Renesas IDT71V416VS10Y8

Overview

IDT71V416VS10Y8 from Integrated Device Technology is a 256K × 16-bit (4 Mbit), 3.3V single-supply CMOS static RAM with 10 ns access time, JEDEC-compliant center-power/ground pinout, and LVTTL-compatible bidirectional I/Os. It supports byte-wide and word-wide read/write operations via independent BHE/BLE controls and operates across commercial temperature range (0°C to +70°C) in a 44-pin SOJ package.

For engineers reviewing the IDT71V416VS10Y8 datasheet, IDT71V416VS10Y8 pinout, IDT71V416VS10Y8 application, or IDT71V416VS10Y8 equivalent, key selection criteria include its 10 ns read cycle time, low-power standby current (ISB ≤ 70 mA), byte-enable flexibility, 3.3V-only operation, and SOJ-44 mechanical compatibility with legacy memory sockets in industrial control and telecom line cards.

Technical Context

The IDT71V416VS10Y8 implements fully static asynchronous circuitry-no clocks or refresh required-and uses high-reliability CMOS fabrication for stable operation at up to 100 MHz effective bus frequency. Its dual-byte enable (BHE/BLE) and separate chip select (CS) and output enable (OE) allow precise control of data bus loading and timing isolation between memory banks.

Timing is defined by overlapping control signals: CS low enables the device, OE low activates outputs, and WE low initiates writes; all AC parameters-including tAA = 10 ns, tRC = 10 ns, and tOE = 5 ns-are guaranteed over full VDD (3.0–3.6 V) and temperature (0°C to +70°C), with input/output capacitance limited to 7 pF (CIN) and 8 pF (CI/O).

Key Specifications

Pinout & Package

Package: 44-pin, 400-mil plastic SOJ (SO44-1), JEDEC-standard center-power/ground layout minimizing simultaneous switching noise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-speed parallel SRAM applications.

Compared with CY62148EV30LL-10ZSXI and AS6C4008-10TIN, the IDT71V416VS10Y8 offers optimal noise immunity via center-power SOJ layout and native byte-enable hardware-reducing component count and signal integrity risk in space-constrained commercial control systems.

Availability

IDT71V416VS10Y8 is available at Aetrix Electronics and suitable for industrial PLC memory buffers, telecom line card data caches, medical imaging frame buffers, and avionics display controller memory requiring stable component supply and verified 10 ns timing performance.

Supply support for IDT71V416VS10Y8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Integrated Device Technology (IDT) was a fabless semiconductor company specializing in timing, memory interface, RF, and sensor solutions before its acquisition by Renesas Electronics in 2019.

The IDT71V416VS10Y8 belongs to IDT's legacy 3.3V parallel SRAM product line, engineered for high-speed, low-latency data buffering in commercial-grade embedded systems with strict timing predictability requirements.

FAQ

What is the maximum operating frequency supported by the IDT71V416VS10Y8?

The IDT71V416VS10Y8 does not operate on a clock but supports asynchronous bus frequencies up to 100 MHz, derived from its 10 ns read cycle time (tRC). This enables one complete read or write operation every 10 ns, making it compatible with microcontrollers and FPGAs running at 80–100 MHz system clocks when interfaced with appropriate address setup/hold timing.

Does the IDT71V416VS10Y8 require external refresh circuitry?

No, the IDT71V416VS10Y8 uses fully static CMOS memory cells and requires no refresh cycles or clocks. It retains data indefinitely as long as VDD is applied and CS remains active (low); this eliminates refresh overhead and timing uncertainty, distinguishing it from DRAM or pseudo-SRAM devices.

Can the IDT71V416VS10Y8 be used with 5 V logic interfaces?

No, the IDT71V416VS10Y8 is strictly a 3.3 V LVTTL device. Its absolute maximum input voltage is VDD + 0.5 V (≤ 4.1 V), and VIH minimum is 2.0 V-making direct connection to 5 V TTL or CMOS outputs unsafe without level-shifting. Interfacing with 5 V systems requires dedicated voltage translators such as the TXB0108.

What is the function of pin 28 on the IDT71V416VS10Y8 SOJ package?

Pin 28 on the IDT71V416VS10Y8 is marked NC* in the datasheet, meaning "No Connect" - it is internally unconnected and may be left floating or tied to VSS for mechanical stability. The asterisk indicates that connecting it to ground has no electrical effect but is permitted per IDT's packaging guidelines.

How does the byte-enable architecture of the IDT71V416VS10Y8 improve system design?

The IDT71V416VS10Y8's independent BHE and BLE pins allow selective activation of high-byte (I/O8–I/O15) or low-byte (I/O0–I/O7) paths without external gates. This enables efficient 8-bit peripheral interfacing on 16-bit buses, reduces bus turnaround time, and eliminates the need for external byte-lane multiplexers-lowering component count and signal routing complexity in compact designs.