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Renesas IDT71V416VS10Y

Part No.:
IDT71V416VS10Y
Manufacturer:
Renesas
Category:
Memory
Package:
44-BSOJ (0.400", 10.16mm Width)
Datasheet:
AetrixIDT71V416VS10Y.pdf
Description:
IC SRAM 4MBIT PARALLEL 44SOJ
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,122

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Product details

Overview

IDT71V416VS from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V single-supply CMOS static RAM with 10 ns access time, JEDEC-compliant center-power/ground pinout, and LVTTL-compatible bidirectional I/Os. It supports byte-wide or full-word read/write operations via independent BHE/BLE controls and operates across commercial temperature range (0°C to +70°C) in a 44-pin SOJ package.

For engineers reviewing the IDT71V416VS datasheet, IDT71V416VS pinout, IDT71V416VS application, or IDT71V416VS equivalent, key selection criteria include its 10 ns read cycle time, low 5 ns OE access, dual-byte enable architecture, and compatibility with legacy 3.3V memory bus designs requiring deterministic asynchronous timing without clocks or refresh.

Technical Context

The IDT71V416VS implements fully static asynchronous circuitry-no clocks, no refresh required-with separate chip select (CS), output enable (OE), write enable (WE), and high/low byte enable (BHE/BLE) inputs enabling flexible memory mapping and partial-word access. Its address decoding covers A0–A17 for 256K word selection, and all I/Os (I/O0–I/O15) are bidirectional and LVTTL-compatible.

Timing is defined by overlapping control signals: read cycles require CS and OE low with WE high; write cycles require CS, WE, and at least one of BHE/BLE low. Output enable latency is guaranteed ≤5 ns, and chip deselect places outputs in high-impedance state within 5 ns (tCHZ), supporting clean bus sharing in multi-device systems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 16-bit (4,194,304-bit total); enables 16-bit data bus interfacing without external width expansion
Access Time (tAA)10 ns max; ensures sub-100 MHz synchronous bus interface compatibility with setup/hold margin
Read Cycle Time (tRC)10 ns max; defines minimum consecutive read interval for burst-free operation
Supply Voltage3.0 V to 3.6 V; single 3.3V rail simplifies power design versus mixed-voltage memory systems
I/O InterfaceLVTTL-compatible; directly interfaces with 3.3V microcontrollers, FPGAs, and ASICs without level shifters
Operating Temperature0°C to +70°C (Commercial grade); validated for office, lab, and non-extended industrial environments
Power Dissipation200 mA dynamic ICC (max), 20 mA full standby ISB1 (max); supports low-duty-cycle embedded buffering

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center-power/ground layout (VDD on pins 12 & 33, VSS on pins 11 & 34) minimizing simultaneous switching noise.

Pin/TerminalCircuit RoleDesign Meaning
A0–A17Address Inputs18-bit address bus selects one of 256K words; A0–A17 fully decoded internally
CSChip SelectActive-low global enable; deassertion forces all outputs to high-Z and reduces ICC to ISB1 level
OEOutput EnableActive-low control for output drivers only; allows read data gating without affecting CS/WE timing
WEWrite EnableActive-low signal initiating write cycle when CS and BHE/BLE are also asserted
BHE / BLEByte EnableIndependent active-low controls for upper (I/O8–I/O15) and lower (I/O0–I/O7) data bytes
I/O0–I/O15Bidirectional DataTrue bidirectional LVTTL I/Os; direction controlled by WE state and internal bus arbitration
VDDPower Supply3.3V supply pin (dual placement per JEDEC standard for reduced IR drop and noise)
VSSGroundGround reference (dual placement for return path integrity and EMI reduction)

Key Features

FeatureDesign Value
JEDEC Center Power/Ground PinoutReduces simultaneous switching noise by symmetrically distributing VDD/VSS around perimeter, critical for stable 10 ns timing
Dual Byte Enable (BHE/BLE)Enables independent 8-bit writes to upper or lower half of 16-bit word-essential for x86 and legacy bus protocols
5 ns OE Access Time (tOE)Minimizes read latency in tightly timed control loops where output enable is dynamically gated
No Clock or Refresh RequiredEliminates timing-critical clock distribution and refresh overhead-ideal for safety-critical or ultra-low-jitter systems
Low-Power Standby ModeFull standby current ≤20 mA (ISB1) enables battery-backed operation in hold mode without SRAM data loss

Applications

Industrial PLC Data BufferingLegacy Embedded Controller Memory

Use Scenario: Real-time I/O scan buffers in programmable logic controllers require deterministic, zero-refresh memory for status registers and command queues.

IC Role / Device Role / Timing Role: IDT71V416VS serves as a 16-bit asynchronous scratchpad with 10 ns access, synchronized to discrete control strobes (CS/OE/WE).

Use Value: Eliminates DRAM refresh circuitry and guarantees consistent read/write latency under variable scan cycle loads.

Use Scenario: Microcontroller-based test equipment uses parallel memory expansion for waveform capture buffers and firmware overlay storage.

IC Role / Device Role / Timing Role: IDT71V416VS acts as a direct-mapped 4 Mbit memory extension, interfaced via 16-bit data bus and 18-bit address lines.

Use Value: LVTTL compatibility and 44-pin SOJ footprint allow drop-in replacement of older 3.3V SRAMs without PCB redesign.

Communications Protocol Stack BufferMedical Imaging Frame Store

Use Scenario: Network packet processors buffer TCP/IP headers and metadata in dedicated SRAM before DMA transfer to main memory.

IC Role / Device Role / Timing Role: IDT71V416VS provides byte-selectable storage for header fields, accessed via BHE/BLE for efficient 8-bit protocol field updates.

Use Value: Independent byte enables reduce bus contention and eliminate unnecessary full-word reads during header parsing.

