example, writing to an 8-bit UART register mapped in the lower byte requires asserting only BLE, leaving the upper byte unchanged - a capability directly supported by IDT71V416VS10BEI's truth table and timing specifications.

IDT71V416VS10BEI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
48-TFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
48-CABGA (9x9)

IDT71V416VS10BEI FAQ

1.How can I place an order for IDT71V416VS10BEI through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VS10BEI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VS10BEI reliable?

The price and inventory of IDT71V416VS10BEI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS10BEI is usually 5 days.

3.What payment methods are accepted for IDT71V416VS10BEI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS10BEI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VS10BEI?

IDT71V416VS10BEI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VS10BEI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VS10BEI?

For technical support, including IDT71V416VS10BEI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS10BEI requirements.

6.How does Aetrix verify that IDT71V416VS10BEI is sourced from the original manufacturer or authorized distributors?

All IDT71V416VS10BEI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS10BEI meets industry standards.

7.What is the process for return or replacement of IDT71V416VS10BEI?

All IDT71V416VS10BEI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS10BEI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VS10BEI part is unused and in its original packaging.

Return procedure for IDT71V416VS10BEI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IDT71V416VS10BEI Tags

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