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Renesas IDT71V416VS10PHI
- Part No.:
- IDT71V416VS10PHI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 44-TSOP (0.400", 10.16mm Width)
- Datasheet:
-
IDT71V416VS10PHI.pdf
- Description:
- IC SRAM 4MBIT PARALLEL 44TSOP II
- Quantity:
- Payment:
- Shipping:
Inventory:4,517
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Product details
Overview
IDT71V416VS from Integrated Device Technology is a 4,194,304-bit (256K × 16) high-speed CMOS static RAM operating from a single 3.3V supply, with 10ns access time, JEDEC-compliant center power/ground pinout, and LVTTL-compatible bidirectional I/Os. It serves as a non-refreshing, fully static memory buffer in embedded controllers, network packet buffers, and industrial PLC data stacks.
For engineers reviewing the IDT71V416VS datasheet, IDT71V416VS pinout, IDT71V416VS application, or IDT71V416VS equivalent, key selection criteria include byte-enable-controlled 16-bit word access, industrial temperature support (–40°C to +85°C), SOJ/TSOP/BGA package options, and low-impedance output timing (tOLZ = 0ns, tOHZ = 5ns).
Technical Context
The IDT71V416VS implements fully static asynchronous architecture-no clocks or refresh required-with independent high-byte (BHE) and low-byte (BLE) enable control for partial-word writes. Its address decoding supports A0–A17 (18-bit addressing), and all control inputs (CS, OE, WE, BHE, BLE) are LVTTL-compatible with VIH ≥ 2.0V and VIL ≤ 0.8V at VDD = 3.3V.
It features dual standby modes: dynamic standby (ISB ≤ 70mA @ fMAX) and full static standby (ISB1 ≤ 20mA), both enabled via CS high. Output drivers meet VOH ≥ 2.4V (IOH = –4mA) and VOL ≤ 0.4V (IOL = 8mA), ensuring robust interfacing with 3.3V logic families.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 4,194,304 bits (256K × 16 organization) |
| Access Time (tAA) | 10 ns - determines minimum read latency from address valid to data valid |
| Supply Voltage | 3.0–3.6 V - compatible with standard 3.3V system rails without regulation overhead |
| Operating Temperature | –40°C to +85°C - qualified for industrial-grade embedded systems |
| I/O Interface | LVTTL-compatible - direct connection to FPGA/CPLD/ASIC I/O banks without level shifters |
| Byte Enable Control | Separate BHE/BLE pins - enables 8-bit sub-word writes without disturbing adjacent bytes |
| Output Disable Time (tOHZ) | 5 ns - ensures fast bus release for multi-device shared-data-bus architectures |
Pinout & Package
Available in 44-pin, 400-mil plastic SOJ (SO44-1) and 44-pin TSOP Type II (SO44-2) packages. Pin 28 is NC or VSS; JEDEC-compliant center-power/ground layout reduces simultaneous switching noise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit row/column select for full 256K-word addressing |
| CS | Chip Select | Active-low global enable; deassertion places outputs in high-Z and reduces ICC to ISB |
| OE | Output Enable | Active-low control for output drivers; tOE = 5ns enables tight read timing windows |
| WE | Write Enable | Active-low write strobe; controls direction of I/O0–I/O15 during write cycles |
| BHE/BLE | Byte Enable | Independent high/low byte gating-enables 8-bit writes without read-modify-write overhead |
| I/O0–I/O15 | Bidirectional Data | 16-bit LVTTL I/O bus; internally terminated for impedance matching in SOJ/TSOP layouts |
| VDD/VSS | Power/Ground | Center-placed VDD (pins 12, 33) and VSS (pins 11, 34) minimize ground bounce |
Key Features
| Feature | Design Value |
|---|---|
| JEDEC Center Power/Ground Pinout | Reduces simultaneous switching noise by symmetric current return path distribution |
| Zero Hold Time (tAS = 0 ns) | Eliminates external address latch timing constraints in burst-access systems |
| Full Static Operation | No clock, no refresh, no dynamic power penalty-ideal for deterministic real-time firmware stacks |
| Low-Z Output Enable (tOLZ = 0 ns) | Enables immediate data assertion on bus after OE assertion-critical for pipelined read sequences |
| Industrial Temperature Range Support | Validated operation from –40°C to +85°C-suitable for uncooled industrial control cabinets |
Applications
| Industrial PLC Data Buffer | Network Packet Memory |
|---|---|
Use Scenario: Storing real-time I/O scan data and ladder logic state variables in programmable logic controllers. IC Role / Device Role / Timing Role: Non-volatile-equivalent scratchpad memory holding 256K words of process image data with deterministic 10ns read access. Use Value: Eliminates need for external refresh circuitry while meeting <100ns cycle time requirements of high-speed motion control loops. | Use Scenario: Temporary storage of Ethernet frame payloads in Layer 2 switches before forwarding or filtering. IC Role / Device Role / Timing Role: Asynchronous 16-bit-wide FIFO buffer supporting line-rate packet buffering at 100 Mbps+ speeds. Use Value: Byte-enable capability allows partial-frame updates without full-word overwrites, reducing bus contention in multi-port switch fabrics. |
| FPGA Configuration Cache | DSP Algorithm Scratchpad |
Use Scenario: Holding configuration bitstreams or runtime parameter tables for Xilinx/Altera FPGAs in reconfigurable systems. IC Role / Device Role / Timing Role: Fast-access external memory mapped into FPGA's local address space for boot-time or dynamic reconfiguration. Use Value: 3.3V LVTTL compatibility enables direct connection to FPGA I/O banks; 10ns access avoids pipeline stalls during bitstream loading. | Use Scenario: Providing low-latency working memory for TI C6000 or Analog Devices SHARC DSPs executing FFT or FIR filter kernels. IC Role / Device Role / Timing Role: Dual-port-capable (via time-multiplexed CS/OE/WE control) scratchpad supporting parallel instruction and data fetches. Use Value: Zero address setup/hold times simplify timing closure in high-MHz DSP buses; industrial temp rating supports ruggedized audio processing hardware. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-speed static RAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY62167EV30LL-10ZSXI | 16M-bit (1M × 16), 10ns access, 3.3V, but uses different byte-enable polarity (active-high BHE/BLE) | Requires PCB-level logic inversion for BHE/BLE signals; otherwise identical timing and interface behavior | Select when higher density (1M × 16) is needed and board layout allows signal inversion. |
| AS6C4008-10TIN | 4M-bit (256K × 16), 10ns, 3.3V, but lacks separate BHE/BLE-uses single UB/LB pins with different timing specs (tBE = 8ns vs. 5ns) | Cannot perform true independent byte writes; requires software workarounds for partial-word updates | Choose only if byte-enable independence is not required and cost is primary constraint. |
Compared with CY62167EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V416VS provides guaranteed 5ns byte-enable access and native active-low BHE/BLE polarity-reducing gate count and timing margin risk in industrial control designs requiring strict partial-word write integrity.