Use Scenario: Portable ultrasound devices store real-time B-mode scan lines in local memory prior to compression and display rendering.

IC Role / Device Role / Timing Role: IDT71V416VS functions as a low-latency frame line buffer, accepting parallel pixel data at up to 100 MB/s (10 ns × 16-bit).

Use Value: 10 ns access and 5 ns OE response ensure pixel pipeline continuity without FIFO depth penalties.

Equivalent & Alternatives

The following parts are listed as comparable options for similar static RAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Cypress CY62167EV30LL-10ZSXISame 256K × 16 organization, 10 ns speed, but TSOP-II package only; no SOJ optionRequires PCB layout change if replacing SOJ socket; identical timing and voltage specsSelect when TSOP-II footprint is preferred and board space is constrained
ISSI IS61LV25616AL-10TLI10 ns access, 3.3V, SOJ-44 package-but rated for industrial temp (–40°C to +85°C)Valid for extended temperature deployments where IDT71V416VS commercial grade is insufficientSelect for harsh-environment applications needing same pinout and timing with wider thermal margin

Compared with IDT71V416VS, the CY62167EV30LL-10ZSXI offers identical performance in a different package, while the IS61LV25616AL-10TLI extends operating range without altering pinout or timing-making it a direct thermal upgrade path.

Availability

IDT71V416VS is available at Aetrix Electronics and suitable for industrial PLC data buffering, legacy embedded controller memory expansion, and communications protocol stack buffering requiring stable component supply and long-term obsolescence management.

Supply support for IDT71V416VS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and power management ICs before its acquisition by Renesas in 2019.

The IDT71V416VS belongs to IDT's high-speed CMOS SRAM product line, designed specifically for cost-sensitive, low-latency parallel memory applications in networking, industrial control, and test equipment where asynchronous operation and LVTTL compatibility are mandatory.

FAQ

What is the maximum operating frequency supported by the IDT71V416VS?

The IDT71V416VS is an asynchronous SRAM with no clock input, so it does not have an operating frequency specification. Its performance is defined by timing parameters: 10 ns read cycle time (tRC) and 10 ns address access time (tAA). These values support reliable interfacing with 100 MHz bus systems when proper setup/hold margins are maintained. The IDT71V416VS achieves this using fully static CMOS design-no refresh or clock required.

Does the IDT71V416VS support byte-level write operations?

Yes, the IDT71V416VS supports independent byte-level writes via dedicated BHE (high byte enable) and BLE (low byte enable) inputs. When BHE is low and BLE is high, only I/O8–I/O15 (upper byte) are written; when BLE is low and BHE is high, only I/O0–I/O7 (lower byte) are written. Both signals low perform a full 16-bit word write. This capability is confirmed in the truth table and timing waveforms of the IDT71V416VS datasheet.

What is the pin configuration difference between IDT71V416VS and IDT71V416VL?

The IDT71V416VS and IDT71V416VL share identical pinouts and electrical specifications-the only difference is temperature grade: IDT71V416VS is commercial (0°C to +70°C), while IDT71V416VL is industrial (–40°C to +85°C). Both use the same 44-pin SOJ package (SO44-1), same JEDEC pin assignment, and identical AC/DC characteristics at their respective temperature ranges. No PCB or firmware changes are needed when substituting within spec limits.

Can the IDT71V416VS be used with a 5V-only microcontroller system?

No, the IDT71V416VS is strictly a 3.3V device with absolute maximum VDD of +4.6V and VIH threshold of 2.0V min-its I/Os are LVTTL-compatible, not TTL or 5V CMOS. Direct connection to a 5V microcontroller will exceed input voltage ratings and risk damage. Level translation (e.g., TXB0108 or discrete MOSFET translators) is required for safe interfacing, or select a 5V-tolerant SRAM such as the IDT71V016SA.

Is there a lead-free version of the IDT71V416VS available?

Yes, the IDT71V416VS is RoHS-compliant and lead-free, as indicated by the "G" suffix in ordering nomenclature (e.g., IDT71V416VSG). The datasheet revision history and packaging drawings confirm compliance with EU Directive 2011/65/EU. All units supplied by Aetrix Electronics meet current RoHS requirements, with full material declarations available upon request for the IDT71V416VS.

IDT71V416VS10Y Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
44-BSOJ (0.400", 10.16mm Width)
Packaging:
Tube
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Asynchronous
Memory Size:
4Mbit
Memory Organization:
256K x 16
Memory Interface:
Parallel
Clock Frequency:
-
Write Cycle Time - Word, Page:
10ns
Access Time:
10 ns
Voltage - Supply:
3V ~ 3.6V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
44-SOJ

IDT71V416VS10Y FAQ

1.How can I place an order for IDT71V416VS10Y through Aetrix?

Please submit a Request for Quotation (RFQ) for IDT71V416VS10Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IDT71V416VS10Y reliable?

The price and inventory of IDT71V416VS10Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IDT71V416VS10Y is usually 5 days.

3.What payment methods are accepted for IDT71V416VS10Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IDT71V416VS10Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IDT71V416VS10Y?

IDT71V416VS10Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IDT71V416VS10Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IDT71V416VS10Y?

For technical support, including IDT71V416VS10Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IDT71V416VS10Y requirements.

6.How does Aetrix verify that IDT71V416VS10Y is sourced from the original manufacturer or authorized distributors?

All IDT71V416VS10Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IDT71V416VS10Y meets industry standards.

7.What is the process for return or replacement of IDT71V416VS10Y?

All IDT71V416VS10Y units undergo pre-shipment inspection (PSI). If there is an issue with IDT71V416VS10Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IDT71V416VS10Y part is unused and in its original packaging.

Return procedure for IDT71V416VS10Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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