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Renesas IDT71V416VS10PH8
- Part No.:
- IDT71V416VS10PH8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
IDT71V416VS10PH8.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,434
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Product details
Overview
IDT71V416VS10PH8 from Integrated Device Technology is a 4-Mbit (256K × 16) high-speed CMOS static RAM with 10 ns access time, single 3.3 V supply operation, LVTTL-compatible I/O, and JEDEC-standard center-power/ground pinout for noise reduction. It supports byte-wide and word-wide read/write operations in industrial temperature range (–40°C to +85°C) and is used in real-time data buffering for network packet processors and FPGA-based control systems.
For engineers reviewing the IDT71V416VS10PH8 datasheet, IDT71V416VS10PH8 pinout, IDT71V416VS10PH8 application, or IDT71V416VS10PH8 equivalent, key selection criteria include 10 ns read cycle time, dual byte enable (BHE/BLE), SOJ-44 package compatibility, and industrial-grade reliability without refresh circuitry.
Technical Context
The IDT71V416VS10PH8 implements fully static asynchronous memory architecture with no clocks or refresh required. Its address decoding supports 18-bit addressing (A0–A17), enabling direct mapping of 256K words across 16-bit data bus width.
It features independent high-byte (I/O8–I/O15) and low-byte (I/O0–I/O7) control via BHE and BLE inputs, allowing selective 8-bit writes without affecting adjacent bytes. Output enable (OE) provides 5 ns output valid timing, and chip select (CS) enables fast bank switching in multi-SRAM systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16) - supports full 16-bit data path without external multiplexing |
| Access Time (tAA) | 10 ns max - enables interface with 100 MHz bus controllers without wait states |
| Supply Voltage | 3.0 V to 3.6 V - compatible with standard 3.3 V logic rails and LVTTL I/O thresholds |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded control and telecom infrastructure |
| Input Capacitance | 7 pF max - ensures signal integrity on high-speed PCB traces up to 150 MHz |
| Dynamic Current (ICC) | 200 mA max at fMAX - defines thermal budget for dense memory arrays in compact enclosures |
| Standby Current (ISB1) | 20 mA max - enables low-power retention mode during processor sleep cycles |
Pinout & Package
Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-compliant center-power/ground layout for EMI suppression.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit address bus supporting full 256K word addressing; A17 enables 512 KB address space boundary |
| I/O0–I/O7 | Low-Byte Data I/O | Bidirectional 8-bit data path controlled by BLE; isolated from high byte during partial writes |
| I/O8–I/O15 | High-Byte Data I/O | Bidirectional 8-bit data path controlled by BHE; enables independent upper/lower byte manipulation |
| CS | Chip Select | Active-low global enable; deassertion places all outputs in high-Z to prevent bus contention |
| OE | Output Enable | Active-low control for output drivers; allows read data gating without disabling chip select |
| WE | Write Enable | Active-low write strobe; initiates write cycle when CS and byte enables are active |
| BHE, BLE | Byte Enable Controls | Independent active-low enables for high and low data bytes; support 8-bit microprocessor interfacing |
| VDD, VSS | Power/Ground | Center-placed pins (Pins 12 & 33) reduce simultaneous switching noise per JEDEC standard |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces ground bounce and supply noise in high-speed parallel bus systems by minimizing current loop area |
| Separate High/Low Byte Enables | Enables 8-bit peripheral interfacing on 16-bit buses without glue logic or data masking overhead |
| 5 ns OE-to-Valid Output Delay | Supports tight timing margins in pipelined read operations with minimal latency penalty |
| No Clock or Refresh Required | Eliminates need for external timing generators or refresh controllers-reduces system complexity and power |
| Single 3.3 V Supply Operation | Direct compatibility with modern FPGA I/O banks and ASIC core voltages, avoiding level-shifting components |
Applications
| Industrial PLC Data Buffering | FPGA-Based Protocol Acceleration |
|---|---|
Use Scenario: Real-time collection and staging of sensor data streams in programmable logic controller backplanes. IC Role / Device Role / Timing Role: Asynchronous SRAM buffer between fieldbus interface ASIC and ARM Cortex-M7 CPU, absorbing bursty I/O traffic. Use Value: 10 ns access time eliminates wait states during 100 MHz bus arbitration; industrial temp rating ensures uptime in uncooled cabinets. | Use Scenario: Temporary storage of packet headers and metadata during line-rate Ethernet frame processing. IC Role / Device Role / Timing Role: Dual-port accessible memory block for FPGA fabric, serving as descriptor cache for DMA engines. Use Value: Independent BHE/BLE enables concurrent header (high byte) and payload offset (low byte) updates without read-modify-write cycles. |
| Telecom Line Card Control Memory | Medical Imaging Frame Buffering |
Use Scenario: Storing configuration registers and status flags for redundant T1/E1 framer ICs in carrier-grade line cards. IC Role / Device Role / Timing Role: Non-volatile shadow memory holding boot-time initialization parameters and runtime fault logs. Use Value: Full standby current ≤20 mA extends hold-up time during brief AC brownouts; SOJ package withstands reflow and vibration stress. | Use Scenario: Intermediate storage of compressed DICOM image tiles during reconstruction pipeline in portable ultrasound units. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for GPU-accelerated interpolation kernels operating on 16-bit pixel data. Use Value: LVTTL compatibility ensures clean signal edges at 50 MHz pixel clock rates; 3.3 V operation matches imaging SoC I/O voltage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXI | 10 ns access, 256K × 16, 3.3 V, but uses TSOP-II package (not SOJ); higher ISB1 (30 mA vs. 20 mA) | Suitable for new designs where board space favors TSOP; less optimal for legacy SOJ footprints | Select if footprint flexibility exists and lower standby current is non-critical |
| AS6C4008-10TIN | 10 ns access, same density and voltage, but commercial temp only (0°C to +70°C); no industrial grade qualification | Acceptable for indoor medical or office equipment; not rated for extended ambient or thermal cycling | Select only for cost-sensitive commercial applications with controlled environments |
Compared with IDT71V416VS10PH8, CY62167EV30LL-10ZSXI offers identical speed and density but requires PCB redesign for TSOP-II, while AS6C4008-10TIN sacrifices industrial temperature support for lower unit cost-making IDT71V416VS10PH8 the sole choice for ruggedized, drop-in SOJ-44 deployments.