Availability
IDT71V416VS is available at Aetrix Electronics and suitable for industrial PLC data buffers, network packet memory, FPGA configuration cache, and DSP algorithm scratchpad applications requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IDT71V416VS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Integrated Device Technology (IDT), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory, interface, and RF solutions for communications, computing, and industrial markets.
The IDT71V416VS belongs to IDT's legacy 3.3V high-speed SRAM product line, designed specifically for deterministic, low-latency memory subsystems in industrial automation and networking equipment where refresh-free operation and byte-granular write control are mandatory.
FAQ
What is the maximum operating frequency supported by the IDT71V416VS?
The IDT71V416VS does not use a clock and therefore has no maximum operating frequency specification. Its performance is defined by timing parameters: tRC (read cycle time) is 10 ns, enabling up to 100 MHz effective throughput in continuous asynchronous read operations. Write cycle time (tWC) is also 10 ns, supporting equivalent write bandwidth under proper address and control timing.
Does the IDT71V416VS require a refresh circuit?
No, the IDT71V416VS is a fully static RAM and requires no refresh circuitry. Its CMOS memory cells retain data indefinitely as long as power is applied and all DC operating conditions (VDD = 3.0–3.6 V, temperature within –40°C to +85°C) are met. This eliminates refresh overhead and simplifies system design for real-time deterministic applications.
Can the IDT71V416VS be used with 5V logic interfaces?
No, the IDT71V416VS is strictly a 3.3V device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH is specified as ≥ 2.0 V-not compatible with 5V TTL logic thresholds. Interfacing with 5V systems requires level-shifting circuitry; direct connection risks damage or unreliable operation.
What is the function of Pin 28 on the IDT71V416VS SOJ package?
On the IDT71V416VS in the 44-pin SOJ package, Pin 28 is designated NC (No Connect) but may optionally be connected to VSS per design preference. The datasheet explicitly states "Pin 28 can either be a NC or connected to Vss", allowing flexibility in grounding strategy without affecting functionality or timing.
How does the IDT71V416VS handle partial-word writes?
The IDT71V416VS supports true partial-word writes using dedicated BHE (high-byte enable) and BLE (low-byte enable) pins. When only BHE is asserted (low), only I/O8–I/O15 are written; when only BLE is asserted, only I/O0–I/O7 are written. Both must be low for full 16-bit writes. This avoids read-modify-write cycles and preserves data integrity in multi-threaded or interrupt-driven environments.
IDT71V416VS10PHI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 44-TSOP (0.400", 10.16mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Asynchronous
- Memory Size:
- 4Mbit
- Memory Organization:
- 256K x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- -
- Write Cycle Time - Word, Page:
- 10ns
- Access Time:
- 10 ns
- Voltage - Supply:
- 3V ~ 3.6V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 44-TSOP II
IDT71V416VS10PHI FAQ
1.How can I place an order for IDT71V416VS10PHI through Aetrix?
Please submit a Request for Quotation (RFQ) for IDT71V416VS10PHI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IDT71V416VS10PHI reliable?
The price and inventory of IDT71V416VS10PHI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS10PHI is usually 5 days.
3.What payment methods are accepted for IDT71V416VS10PHI?
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4.How is shipping managed for IDT71V416VS10PHI?
IDT71V416VS10PHI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IDT71V416VS10PHI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IDT71V416VS10PHI?
For technical support, including IDT71V416VS10PHI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS10PHI requirements.
6.How does Aetrix verify that IDT71V416VS10PHI is sourced from the original manufacturer or authorized distributors?
All IDT71V416VS10PHI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS10PHI meets industry standards.
7.What is the process for return or replacement of IDT71V416VS10PHI?
All IDT71V416VS10PHI units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS10PHI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IDT71V416VS10PHI part is unused and in its original packaging.
Return procedure for IDT71V416VS10PHI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
IDT71V416VS10PHI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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Microchip Technology
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93LC46BT-I/OT
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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