Renesas IDT71V416VS10BEI8

Overview

IDT71V416VS10BEI8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V single-supply CMOS static RAM with 10 ns access time, JEDEC-compliant center-power/ground pinout, and industrial temperature range (–40°C to +85°C). It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and operates in SOJ-44 package for embedded memory buffering in real-time control systems.

For engineers reviewing the IDT71V416VS10BEI8 datasheet, IDT71V416VS10BEI8 pinout, IDT71V416VS10BEI8 application, or IDT71V416VS10BEI8 equivalent, key selection criteria include its 10 ns read cycle time, LVTTL-compatible I/Os, low-power standby current (≤70 mA dynamic, ≤20 mA static), and dual-byte enable architecture for flexible data bus interfacing in FPGA co-processor memory subsystems.

Technical Context

The IDT71V416VS10BEI8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS fabrication optimized for deterministic timing across industrial temperature extremes. Its address decoding, sense amplifiers, and bidirectional write drivers are integrated into a single die with separate high- and low-byte output buffers.

Timing is governed by three independent control paths: chip-select–driven (tACS), output-enable–driven (tOE), and byte-enable–driven (tBE), each with guaranteed 5 ns low-to-valid or high-to-high-Z transitions. The device supports simultaneous CS/OE/WE assertion for overlapping read/write arbitration in burst-access memory controllers.

Key Specifications

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard footprint with center VDD/VSS pins for noise reduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed asynchronous SRAM applications.

Compared with CY62167EV30LL-10ZSXI and AS6C4008-10BIN, the IDT71V416VS10BEI8 provides native active-low BHE/BLE with guaranteed 5 ns tBE, enabling direct interface to legacy 16-bit microcontrollers like Motorola 68K derivatives without glue logic or timing revalidation.

Availability

IDT71V416VS10BEI8 is available at Aetrix Electronics and suitable for industrial automation, medical imaging subsystems, and digital power converter designs requiring stable component supply and long-term obsolescence management.

Supply support for IDT71V416VS10BEI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The IDT71V416VS10BEI8 belongs to IDT's 3.3V high-speed SRAM product line, engineered for deterministic low-latency memory access in real-time embedded systems where refresh-free operation and industrial temperature resilience are mandatory.

FAQ

What is the maximum operating frequency supported by the IDT71V416VS10BEI8?

The IDT71V416VS10BEI8 is an asynchronous SRAM with no clock input, so it does not have an operating frequency specification. Instead, its performance is defined by timing parameters such as tRC (10 ns read cycle time) and tWC (10 ns write cycle time), which support reliable interfacing with 100 MHz bus systems when combined with appropriate setup/hold margins. The IDT71V416VS10BEI8 achieves this using fully static CMOS circuitry that requires no refresh or clocking.

Does the IDT71V416VS10BEI8 require external pull-up resistors on its control pins?

No, the IDT71V416VS10BEI8 does not require external pull-up resistors on CS, OE, WE, BHE, or BLE. All control inputs are TTL-compatible with defined VIH (≥2.0 V) and VIL (≤0.8 V) thresholds, and internal biasing ensures valid logic levels under normal operating conditions. External pull-ups are unnecessary unless system-level noise immunity requirements exceed the device's inherent noise margin, which is typical for industrial environments where the IDT71V416VS10BEI8 is deployed.

Can the IDT71V416VS10BEI8 be used in place of the IDT71V416VS12BEI8?

Yes, the IDT71V416VS10BEI8 can replace the IDT71V416VS12BEI8 in most designs because both share identical pinout, voltage specifications, and functional behavior-the only difference is speed grade: the "10" suffix denotes 10 ns access time versus 12 ns for the "12" version. The IDT71V416VS10BEI8 meets or exceeds all timing specs of the slower variant, making it a backward-compatible upgrade with improved timing margin, provided board layout and signal integrity support the faster edge rates.

What is the purpose of Pin 28 (NC*) on the IDT71V416VS10BEI8 SOJ package?

Pin 28 on the IDT71V416VS10BEI8 SOJ package is designated NC* (No Connect, optional ground), meaning it is not internally connected to any circuitry and may be left floating or tied to VSS for mechanical stability or EMI reduction. The datasheet explicitly states "Pin 28 can either be a NC or connected to Vss", confirming that grounding it introduces no electrical risk and may improve thermal dissipation or board-level noise immunity in high-density industrial PCBs using the IDT71V416VS10BEI8.

How does the IDT71V416VS10BEI8 handle simultaneous read and write operations?

The IDT71V416VS10BEI8 does not support true simultaneous read and write; it is a single-port SRAM. However, its architecture allows rapid interleaving via independent control of CS, OE, WE, BHE, and BLE. For example, while one byte is being written (via asserted BLE and WE), the other byte remains readable if OE is active and BHE is asserted-provided address and control timing constraints (e.g., tAW, tDW) are met. This pseudo-concurrent behavior is leveraged in IDT71V416VS10BEI8-based memory controllers for protocol bridging where byte-granular access patterns dominate.