Availability
IDT71V416VS10PH8 is available at Aetrix Electronics and suitable for industrial PLC data buffering, FPGA-based protocol acceleration, and telecom line card control requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71V416VS10PH8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs for communications and computing infrastructure.
IDT71V416VS10PH8 belongs to IDT's legacy high-speed CMOS SRAM product line, designed specifically for industrial and telecom applications demanding deterministic timing, low-noise operation, and robust JEDEC-compliant packaging.
FAQ
What is the maximum operating frequency supported by the IDT71V416VS10PH8?
The IDT71V416VS10PH8 does not operate on a clock signal-it is an asynchronous SRAM. Its performance is defined by timing parameters: tRC (read cycle time) is 10 ns max, implying effective throughput up to 100 MHz in continuous sequential access. Actual system frequency depends on bus controller timing margins and address setup/hold requirements, not an internal clock.
Does the IDT71V416VS10PH8 require refresh circuitry or periodic memory maintenance?
No, the IDT71V416VS10PH8 is a fully static RAM and requires no refresh cycles, clocks, or periodic maintenance. Its CMOS latch-based memory cells retain data indefinitely as long as VDD remains within specification (3.0 V to 3.6 V) and ambient temperature stays within –40°C to +85°C. This eliminates refresh overhead in microcontroller or FPGA-based systems.
Can the IDT71V416VS10PH8 be used with 5 V logic interfaces?
No, the IDT71V416VS10PH8 is strictly a 3.3 V device. Its absolute maximum input voltage is VDD + 0.5 V (≤4.1 V), and VIH minimum is 2.0 V-making it incompatible with standard 5 V TTL or CMOS logic levels. Direct connection to 5 V systems risks damage or unreliable operation; level translation is mandatory for mixed-voltage designs.
What is the function of Pin 28 on the IDT71V416VS10PH8 SOJ package?
Pin 28 on the IDT71V416VS10PH8 SOJ package is designated NC* (No Connect), meaning it has no internal connection and must be left unconnected. The datasheet explicitly states "Pin 28 can either be a NC or connected to Vss", but IDT recommends leaving it floating unless system-level noise analysis dictates grounding for shielding-no functional impact results from either choice.
How does the byte enable functionality work on the IDT71V416VS10PH8?
The IDT71V416VS10PH8 uses two independent active-low controls: BHE (high-byte enable) for I/O8–I/O15 and BLE (low-byte enable) for I/O0–I/O7. During a write cycle, asserting only BLE writes to the lower byte while preserving high-byte contents; asserting only BHE writes to the upper byte. Both must be low for full 16-bit word writes-enabling precise 8-bit updates without read-modify-write sequences.
IDT71V416VS10PH8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
IDT71V416VS10PH8 FAQ
1.How can I place an order for IDT71V416VS10PH8 through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416VS10PH8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416VS10PH8 reliable?
The price and inventory of IDT71V416VS10PH8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS10PH8 is usually 5 days.
3.What payment methods are accepted for IDT71V416VS10PH8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS10PH8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IDT71V416VS10PH8?
IDT71V416VS10PH8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416VS10PH8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416VS10PH8?
For technical support, including IDT71V416VS10PH8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS10PH8 requirements.
6.How does Aetrix verify that IDT71V416VS10PH8 is sourced from the original manufacturer or authorized distributors?
All IDT71V416VS10PH8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS10PH8 meets industry standards.
7.What is the process for return or replacement of IDT71V416VS10PH8?
All IDT71V416VS10PH8 units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS10PH8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416VS10PH8 part is unused and in its original packaging.
Return procedure for IDT71V416VS10PH8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416VS10PH8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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